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1. 发明申请

US20060250843A1 Non-volatile-shadow latch using a nanotube switch 有权
标题翻译：使用纳米管开关的非易失性阴影锁存器
公开(公告)号：US20060250843A1
公开(公告)日：2006-11-09
申请号：US11280599
申请日：2005-11-15
申请人： Claude Bertin , Frank Guo , Thomas Rueckes , Steven Konsek , Mitchell Meinhold , Max Strasburg , Ramesh Sivarajan , X.M. Huang
发明人： Claude Bertin , Frank Guo , Thomas Rueckes , Steven Konsek , Mitchell Meinhold , Max Strasburg , Ramesh Sivarajan , X.M. Huang
IPC分类号： G11C14/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C13/0033 , G11C14/00 , Y10S977/943
摘要： A non-volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage device. The shadow memory device receives and stores the corresponding logic state in response to electrical stimulus. The shadow memory device includes a non-volatile nanotube switch that stores the corresponding state of the shadow device.
摘要翻译：非易失性存储单元包括：易失性存储装置，其响应于电刺激而存储对应的逻辑状态; 以及耦合到所述易失性存储装置的影子存储装置。影子存储装置响应于电刺激而接收和存储对应的逻辑状态。影子存储装置包括存储影子装置的相应状态的非易失性纳米管开关。

2. 发明授权

US08766395B2 Schottky device 失效
标题翻译：肖特基装置
公开(公告)号：US08766395B2
公开(公告)日：2014-07-01
申请号：US13258720
申请日：2010-03-25
申请人： Steven Konsek
发明人： Steven Konsek
IPC分类号： H01L29/47
CPC分类号： H01L29/872 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/66143
摘要： A device includes a Schottky barrier formed by a metal-semiconductor junction between a semiconductor nanowire and a metal contact. The metal contact at least partly encloses a circumferential area of each nanowire along the length thereof. The nanowire includes a low doped region that is part of the metal-semiconductor junction. The device can be fabricated using a method where two different growth modes are used, the first step including axial growth from a substrate giving a suitable template for formation of the metal-semiconductor junction, and the second step including radial growth enabling control of the doping levels in the low doped region.
摘要翻译：一种器件包括由半导体纳米线和金属接触之间的金属 - 半导体结形成的肖特基势垒。金属接触部沿着其长度至少部分地包围每个纳米线的周向区域。纳米线包括作为金属 - 半导体结的一部分的低掺杂区域。该器件可以使用其中使用两种不同的生长模式的方法制造，第一步包括从衬底轴向生长，给出用于形成金属 - 半导体结的合适的模板，并且第二步骤包括使径向生长能够控制掺杂低掺杂区域的电平。

3. 发明申请

US20120012968A1 SCHOTTKY DEVICE 失效
标题翻译：肖特设备
公开(公告)号：US20120012968A1
公开(公告)日：2012-01-19
申请号：US13258720
申请日：2010-03-25
申请人： Steven Konsek
发明人： Steven Konsek
IPC分类号： H01L29/872 , H01L21/329 , B82Y99/00
CPC分类号： H01L29/872 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/66143
摘要： A device according to the invention comprises a Schottky barrier formed by a metal-semiconductor junction between a semiconductor nanowire (1) and a metal contact (5). The metal contact (5) at least partly encloses a circumferential area of each nanowire (1) along the length thereof. The nanowire (2) comprises a lowly doped region that is part of the metal-semiconductor junction. This lowly doped region can be formed by a nanowire segment, by the entire nanowire or in a core-shell configuration with a highly doped nanowire core (3) and the lowly doped region comprised in a shell (4). The device can be fabricated using a method according to the invention, where two different growth modes are used, the first comprising axial growth from a substrate (2) giving a suitable template for formation of the metal-semiconductor junction and the second step comprising radial growth enabling control of the doping levels in the lowly doped region.
摘要翻译：根据本发明的器件包括由半导体纳米线（1）和金属接触（5）之间的金属 - 半导体结形成的肖特基势垒。金属接触件（5）沿其长度至少部分地包围每个纳米线（1）的周向区域。纳米线（2）包括作为金属 - 半导体结的一部分的低掺杂区域。该低掺杂区域可以由纳米线段，整个纳米线或具有高度掺杂的纳米线芯（3）的芯 - 壳配置和包含在壳（4）中的低掺杂区）形成。该装置可以使用根据本发明的方法制造，其中使用两种不同的生长模式，第一种方法包括从衬底（2）的轴向生长，给出用于形成金属 - 半导体结的合适的模板，并且第二步骤包括径向生长能够控制低掺杂区域中的掺杂水平。

4. 发明申请

US20080012047A1 Two-terminal nanotube devices and systems and methods of making same 有权
标题翻译：两端纳米管装置及其制造方法
公开(公告)号：US20080012047A1
公开(公告)日：2008-01-17
申请号：US11280786
申请日：2005-11-15
申请人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Ruckes , Max Strasburg , Frank Guo , X. M. Huang , Ramesh Sivarajan
发明人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Ruckes , Max Strasburg , Frank Guo , X. M. Huang , Ramesh Sivarajan
IPC分类号： H01L29/76 , H01L29/745
CPC分类号： H01L27/112 , B82Y10/00 , G11C13/0002 , G11C13/025 , G11C17/16 , G11C17/165 , G11C2213/19 , G11C2213/77 , G11C2213/79 , H01L27/1052 , Y10S977/943
摘要： A two terminal switching device includes first and second conductive terminals and a nanotube article. The article has at least one nanotube, and overlaps at least a portion of each of the first and second terminals. The device also includes a stimulus circuit in electrical communication with at least one of the first and second terminals. The circuit is capable of applying first and second electrical stimuli to at least one of the first and second terminal(s) to change the relative resistance of the device between the first and second terminals between a relatively high resistance and a relatively low resistance. The relatively high resistance between the first and second terminals corresponds to a first state of the device, and the relatively low resistance between the first and second terminals corresponds to a second state of the device.
摘要翻译：二端开关器件包括第一和第二导电端子和纳米管制品。该制品具有至少一个纳米管，并且与第一和第二端子中的每一个的至少一部分重叠。该装置还包括与第一和第二端子中的至少一个电连通的激励电路。电路能够将第一和第二电刺激施加到第一和第二端子中的至少一个，以在相对较高电阻和相对较低电阻之间改变第一和第二端子之间的器件的相对电阻。第一和第二端子之间的相对高的电阻对应于器件的第一状态，并且第一和第二端子之间的相对较低的电阻对应于器件的第二状态。

5. 发明授权

US08669574B2 Nanostructured LED 有权
标题翻译：纳米结构LED
公开(公告)号：US08669574B2
公开(公告)日：2014-03-11
申请号：US13002906
申请日：2009-07-07
申请人： Steven Konsek , Jonas Ohlsson , Yourii Martynov , Peter Hanberg
发明人： Steven Konsek , Jonas Ohlsson , Yourii Martynov , Peter Hanberg
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , B82Y20/00 , F21S41/141 , F21S41/663 , F21Y2105/10 , F21Y2115/10 , H01L27/153 , H01L27/156 , H01L33/08 , H01L33/18 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/60 , H01L2924/0002 , Y10S977/762 , Y10S977/95 , H01L2924/00
摘要： The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light-reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.
摘要翻译：根据本发明的装置包括具有从衬底的第一区域突出的第一组纳米线的纳米结构LED和在衬底的第二区域中的接触装置。第一组纳米线的每个纳米线包括p-i-n结和每个纳米线的顶部，或者至少一个纳米线选择被光反射接触层覆盖。第二区域的接触装置与纳米线的底部电接触，光反射接触层经由p-i-n结与第二区域的接触装置电接触。因此，当在第二区域的接触装置和光反射接触层之间施加电压时，在纳米线内产生光。在光反射接触层的顶部，可提供用于倒装芯片接合的第一组接触焊盘，分布和分离以均衡跨越该层的电压以减小平均串联电阻。

6. 发明申请

US20110254034A1 NANOSTRUCTURED LED 有权
公开(公告)号：US20110254034A1
公开(公告)日：2011-10-20
申请号：US13002906
申请日：2009-07-07
申请人： Steven Konsek , Jonas Ohlsson , Yourii Martynov , Peter Hanberg
发明人： Steven Konsek , Jonas Ohlsson , Yourii Martynov , Peter Hanberg
IPC分类号： H01L33/60 , B82Y20/00
CPC分类号： H01L33/62 , B82Y20/00 , F21S41/141 , F21S41/663 , F21Y2105/10 , F21Y2115/10 , H01L27/153 , H01L27/156 , H01L33/08 , H01L33/18 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/60 , H01L2924/0002 , Y10S977/762 , Y10S977/95 , H01L2924/00
摘要： The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light-reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.
摘要翻译：根据本发明的装置包括具有从衬底的第一区域突出的第一组纳米线的纳米结构LED和在衬底的第二区域中的接触装置。第一组纳米线的每个纳米线包括p-i-n结和每个纳米线的顶部，或者至少一个纳米线选择被光反射接触层覆盖。第二区域的接触装置与纳米线的底部电接触，光反射接触层经由p-i-n结与第二区域的接触装置电接触。因此，当在第二区域的接触装置和光反射接触层之间施加电压时，在纳米线内产生光。在光反射接触层的顶部，可提供用于倒装芯片接合的第一组接触焊盘，分布和分离以均衡跨越该层的电压以减小平均串联电阻。

7. 发明申请

US20060183278A1 Field effect device having a channel of nanofabric and methods of making same 有权
公开(公告)号：US20060183278A1
公开(公告)日：2006-08-17
申请号：US11332529
申请日：2006-01-13
申请人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Rueckes , Frank Guo
发明人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Rueckes , Frank Guo
IPC分类号： H01L21/8234 , H01L29/76
CPC分类号： B82Y10/00 , H01L21/823807 , H01L51/0048 , H01L51/0052 , H01L51/0508 , H01L51/0541
摘要： Field effect devices having channels of nanofabric and methods of making same. A nanotube field effect transistor is made to have a substrate, and a drain region and a source region in spaced relation relative to each other. A channel region is formed from a fabric of nanotubes, in which the nanotubes of the channel region are substantially all of the same semiconducting type of nanotubes. At least one gate is formed in proximity to the channel region so that the gate may be used to modulate the conductivity of the channel region so that a conductive path may be formed between the drain and source region. Forming a channel region includes forming a fabric of nanotubes in which the fabric has both semiconducting and metallic nanotubes and the fabric is processed to remove substantially all of the metallic nanotubes.

8. 发明申请

US20060250856A1 Memory arrays using nanotube articles with reprogrammable resistance 有权
公开(公告)号：US20060250856A1
公开(公告)日：2006-11-09
申请号：US11274967
申请日：2005-11-15
申请人： Claude Bertin , Frank Guo , Thomas Rueckes , Steven Konsek , Mitchell Meinhold , Max Strasburg , Ramesh Sivarajan , X. M. Huang
发明人： Claude Bertin , Frank Guo , Thomas Rueckes , Steven Konsek , Mitchell Meinhold , Max Strasburg , Ramesh Sivarajan , X. M. Huang
IPC分类号： G11C7/10
CPC分类号： G11C13/025 , B82Y10/00 , G11C13/0002 , G11C2213/16 , G11C2213/19 , G11C2213/35 , G11C2213/79
摘要： A memory array includes a plurality of memory cells, each of which receives a bit line, a first word line, and a second word line. Each memory cell includes a cell selection circuit, which allows the memory cell to be selected. Each memory cell also includes a two-terminal switching device, which includes first and second conductive terminals in electrical communication with a nanotube article. The memory array also includes a memory operation circuit, which is operably coupled to the bit line, the first word line, and the second word line of each cell. The circuit can select the cell by activating an appropriate line, and can apply appropriate electrical stimuli to an appropriate line to reprogrammably change the relative resistance of the nanotube article between the first and second terminals. The relative resistance corresponds to an informational state of the memory cell.

9. 发明申请

US20060237857A1 Hybrid carbon nanotube FET(CNFET)-FET static RAM (SRAM) and method of making same 有权
标题翻译：混合碳纳米管FET（CNFET）-FET静态RAM（SRAM）及其制造方法
公开(公告)号：US20060237857A1
公开(公告)日：2006-10-26
申请号：US11332080
申请日：2006-01-13
申请人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Rueckes , Frank Guo
发明人： Claude Bertin , Mitchell Meinhold , Steven Konsek , Thomas Rueckes , Frank Guo
IPC分类号： H01L27/11
CPC分类号： G11C13/0033 , B82Y10/00 , G11C11/412 , G11C13/025 , G11C2213/17 , H01L27/0688 , H01L27/11 , H01L27/1104 , H01L27/1108 , H01L27/283 , H01L51/0048 , H01L51/0516 , H01L51/0545 , Y10S257/903 , Y10S977/762 , Y10S977/938
摘要： Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube FETs (NTFETs), each having a channel region made of at least one semiconductive nanotube, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET.
摘要翻译：混合碳纳米管FET（CNFET），静态RAM（SRAM）及其制造方法。静态柱式存储单元具有两个交叉耦合半导体型场效应晶体管（FET）和两个纳米管FET（NTFET），每个具有由至少一个半导体纳米管制成的沟道区域，第一NTFET连接到漏极或源极连接到第二半导体型FET的漏极或源极的第一半导体型FET和第二NTFET。

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