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1. 发明授权

US08659897B2 Liquid-cooled memory system having one cooling pipe per pair of DIMMs 有权
标题翻译：液冷存储器系统，每对DIMM有一个冷却管
公开(公告)号：US08659897B2
公开(公告)日：2014-02-25
申请号：US13360328
申请日：2012-01-27
申请人： Gerhard I. Meijer , Derek I. Schmidt , Mark E. Steinke , James S. Womble
发明人： Gerhard I. Meijer , Derek I. Schmidt , Mark E. Steinke , James S. Womble
IPC分类号： H05K7/20 , G06F1/20
CPC分类号： G06F1/20 , G06F2200/201
摘要： Each pair of memory modules in a memory system are cooled using a shared cooling pipe, such as a heat pipe or liquid flow pipe. An example embodiment includes one pair of memory module sockets on opposite sides of the respective cooling pipe. An inner heat spreader plate is thermally coupled to the cooling pipe and in thermal engagement with a first face of the memory module adjacent to the included cooling pipe. Heat is conducted from the second face of the memory module to the cooling pipe, such as from an outer plate in thermal engagement with an opposing second face of the memory modules and with the inner plate.
摘要翻译：存储器系统中的每对存储器模块使用诸如热管或液体流管的共用冷却管来冷却。示例实施例包括在相应冷却管的相对侧上的一对存储器模块插槽。内部散热板热耦合到冷却管并且与存储器模块的与附带的冷却管相邻的第一面热接合。热量从存储器模块的第二面传导到冷却管，例如从与存储器模块的相对的第二面和内板热接合的外板。

2. 发明授权

US07834384B2 Simultaneous conditioning of a plurality of memory cells through series resistors 有权
标题翻译：通过串联电阻同时调节多个存储单元
公开(公告)号：US07834384B2
公开(公告)日：2010-11-16
申请号：US12060922
申请日：2008-04-02
申请人： Toshijaru Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Chung H. Lam , Gerhard I. Meijer
发明人： Toshijaru Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Chung H. Lam , Gerhard I. Meijer
IPC分类号： H01L27/00
CPC分类号： H01L27/0629 , H01L27/101 , H01L27/24
摘要： Disclosed are a semiconductor structure and a method that allow for simultaneous voltage/current conditioning of multiple memory elements in a nonvolatile memory device with multiple memory cells. The structure and method incorporate the use of a resistor connected in series with the memory elements to limit current passing through the memory elements. Specifically, the method and structure incorporate a blanket temporary series resistor on the wafer surface above the memory cells and/or permanent series resistors within the memory cells. During the conditioning process, these resistors protect the transition metal oxide in the individual memory elements from damage (i.e., burn-out), once it has been conditioned.
摘要翻译：公开了一种半导体结构和方法，其允许在具有多个存储器单元的非易失性存储器件中同时对多个存储器元件进行电压/电流调节。该结构和方法结合使用与存储器元件串联连接的电阻器来限制电流通过存储器元件。具体地，该方法和结构在存储器单元上方的晶片表面上和/或存储器单元内的永久串联电阻器上并入一个橡皮布暂时串联电阻器。在调节过程中，一旦调节了这些电阻，这些电阻就可以保护各个存储元件中的过渡金属氧化物免受损坏（即烧坏）。

3. 发明授权

US07256415B2 Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells 有权
标题翻译：存储器件以及通过同时调节多个存储单元中的过渡金属氧化物层来制造器件的方法
公开(公告)号：US07256415B2
公开(公告)日：2007-08-14
申请号：US11140780
申请日：2005-05-31
申请人： Toshijaru Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Chung H. Lam , Gerhard I. Meijer
发明人： Toshijaru Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Chung H. Lam , Gerhard I. Meijer
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , H01L27/115 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/147 , Y10S438/90
摘要： Disclosed are non-volatile memory devices that incorporate a series of single or double memory cells. The single memory cells are essentially “U” shaped. The double memory cells comprise two essentially “U” shaped memory cells. Each memory cell comprises a memory element having a bi-stable layer sandwiched between two conductive layers. A temporary conductor may be applied to a series of cells and used to bulk condition the bi-stable layers of the cells. Also, due to the “U” shape of the cells, a cross point wire array may be used to connect a series of cells. The cross point wire array allows the memory elements of each cell to be individually identified and addressed for storing information and also allows for the information stored in the memory elements in all of the cells in the series to be simultaneously erased using a block erase process.
摘要翻译：公开了包含一系列单个或双重存储器单元的非易失性存储器件。单个存储器单元基本上是“U”形的。双重存储单元包括两个基本上“U”形的存储单元。每个存储单元包括具有夹在两个导电层之间的双稳态层的存储元件。临时导体可以应用于一系列的电池并且用于批量地调节电池的双稳态层。此外，由于电池的“U”形状，可以使用交叉点线阵列来连接一系列电池。交叉点线阵列允许每个单元的存储元件被单独识别和寻址用于存储信息，并且还允许使用块擦除处理同时擦除存储在串联中的所有单元中的存储器元件中的信息。

4. 发明授权

US06990008B2 Switchable capacitance and nonvolatile memory device using the same 失效
标题翻译：可切换电容和使用其的非易失性存储器件
公开(公告)号：US06990008B2
公开(公告)日：2006-01-24
申请号：US10985093
申请日：2004-11-10
申请人： Georg J. Bednorz , David J. Gundlach , Gerhard I. Meijer , Walter H. Riess
发明人： Georg J. Bednorz , David J. Gundlach , Gerhard I. Meijer , Walter H. Riess
IPC分类号： G11C11/24
CPC分类号： G11C13/00 , G11C11/22 , H01G7/06
摘要： A device (2) with a switchable capacitance comprises a first and a second electrode (12, 20) facing each other, a dielectric layer (14) between a first and a second capacitor electrode (12, 20), and a switching member (18) between the second electrode (20) and the dielectric layer (14), the switching member (18) comprising a switching material reversibly switchable between a lower conductivity state and a higher conductivity state, each of the lower conductivity state and the higher conductivity state being persistent, wherein the capacitance of the device (2) depends on the conductivity state of the switching material.
摘要翻译：具有可切换电容的装置（2）包括彼此面对的第一和第二电极（12,20），位于第一和第二电容器电极（12,20）之间的电介质层（14）和切换构件在第二电极（20）和电介质层（14）之间，切换构件（18）包括可在较低导电状态和较高导电率状态下可逆地切换的开关材料，每个较低导电率和较高导电率状态持续，其中所述器件（2）的电容取决于所述开关材料的导电性状态。

5. 发明申请

US20100039848A1 NON-VOLATILE PROGRAMMABLE OPTICAL ELEMENT EMPLOYING F-CENTERS 有权
标题翻译：非挥发性可编程光学元件使用F中心
公开(公告)号：US20100039848A1
公开(公告)日：2010-02-18
申请号：US12189983
申请日：2008-08-12
申请人： Gerhard I. Meijer , Thilo H. C. Stoferle
发明人： Gerhard I. Meijer , Thilo H. C. Stoferle
IPC分类号： G11C11/34 , H01L21/02
CPC分类号： G02F1/011 , G02F1/1523 , G02F1/225 , G02F1/313 , G02F3/022 , G02F2203/15
摘要： A non-volatile programmable electro-optical element alters absorption characteristics of an optical medium that comprises a doped transition metal oxide material including F-centers. The F-centers are electrostatically moved into or out of the regions containing a wavefunction of an optical beam. A specific F-center profile in the transition metal oxide material may be programmed into the optical medium. The F-center profile alters an absorption profile within the optical medium. The spectral range for transmission of electromagnetic radiation in the optical medium may be tailored by the F-centers. Once the absorption profile is set by an electrical signal, the optical element maintains its state even when the electrical signal is turned off. Thus, the programming node may be disconnected from a power supply network, thereby enabling a low power operation of the electro-optical element. The inventive electro-optical element may be employed for both the visible and the infrared wavelength spectrum.
摘要翻译：非易失性可编程电光元件改变包括掺杂的过渡金属氧化物材料（包括F-中心）的光学介质的吸收特性。 F中心被静电地移入或移出包含光束波函数的区域。过渡金属氧化物材料中的特定的F中心分布可以被编程到光学介质中。 F中心轮廓改变光学介质内的吸收曲线。光介质中电磁辐射传输的光谱范围可以由F-中心来定制。一旦通过电信号设置吸收曲线，即使当电信号被关闭时，光学元件也保持其状态。因此，编程节点可以与电源网络断开，从而能够实现电光元件的低功率操作。本发明的电光元件可以用于可见光和红外波长光谱。

6. 发明申请

US20090186443A1 METHOD TO ENHANCE PERFORMANCE OF COMPLEX METAL OXIDE PROGRAMMABLE MEMORY 审中-公开
标题翻译：提高复合金属氧化物可编程存储器性能的方法
公开(公告)号：US20090186443A1
公开(公告)日：2009-07-23
申请号：US12017848
申请日：2008-01-22
申请人： Eric A. Joseph , Chung Hon Lam , Gerhard I. Meijer , Stephen M. Rossnagel , Alejandro Gabriel Schrott
发明人： Eric A. Joseph , Chung Hon Lam , Gerhard I. Meijer , Stephen M. Rossnagel , Alejandro Gabriel Schrott
IPC分类号： H01L21/34
CPC分类号： H01L45/08 , H01L45/1233 , H01L45/1266 , H01L45/1273 , H01L45/147 , H01L45/16
摘要： A method of incorporating oxygen vacancies near an electrode/oxide interface region of a complex metal oxide programmable memory cell which includes forming a first electrode of a metallic material which remains metallic upon oxidation, forming a second electrode facing the first electrode, forming an oxide layer in between the first and second electrodes, applying an electrical signal to the first electrode such that oxygen ions from the oxide layer are embedded in and oxidize the first electrode, and forming oxygen vacancies near the electrode/oxide interface region of the complex metal oxide programmable memory cell.
摘要翻译：一种在复合金属氧化物可编程存储单元的电极/氧化物界面区域附近引入氧空位的方法，其包括在氧化时形成保持金属的金属材料的第一电极，形成面向第一电极的第二电极，形成氧化物层在第一和第二电极之间，向第一电极施加电信号，使得来自氧化物层的氧离子嵌入并氧化第一电极，并在复合金属氧化物可编程的电极/氧化物界面区域附近形成氧空位记忆单元

7. 发明申请

US20080185652A1 Simultaneous Conditioning of a Plurality of Memory Cells Through Series Resistors 有权
标题翻译：通过串联电阻同时调节多个存储单元
公开(公告)号：US20080185652A1
公开(公告)日：2008-08-07
申请号：US12060922
申请日：2008-04-02
申请人： Toshijaru Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger , Chung H. Lam , Gerhard I. Meijer
发明人： Toshijaru Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger , Chung H. Lam , Gerhard I. Meijer
IPC分类号： H01L23/62 , H01L21/8234
CPC分类号： H01L27/0629 , H01L27/101 , H01L27/24
摘要： Disclosed are a semiconductor structure and a method that allow for simultaneous voltage/current conditioning of multiple memory elements in a nonvolatile memory device with multiple memory cells. The structure and method incorporate the use of a resistor connected in series with the memory elements to limit current passing through the memory elements. Specifically, the method and structure incorporate a blanket temporary series resistor on the wafer surface above the memory cells and/or permanent series resistors within the memory cells. During the conditioning process, these resistors protect the transition metal oxide in the individual memory elements from damage (i.e., burn-out), once it has been conditioned.
摘要翻译：公开了一种半导体结构和方法，其允许在具有多个存储器单元的非易失性存储器件中同时对多个存储器元件进行电压/电流调节。该结构和方法结合使用与存储器元件串联连接的电阻器来限制电流通过存储器元件。具体地，该方法和结构在存储器单元上方的晶片表面上和/或存储器单元内的永久串联电阻器上并入一个橡皮布暂时串联电阻器。在调节过程中，一旦调节了这些电阻，这些电阻就可以保护各个存储元件中的过渡金属氧化物免受损坏（即烧坏）。

8. 发明申请

US20080251777A1 Field Effect Device with a Channel with a Switchable Conductivity 审中-公开
标题翻译：具有可切换电导率的通道的场效应器件
公开(公告)号：US20080251777A1
公开(公告)日：2008-10-16
申请号：US12120605
申请日：2008-05-14
申请人： Georg J. Bednorz , David J. Gundlach , Siegfried F. Karg , Gerhard I. Meijer , Heike E. Riel , Walter H. Riess
发明人： Georg J. Bednorz , David J. Gundlach , Siegfried F. Karg , Gerhard I. Meijer , Heike E. Riel , Walter H. Riess
IPC分类号： H01L29/772
CPC分类号： H01L49/003 , G11C11/22 , G11C13/0007 , G11C2213/31 , H01L29/685
摘要： A field effect device includes a source electrode, a drain electrode, a channel formed between the source electrode and the drain electrode, and a gate electrode formed directly on the channel and arranged in a gap between the source electrode and the drain electrode. The channel includes a switching material that is reversibly switchable between a lower conductivity state and a higher conductivity state. The first conductivity state has an electrical conductivity which is lower than an electrical conductivity of the second conductivity state. Each of the conductivity states is persistent without the need for a sustaining excitation signal including an electrical field, heat and/or light applied to the device.
摘要翻译：场效应器件包括源电极，漏电极，形成在源电极和漏电极之间的沟道，以及直接形成在沟道上并布置在源电极和漏电极之间的间隙中的栅电极。该通道包括可在较低电导率状态和较高导电率状态之间可逆切换的开关材料。第一导电状态具有低于第二导电状态的电导率的电导率。导电状态中的每一个都是持续的，而不需要包括施加到器件的电场，热和/或光的维持激励信号。

9. 发明申请

US20080142925A1 PROGRAMMABLE-RESISTANCE MEMORY CELL 有权
标题翻译：可编程电阻存储器单元
公开(公告)号：US20080142925A1
公开(公告)日：2008-06-19
申请号：US11612501
申请日：2006-12-19
申请人： Johannes G. Bednorz , Eric A. Joseph , Siegfried F. Karg , Chung H. Lam , Gerhard I. Meijer , Alejandro G. Schrott
发明人： Johannes G. Bednorz , Eric A. Joseph , Siegfried F. Karg , Chung H. Lam , Gerhard I. Meijer , Alejandro G. Schrott
IPC分类号： H01L29/86 , H01L21/4763
CPC分类号： H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1641 , Y10S438/90
摘要： The present invention relates to a memory cell comprising: a resistive structure; at least two electrodes coupled to the resistive structure, and at least one hydrogen reservoir structure, wherein the application of an electrical signal to one of the at least two electrodes causes the electrical resistance of the resistive structure to be modified by altering a hydrogen-ion concentration in the resistive structure.
摘要翻译：本发明涉及一种存储单元，包括：电阻结构; 耦合到电阻结构的至少两个电极和至少一个氢储存器结构，其中将电信号施加到所述至少两个电极中的一个电极导致通过改变氢离子来修改电阻结构的电阻电阻结构中的浓度。

10. 发明授权

US07580596B1 Non-volatile programmable optical element with absorption coefficient modulation 失效
标题翻译：具有吸收系数调制功能的非易失性可编程光学元件
公开(公告)号：US07580596B1
公开(公告)日：2009-08-25
申请号：US12190138
申请日：2008-08-12
申请人： Gerhard I. Meijer , Thilo H. C. Stöferle
发明人： Gerhard I. Meijer , Thilo H. C. Stöferle
IPC分类号： G02F1/295 , G02F1/035 , G02B6/26
CPC分类号： G02F1/174 , G02B2006/12142 , G02B2006/12164 , G02F1/313 , G02F2203/15
摘要： A non-volatile programmable electro-optical element alters absorption characteristics of an optical medium that comprises a transition metal oxide material by electrostatically moving oxygen vacancies into or out of the regions containing a wavefunction of an optical beam. A specific oxygen vacancy profile in the transition metal oxide material may be programmed into the optical medium. The oxygen vacancy profile alters an absorption profile within the optical medium. Once the absorption profile is set by an electrical signal, the optical element maintains its state even when the electrical signal is turned off. Thus, the programming node may be disconnected from a power supply network, thereby enabling a low power operation of the electro-optical element. Amorphous transition-metal oxides enable integration into back-end-of-line (BEOL) interconnect structures and do not have birefringence. The inventive electro-optical element may be employed for both the visible and the infrared wavelength spectrum.
摘要翻译：非挥发性可编程电光元件通过将氧空位静电移入或流出含有光束波函数的区域来改变包含过渡金属氧化物材料的光学介质的吸收特性。过渡金属氧化物材料中的特定氧空位分布可被编程到光学介质中。氧空位分布改变光学介质内的吸收曲线。一旦通过电信号设置吸收曲线，即使当电信号被关闭时，光学元件也保持其状态。因此，编程节点可以与电源网络断开，从而能够实现电光元件的低功率操作。无定形过渡金属氧化物可以集成到后端（BEOL）互连结构中，并且不具有双折射。本发明的电光元件可以用于可见光和红外波长光谱。

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