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1. 发明申请

US20180200786A1 NANOPARTICLE STRUCTURE AND PROCESS FOR MANUFACTURE 审中-公开
公开(公告)号：US20180200786A1
公开(公告)日：2018-07-19
申请号：US15801987
申请日：2017-11-02
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Qing Cao , Kangguo Cheng , Juntao Li
IPC分类号： B22F1/00
CPC分类号： B82Y40/00 , B82Y10/00 , B82Y15/00 , B82Y20/00 , C09K11/66 , H01L29/0665 , H01L29/66227 , H01L29/66439 , H01L29/66977 , Y10S977/773 , Y10S977/888 , Y10S977/92 , Y10S977/932
摘要： A method for forming nanoparticles includes forming a stack of alternating layers including a first material disposed between a second material. The stack of alternating layers is patterned to form pillars. A dielectric layer is conformally deposited over the pillars. The pillars are annealed in an oxygen environment to modify a shape of the first material of the alternating layers. The dielectric layer and the second material are etched selectively to the first material to form nanoparticles from the first material.

2. 发明授权

US09929238B2 Graphene-containing device having graphene nanopatterns separated by narrow dead zone distance 有权
公开(公告)号：US09929238B2
公开(公告)日：2018-03-27
申请号：US15494035
申请日：2017-04-21
申请人： Samsung Electronics Co., Ltd.
发明人： Seongjun Jeong , Seongjun Park , Yunseong Lee
IPC分类号： H01L29/16 , H01L29/06 , H01L29/786 , H01L27/088 , H01L21/8234 , H01L21/02 , H01L21/04
CPC分类号： H01L29/1606 , B82Y10/00 , B82Y40/00 , H01L21/02527 , H01L21/02603 , H01L21/042 , H01L21/3065 , H01L21/3081 , H01L21/3085 , H01L21/3086 , H01L21/3088 , H01L21/467 , H01L21/823412 , H01L27/088 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/66037 , H01L29/66045 , H01L29/775 , H01L29/778 , H01L29/78696 , H01L51/0045 , Y10S977/755 , Y10S977/888
摘要： Methods of forming a graphene nanopattern, graphene-containing devices, and methods of manufacturing the graphene-containing devices are provided. A method of forming the graphene nanopattern may include forming a graphene layer on a substrate, forming a block copolymer layer on the graphene layer and a region of the substrate exposed on at least one side of the graphene layer, forming a mask pattern from the block copolymer layer by removing one of a plurality of first region and a plurality of second regions of the block copolymer, and patterning the graphene layer in a nanoscale by using the mask pattern as an etching mask. The block copolymer layer may be formed to directly contact the graphene layer. The block copolymer layer may be formed to directly contact a region of the substrate structure that is exposed on at least one side of the graphene layer.

3. 发明授权

US09840773B2 Method for making nanowire structure 有权
公开(公告)号：US09840773B2
公开(公告)日：2017-12-12
申请号：US14277214
申请日：2014-05-14
申请人： Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
发明人： Jia-Ping Wang , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： C23C14/58 , C23C14/14 , C23C14/20 , C01G23/047 , C04B35/622 , C01G23/07 , C01F7/42 , C01G53/04 , B82Y30/00 , C04B35/628 , B82Y40/00
CPC分类号： C23C14/5813 , B82Y30/00 , B82Y40/00 , C01F7/42 , C01G23/047 , C01G23/07 , C01G53/04 , C01P2004/16 , C01P2004/64 , C04B35/62259 , C04B35/62876 , C04B35/62884 , C04B35/62897 , C04B2235/526 , C04B2235/5264 , C04B2235/5288 , C23C14/14 , C23C14/20 , Y10S977/762 , Y10S977/811 , Y10S977/888 , Y10S977/89 , Y10S977/896 , Y10S977/901
摘要： The disclosure related to a method for making a nanowire structure. First, a free-standing carbon nanotube structure is suspended. Second, a metal layer is coated on a surface of the carbon nanotube structure. The metal layer is oxidized to grow metal oxide nanowires.

4. 发明申请

US20170345830A1 LOW POWER EMBEDDED ONE-TIME PROGRAMMABLE (OTP) STRUCTURES 审中-公开
公开(公告)号：US20170345830A1
公开(公告)日：2017-11-30
申请号：US15674558
申请日：2017-08-11
申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.
发明人： Ping ZHENG , Eng Huat TOH , Kiok Boone Elgin QUEK , Yuan SUN
IPC分类号： H01L27/112 , H01L29/06 , H01L29/786 , H01L29/66 , H01L29/423 , B82Y40/00 , B82Y10/00
CPC分类号： H01L27/11206 , B82Y10/00 , B82Y40/00 , H01L23/5252 , H01L29/0673 , H01L29/42392 , H01L29/66439 , H01L29/66545 , H01L29/775 , H01L29/7851 , H01L29/7853 , Y10S977/765 , Y10S977/888 , Y10S977/943
摘要： Devices and methods for forming a device are presented. The method includes providing a substrate prepared with at least a first region for accommodating an anti-fuse based memory cell. A fin structure is formed in the first region. The fin structure includes top and bottom fin portions and includes channel and non-channel regions defined along the length of the fin structure. An isolation layer is formed on the substrate. The isolation layer has a top isolation surface disposed below a top fin surface, leaving the top fin portion exposed. At least a portion of the exposed top fin portion in the channel region is processed to form a sharpened tip profile at top of the fin. A gate having a gate dielectric and a metal gate electrode is formed over the substrate. The gate wraps around the channel region of the fin structure.

5. 发明授权

US09725324B2 Graphene quantum dots synthesis method 有权
公开(公告)号：US09725324B2
公开(公告)日：2017-08-08
申请号：US14808630
申请日：2015-07-24
申请人： CHUNG YUAN CHRISTIAN UNIVERSITY
发明人： Ji-Lin Shen , Tzu-Neng Lin , Ken-Hua Chih
IPC分类号： C01B31/04 , B82Y40/00
CPC分类号： C01B32/182 , B82Y40/00 , C01B32/184 , C01B32/192 , C01B32/196 , Y10S977/774 , Y10S977/888
摘要： A graphene quantum dots synthesis method includes fixing a graphene aqueous solution or a graphene oxide aqueous solution on a spin coater to spin the graphene aqueous solution or the graphene oxide aqueous solution, and irradiating a pulsed laser to focus on a graphene aqueous solution or a graphene oxide aqueous solution to generate exfoliation. After a processing period, quantum dots are generated in the graphene aqueous solution or the graphene oxide aqueous solution. Since graphene aqueous solution or graphene oxide aqueous solution does not contain organic chemistry pharmacy, the quantum dots synthesized by the method of the present invention can be produced without pollution. Furthermore, the purpose of simple process, low cost, and time-saved of synthesis can be achieved.

6. 发明申请

US20170125519A1 PROCESS FOR FABRICATING VERTICALLY-ALIGNED GALLIUM ARSENIDE SEMICONDUCTOR NANOWIRE ARRAY OF LARGE AREA 审中-公开
公开(公告)号：US20170125519A1
公开(公告)日：2017-05-04
申请号：US15317922
申请日：2014-06-25
申请人： KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
发明人： Woo LEE , Jeong Ho SHIN
IPC分类号： H01L29/06 , H01L29/20 , H01L21/306
CPC分类号： H01L29/0676 , B82B3/00 , B82B3/0014 , B82B3/0019 , B82Y10/00 , B82Y40/00 , H01L21/30612 , H01L21/30635 , H01L21/3086 , H01L29/20 , Y10S977/762 , Y10S977/819 , Y10S977/888
摘要： The present invention relates to a method for manufacturing a GaAs semiconductor nanowire in a bottom-up type and, more particularly, to a method for manufacturing a vertically-aligned gallium arsenide semiconductor nanowire array in a large area by applying a voltage and a current from the outside using a metal thin film, which has been made through an economical method of fabricating a mesh-type metal thin film in a large area, as an anode such that holes (h+) are injected into a gallium arsenide substrate, thereby inducing a wet etching process continuously. The obtained vertically-aligned gallium arsenide semiconductor nanowire of a large area can be applied to fabrication of nanoelements, such as a solar cell, a transistor, and a light-emitting diode.

7. 发明申请

US20160368772A1 Efficient NanoMaterials manufacturing process and equipment 审中-公开
标题翻译：高效纳米材料制造工艺和设备
公开(公告)号：US20160368772A1
公开(公告)日：2016-12-22
申请号：US15161163
申请日：2016-05-20
申请人： Yu-Chen Chen , Guoming Zhong
发明人： Yu-Chen Chen , Guoming Zhong
IPC分类号： C01B31/04 , C01G39/06 , C01B25/00 , C01B21/064
CPC分类号： C01B25/003 , B82Y30/00 , B82Y40/00 , C01B21/064 , C01B32/184 , C01B32/23 , C01G39/06 , Y02P20/124 , Y10S977/888
摘要： An efficient method has been invented to make or manufacture holey (or porous) nanomaterials such as 2D graphene by using microwave or similar efficient energy like infrared or halogen oven. The graphene can be put in microwave oven, as example but not limited to, without any catalysts or solvents used during the processes.
摘要翻译：已经发明了一种有效的方法来通过使用微波或类似的有效能量如红外线或卤素炉来制造或制造多孔（或多孔）纳米材料，例如2D石墨烯。石墨烯可以放置在微波炉中，例如但不限于在工艺期间没有使用任何催化剂或溶剂。

8. 发明申请

US20160256403A1 BIOCOMPATIBLE GRAPHENE QUANTUM DOTS FOR DRUG DELIVERY AND BIOIMAGING APPLICATIONS 有权
标题翻译：用于药物输送和生物利用应用的生物成分量子
公开(公告)号：US20160256403A1
公开(公告)日：2016-09-08
申请号：US15033513
申请日：2014-11-03
申请人： COUNCIL OF SCIENTIFIC AND INDUSTRIAL RESEARCH
发明人： Neetu Singh , Anil Chandra
IPC分类号： A61K9/51 , C25F3/02 , A61K49/00
CPC分类号： A61K9/5146 , A61K49/0067 , B82Y5/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C01B32/184 , C25B1/00 , C25F3/02 , Y10S977/774 , Y10S977/788 , Y10S977/888 , Y10S977/90 , Y10S977/906 , Y10S977/927
摘要： In this work we have targeted two aspects of GQDs, Size and ROS to reduce their cytotoxicity. Small size can damage cell organelles and production of ROS (reactive oxygen species) can hamper cell machinery in multiple ways. We have shown that cytotoxicity can be significantly reduced by embedding GQDs inside the PEG matrix rather than creating a thin shell around each GQD. Thin PEG shell around GQD can control ROS production but cannot circumvent the toxicity due to small size. Thus it was essential to solve both the issues. We have used a simple electrochemical method (12 h at room temperature) for synthesizing GQDs and embedded them in PEG matrix via a simple one step hydrothermal reaction (24 h at 160° C.) involving only GQDs, PEG, and deionized water. The P-GQDs formed after hydrothermal reaction show nanoparticles of diameter of ˜80-100 nm containing GQDs entrapped in PEG matrix. MTT assay showed significant 60% cells viability at a very high concentration of 5.5 mg/mL of P-GQDs compared to 10-15% viability for C-GQD and H-GQD. ROS production by P-GQDs was least compared to C-GQD and H-GQD in cell free and intracellular ROS assay suggesting involvement of ROS in cytotoxicity. In this work we have solved the issue of cytotoxicity due to ‘small size’ and ‘ROS generation’ without compromising with fluorescence properties of GQDs. P-GQDs was used for bioimaging and drug delivery in HeLa cells. In short we can obtain biocompatible P-GQDs in very short span of time with minimal use of hazardous chemicals and simple methodology.
摘要翻译：在这项工作中，我们针对GQD，Size和ROS的两个方面来降低细胞毒性。小尺寸可以破坏细胞器并产生ROS（活性氧）可以以多种方式阻碍细胞机械。我们已经表明，通过将GQD嵌入PEG基质内而不是在每个GQD周围创建一个薄壳，可显着降低细胞毒性。 GQD周围的薄PEG壳可以控制ROS生产，但由于体积小，无法规避毒性。因此，解决这两个问题至关重要。我们使用简单的电化学方法（室温下12小时）合成GQD，并通过简单的一步水热反应（160℃下24小时）将其包埋在PEG基质中，仅涉及GQD，PEG和去离子水。在水热反应后形成的P-GQDs显示含有截留在PEG基质中的GQD的直径为〜80-100nm的纳米颗粒。在非常高浓度的5.5mg / mL P-GQD中，MTT测定显示60％的细胞活力，而C-GQD和H-GQD的生存能力为10-15％。与无细胞和细胞内ROS测定中的C-GQD和H-GQD相比，P-GQD的ROS产生最少，表明ROS参与细胞毒性。在这项工作中，我们解决了由于“小尺寸”和“ROS生成”引起的细胞毒性问题，而不影响GQD的荧光特性。 P-GQD用于HeLa细胞中的生物成像和药物递送。简而言之，我们可以在很短的时间内获得生物相容的P-GQD，最少使用危险化学品和简单的方法。

9. 发明授权

US09337220B2 Solar blind ultra violet (UV) detector and fabrication methods of the same 有权
公开(公告)号：US09337220B2
公开(公告)日：2016-05-10
申请号：US14705380
申请日：2015-05-06
申请人： ZENA TECHNOLOGIES, INC.
发明人： Young-June Yu , Munib Wober
IPC分类号： H01L21/02 , H01L27/146 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L31/0352 , F21V9/08 , G02B5/22 , H01L31/18 , G09F13/00 , H01L27/144 , B82Y99/00
CPC分类号： H01L27/14607 , B82Y20/00 , B82Y30/00 , B82Y40/00 , B82Y99/00 , F21V9/08 , G02B5/22 , G09F13/00 , H01L27/1446 , H01L27/14603 , H01L27/14629 , H01L27/14692 , H01L31/035227 , H01L31/107 , H01L31/18 , Y10S977/762 , Y10S977/888 , Y10S977/954 , Y10T428/24174 , Y10T428/24893
摘要： Described herein is device configured to be a solar-blind UV detector comprising a substrate; a plurality of pixels; a plurality of nanowires in each of the plurality of pixel, wherein the plurality of nanowires extend essentially perpendicularly from the substrate.

10. 发明申请

US20160087600A1 NANOMECHANICAL RESONATOR ARRAY AND PRODUCTION METHOD THEREOF 有权
标题翻译： NANOMANAN共振器阵列及其生产方法
公开(公告)号：US20160087600A1
公开(公告)日：2016-03-24
申请号：US14785535
申请日：2013-04-19
申请人： KOC UNIVERSITESI
发明人： Burhanettin Erdem Alaca , Yusuf Leblebici , Ismail Yorulmaz , Yasin Kilinc , Bekir Aksoy
IPC分类号： H03H9/24 , B82B1/00 , H03B5/30
CPC分类号： H03H9/2463 , B82B1/005 , B82Y15/00 , B82Y40/00 , H03B5/30 , H03H9/2405 , H03H2009/02291 , Y10S977/762 , Y10S977/888 , Y10S977/956
摘要： In the present invention, a nanomechanical resonator array (1), which is suitable being used in an oscillator and production method of said nanomechanical resonator array are developed. Said resonator array (1) comprises at least two resonators (2), which are in the size of nanometers, which are vertically arrayed and which are preferably in the form of nano-wire or nano-tube; at least one coupling membrane (3), which mechanically couples said resonators (2) from their one ends, and at least one clamping element (4), which supports mechanical coupling by clamping said coupling membrane (3). Said resonator array (1) can be actuated and its displacements can be sensed. The present invention develops a predictive model of the frequency response of an oscillator comprising the said resonator array (1) for electrostatic actuation and capacitive readout. An oscillator comprised of multiple resonator arrays (1) with different frequency responses connected to a frequency manipulation circuitry can be used as well. For silicon-based systems, said production method comprises the steps of patterning two windows on device silicon layer exposing it to plasma etching using Bosch process; carrying out a further oxidation to form nanowires in an oxide envelop; depositing further sacrificial material. Actuation and readout electrode integration comprises steps of electrode material deposition; self-aligned mask material deposition, chemical mechanical polishing; electrode material etch; releasing nanowires by etching sacrificial material and oxide envelope. For non-silicon-based systems, said production method comprises the steps of structural and sacrificial material deposition; patterning and anisotropic etching of both materials; isotropic etching of sacrificial material.
摘要翻译：在本发明中，开发了适用于振荡器的纳米机械谐振器阵列（1）和所述纳米机械谐振器阵列的制造方法。所述谐振器阵列（1）包括至少两个垂直排列的纳米尺寸的谐振器（2），其优选地是纳米线或纳米管的形式; 至少一个耦合膜（3），其将所述谐振器（2）从其一端机械耦合，以及至少一个夹紧元件（4），其通过夹紧所述耦合膜（3）来支撑机械耦合。可以致动所述谐振器阵列（1），并且可以感测其位移。本发明开发了包括用于静电驱动和电容读出的所述谐振器阵列（1）的振荡器的频率响应的预测模型。也可以使用包括具有连接到频率操纵电路的不同频率响应的多个谐振器阵列（1）的振荡器。对于基于硅的系统，所述制造方法包括以下步骤：在器件硅层上图案化两个窗口，将其暴露于使用Bosch工艺的等离子体蚀刻; 进行进一步氧化以在氧化物包层中形成纳米线; 沉积更多的牺牲材料。驱动和读出电极整合包括电极材料沉积的步骤; 自对准掩模材料沉积，化学机械抛光; 电极材料蚀刻; 通过蚀刻牺牲材料和氧化物包层释放纳米线。对于非硅系统，所述生产方法包括结构和牺牲材料沉积步骤; 两种材料的图案化和各向异性蚀刻; 牺牲材料的各向同性蚀刻。

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