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1. 发明授权

US08101200B2 Targeted therapeutic agent release devices and methods of making and using the same 失效
标题翻译：靶向治疗剂释放装置及其制造和使用方法
公开(公告)号：US08101200B2
公开(公告)日：2012-01-24
申请号：US09834307
申请日：2001-04-12
申请人： Richard J. Whitbourne , Daniel Hullihen , Michael R. Violante , Frank Guo-Bin Wang , Xianping Zhang
发明人： Richard J. Whitbourne , Daniel Hullihen , Michael R. Violante , Frank Guo-Bin Wang , Xianping Zhang
IPC分类号： A61F2/00
CPC分类号： A61K9/0024 , A61L27/34 , A61L27/54 , A61L2300/414 , A61L2300/416 , A61L2300/606
摘要： Generally, the present invention provides devices and methods for delivering high, efficacious concentrations of therapeutic agents, i.e., medicaments such as drugs, antibiotics, etc., to specific sites in a patient's body, such as tumors and infected lesions. In one aspect of the present invention there are provided devices to accomplish the aforesaid delivery of therapeutic agents and methods to accomplish the delivery by positioning a device in the body using minimally invasive techniques such as, for example, catheterization or via trochar. The devices may contain a carrier substrate and a coating on the substrate. The carrier substrate provides structural integrity to the device and the coating thereon contains at least one layer of polymeric material containing one or more medicaments. Optionally, there may be a non-medicated binder coat between the carrier substrate and the medicated polymer layer. The medicated polymer layer may contain a hydrophilic/hydrophobic polymer composition.
摘要翻译：通常，本发明提供了用于将高效，有效浓度的治疗剂（例如药物，抗生素等）的药物递送到患者体内的特定部位（例如肿瘤和感染的病变）的装置和方法。在本发明的一个方面，提供了用于实现上述递送治疗剂的装置和通过使用微创技术（例如导管插入术或定位装置）将装置定位在体内来实现递送的方法。所述装置可以包含载体基底和基底上的涂层。载体基底为装置提供结构完整性，并且其上的涂层包含至少一层含有一种或多种药物的聚合材料层。任选地，在载体基质和含药聚合物层之间可以存在非药物粘合剂涂层。含药聚合物层可以含有亲水/疏水聚合物组合物。

2. 发明授权

US07855403B2 Hybrid carbon nanotube FET (CNFET)-FET static RAM (SRAM) and method of making same 有权
标题翻译：混合碳纳米管FET（CNFET）-FET静态RAM（SRAM）及其制造方法
公开(公告)号：US07855403B2
公开(公告)日：2010-12-21
申请号：US12569460
申请日：2009-09-29
申请人： Claude L. Bertin , Mitchell Meinhold , Steven L. Konsek , Thomas Rueckes , Frank Guo
发明人： Claude L. Bertin , Mitchell Meinhold , Steven L. Konsek , Thomas Rueckes , Frank Guo
IPC分类号： H01L29/76
CPC分类号： G11C13/0033 , B82Y10/00 , G11C11/412 , G11C13/025 , G11C2213/17 , H01L27/0688 , H01L27/11 , H01L27/1104 , H01L27/1108 , H01L27/283 , H01L51/0048 , H01L51/0516 , H01L51/0545 , Y10S257/903 , Y10S977/762 , Y10S977/938
摘要： Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube FETs (NTFETs), each having a channel region made of at least one semiconductive nanotube, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET.
摘要翻译：混合碳纳米管FET（CNFET），静态RAM（SRAM）及其制造方法。静态柱式存储单元具有两个交叉耦合半导体型场效应晶体管（FET）和两个纳米管FET（NTFET），每个具有由至少一个半导体纳米管制成的沟道区域，第一NTFET连接到漏极或源极连接到第二半导体型FET的漏极或源极的第一半导体型FET和第二NTFET。

3. 发明授权

US07598544B2 Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same 有权
标题翻译：混合碳[纳米管]纳米管FET（CNFET）-FET静态RAM（SRAM）及其制造方法
公开(公告)号：US07598544B2
公开(公告)日：2009-10-06
申请号：US11332080
申请日：2006-01-13
申请人： Claude L. Bertin , Mitchell Meinhold , Steven L. Konsek , Thomas Rueckes , Frank Guo
发明人： Claude L. Bertin , Mitchell Meinhold , Steven L. Konsek , Thomas Rueckes , Frank Guo
IPC分类号： H01L27/11 , H01L21/8244
CPC分类号： G11C13/0033 , B82Y10/00 , G11C11/412 , G11C13/025 , G11C2213/17 , H01L27/0688 , H01L27/11 , H01L27/1104 , H01L27/1108 , H01L27/283 , H01L51/0048 , H01L51/0516 , H01L51/0545 , Y10S257/903 , Y10S977/762 , Y10S977/938
摘要： Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube FETs (NTFETs), each having a channel region made of at least one semiconductive nanotube, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET.
摘要翻译：混合碳纳米管FET（CNFET），静态RAM（SRAM）及其制造方法。静态柱式存储单元具有两个交叉耦合半导体型场效应晶体管（FET）和两个纳米管FET（NTFET），每个具有由至少一个半导体纳米管制成的沟道区域，第一NTFET连接到漏极或源极连接到第二半导体型FET的漏极或源极的第一半导体型FET和第二NTFET。

4. 发明申请

US20090154218A1 MEMORY ARRAYS USING NANOTUBE ARTICLES WITH REPROGRAMMABLE RESISTANCE 有权
标题翻译：使用具有可耐受性的纳米颗粒的记忆体阵列
公开(公告)号：US20090154218A1
公开(公告)日：2009-06-18
申请号：US12354102
申请日：2009-01-15
申请人： Claude L. BERTIN , Frank GUO , Thomas RUECKES , Steven L. KONSEK , Mitchell MEINHOLD , Max STRASBURG , Ramesh SIVARAJAN , X. M. Henry HUANG
发明人： Claude L. BERTIN , Frank GUO , Thomas RUECKES , Steven L. KONSEK , Mitchell MEINHOLD , Max STRASBURG , Ramesh SIVARAJAN , X. M. Henry HUANG
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C13/0002 , G11C2213/16 , G11C2213/19 , G11C2213/35 , G11C2213/79
摘要： A memory array includes a plurality of memory cells, each of which receives a bit line, a first word line, and a second word line. Each memory cell includes a cell selection circuit, which allows the memory cell to be selected. Each memory cell also includes a two-terminal switching device, which includes first and second conductive terminals in electrical communication with a nanotube article. The memory array also includes a memory operation circuit, which is operably coupled to the bit line, the first word line, and the second word line of each cell. The circuit can select the cell by activating an appropriate line, and can apply appropriate electrical stimuli to an appropriate line to reprogrammably change the relative resistance of the nanotube article between the first and second terminals. The relative resistance corresponds to an informational state of the memory cell.
摘要翻译：存储器阵列包括多个存储器单元，每个存储单元接收位线，第一字线和第二字线。每个存储单元包括单元选择电路，其允许选择存储单元。每个存储单元还包括两端开关器件，其包括与纳米管制品电连通的第一和第二导电端子。存储器阵列还包括可操作地耦合到每个单元的位线，第一字线和第二字线的存储器操作电路。电路可以通过激活适当的线路来选择电池，并且可以将适当的电刺激施加到适当的线以可重新编程地改变第一和第二端子之间的纳米管制品的相对电阻。相对电阻对应于存储单元的信息状态。

5. 发明申请

US20080159042A1 LATCH CIRCUITS AND OPERATION CIRCUITS HAVING SCALABLE NONVOLATILE NANOTUBE SWITCHES AS ELECTRONIC FUSE REPLACEMENT ELEMENTS 有权
标题翻译：具有可拆卸非易失性纳米管开关的电路和操作电路作为电子保险丝更换元件
公开(公告)号：US20080159042A1
公开(公告)日：2008-07-03
申请号：US11835583
申请日：2007-08-08
申请人： Claude L. BERTIN , Thomas RUECKES , Jonathan W. WARD , Frank GUO , Steven L. KONSEK , Mitchell MEINHOLD
发明人： Claude L. BERTIN , Thomas RUECKES , Jonathan W. WARD , Frank GUO , Steven L. KONSEK , Mitchell MEINHOLD
IPC分类号： G11C11/34 , G11C17/16
CPC分类号： B82Y10/00 , G11C13/025 , G11C17/14 , G11C17/143 , G11C17/16 , G11C17/165 , G11C17/18 , G11C2213/19 , H01L23/5256 , H01L27/101 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , Y10S977/943 , H01L2924/00
摘要： A non-volatile latch circuit is provided. The non-volatile latch circuit includes a nanotube switching element capable of switching between resistance states and non-volatilely retaining the resistance state. The non-volatile latch circuit includes a volatile latch circuit is capable of receiving and volatilely storing a logic state. When the nanotube switching element is a resistance state, the volatile latch circuit retains a corresponding logic state and outputs that corresponding logic state at an output terminal. A non-volatile register file configuration circuit for use with a plurality of non-volatile register files is also provided. The non-volatile register file configuration circuit includes a selection circuitry and a plurality of nanotube fuse elements, each in electrical communication with one of a plurality of non-volatile register files. The selection circuitry is capable of applying electrical stimulus to each of the selected nanotube fuse elements to selectively bypass the corresponding register file.
摘要翻译：提供非易失性锁存电路。非易失性锁存电路包括能够在电阻状态之间切换并且非易失性地保持电阻状态的纳米管开关元件。非易失性锁存电路包括易失性锁存电路，其能够接收和不稳定地存储逻辑状态。当纳米管开关元件为电阻状态时，易失性锁存电路保持相应的逻辑状态，并在输出端输出相应的逻辑状态。还提供了与多个非易失性寄存器文件一起使用的非易失性寄存器文件配置电路。非易失性寄存器文件配置电路包括选择电路和多个纳米管熔丝元件，每个纳米管熔丝元件与多个非易失性寄存器文件中的一个电气通信。选择电路能够对每个选定的纳米管熔丝元件施加电刺激以选择性地绕过相应的寄存器文件。

6. 发明申请

US20060183278A1 Field effect device having a channel of nanofabric and methods of making same 有权
公开(公告)号：US20060183278A1
公开(公告)日：2006-08-17
申请号：US11332529
申请日：2006-01-13
申请人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Rueckes , Frank Guo
发明人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Rueckes , Frank Guo
IPC分类号： H01L21/8234 , H01L29/76
CPC分类号： B82Y10/00 , H01L21/823807 , H01L51/0048 , H01L51/0052 , H01L51/0508 , H01L51/0541
摘要： Field effect devices having channels of nanofabric and methods of making same. A nanotube field effect transistor is made to have a substrate, and a drain region and a source region in spaced relation relative to each other. A channel region is formed from a fabric of nanotubes, in which the nanotubes of the channel region are substantially all of the same semiconducting type of nanotubes. At least one gate is formed in proximity to the channel region so that the gate may be used to modulate the conductivity of the channel region so that a conductive path may be formed between the drain and source region. Forming a channel region includes forming a fabric of nanotubes in which the fabric has both semiconducting and metallic nanotubes and the fabric is processed to remove substantially all of the metallic nanotubes.

7. 发明授权

US06982903B2 Field effect devices having a source controlled via a nanotube switching element 有权
标题翻译：通过纳米管开关元件控制源极的场效应器件
公开(公告)号：US06982903B2
公开(公告)日：2006-01-03
申请号：US10864045
申请日：2004-06-09
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Frank Guo
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Frank Guo
IPC分类号： G11C11/00
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Field effect devices having a source controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconductor type. The drain region is connected to a corresponding terminal. A gate structure is disposed over the channel region and connected to a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the source region and a terminal corresponding to the source region. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the source region and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.
摘要翻译：通过纳米管开关元件控制源极的场效应器件。在一个实施例中，场效应器件包括第一半导体类型的源极区域和漏极区域以及设置在第二半导体类型之间的沟道区域。漏极区域连接到相应的端子。栅极结构设置在沟道区域上并连接到相应的端子。纳米管开关元件响应于第一控制端子和第二控制端子，并且电源定位在源极区域和与源极区域对应的端子之间。纳米管开关元件在机电上可操作为打开和关闭状态之一，从而打开或关闭源极区域与其对应端子之间的电连通路径。当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。

8. 发明申请

US20050056866A1 Circuit arrays having cells with combinations of transistors and nanotube switching elements 有权
公开(公告)号：US20050056866A1
公开(公告)日：2005-03-17
申请号：US10864681
申请日：2004-06-09
申请人： Claude Bertin , Thomas Rueckes , Brent Segal , Frank Guo
发明人： Claude Bertin , Thomas Rueckes , Brent Segal , Frank Guo
IPC分类号： G11C7/06 , G11C8/02 , G11C11/00 , G11C11/50 , G11C13/02 , G11C16/02 , G11C16/04 , G11C17/16 , G11C23/00 , H01H59/00 , H01J1/62 , H01L20060101 , H01L21/336 , H01L21/82 , H01L21/8246 , H01L27/112 , H01L27/115 , H01L27/28 , H01L29/06 , H01L29/423 , H01L29/739 , H01L29/745 , H01L29/76 , H01L51/00 , H01L51/05 , H01L51/30 , H03K17/16
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Circuit arrays having cells with combinations of transistors and nanotube switches. Under one embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each cell is responsive to a bit line, word line, reference line, and release line. Bit lines are arranged orthogonally relative to word lines and each word line and bit line are shared among a plurality of cells. Each cell is selectable via the activation of the bit line and word line. Each cell includes a field effect transistor coupled to a nanotube switching element. The nanotube switching element is switchable to at least two physical positions at least in part in response to electrical stimulation via the reference line and release line. Information state of the cell is non-volatilely stored via the respective physical position of the nanotube switching element. Under another embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each cell is responsive to a bit line, word line, and reference line. Each word line and bit line are shared among a plurality of cells. Each cell is selectable via the activation of the bit line and word line. Each cell includes a field effect transistor and a nanotube switching element. Each nanotube switching element includes a nanotube article positioned between a set electrode and a release electrode. The set electrode may be electrically stimulated to electro-statically attract the nanotube article into contact with the set electrode and the release electrode may be electrically stimulated to electro-statically attract the nanotube article out of contact with the set electrode. Information state of the cell is non-volatilely stored via the respective physical position of the nanotube switching element. Cells are arranged as pairs with the nanotube switching elements of the pair being cross coupled so that the set electrode of one nanotube switching element is coupled to the release electrode of the other and the release electrode of the one nanotube switching element being coupled to the set electrode of the other. The nanotube articles are coupled to the reference line, and the source of one field effect transistor of a pair is coupled to the set electrode to one of the two nanotube switching elements and the source of the other field effect transistor of the pair is coupled to the release electrode to the one of the two nanotube switching elements.

9. 发明申请

US20100012925A1 HYBRID CARBON NANOTUBE FET (CNFET)-FET STATIC RAM (SRAM) AND METHOD OF MAKING SAME 有权
标题翻译：混合碳纳米管FET（CNFET）-FET静态RAM（SRAM）及其制造方法
公开(公告)号：US20100012925A1
公开(公告)日：2010-01-21
申请号：US12569460
申请日：2009-09-29
申请人： Claude L. BERTIN , Mitchell MEINHOLD , Steven L. KONSEK , Thomas RUECKES , Frank GUO
发明人： Claude L. BERTIN , Mitchell MEINHOLD , Steven L. KONSEK , Thomas RUECKES , Frank GUO
IPC分类号： H01L29/66 , H01L27/11
CPC分类号： G11C13/0033 , B82Y10/00 , G11C11/412 , G11C13/025 , G11C2213/17 , H01L27/0688 , H01L27/11 , H01L27/1104 , H01L27/1108 , H01L27/283 , H01L51/0048 , H01L51/0516 , H01L51/0545 , Y10S257/903 , Y10S977/762 , Y10S977/938
摘要： Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube FETs (NTFETs), each having a channel region made of at least one semiconductive nanotube, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET.
摘要翻译：混合碳纳米管FET（CNFET），静态RAM（SRAM）及其制造方法。静态柱式存储单元具有两个交叉耦合半导体型场效应晶体管（FET）和两个纳米管FET（NTFET），每个具有由至少一个半导体纳米管制成的沟道区域，第一NTFET连接到漏极或源极连接到第二半导体型FET的漏极或源极的第一半导体型FET和第二NTFET。

10. 发明申请

US20090052246A1 NON-VOLATILE SHADOW LATCH USING A NANOTUBE SWITCH 有权
标题翻译：使用NANOTUBE开关的非挥发性阴影线
公开(公告)号：US20090052246A1
公开(公告)日：2009-02-26
申请号：US12165007
申请日：2008-06-30
申请人： Claude L. BERTIN , Frank GUO , Thomas RUECKES , Steven L. KONSEK , Mitchell MEINHOLD , Max STRASBURG , Ramesh SIVARAJAN , X. M. HUANG
发明人： Claude L. BERTIN , Frank GUO , Thomas RUECKES , Steven L. KONSEK , Mitchell MEINHOLD , Max STRASBURG , Ramesh SIVARAJAN , X. M. HUANG
IPC分类号： G11C16/04 , G11C11/00 , G11C11/50 , G11C5/14
CPC分类号： G11C13/025 , B82Y10/00 , G11C13/0002 , G11C14/0054 , G11C2213/19 , G11C2213/35 , Y10S977/943
摘要： A non-volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage device. The shadow memory device receives and stores the corresponding logic state in response to electrical stimulus. The shadow memory device includes a non-volatile nanotube switch that stores the corresponding state of the shadow device.
摘要翻译：非易失性存储单元包括：易失性存储装置，其响应于电刺激而存储对应的逻辑状态; 以及耦合到所述易失性存储装置的影子存储装置。影子存储装置响应于电刺激而接收和存储对应的逻辑状态。影子存储装置包括存储影子装置的相应状态的非易失性纳米管开关。

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