会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Chemical mechanical polishing method using double polishing stop layer
    • 化学机械抛光方法采用双抛光停止层
    • US06248667B1
    • 2001-06-19
    • US09527458
    • 2000-03-17
    • Jung-yup KimChang-ki Hong
    • Jung-yup KimChang-ki Hong
    • H01L21302
    • H01L21/31053H01L21/318H01L21/3185Y10S438/959
    • A chemical mechanical polishing (CMP) method using a double polishing stopper by which it is possible to prevent a dishing phenomenon and a variation in the thickness of a polishing stopper, including the steps of stacking polishing stoppers to form the double polishing stopper on a semiconductor substrate, forming a trench, stacking an isolation layer, performing a first CMP process using a second polishing stopper, removing the second polishing stopper, and performing a second CMP process using a first polishing stopper. It is possible to remove the second polishing stopper by additionally interposing an etching stopper between the polishing stoppers which form the double polishing stopper.
    • 一种使用双重抛光止动器的化学机械抛光(CMP)方法,其可以防止抛光停止的凹陷现象和厚度的变化,包括堆叠抛光阻挡件以在半导体上形成双重抛光阻挡件的步骤 衬底,形成沟槽,堆叠隔离层,使用第二抛光止挡件执行第一CMP处理,去除第二抛光阻挡件,以及使用第一抛光停止件进行第二CMP处理。 通过在形成双重抛光止动件的抛光止动器之间附加插入蚀刻止动件可以移除第二抛光止动件。
    • 7. 发明授权
    • Method and apparatus for supplying chemical-mechanical polishing slurries
    • 用于提供化学机械抛光浆料的方法和设备
    • US06585570B2
    • 2003-07-01
    • US09848371
    • 2001-05-03
    • Jung-yup KimYoung-rae ParkSang-rok Hah
    • Jung-yup KimYoung-rae ParkSang-rok Hah
    • B24B1900
    • B24B37/04B24B1/04B24B57/02
    • In method and apparatus for supplying a slurry for a chemical mechanical polishing (CMP) process, a slurry pre-treatment is provided for minimizing the size of abrasive particles in the slurry. In the slurry supplying method, after applying acoustic energy to the slurry to de-agglomerate agglomerated abrasive particles within the slurry, any remaining oversized abrasive particles having a diameter greater than a reference size are filtered out from the slurry. The acoustic energy application step and the filtering step are repeatedly performed for a predetermined time period while circulating the slurry. The slurry supplying apparatus includes a tank for holding a slurry, acoustic energy sources for applying acoustic energy to the slurry held within the tank, a slurry circulating line for circulating the slurry drawn out of the tank, which is connected to the tank, a filter for filtering out abrasive particle clumps having a diameter greater than a reference size from the slurry, which is disposed in the slurry circulating line, and a slurry supplying line for supplying the slurry from the slurry circulating line to a CMP equipment.
    • 在用于供应用于化学机械抛光(CMP)工艺的浆料的方法和设备中,提供了浆料预处理以使浆料中磨料颗粒的尺寸最小化。 在浆料供给方法中,在向浆料中施加声能以使浆料中的附聚磨料颗粒去聚集之前,将任何剩余的具有大于参考尺寸的直径的过大的磨料颗粒从浆料中过滤掉。 声音能量施加步骤和过滤步骤在循环淤浆期间重复进行预定时间段。 浆料供给装置包括用于保持浆料的罐,用于向保持在罐内的浆料提供声能的声能源,用于使从罐中抽出的浆料循环的浆料循环管线,其与罐连接,过滤器 用于从布置在浆料循环管线中的浆料中过滤出具有大于参考尺寸的直径的磨料颗粒团,以及用于将浆料从淤浆循环管线供应到CMP设备的浆料供应管线。