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    • 1. 发明授权
    • High brightness LED utilizing a roughened active layer and conformal cladding
    • 高亮度LED利用粗糙的有源层和保形包层
    • US08232568B2
    • 2012-07-31
    • US12545358
    • 2009-08-21
    • Ling ZhangSteven D. LesterJeffrey C. Ramer
    • Ling ZhangSteven D. LesterJeffrey C. Ramer
    • H01L33/00
    • H01L33/24H01L33/007
    • A light emitting device and method for making the same are disclosed. The device includes an active layer disposed between first and second layers. The first layer has top and bottom surfaces. The top surface includes a first material of a first conductivity type, including a plurality of pits in the substantially planar surface. The active layer overlies the top surface of the first layer and conforms to the top surface, the active layer generating light characterized by a wavelength when holes and electrons recombine therein. The second layer includes a second material of a second conductivity type, the second layer overlying the active layer and conforming to the active layer. The device can be constructed on a substrate having a lattice constant sufficiently different from that of the first material to give rise to dislocations in the first layer that are used to form the pits.
    • 公开了一种发光器件及其制造方法。 该装置包括设置在第一和第二层之间的有源层。 第一层具有顶部和底部表面。 顶表面包括第一导电类型的第一材料,其包括在基本上平坦的表面中的多个凹坑。 有源层覆盖第一层的顶表面并且与顶表面相符,有源层产生以空穴和电子在其中复合的波长为特征的光。 第二层包括第二导电类型的第二材料,第二层覆盖有源层并且符合有源层。 该器件可以构建在具有与第一材料的晶格常数充分不同的晶格常数的衬底上,以产生用于形成凹坑的第一层中的位错。
    • 5. 发明申请
    • High Brightness LED Utilizing a Roughened Active Layer and Conformal Cladding
    • 高亮度LED利用粗化的有源层和保形包层
    • US20100133562A1
    • 2010-06-03
    • US12545358
    • 2009-08-21
    • Ling ZhangSteven D. LesterJeffrey C. Ramer
    • Ling ZhangSteven D. LesterJeffrey C. Ramer
    • H01L33/00H01L21/302
    • H01L33/24H01L33/007
    • A light emitting device and method for making the same are disclosed. The device includes an active layer disposed between first and second layers. The first layer has top and bottom surfaces. The top surface includes a first material of a first conductivity type, including a plurality of pits in the substantially planar surface. The active layer overlies the top surface of the first layer and conforms to the top surface, the active layer generating light characterized by a wavelength when holes and electrons recombine therein. The second layer includes a second material of a second conductivity type, the second layer overlying the active layer and conforming to the active layer. The device can be constructed on a substrate having a lattice constant sufficiently different from that of the first material to give rise to dislocations in the first layer that are used to form the pits.
    • 公开了一种发光器件及其制造方法。 该装置包括设置在第一和第二层之间的有源层。 第一层具有顶部和底部表面。 顶表面包括第一导电类型的第一材料,其包括在基本上平坦的表面中的多个凹坑。 有源层覆盖第一层的顶表面并且与顶表面相符,有源层产生以空穴和电子在其中复合的波长为特征的光。 第二层包括第二导电类型的第二材料,第二层覆盖有源层并且符合有源层。 该器件可以构建在具有与第一材料的晶格常数充分不同的晶格常数的衬底上,以产生用于形成凹坑的第一层中的位错。
    • 7. 发明授权
    • Method and apparatus for measuring the temperature of objects on a fast moving holder
    • 用于测量快速移动支架上物体温度的方法和装置
    • US06349270B1
    • 2002-02-19
    • US09321356
    • 1999-05-27
    • Alexander GuraryVadim BoguslavskiyAmeesh N. PatelJeffrey C. Ramer
    • Alexander GuraryVadim BoguslavskiyAmeesh N. PatelJeffrey C. Ramer
    • G01K1130
    • G01J5/0022G05D23/1917G05D23/26
    • Apparatus and method for determining a real time, non-contact temperature measurement of semiconductor wafers is provided in a computer-based data gathering system. The apparatus includes a moving carrier containing semiconductor wafers and a pyrometer and a reflectometer positioned above the spinning wafer carrier for providing temperature and reflectivity data samples taken from the semiconductor wafers and spinning carrier. The data are then provided to an attached computer. The attached computer receives the reflectivity and temperature data pairs, stores them in a data table and records the frequency of occurrence of each of the reflectivity values in the series of reflectivity and temperature data. Software operating on the computer has instructions for identifying at least one reflectivity data peak representative of the reflectivity characteristics of the semiconductor wafers and instructions for determining the temperature of the semiconductor wafers based upon the frequency of occurrence of the reflectivity data and the associated reflectivity-temperature data.
    • 在基于计算机的数据采集系统中提供了用于确定半导体晶片的实时非接触温度测量的装置和方法。 该装置包括含有半导体晶片的移动载体和位于旋转晶片载体上方的高温计和反射计,用于提供从半导体晶片和纺丝载体获取的温度和反射率数据样本。 然后将数据提供给附接的计算机。 连接的计算机接收反射率和温度数据对,将它们存储在数据表中,并将每个反射率值的出现频率记录在一系列反射率和温度数据中。 在计算机上操作的软件具有用于识别表示半导体晶片的反射率特性的至少一个反射率数据峰值的指令以及基于反射率数据的发生频率和相关联的反射率温度来确定半导体晶片的温度的指令 数据。