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1. 发明授权

US08211846B2 Materials for particle removal by single-phase and two-phase media 有权
标题翻译：用于通过单相和两相介质去除颗粒的材料
公开(公告)号：US08211846B2
公开(公告)日：2012-07-03
申请号：US12131654
申请日：2008-06-02
申请人： David S. L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
发明人： David S. L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
IPC分类号： C11D1/00 , C11D3/26 , C11D3/37
CPC分类号： C11D7/5009 , C11D3/3723 , C11D3/3765 , C11D3/3773 , C11D7/261 , C11D7/3263 , C11D7/34 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： The embodiments of the present invention provide improved materials for cleaning patterned substrates with fine features. The cleaning materials have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials.
摘要翻译：本发明的实施例提供用于清洁具有精细特征的图案化衬底的改进材料。清洁材料在清洁具有精细特征的图案化基材上具有优点，而基本上不损坏特征。清洁材料是流体，液相或液相/气相，并围绕装置特征变形; 因此，清洁材料基本上不会损坏设备特征或将损坏降低在一起。包含具有大分子量的聚合物的聚合物的清洁材料捕获基底上的污染物。此外，清洁材料夹带污染物并且不会将污染物返回到基底表面。一种或多种具有大分子量的聚合物的聚合物形成长的聚合物链，其也可以交联以形成网络（或聚合物网络）。与传统清洁材料相比，长的聚合物链和/或聚合物网络显示出捕获和捕获污染物的优异性能。

2. 发明授权

US08051863B2 Methods of and apparatus for correlating gap value to meniscus stability in processing of a wafer surface by a recipe-controlled meniscus 有权
标题翻译：通过配方控制的弯月面在晶片表面处理中将间隙值与弯液面稳定性相关联的方法和装置
公开(公告)号：US08051863B2
公开(公告)日：2011-11-08
申请号：US12246461
申请日：2008-10-06
申请人： G. Grant Peng , Cristian Paduraru , Katrina Mikhaylich
发明人： G. Grant Peng , Cristian Paduraru , Katrina Mikhaylich
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , H01L21/67034 , Y10S134/902
摘要： Apparatus monitors a meniscus process that is performed on wafers. Monitoring data for a current process received by a processor indicates characteristics of a gap between the wafer and a process head. The processor is configured to respond to the data that is in the form of orientation monitor signals and to respond to a current recipe. The processor generates meniscus monitor signals for allowing the meniscus to remain stable in further meniscus processing. The monitoring is of current meniscus processing to determine whether a current gap (i) is other than a desired gap of the current recipe, and (ii) corresponds to a stable meniscus. If so, a calibration recipe is identified as specifying the current gap. This calibration recipe specifies parameters for meniscus processing the wafer surface with the current gap. The meniscus processing of the wafer surface is continued using the parameters specified by the identified calibration recipe.
摘要翻译：仪器监测在晶片上进行的弯液面过程。由处理器接收的当前处理的监视数据指示晶片和处理头之间的间隙的特征。处理器被配置为响应以定向监视器信号的形式的数据并响应当前配方。处理器产生弯液面监测信号，以允许弯液面在进一步的弯液面处理中保持稳定。监测目前的弯液面处理以确定当前间隙（i）是否不同于当前配方的期望间隙，并且（ii）对应于稳定的弯液面。如果是这样，则校准配方被识别为指定当前间隙。该校准配方规定了具有当前间隙的晶片表面弯月面处理的参数。使用由所标识的校准配方指定的参数继续晶片表面的弯液面处理。

3. 发明申请

US20090151757A1 APPARATUS FOR PARTICLE REMOVAL BY SINGLE-PHASE AND TWO-PHASE MEDIA 有权
标题翻译：用于单相和两相介质去除颗粒的装置
公开(公告)号：US20090151757A1
公开(公告)日：2009-06-18
申请号：US12131667
申请日：2008-06-02
申请人： David S. L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
发明人： David S. L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
IPC分类号： B08B3/04 , C11D17/00
CPC分类号： C11D7/5009 , C11D3/3723 , C11D3/3765 , C11D3/3773 , C11D7/261 , C11D7/3263 , C11D7/34 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： The embodiments of the present invention provide apparatus for cleaning patterned substrates with fine features with cleaning materials. The apparatus using the cleaning materials has advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials.
摘要翻译：本发明的实施例提供了用清洁材料清洁具有精细特征的图案化衬底的设备。使用清洁材料的设备具有清洁具有精细特征的图案化基材而不会显着损害特征的优点。清洁材料是流体，液相或液相/气相，并围绕装置特征变形; 因此，清洁材料基本上不会损坏设备特征或将损坏降低在一起。包含具有大分子量的聚合物的聚合物的清洁材料捕获基底上的污染物。此外，清洁材料夹带污染物并且不会将污染物返回到基底表面。一种或多种具有大分子量的聚合物的聚合物形成长的聚合物链，其也可以交联以形成网络（或聚合物网络）。与传统清洁材料相比，长的聚合物链和/或聚合物网络显示出捕获和捕获污染物的优异性能。

4. 发明申请

US20090151752A1 METHODS FOR PARTICLE REMOVAL BY SINGLE-PHASE AND TWO-PHASE MEDIA 有权
标题翻译：用于单相和两相介质去除颗粒的方法
公开(公告)号：US20090151752A1
公开(公告)日：2009-06-18
申请号：US12131660
申请日：2008-06-02
申请人： David S.L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
发明人： David S.L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
IPC分类号： B08B3/08
CPC分类号： C11D7/5009 , C11D3/3723 , C11D3/3765 , C11D3/3773 , C11D7/261 , C11D7/3263 , C11D7/34 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： The embodiments of the present invention provide methods for cleaning patterned substrates with fine features. The methods for cleaning patterned substrate have advantages in cleaning patterned substrates with fine features without substantially damaging the features by using the cleaning materials described. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials.
摘要翻译：本发明的实施例提供了用于清洁具有精细特征的图案化衬底的方法。用于清洁图案化衬底的方法具有通过使用所述清洁材料来清洁具有精细特征的图案化衬底而不会基本上损坏特征的优点。清洁材料是流体，液相或液相/气相，并围绕装置特征变形; 因此，清洁材料基本上不会损坏设备特征或将损坏降低在一起。包含具有大分子量的聚合物的聚合物的清洁材料捕获基底上的污染物。此外，清洁材料夹带污染物并且不会将污染物返回到基底表面。一种或多种具有大分子量的聚合物的聚合物形成长的聚合物链，其也可以交联以形成网络（或聚合物网络）。与传统清洁材料相比，长的聚合物链和/或聚合物网络显示出捕获和捕获污染物的优异性能。

5. 发明申请

US20120006359A1 METHODS FOR CORRELATING GAP VALUE TO MENISCUS STABILITY IN PROCESSING OF A WAFER SURFACE BY A RECIPE-CONTROLLED MENISCUS 有权
标题翻译：通过受控控制的菜单将水平值与沟道稳定性相关联的方法
公开(公告)号：US20120006359A1
公开(公告)日：2012-01-12
申请号：US13241122
申请日：2011-09-22
申请人： G. Grant Peng , Cristian Paduraru , Katrina Mikhaylich
发明人： G. Grant Peng , Cristian Paduraru , Katrina Mikhaylich
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , H01L21/67034 , Y10S134/902
摘要： Methods for monitoring meniscus processing of a wafer surface to stabilize a meniscus are provided. In one example, the processing is in response to a current recipe that defines a desired gap between the wafer surface and a proximity head. The method includes the operations of monitoring current meniscus processing to determine that a current gap is other than the desired gap, and identifying a calibration recipe that specifies the current gap. The method then continues the meniscus processing of the wafer surface using process parameters specified by the identified calibration recipe.
摘要翻译：提供了用于监测晶片表面的弯月面处理以稳定弯液面的方法。在一个示例中，处理响应于限定晶片表面和邻近头之间的期望间隙的当前配方。该方法包括监视当前弯月面处理以确定当前间隙不是期望间隙的操作，以及识别指定当前间隙的校准配方。然后，该方法使用由所识别的校准配方指定的过程参数来继续晶片表面的弯液面处理。

6. 发明申请

US20100108093A1 ACOUSTIC ASSISTED SINGLE WAFER WET CLEAN FOR SEMICONDUCTOR WAFER PROCESS 有权
标题翻译：用于半导体波形过程的声学辅助单波浪清洁
公开(公告)号：US20100108093A1
公开(公告)日：2010-05-06
申请号：US12262094
申请日：2008-10-30
申请人： Grant Peng , David Mui , Shih-Chung Kon
发明人： Grant Peng , David Mui , Shih-Chung Kon
IPC分类号： B08B3/12
CPC分类号： H01L21/67051
摘要： A method for cleaning a substrate is provided that includes applying a liquid medium to a surface of the substrate such that the liquid medium substantially covers a portion of the substrate that is being cleaned. One or more transducers are used to generate acoustic energy. The generated acoustic energy is applied to the substrate and the liquid medium meniscus such that the applied acoustic energy to the liquid medium prevents cavitation within the liquid medium. The acoustic energy applied to the substrate provides maximum acoustic wave displacement to acoustic waves introduced into the liquid medium. The acoustic energy introduced into the substrate and the liquid medium enables dislodging of the particle contaminant from the surface of the substrate. The dislodged particle contaminants become entrapped within the liquid medium and are carried away from the surface of the substrate by the liquid medium.
摘要翻译：提供一种用于清洁衬底的方法，其包括将液体介质施加到衬底的表面，使得液体介质基本上覆盖正被清洁的衬底的一部分。使用一个或多个换能器来产生声能。产生的声能被施加到衬底和液体介质弯液面，使得向液体介质施加的声能防止液体介质内的气蚀。施加到衬底的声能提供了引入到液体介质中的声波的最大声波位移。引入到基底和液体介质中的声能使得能够从基底表面移除颗粒污染物。脱落的颗粒污染物被捕获在液体介质中，并通过液体介质从基板的表面带走。

7. 发明授权

US08679252B2 Actively heated aluminum baffle component having improved particle performance and methods of use and manufacture thereof 有权
标题翻译：具有改进的颗粒性能的主动加热铝挡板部件及其使用和制造方法
公开(公告)号：US08679252B2
公开(公告)日：2014-03-25
申请号：US11232991
申请日：2005-09-23
申请人： Hong Shih , G. Grant Peng , Daxing Ren
发明人： Hong Shih , G. Grant Peng , Daxing Ren
IPC分类号： C23C16/00 , C23C16/455 , C23C16/50 , H01L21/3065
CPC分类号： H01L21/3065 , C23C16/4401 , C25D11/04 , H01J37/32623 , H01J37/32633 , H01L21/02041 , H01L21/67069
摘要： An actively heated aluminum baffle component such as a thermal control plate or baffle ring of a showerhead electrode assembly of a plasma processing chamber has an exposed outer aluminum oxide layer which is formed by an electropolishing procedure. The exposed outer aluminum oxide layer minimizes defects and particles generated as a result of differential thermal stresses experienced by the aluminum component and outer aluminum oxide layer during plasma processing compared to an identically shaped component having a Type III anodized surface.
摘要翻译：主动加热的铝制挡板部件，例如等离子体处理室的喷头电极组件的热控制板或挡板环，具有通过电抛光工艺形成的暴露的外部氧化铝层。暴露的外部氧化铝层使得与等离子体处理相比，具有III型阳极氧化表面的相同形状的部件相比，由于铝组分和外部氧化铝层在等离子体处理期间经受的差异热应力而产生的缺陷和颗粒最小化。

8. 发明申请

US20100043867A1 Solar and thermal energy to electricity conversion 审中-公开
标题翻译：太阳能和热能转化为电能
公开(公告)号：US20100043867A1
公开(公告)日：2010-02-25
申请号：US12229152
申请日：2008-08-19
申请人： Gang Grant Peng
发明人： Gang Grant Peng
IPC分类号： H01L31/042
CPC分类号： H02N1/08 , F03G6/06 , F24S23/74 , F24S40/80 , H01G5/16 , Y02E10/45 , Y02E10/46
摘要： The present invention discloses a new apparatus and method for converting solar energy or thermal energy to electricity, requiring simple design and production. The present invention will apply the work from the solar or thermal energy to the variable capacitors that convert into electric energy. The output energy from the present invention will be ready for grid connection.
摘要翻译：本发明公开了一种将太阳能或热能转换为电力的新装置和方法，需要简单的设计和生产。本发明将将从太阳能或热能的工作应用于转换为电能的可变电容器。本发明的输出能量将准备好进行电网连接。

9. 发明申请

US20090156452A1 MATERIALS FOR PARTICLE REMOVAL BY SINGLE-PHASE AND TWO-PHASE MEDIA 有权
标题翻译：通过单相和两相介质去除颗粒的材料
公开(公告)号：US20090156452A1
公开(公告)日：2009-06-18
申请号：US12131654
申请日：2008-06-02
申请人： David S.L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
发明人： David S.L. Mui , Satish Srinivasan , Grant Peng , Ji Zhu , Shih-Chung Kon , Dragan Podlesnik , Arjun Mendiratta
IPC分类号： C11D3/37
CPC分类号： C11D7/5009 , C11D3/3723 , C11D3/3765 , C11D3/3773 , C11D7/261 , C11D7/3263 , C11D7/34 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： The embodiments of the present invention provide improved materials for cleaning patterned substrates with fine features. The cleaning materials have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials.
摘要翻译：本发明的实施例提供用于清洁具有精细特征的图案化衬底的改进材料。清洁材料在清洁具有精细特征的图案化基材上具有优点，而基本上不损坏特征。清洁材料是流体，液相或液相/气相，并围绕装置特征变形; 因此，清洁材料基本上不会损坏设备特征或将损坏降低在一起。包含具有大分子量的聚合物的聚合物的清洁材料捕获基底上的污染物。此外，清洁材料夹带污染物并且不会将污染物返回到基底表面。一种或多种具有大分子量的聚合物的聚合物形成长的聚合物链，其也可以交联以形成网络（或聚合物网络）。与传统清洁材料相比，长的聚合物链和/或聚合物网络显示出捕获和捕获污染物的优异性能。

10. 发明申请

US20100055920A1 Apparatus and method for enhancing plasma etch 审中-公开
标题翻译：用于增强等离子体蚀刻的装置和方法
公开(公告)号：US20100055920A1
公开(公告)日：2010-03-04
申请号：US12231446
申请日：2008-09-02
申请人： Gang Grant Peng
发明人： Gang Grant Peng
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32339 , H01J2237/334
摘要： The present invention discloses a new apparatus and method to enhance the plasma etch rate, etch selectivity and etch uniformity. The present invention will apply sonic waves to the work during plasma etch process. The sonic waves will enhance the plasma etch rate. The applied sonic waves can be of a mixture of multiple frequencies at the same time or at a different time. Applying different sonic frequency for etching different material will further amplify the etch selectivity. Sonic waves with multiple frequencies, especially with some lower frequency components, will further improve the etch uniformity over a large area.
摘要翻译：本发明公开了一种增强等离子体蚀刻速率，蚀刻选择性和蚀刻均匀性的新装置和方法。本发明将在等离子体蚀刻工艺期间将声波应用于工作。声波将提高等离子体蚀刻速率。所施加的声波可以在同一时间或不同时间处于多个频率的混合。应用不同的声频来蚀刻不同的材料将进一步放大蚀刻选择性。具有多个频率的声波，特别是具有一些较低频率分量的声波将进一步改善大面积上的蚀刻均匀性。

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