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1. 发明授权

US07396565B2 Multiple precursor cyclical deposition system 失效
标题翻译：多前体循环沉积系统
公开(公告)号：US07396565B2
公开(公告)日：2008-07-08
申请号：US10913888
申请日：2004-08-06
申请人： Michael Xi Yang , Hyungsuk Alexander Yoon , Hui Zhang , Hongbin Fang , Ming Xi
发明人： Michael Xi Yang , Hyungsuk Alexander Yoon , Hui Zhang , Hongbin Fang , Ming Xi
IPC分类号： C23C16/40
CPC分类号： C23C16/45544 , C23C16/45531 , C23C16/45561
摘要： Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy). In one aspect, the composition of the ternary material layer may be tuned by changing the flow ratio of the second precursor to the third precursor between cycles.
摘要翻译：本发明的实施方案涉及利用三种或更多种前体的循环沉积的装置和方法，其中至少两种前体至少部分重叠的衬底结构。在衬底结构上沉积三元材料层的一个实施例包括提供至少一个循环的气体以沉积三元材料层。一个周期包括引入第一前体的脉冲，引入第二前体的脉冲，以及引入第三前体的脉冲，其中第二前体的脉冲和第三前体的脉冲至少部分重叠。在一个方面，三元材料层包括但不限于钨硼硅（W x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x <<）（TaSi x N y），氮化硅（TaSi x N y N y），氮氧化硅（SiO 2） N x Y）和氧化铪氧化铪（HfSi x O y y）。在一个方面，三元材料层的组成可以通过在循环之间改变第二前体与第三前体的流动比来调节。

2. 发明授权

US07384867B2 Formation of composite tungsten films 有权
标题翻译：复合钨膜的形成
公开(公告)号：US07384867B2
公开(公告)日：2008-06-10
申请号：US11206491
申请日：2005-08-18
申请人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
发明人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
IPC分类号： H01L21/44
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.
摘要翻译：提供了沉积钨膜的方法。所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

3. 发明申请

US20070099417A1 Adhesion and minimizing oxidation on electroless CO alloy films for integration with low K inter-metal dielectric and etch stop 审中-公开
标题翻译：粘附和最小化无电解CO合金膜上的氧化，用于与低K金属间电介质和蚀刻停止集成
公开(公告)号：US20070099417A1
公开(公告)日：2007-05-03
申请号：US11329785
申请日：2006-01-10
申请人： Hongbin Fang , Timothy Weidman , Fang Mei , Yaxin Wang , Arulkumar Shanmugasundram , Christopher Bencher , Mehul Naik
发明人： Hongbin Fang , Timothy Weidman , Fang Mei , Yaxin Wang , Arulkumar Shanmugasundram , Christopher Bencher , Mehul Naik
IPC分类号： H01L21/469
CPC分类号： H01L21/76843 , H01L21/76829 , H01L21/76846 , H01L21/76849 , H01L21/76862 , H01L21/76864
摘要： A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.
摘要翻译：一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，减少覆盖层上的氧化物形成，然后沉积电介质材料。一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，将覆盖层暴露于等离子体，将衬底加热到大于约100℃，以及沉积低介电常数材料。

4. 发明申请

US20060040052A1 Methods for depositing tungsten layers employing atomic layer deposition techniques 审中-公开
标题翻译：使用原子层沉积技术沉积钨层的方法
公开(公告)号：US20060040052A1
公开(公告)日：2006-02-23
申请号：US10418728
申请日：2003-04-18
申请人： Hongbin Fang , Hyungsuk Yoon , Ken Lai , Chi Young , Chao-Ming Huang , Ming Xi , Michael Yang , Hua Chung
发明人： Hongbin Fang , Hyungsuk Yoon , Ken Lai , Chi Young , Chao-Ming Huang , Ming Xi , Michael Yang , Hua Chung
IPC分类号： C23C16/00
CPC分类号： C23C16/06 , C23C16/02 , C23C16/0218 , C23C16/0281 , C23C16/045 , C23C16/08 , C23C16/16 , C23C16/45525
摘要： A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a soak. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane, disilane, dichlorosilane and derivatives thereof. A tungsten bulk layer may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.
摘要翻译：提供了在基板表面上形成钨层的方法。在一个方面，该方法包括将衬底表面定位在处理室中并将衬底表面暴露于浸泡。然后通过交替地脉冲选择由硅烷，乙硅烷，二氯硅烷及其衍生物组成的组中的含钨化合物和还原气体，在相同的处理室中的基底表面上沉积成核层。然后可以使用循环沉积，化学气相沉积或物理气相沉积技术在成核层上沉积钨体层。

5. 发明申请

US20050161338A1 Electroless cobalt alloy deposition process 审中-公开
标题翻译：无电钴合金沉积工艺
公开(公告)号：US20050161338A1
公开(公告)日：2005-07-28
申请号：US10970839
申请日：2004-10-21
申请人： Hongbin Fang , Ramin Emami , Timothy Weidman , Arulkumar Shanmugasundram
发明人： Hongbin Fang , Ramin Emami , Timothy Weidman , Arulkumar Shanmugasundram
IPC分类号： C23C18/18 , C23C18/34 , C23C18/50 , C25D5/10 , H01L21/288 , H01L21/768
CPC分类号： H01L21/288 , C23C18/1844 , C23C18/34 , C23C18/50 , H01L21/76849 , H01L21/76874
摘要： In one embodiment, a method for depositing a cobalt-containing capping layer on a metal layer is provided which includes rinsing the metal layer with a deionized water wetting step, depositing a palladium layer on the metal layer by exposing the metal layer to an electroless activation solution comprising a palladium precursor and an acid, and depositing the cobalt-containing capping layer on the palladium layer by exposing the palladium layer to an electroless cobalt-containing solution comprising a cobalt source, a tungsten source, an oxygen scavenger and a surfactant. Ascorbic acid may be used as the oxygen scavenger. In another embodiment, a composition of an electroless plating solution is provided which includes a cobalt source at a concentration in a range from about 50 mM to about 250 mM, a tungsten source at a concentration in a range from about 10 mM to about 100 mM, a complexing agent at a concentration in a range from about 10 mM to about 200 mM, at least one reductant at a concentration in a range from about 1 mM to about 100 mM, a surfactant at a concentration in a range from about 1 mg/L to about 100 mg/L, and ascorbic acid at a concentration in a range from about 30 mg/L to about 300 mg/L.
摘要翻译：在一个实施例中，提供了一种用于在金属层上沉积含钴覆盖层的方法，其包括用去离子水润湿步骤冲洗金属层，通过将金属层暴露于无电激活包含钯前体和酸的溶液，并通过将钯层暴露于包含钴源，钨源，除氧剂和表面活性剂的无电镀钴溶液中，将钯覆盖层沉积在钯层上。可以使用抗坏血酸作为除氧剂。在另一个实施方案中，提供了化学镀溶液的组合物，其包含浓度在约50mM至约250mM范围内的钴源，浓度范围为约10mM至约100mM的钨源浓度范围为约10mM至约200mM的络合剂，至少一种浓度为约1mM至约100mM的还原剂，浓度为约1mg的表面活性剂 L至约100mg / L，抗坏血酸浓度为约30mg / L至约300mg / L。

6. 发明申请

US20050008779A1 Multiple precursor cyclical depositon system 失效
标题翻译：多个前体循环保存系统
公开(公告)号：US20050008779A1
公开(公告)日：2005-01-13
申请号：US10913888
申请日：2004-08-06
申请人： Michael Yang , Hyungsuk Yoon , Hui Zhang , Hongbin Fang , Ming Xi
发明人： Michael Yang , Hyungsuk Yoon , Hui Zhang , Hongbin Fang , Ming Xi
IPC分类号： C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45531 , C23C16/45561
摘要： Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy). In one aspect, the composition of the ternary material layer may be tuned by changing the flow ratio of the second precursor to the third precursor between cycles.
摘要翻译：本发明的实施方案涉及利用三种或更多种前体的循环沉积的装置和方法，其中至少两种前体至少部分重叠的衬底结构。在衬底结构上沉积三元材料层的一个实施例包括提供至少一个循环的气体以沉积三元材料层。一个周期包括引入第一前体的脉冲，引入第二前体的脉冲，以及引入第三前体的脉冲，其中第二前体的脉冲和第三前体的脉冲至少部分重叠。在一个方面，三元材料层包括但不限于钨硼硅（WBxSiy），氮化硅钛（TiSixNy），氮化钽（TaSixNy），氧氮化硅（SiOxNy）和氧化铪铪（HfSixOy）。在一个方面，三元材料层的组成可以通过在循环之间改变第二前体与第三前体的流动比来调节。

7. 发明授权

US06797340B2 Method for depositing refractory metal layers employing sequential deposition techniques 有权
$Method for depositing refractory metal layers employing sequential deposition techniques$
公开(公告)号：US06797340B2
公开(公告)日：2004-09-28
申请号：US10268195
申请日：2002-10-10
申请人： Hongbin Fang , Hyung-Suk A. Yoon , Ken Kaung Lai , Chi Chung Young , James Horng , Ming XI , Michael X. Yang , Hua Chung
发明人： Hongbin Fang , Hyung-Suk A. Yoon , Ken Kaung Lai , Chi Chung Young , James Horng , Ming XI , Michael X. Yang , Hua Chung
IPC分类号： C23C800
CPC分类号： C23C16/06 , C23C16/02 , C23C16/0218 , C23C16/0281 , C23C16/045 , C23C16/08 , C23C16/16 , C23C16/45525
摘要： A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.

8. 发明授权

US08183081B2 Hybrid heterojunction solar cell fabrication using a metal layer mask 失效
标题翻译：使用金属层掩模的混合异质结太阳能电池制造
公开(公告)号：US08183081B2
公开(公告)日：2012-05-22
申请号：US12504193
申请日：2009-07-16
申请人： Timothy W. Weidman , Rohit Mishra , Michael P. Stewart , Yonghwa Chris Cha , Kapila P. Wijekoon , Hongbin Fang
发明人： Timothy W. Weidman , Rohit Mishra , Michael P. Stewart , Yonghwa Chris Cha , Kapila P. Wijekoon , Hongbin Fang
IPC分类号： H01L21/28
CPC分类号： H01L31/022425 , H01L21/67155 , H01L31/0236 , H01L31/1876 , Y02E10/50 , Y02P70/521
摘要： Embodiments of the invention generally provide a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include forming one or more layers on a backside of a solar cell substrate prior to the texturing process to prevent attack of the backside surface of the substrate. In one embodiment, the one or more layers are a metalized backside contact structure that is formed on the backside of the solar cell substrate. In another embodiment, the one or more layers are a chemical resistant dielectric layer that is formed over the backside of the solar cell substrate.
摘要翻译：本发明的实施例通常提供使用新颖的处理顺序来形成太阳能电池装置的高效太阳能电池。在一个实施例中，所述方法包括在纹理化处理之前在太阳能电池基板的背面上形成一层或多层以防止基板背面的侵蚀。在一个实施例中，一个或多个层是形成在太阳能电池基板的背面上的金属化背面接触结构。在另一个实施例中，一个或多个层是形成在太阳能电池基板的背面上的耐化学电介质层。

9. 发明申请

US20100015751A1 HYBRID HETEROJUNCTION SOLAR CELL FABRICATION USING A METAL LAYER MASK 失效
标题翻译：使用金属层掩模的混合异相太阳能电池制造
公开(公告)号：US20100015751A1
公开(公告)日：2010-01-21
申请号：US12504193
申请日：2009-07-16
申请人： Timothy W. Weidman , Rohit Mishra , Michael P. Stewart , Yonghwa Chris Cha , Kapila P. Wijekoon , Hongbin Fang
发明人： Timothy W. Weidman , Rohit Mishra , Michael P. Stewart , Yonghwa Chris Cha , Kapila P. Wijekoon , Hongbin Fang
IPC分类号： H01L21/28 , B05C11/00
CPC分类号： H01L31/022425 , H01L21/67155 , H01L31/0236 , H01L31/1876 , Y02E10/50 , Y02P70/521
摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include the use of various etching and patterning processes that are used to define active regions of the device and regions where the device and/or contact structure is to be located on a surface of a solar cell substrate. The method generally includes the steps of forming one or more layers on a backside of a solar cell substrate to prevent attack of the backside surface of the substrate, and provide a stable supporting surface, when the front side regions of a solar cell are formed. In one embodiment, the one or more layers are a metalized backside contact structure that is formed on the backside of the solar cell substrate. In another embodiment, the one or more layers are a chemical resistant dielectric layer that is formed over the backside of the solar cell substrate.
摘要翻译：本发明的实施例考虑使用新颖的处理顺序形成高效太阳能电池来形成太阳能电池装置。在一个实施例中，所述方法包括使用各种蚀刻和图案化工艺，其用于限定器件的有源区和器件和/或接触结构将位于太阳能电池基板的表面上的区域。该方法通常包括以下步骤：在太阳能电池基板的背面形成一个或多个层，以防止在形成太阳能电池的前侧区域时衬底的背面发生侵蚀，并提供稳定的支撑表面。在一个实施例中，一个或多个层是形成在太阳能电池基板的背面上的金属化的背面接触结构。在另一个实施例中，一个或多个层是形成在太阳能电池基板的背面上的耐化学电介质层。

10. 发明授权

US07256111B2 Pretreatment for electroless deposition 有权
标题翻译：化学沉积预处理
公开(公告)号：US07256111B2
公开(公告)日：2007-08-14
申请号：US10934850
申请日：2004-09-03
申请人： Sergey Lopatin , Arulkumar Shanmugasundram , Ramin Emami , Hongbin Fang
发明人： Sergey Lopatin , Arulkumar Shanmugasundram , Ramin Emami , Hongbin Fang
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L21/02074 , H01L21/288 , H01L21/67161 , H01L21/6723 , H01L21/76849 , H01L21/76862 , H01L21/76864
摘要： Embodiments of the present invention relate to an apparatus and method of annealing substrates in a thermal anneal chamber and/or a plasma anneal chamber before electroless deposition thereover. In one embodiment, annealing in a thermal anneal chamber includes heating the substrate in a vacuum environment while providing a gas, such as noble gases, hydrogen gas, other reducing gases, nitrogen gas, other non-reactive gases, and combinations thereof. In another embodiment, annealing in a plasma chamber comprises plasma annealing the substrate in a plasma, such as a plasma from an argon gas, helium gas, hydrogen gas, and combinations thereof.
摘要翻译：本发明的实施例涉及在其之前的无电沉积之前在热退火室和/或等离子体退火室中退火衬底的装置和方法。在一个实施例中，热退火室中的退火包括在真空环境中加热衬底，同时提供气体，例如惰性气体，氢气，其它还原气体，氮气，其它非反应性气体及其组合。在另一个实施例中，等离子体室中的退火包括等离子体等离子体等离子体退火，例如来自氩气，氦气，氢气及其组合的等离子体。

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