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1. 发明授权

US08945305B2 Methods of selectively forming a material using parylene coating 有权
标题翻译：使用聚对二甲苯涂层选择性地形成材料的方法
公开(公告)号：US08945305B2
公开(公告)日：2015-02-03
申请号：US12872608
申请日：2010-08-31
申请人： Eugene P. Marsh
发明人： Eugene P. Marsh
IPC分类号： C30B25/04 , H01L21/02 , C23C16/02 , C23C16/04 , C23C16/455 , H01L21/285 , H01L21/768
CPC分类号： H01L21/02118 , C23C16/0227 , C23C16/042 , C23C16/045 , C23C16/45534 , H01L21/02175 , H01L21/02181 , H01L21/02186 , H01L21/02192 , H01L21/02194 , H01L21/0228 , H01L21/02304 , H01L21/28562 , H01L21/32051 , H01L21/76879
摘要： Methods for depositing a material, such as a metal or a transition metal oxide, using an ALD (atomic layer deposition) process and resulting structures are disclosed. Such methods include treating a surface of a semiconductor structure periodically throughout the ALD process to regenerate a blocking material or to coat a blocking material that enables selective deposition of the material on a surface of a substrate. The surface treatment may reactivate a surface of the substrate toward the blocking material, may restore the blocking material after degradation occurs during the ALD process, and/or may coat the blocking material to prevent further degradation during the ALD process. For example, the surface treatment may be applied after performing one or more ALD cycles. Accordingly, the presently disclosed methods enable in situ restoration of blocking materials in ALD process that are generally incompatible with the blocking material and also enables selective deposition in recessed structures.
摘要翻译：公开了使用ALD（原子层沉积）工艺和所得结构沉积诸如金属或过渡金属氧化物的材料的方法。这样的方法包括在整个ALD过程中周期性地处理半导体结构的表面以再生阻挡材料或涂覆能够选择性地将材料沉积在衬底的表面上的阻挡材料。表面处理可以使基材的表面朝向阻挡材料再活化，可以在ALD工艺期间退化后恢复阻挡材料，和/或可以涂覆阻挡材料以防止在ALD工艺期间的进一步降解。例如，可以在执行一个或多个ALD循环之后施加表面处理。因此，目前公开的方法使得能够在ALD工艺中原位恢复通常与阻挡材料不相容的阻挡材料，并且还使得能够在凹陷结构中进行选择性沉积。

2. 发明授权

US08840990B2 Porous organosilicate layers, and vapor deposition systems and methods for preparing same 有权
标题翻译：多孔有机硅酸盐层，气相沉积系统及其制备方法
公开(公告)号：US08840990B2
公开(公告)日：2014-09-23
申请号：US13104130
申请日：2011-05-10
申请人： Eugene P. Marsh
发明人： Eugene P. Marsh
IPC分类号： B32B3/26 , C23C16/00 , H01L21/02 , H01L21/316 , C23C18/12
CPC分类号： C23C16/448 , B05D1/60 , C23C18/1212 , C23C18/1254 , C23C18/1275 , C23C18/1283 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/0228 , H01L21/31695 , Y10T428/249953 , Y10T428/249978 , Y10T428/249979
摘要： The present invention provides porous organosilicate layers, and vapor deposition systems and methods for preparing such layers on substrates. The porous organosilicate layers are useful, for example, as masks.
摘要翻译：本发明提供了多孔有机硅酸盐层，以及气相沉积系统和在基底上制备这些层的方法。多孔有机硅酸盐层可用作例如掩模。

3. 发明申请

US20130292626A1 RESISTIVE MEMORY HAVING CONFINED FILAMENT FORMATION 有权
公开(公告)号：US20130292626A1
公开(公告)日：2013-11-07
申请号：US13465166
申请日：2012-05-07
申请人： Eugene P. Marsh , Jun Liu
发明人： Eugene P. Marsh , Jun Liu
IPC分类号： H01L45/00 , H01L21/8239
CPC分类号： H01L45/085 , H01L45/08 , H01L45/1233 , H01L45/124 , H01L45/1246 , H01L45/1253 , H01L45/1266 , H01L45/14 , H01L45/143 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1683
摘要： Resistive memory having confined filament formation is described herein. One or more method embodiments include forming an opening in a stack having a silicon material and an oxide material on the silicon material, and forming an oxide material in the opening adjacent the silicon material, wherein the oxide material formed in the opening confines filament formation in the resistive memory cell to an area enclosed by the oxide material formed in the opening.

4. 发明授权

US08551808B2 Methods of patterning a substrate including multilayer antireflection coatings 有权
标题翻译：图案化包括多层抗反射涂层的基板的方法
公开(公告)号：US08551808B2
公开(公告)日：2013-10-08
申请号：US13613358
申请日：2012-09-13
申请人： Eugene P. Marsh , Dan B. Millward
发明人： Eugene P. Marsh , Dan B. Millward
IPC分类号： H01L51/40
CPC分类号： B32B25/00 , B81C1/00206 , B81C2201/0149 , B82Y30/00 , G02B1/111 , G03F7/0002 , G03F7/091 , H01L21/0276 , H01L27/1462 , H01L31/02162 , H01L31/02168 , Y02E10/50 , Y10T428/24174
摘要： Multi-layer antireflection coatings, devices including multi-layer antireflection coatings and methods of forming the same are disclosed. A block copolymer is applied to a substrate and self-assembled into parallel lamellae above a substrate. The block copolymer may optionally be allowed to self-assemble into a multitude of domains oriented either substantially parallel or substantially perpendicular to an underlying substrate.
摘要翻译：公开了多层抗反射涂层，包括多层抗反射涂层的装置及其形成方法。将嵌段共聚物施加到基底上并自组装成衬底上方的平行薄片。嵌段共聚物可以任选地被允许自组装成大致平行或基本上垂直于下面的衬底取向的多个畴。

5. 发明授权

US08461682B2 Ruthenium silicide diffusion barrier layers and methods of forming same 有权
标题翻译：硅化钌扩散阻挡层及其形成方法
公开(公告)号：US08461682B2
公开(公告)日：2013-06-11
申请号：US12501955
申请日：2009-07-13
申请人： Brian A. Vaartstra , Eugene P. Marsh
发明人： Brian A. Vaartstra , Eugene P. Marsh
IPC分类号： H01L29/94
CPC分类号： H01L21/76855 , H01L21/28518 , H01L21/28556 , H01L21/76843 , H01L28/75
摘要： A method for use in the fabrication of integrated circuits includes providing a substrate assembly having a surface. A diffusion barrier layer is formed over at least a portion of the surface. The diffusion barrier layer is formed of RuSix, where x is in the range of about 0.01 to about 10. The barrier layer may be formed by depositing RuSix by chemical vapor deposition or the barrier layer may be formed by forming a layer of ruthenium relative to a silicon containing region and performing an anneal to form RuSix from the layer of ruthenium and the silicon containing region. Capacitor electrodes, interconnects or other structures may be formed with such a diffusion barrier layer.
摘要翻译：一种用于制造集成电路的方法包括提供具有表面的基片组件。在表面的至少一部分上形成扩散阻挡层。扩散阻挡层由RuSix形成，其中x在约0.01至约10的范围内。阻挡层可以通过化学气相沉积沉积RuSix而形成，或者阻挡层可以通过形成相对于含硅区域并进行退火以从钌层和含硅区域形成RuSix。可以用这种扩散阻挡层形成电容器电极，互连或其它结构。

6. 发明授权

US08409449B2 Registered structure formation via the application of directed thermal energy to diblock copolymer films 有权
标题翻译：通过将定向热能应用于二嵌段共聚物膜而形成注册结构
公开(公告)号：US08409449B2
公开(公告)日：2013-04-02
申请号：US13337567
申请日：2011-12-27
申请人： Dan B. Millward , Eugene P. Marsh
发明人： Dan B. Millward , Eugene P. Marsh
IPC分类号： B44C1/22 , H01L21/302 , B82B3/00
CPC分类号： B81B1/00 , B81C1/00015 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C08L53/00 , G03F7/0002 , Y10S438/947 , Y10S977/888 , Y10S977/895 , Y10S977/90 , C08L2666/02
摘要： Methods for fabricating sub-lithographic, nanoscale linear microchannel arrays over surfaces without defined features utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the methods use a multi-layer induced ordering approach to align lamellar films to an underlying base film within trenches, and localized heating to anneal the lamellar-phase block copolymer film overlying the trenches and outwardly over the remaining surface.
摘要翻译：提供了利用自组装嵌段共聚物在表面上制备亚光刻纳米线性微通道阵列而不具有限定特征的方法，以及由这些方法形成的膜和器件。该方法的实施方案使用多层诱导排序方法将层状膜与沟槽内的底层膜对准，并进行局部加热以使覆盖在沟槽上的层状相嵌段共聚物膜退出，并在剩余表面上向外退火。

7. 发明授权

US08367460B2 Horizontally oriented and vertically stacked memory cells 有权
公开(公告)号：US08367460B2
公开(公告)日：2013-02-05
申请号：US12820923
申请日：2010-06-22
申请人： Timothy A. Quick , Eugene P. Marsh
发明人： Timothy A. Quick , Eugene P. Marsh
IPC分类号： H01L29/02
CPC分类号： H01L27/2481 , H01L27/2463 , H01L27/249 , H01L45/04 , H01L45/06 , H01L45/122 , H01L45/1226 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/1625 , H01L45/1675
摘要： Horizontally oriented and vertically stacked memory cells are described herein. One or more method embodiments include forming a vertical stack having a first insulator material, a first memory cell material on the first insulator material, a second insulator material on the first memory cell material, a second memory cell material on the second insulator material, and a third insulator material on the second memory cell material, forming an electrode adjacent a first side of the first memory cell material and a first side of the second memory cell material, and forming an electrode adjacent a second side of the first memory cell material and a second side of the second memory cell material.

8. 发明申请

US20120261647A1 METHODS OF FORMING STRUCTURES HAVING NANOTUBES EXTENDING BETWEEN OPPOSING ELECTRODES AND STRUCTURES INCLUDING SAME 有权
标题翻译：形成具有对称电极的纳米结构的结构的方法和包括其的结构
公开(公告)号：US20120261647A1
公开(公告)日：2012-10-18
申请号：US13528342
申请日：2012-06-20
申请人： Eugene P. Marsh , Gurtej S. Sandhu
发明人： Eugene P. Marsh , Gurtej S. Sandhu
IPC分类号： H01L21/20 , H01L29/775 , B82Y40/00 , B82Y99/00
CPC分类号： H01L51/0558 , B82Y10/00 , G11C13/025 , H01L21/02527 , H01L21/02606 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L29/0665 , H01L29/0673 , H01L29/1606 , H01L29/7781 , H01L29/78 , H01L51/0003 , H01L51/0048 , H01L51/0562
摘要： A semiconductor structure including nanotubes forming an electrical connection between electrodes is disclosed. The semiconductor structure may include an open volume defined by a lower surface of an electrically insulative material and sidewalls of at least a portion of each of a dielectric material and opposing electrodes. The nanotubes may extend between the opposing electrodes, forming a physical and electrical connection therebetween. The nanotubes may be encapsulated within the open volume in the semiconductor structure. A semiconductor structure including nanotubes forming an electrical connection between source and drain regions is also disclosed. The semiconductor structure may include at least one semiconducting carbon nanotube electrically connected to a source and a drain, a dielectric material disposed over the at least one semiconducting carbon nanotube and a gate dielectric overlying a portion of the dielectric material. Methods of forming the semiconductor structures are also disclosed.
摘要翻译：公开了一种包括在电极之间形成电连接的纳米管的半导体结构。半导体结构可以包括由电绝缘材料的下表面限定的开放体积和电介质材料和相对电极中的每一个的至少一部分的侧壁。纳米管可以在相对的电极之间延伸，在它们之间形成物理和电连接。纳米管可以封装在半导体结构中的开放体积内。还公开了包括在源区和漏区之间形成电连接的纳米管的半导体结构。半导体结构可以包括电连接到源极和漏极的至少一个半导体碳纳米管，设置在至少一个半导体碳纳米管上方的电介质材料和覆盖该介电材料的一部分的栅极电介质。还公开了形成半导体结构的方法。

9. 发明申请

US20120231579A1 Methods Of Depositing Antimony-Comprising Phase Change Material Onto A Substrate And Methods Of Forming Phase Change Memory Circuitry 有权
标题翻译：将含锑相变材料沉积到基板上的方法和形成相变存储器电路的方法
公开(公告)号：US20120231579A1
公开(公告)日：2012-09-13
申请号：US13478460
申请日：2012-05-23
申请人： Timothy A. Quick , Eugene P. Marsh
发明人： Timothy A. Quick , Eugene P. Marsh
IPC分类号： H01L21/06
CPC分类号： H01L45/1616 , C23C14/30 , C23C16/305 , H01L45/06 , H01L45/144 , H01L45/148
摘要： A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized Sb(OR)3 to a substrate, where R is alkyl, and forming there-from antimony-comprising phase change material on the substrate. The phase change material has no greater than 10 atomic percent oxygen, and includes another metal in addition to antimony.
摘要翻译：将包含锑的相变材料沉积到衬底上的方法包括向衬底提供还原剂和蒸发的Sb（OR）3，其中R是烷基，并且在衬底上形成来自含锑相变材料的衬底。相变材料的氧含量不大于10原子％，除了锑之外，还包含另外的金属。

10. 发明授权

US08236899B2 Zwitterionic block copolymers and methods 有权
标题翻译：两性离子嵌段共聚物和方法
公开(公告)号：US08236899B2
公开(公告)日：2012-08-07
申请号：US13206237
申请日：2011-08-09
申请人： Dan Millward , Eugene P. Marsh
发明人： Dan Millward , Eugene P. Marsh
IPC分类号： C08F293/00 , G03F7/00 , H01L21/28
CPC分类号： H01L51/0043 , C08F293/005 , H01L51/0026 , H01L51/0028 , H01L51/004 , H01L51/0575
摘要： Zwitterionic block copolymers having oppositely charged or chargeable terminal groups, and methods of making and using the same, are disclosed. The zwitterionic block copolymers can undergo microphase separation.
摘要翻译：公开了具有相反电荷或带电荷的端基的两性离子嵌段共聚物及其制备和使用方法。两性离子嵌段共聚物可以进行微相分离。

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