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1. 发明授权

US09287356B2 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same 有权
标题翻译：非挥发性纳米管二极管和非易失性纳米管块及使用其的系统及其制造方法
公开(公告)号：US09287356B2
公开(公告)日：2016-03-15
申请号：US12356447
申请日：2009-01-20
申请人： Claude L. Bertin , Eliodor G. Ghenciu , Thomas Rueckes , H. Montgomery Manning
发明人： Claude L. Bertin , Eliodor G. Ghenciu , Thomas Rueckes , H. Montgomery Manning
IPC分类号： H01L29/06 , B82Y10/00 , G11C11/56 , G11C13/00 , G11C13/02 , H01L27/102 , H01L29/12 , H01L29/16 , H01L51/00 , H01L21/822 , H01L23/525 , H01L27/06 , H01L27/12
CPC分类号： G11C13/0097 , B82Y10/00 , G11C11/56 , G11C13/0007 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C13/025 , G11C2013/009 , G11C2213/19 , G11C2213/35 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L21/8221 , H01L23/5256 , H01L27/0688 , H01L27/1021 , H01L27/115 , H01L27/1203 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L29/1606 , H01L29/861 , H01L51/0048 , H01L2924/00011 , H01L2924/0002 , H01L2924/00 , H01L2224/80001
摘要： A non-volatile nanotube switch and memory arrays constructed from these switches are disclosed. A non-volatile nanotube switch includes a conductive terminal and a nanoscopic element stack having a plurality of nanoscopic elements arranged in direct electrical contact, a first comprising a nanotube fabric and a second comprising a carbon material, a portion of the nanoscopic element stack in electrical contact with the conductive terminal. Control circuitry is provided in electrical communication with and for applying electrical stimulus to the conductive terminal and to at least a portion of the nanoscopic element stack. At least one of the nanoscopic elements is capable of switching among a plurality of electronic states in response to a corresponding electrical stimuli applied by the control circuitry to the conductive terminal and the portion of the nanoscopic element stack. For each electronic state, the nanoscopic element stack provides an electrical pathway of corresponding resistance.
摘要翻译：公开了一种由这些开关构成的非易失性纳米管开关和存储器阵列。非挥发性纳米管开关包括导电端子和纳米级元件堆叠，其具有以直接电接触排列的多个纳米级元件，第一纳米管构件包括纳米管织物，第二纳米管结构包括碳材料，纳米级元件堆叠的一部分在电气与导电端子接触。提供控制电路与导电端子和纳米级元件堆叠的至少一部分电连通并用于向导电端子施加电刺激。纳米级元件中的至少一个能够响应于由控制电路施加到导电端子和纳米级元件堆叠的部分的相应的电刺激而能够在多个电子状态之间切换。对于每个电子状态，纳米级元件堆叠提供相应电阻的电路径。

2. 发明授权

US08771628B2 Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof 有权
标题翻译：水性碳纳米管涂布液及其施用液的制造方法
公开(公告)号：US08771628B2
公开(公告)日：2014-07-08
申请号：US12612445
申请日：2009-11-04
申请人： Ramesh Sivarajan , Thomas Rueckes , Rahul Sen , Brent M. Segal , Eliodor G. Ghenciu , Jonathan W. Ward , Tzong-Ru T. Han
发明人： Ramesh Sivarajan , Thomas Rueckes , Rahul Sen , Brent M. Segal , Eliodor G. Ghenciu , Jonathan W. Ward , Tzong-Ru T. Han
IPC分类号： D01F9/12
CPC分类号： D06M11/64 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/168 , C01B32/17 , C01B2202/02 , C01B2202/28 , D06M10/02 , D06M11/50 , D06M11/55 , D06M2101/40 , H01L51/0003 , H01L51/0048 , Y10S977/746 , Y10S977/845
摘要： Certain applicator liquids and method of making the applicator liquids are described. The applicator liquids can be used to form nanotube films or fabrics of controlled properties. An applicator liquid for preparation of a nanotube film or fabric includes a controlled concentration of nanotubes dispersed in a liquid medium containing water. The controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity.
摘要翻译：描述了一些施用液体和制备涂抹液的方法。施用液体可用于形成具有受控特性的纳米管膜或织物。用于制备纳米管膜或织物的涂布液包括分散在含水液体介质中的受控浓度的纳米管。受控浓度足以形成预选密度和均匀性的纳米管织物或薄膜。

3. 发明授权

US08513768B2 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same 有权
标题翻译：非挥发性纳米管二极管和非易失性纳米管块及使用其的系统及其制造方法
公开(公告)号：US08513768B2
公开(公告)日：2013-08-20
申请号：US11835651
申请日：2007-08-08
申请人： Claude L. Bertin , Thomas Rueckes , X. M. Henry Huang , Ramesh Sivarajan , Eliodor G. Ghenciu , Steven L. Konsek , Mitchell Meinhold , Jonathan W. Ward , Darren K. Brock
发明人： Claude L. Bertin , Thomas Rueckes , X. M. Henry Huang , Ramesh Sivarajan , Eliodor G. Ghenciu , Steven L. Konsek , Mitchell Meinhold , Jonathan W. Ward , Darren K. Brock
IPC分类号： H01L23/52
CPC分类号： H01L27/1021 , B82Y10/00 , G11C13/025 , G11C2213/19 , H01L21/8221 , H01L23/5256 , H01L27/0688 , H01L27/1203 , H01L2924/0002 , H01L2924/00
摘要： Under one aspect, a non-volatile nanotube diode device includes first and second terminals; a semiconductor element including a cathode and an anode, and capable of forming a conductive pathway between the cathode and anode in response to electrical stimulus applied to the first conductive terminal; and a nanotube switching element including a nanotube fabric article in electrical communication with the semiconductive element, the nanotube fabric article disposed between and capable of forming a conductive pathway between the semiconductor element and the second terminal, wherein electrical stimuli on the first and second terminals causes a plurality of logic states.
摘要翻译：在一个方面，非挥发性纳米管二极管器件包括第一和第二端子; 包括阴极和阳极的半导体元件，并且能够响应于施加到第一导电端子的电刺激而在阴极和阳极之间形成导电路径; 以及纳米管开关元件，其包括与所述半导体元件电连通的纳米管织物制品，所述纳米管织物制品设置在所述半导体元件和所述第二端子之间，并且能够形成所述第一和第二端子之间的电刺激，多个逻辑状态。

4. 发明授权

US08183665B2 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same 有权
标题翻译：非挥发性纳米管二极管和非易失性纳米管块及使用其的系统及其制造方法
公开(公告)号：US08183665B2
公开(公告)日：2012-05-22
申请号：US12273807
申请日：2008-11-19
申请人： Claude L. Bertin , Eliodor G. Ghenciu , Thomas Rueckes , H. Montgomery Manning
发明人： Claude L. Bertin , Eliodor G. Ghenciu , Thomas Rueckes , H. Montgomery Manning
IPC分类号： G11C11/56 , H01L23/52
CPC分类号： G11C13/025 , B82Y10/00 , G11C13/003 , G11C2213/19 , G11C2213/71 , G11C2213/72 , G11C2213/78 , H01L21/8221 , H01L23/5256 , H01L27/0688 , H01L27/1021 , H01L27/1203 , H01L29/1606 , H01L2924/00011 , H01L2924/0002 , Y10S977/943 , H01L2924/00 , H01L2224/80001
摘要： A high-density memory array. A plurality of word lines and a plurality of bit lines are arranged to access a plurality of memory cells. Each memory cell includes a first conductive terminal and an article in physical and electrical contact with the first conductive terminal, the article comprising a plurality of nanoscopic particles. A second conductive terminal is in physical and electrical contact with the article. Select circuitry is arranged in electrical communication with a bit line of the plurality of bit lines and one of the first and second conductive terminals. The article has a physical dimension that defines a spacing between the first and second conductive terminals such that the nanotube article is interposed between the first and second conducive terminals. A logical state of each memory cell is selectable by activation only of the bit line and the word line connected to that memory cell.
摘要翻译：高密度存储阵列。多个字线和多个位线被布置为访问多个存储单元。每个存储单元包括第一导电端子和与第一导电端子物理和电接触的制品，所述制品包括多个纳米级颗粒。第二导电端子与物品物理和电接触。选择电路布置成与多个位线的位线和第一和第二导电端子之一电连通。该制品具有限定第一和第二导电端子之间的间隔的物理尺寸，使得纳米管制品插入在第一和第二导电端子之间。每个存储器单元的逻辑状态仅通过仅连接到该存储器单元的位线和字线的激活来选择。

5. 发明授权

US07666382B2 Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof 有权
标题翻译：水性碳纳米管涂布液及其施用液的制造方法
公开(公告)号：US07666382B2
公开(公告)日：2010-02-23
申请号：US11304315
申请日：2005-12-15
申请人： Eliodor G. Ghenciu , Tzong-Ru Terry Han , Ramesh Sivarajan , Thomas Rueckes , Rahul Sen , Brent M. Segal , Jonathan W. Ward
发明人： Eliodor G. Ghenciu , Tzong-Ru Terry Han , Ramesh Sivarajan , Thomas Rueckes , Rahul Sen , Brent M. Segal , Jonathan W. Ward
IPC分类号： D01F9/12
CPC分类号： D06M11/64 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/168 , C01B32/17 , C01B2202/02 , C01B2202/28 , D06M10/02 , D06M11/50 , D06M11/55 , D06M2101/40 , H01L51/0003 , H01L51/0048 , Y10S977/746 , Y10S977/845
摘要： Certain applicator liquids and method of making the applicator liquids are described. The applicator liquids can be used to form nanotube films or fabrics of controlled properties. An applicator liquid for preparation of a nanotube film or fabric includes a controlled concentration of nanotubes dispersed in a liquid medium containing water. The controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity.
摘要翻译：描述了一些施用液体和制备涂抹液的方法。施用液体可用于形成具有受控特性的纳米管膜或织物。用于制备纳米管膜或织物的涂布液包括分散在含水液体介质中的受控浓度的纳米管。受控浓度足以形成预选密度和均匀性的纳米管织物或薄膜。

6. 发明申请

US20080160734A1 NONVOLATILE NANOTUBE DIODES AND NONVOLATILE NANOTUBE BLOCKS AND SYSTEMS USING SAME AND METHODS OF MAKING SAME 有权
标题翻译：非挥发性纳米管二极体和非挥发性纳米管块和使用其的系统及其制备方法
公开(公告)号：US20080160734A1
公开(公告)日：2008-07-03
申请号：US11835852
申请日：2007-08-08
申请人： Claude L. BERTIN , Thomas RUECKES , X. M. H. HUANG , Ramesh SIVARAJAN , Eliodor G. GHENCIU , Steven L. KONSEK , Mitchell MEINHOLD
发明人： Claude L. BERTIN , Thomas RUECKES , X. M. H. HUANG , Ramesh SIVARAJAN , Eliodor G. GHENCIU , Steven L. KONSEK , Mitchell MEINHOLD
IPC分类号： H01L21/329
CPC分类号： H01L27/1021 , B82Y10/00 , G11C13/025 , G11C2213/19 , G11C2213/71 , G11C2213/72 , H01L21/8221 , H01L27/0688 , H01L27/1203
摘要： Under one aspect, a method of making a nanotube switch includes: providing a substrate having a first conductive terminal; depositing a multilayer nanotube fabric over the first conductive terminal; and depositing a second conductive terminal over the multilayer nanotube fabric, the nanotube fabric having a thickness, density, and composition selected to prevent direct physical and electrical contact between the first and second conductive terminals. In some embodiments, the first and second conductive terminals and the multilayer nanotube fabric are lithographically patterned so as to each have substantially the same lateral dimensions, e.g., to each have a substantially circular or rectangular lateral shape. In some embodiments, the multilayer nanotube fabric has a thickness from 10 nm to 200 nm, e.g., 10 nm to 50 nm. The structure may include an addressable diode provided under the first conductive terminal or deposited over the second terminal.
摘要翻译：一方面，制造纳米管开关的方法包括：提供具有第一导电端子的基板; 在所述第一导电端子上沉积多层纳米管织物; 以及在所述多层纳米管织物上沉积第二导电端子，所述纳米管织物具有选择为防止所述第一和第二导电端子之间的直接物理和电接触的厚度，密度和组成。在一些实施例中，第一和第二导电端子和多层纳米管织物被光刻图案化，以便每个具有基本上相同的横向尺寸，例如每个具有基本上圆形或矩形的横向形状。在一些实施例中，多层纳米管织物的厚度为10nm至200nm，例如10nm至50nm。该结构可以包括设置在第一导电端子下方或沉积在第二端子上的可寻址二极管。

7. 发明授权

US07011716B2 Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products 失效
公开(公告)号：US07011716B2
公开(公告)日：2006-03-14
申请号：US10249658
申请日：2003-04-29
申请人： Chongying Xu , Michael Korzenski , Thomas H. Baum , Alexander Borovik , Eliodor G. Ghenciu
发明人： Chongying Xu , Michael Korzenski , Thomas H. Baum , Alexander Borovik , Eliodor G. Ghenciu
IPC分类号： B08B3/08 , H01L21/302 , B23G1/34
CPC分类号： H01L21/02101
摘要： Drying of patterned wafers is achieved in a manner effecting removal of water from the patterned wafers without collapse or deterioration of the pattern structures thereof. The drying is carried out in one aspect of the invention with a composition containing supercritical fluid, and at least one water-reactive agent that chemically reacts with water to form reaction product(s) more soluble in the supercritical fluid than water. Various methodologies are described for use of supercritical fluids to dry patterned wafers, which avoid the (low water solubility) deficiency of supercritical fluids such as supercritical CO2.

8. 发明授权

US06735978B1 Treatment of supercritical fluid utilized in semiconductor manufacturing applications 失效
标题翻译：半导体制造应用中超临界流体的处理
公开(公告)号：US06735978B1
公开(公告)日：2004-05-18
申请号：US10364558
申请日：2003-02-11
申请人： Glenn M. Tom , Michael B. Korzenski , Eliodor G. Ghenciu , Chongying Xu , Thomas H. Baum
发明人： Glenn M. Tom , Michael B. Korzenski , Eliodor G. Ghenciu , Chongying Xu , Thomas H. Baum
IPC分类号： F25D100
CPC分类号： C01B32/50 , Y02P20/544
摘要： A system and process for utilization and disposition of a supercritical fluid composition, in which a supercritical fluid (SCF) composition is used in an SCF-using process facility such as a semiconductor manufacturing plant. The supercritical fluid composition is withdrawn from the process facility containing at least one component that is extraneous with respect to the further disposition of the supercritical fluid composition. The withdrawn supercritical fluid composition is converted to a pressurized liquid, which is treated to at least partially remove the extraneous component(s) therefrom. The extraneous component(s)-depleted pressurized liquid in its further disposition can be reconverted to a supercritical state for recycle to the SCF-using process facility, or it can be gasified and discharged to the atmosphere in the case of supercritical fluids such as CO2.
摘要翻译：一种用于利用和处置超临界流体组合物的系统和方法，其中超临界流体（SCF）组合物在诸如半导体制造厂的SCF使用过程设备中使用。超临界流体组合物从处理设备中取出，其中含有至少一种相对于超临界流体组合物的进一步处置是无关的组分。将取出的超临界流体组合物转化为加压液体，其被处理以至少部分地从其中除去外来成分。在其进一步的处置中，去除加压液体的外来成分可以再转化为超临界状态，以再循环至使用SCF的工艺设备，或者在超临界流体如CO2的情况下，可将其气化并排放到大气中。

9. 发明授权

US08013363B2 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same 有权
标题翻译：非挥发性纳米管二极管和非易失性纳米管块及使用其的系统及其制造方法
公开(公告)号：US08013363B2
公开(公告)日：2011-09-06
申请号：US11835759
申请日：2007-08-08
申请人： Claude L. Bertin , Thomas Rueckes , X. M. Henry Huang , Ramesh Sivarajan , Eliodor G. Ghenciu , Steven L. Konsek , Mitchell Meinhold , Jonathan W. Ward , Darren K. Brock
发明人： Claude L. Bertin , Thomas Rueckes , X. M. Henry Huang , Ramesh Sivarajan , Eliodor G. Ghenciu , Steven L. Konsek , Mitchell Meinhold , Jonathan W. Ward , Darren K. Brock
IPC分类号： H01L27/10
CPC分类号： H01L27/1021 , B82Y10/00 , G11C13/025 , G11C2213/19 , H01L21/8221 , H01L23/5256 , H01L27/0688 , H01L27/1203 , H01L2924/0002 , H01L2924/00
摘要： Under one aspect, a nonvolatile nanotube diode includes: a substrate; a semiconductor element disposed over the substrate, the semiconductor element having an anode and a cathode and capable of forming an electrically conductive pathway between the anode and the cathode; a nanotube switching element disposed over the semiconductor element, the nanotube switching element including a conductive contact and a nanotube fabric element capable of a plurality of resistance states; and a conductive terminal disposed in spaced relation to the conductive contact, wherein the nanotube fabric element is interposed between and in electrical communication with the conductive contact and the conductive contact is in electrical communication with the cathode, and wherein in response to electrical stimuli applied to the anode and the conductive terminal, the nonvolatile nanotube diode is capable of forming an electrically conductive pathway between the anode and the conductive terminal.
摘要翻译：在一个方面，非易失性纳米管二极管包括：基板; 设置在所述衬底上的半导体元件，所述半导体元件具有阳极和阴极，并且能够在所述阳极和所述阴极之间形成导电通路; 设置在所述半导体元件上的纳米管开关元件，所述纳米管开关元件包括导电接触件和能够具有多个电阻状态的纳米管织物元件; 以及导电端子，其以导电接触件的间隔设置，其中所述纳米管织物元件置于所述导电接触件之间并与所述导电接触件电连通，并且所述导电接触件与所述阴极电连通，并且其中响应于施加到阳极和导电端子，非易失性纳米管二极管能够在阳极和导电端子之间形成导电通路。

10. 发明授权

US07782650B2 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same 有权
标题翻译：非挥发性纳米管二极管和非易失性纳米管块及使用其的系统及其制造方法
公开(公告)号：US07782650B2
公开(公告)日：2010-08-24
申请号：US11835845
申请日：2007-08-08
申请人： Claude L. Bertin , Thomas Rueckes , X. M. Henry Huang , Ramesh Sivarajan , Eliodor G. Ghenciu , Steven L. Konsek , Mitchell Meinhold , Jonathan W. Ward , Darren K. Brock
发明人： Claude L. Bertin , Thomas Rueckes , X. M. Henry Huang , Ramesh Sivarajan , Eliodor G. Ghenciu , Steven L. Konsek , Mitchell Meinhold , Jonathan W. Ward , Darren K. Brock
IPC分类号： G11C11/00
CPC分类号： H01L27/1021 , G11C2213/19 , H01L21/8221 , H01L27/0688 , H01L27/1203 , Y10S977/943
摘要： Under one aspect, a memory array includes word lines; bit lines; memory cells; and a memory operation circuit. Each memory cell responds to electrical stimulus on a word line and on a bit line and includes: a two-terminal non-volatile nanotube switching device having first and second terminals, a semiconductor diode element, and a nanotube fabric article capable of multiple resistance states. The semiconductor diode and nanotube article are between and in electrical communication with the first and second terminals, which are coupled to the word line bit line respectively. The operation circuit selects cells by activating bit and/or word lines, detects a resistance state of the nanotube fabric article of a selected memory cell, and adjusts electrical stimulus applied to the cell to controllably induce a selected resistance state in the nanotube fabric article. The selected resistance state corresponds to an informational state of the memory cell.
摘要翻译：在一个方面，存储器阵列包括字线; 位线记忆细胞; 和存储器操作电路。每个存储器单元响应于字线和位线上的电刺激，并且包括：具有第一和第二端子的二端非易失性纳米管开关器件，半导体二极管元件和能够具有多个电阻状态的纳米管织物制品。半导体二极管和纳米管制品分别与第一和第二端子电连接，并且与第一和第二端子电连接，它们分别耦合到字线位线。操作电路通过激活位和/或字线来选择单元，检测所选择的存储单元的纳米管织物的电阻状态，并调整施加到单元的电刺激以可控制地引起纳米管织物制品中选定的电阻状态。选择的电阻状态对应于存储单元的信息状态。

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