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1. 发明授权

US08268659B2 Edge-emitting semiconductor laser chip 有权
标题翻译：边缘发射半导体激光芯片
公开(公告)号：US08268659B2
公开(公告)日：2012-09-18
申请号：US13011326
申请日：2011-01-21
申请人： Christoph Eichler , Volker Härle , Christian Rumbolz , Uwe Strauss
发明人： Christoph Eichler , Volker Härle , Christian Rumbolz , Uwe Strauss
IPC分类号： H01L21/00
CPC分类号： H01S5/0217 , H01S5/0216 , H01S5/2214 , H01S5/2232 , H01S5/3211 , H01S5/32341 , H01S2301/173
摘要： A method for manufacturing an edge emitting semiconductor laser chip, which has a carrier substrate, an interlayer arranged between the carrier substrate and a component structure of the edge emitting semiconductor laser chip. The interlayer is adapted to provide adhesion between the carrier substrate and the component structure. The component structure has an active zone provided for generating radiation.
摘要翻译：一种用于制造边缘发射半导体激光器芯片的方法，其具有载体衬底，布置在载体衬底和边缘发射半导体激光器芯片的部件结构之间的层间隔。中间层适于提供载体基底和部件结构之间的粘附。组件结构具有用于产生辐射的活动区域。

2. 发明授权

US08175128B2 Semiconductor laser element and semiconductor laser device 失效
标题翻译：半导体激光元件和半导体激光器件
公开(公告)号：US08175128B2
公开(公告)日：2012-05-08
申请号：US12657451
申请日：2010-01-21
申请人： Daisuke Imanishi
发明人： Daisuke Imanishi
IPC分类号： H01S5/00
CPC分类号： H01S5/2232 , B82Y20/00 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/18311 , H01S5/18327 , H01S5/18341 , H01S5/22 , H01S5/34326 , H01S5/4031
摘要： A semiconductor laser element is provided which includes a first semiconductor layer, an active layer having a current injection region, a second semiconductor layer, a third semiconductor layer, and an electrode for injecting a current into the active layer. In the semiconductor laser element, the first semiconductor layer, the active layer, the second semiconductor layer, and the third semiconductor layer are laminated in that order on a substrate, the first semiconductor layer has a current constriction layer which constricts the current injection region of the active layer, the third semiconductor layer is formed on an upper surface of the second semiconductor layer in a region corresponding to the current injection region of the active layer, and the electrode is formed on the upper surface of the second semiconductor layer in a region other than that of the third semiconductor layer.
摘要翻译：提供一种半导体激光元件，其包括第一半导体层，具有电流注入区的有源层，第二半导体层，第三半导体层以及用于向有源层注入电流的电极。在半导体激光元件中，第一半导体层，有源层，第二半导体层和第三半导体层依次层叠在基板上，第一半导体层具有限制电流注入区域的电流收缩层有源层，第三半导体层在与有源层的电流注入区对应的区域中形成在第二半导体层的上表面上，并且电极形成在第二半导体层的上表面的区域除了第三半导体层的以外。

3. 发明申请

US20100183041A1 Semiconductor laser element and semiconductor laser device 失效
标题翻译：半导体激光元件和半导体激光器件
公开(公告)号：US20100183041A1
公开(公告)日：2010-07-22
申请号：US12657451
申请日：2010-01-21
申请人： Daisuke Imanishi
发明人： Daisuke Imanishi
IPC分类号： H01S5/32 , H01S5/125
CPC分类号： H01S5/2232 , B82Y20/00 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/18311 , H01S5/18327 , H01S5/18341 , H01S5/22 , H01S5/34326 , H01S5/4031
摘要： A semiconductor laser element is provided which includes a first semiconductor layer, an active layer having a current injection region, a second semiconductor layer, a third semiconductor layer, and an electrode for injecting a current into the active layer. In the semiconductor laser element, the first semiconductor layer, the active layer, the second semiconductor layer, and the third semiconductor layer are laminated in that order on a substrate, the first semiconductor layer has a current constriction layer which constricts the current injection region of the active layer, the third semiconductor layer is formed on an upper surface of the second semiconductor layer in a region corresponding to the current injection region of the active layer, and the electrode is formed on the upper surface of the second semiconductor layer in a region other than that of the third semiconductor layer.
摘要翻译：提供一种半导体激光元件，其包括第一半导体层，具有电流注入区的有源层，第二半导体层，第三半导体层以及用于向有源层注入电流的电极。在半导体激光元件中，第一半导体层，有源层，第二半导体层和第三半导体层依次层叠在基板上，第一半导体层具有限制电流注入区域的电流收缩层有源层，第三半导体层在与有源层的电流注入区对应的区域中形成在第二半导体层的上表面上，并且电极形成在第二半导体层的上表面的区域除了第三半导体层的以外。

4. 发明授权

US07715458B2 Semiconductor optical devices, systems and methods of manufacturing the same 有权
标题翻译：半导体光学器件，系统及其制造方法
公开(公告)号：US07715458B2
公开(公告)日：2010-05-11
申请号：US11980424
申请日：2007-10-31
申请人： Jun-youn Kim , Kyoung-ho Ha , Soo-haeng Cho
发明人： Jun-youn Kim , Kyoung-ho Ha , Soo-haeng Cho
IPC分类号： H01S5/20 , H01L31/00 , H01L21/00
CPC分类号： H01S5/2232 , B82Y20/00 , H01S5/021 , H01S5/0218 , H01S5/0265 , H01S5/0425 , H01S5/12 , H01S5/124 , H01S5/2004 , H01S5/3434 , H01S5/4087
摘要： A semiconductor optical device includes a silicon substrate and a Group III-V semiconductor gain layer. The Group III-V semiconductor gain layer is formed on the silicon substrate. The silicon substrate or the Group III-V semiconductor gain layer has a dispersion Bragg grating formed therein. In a method of manufacturing a semiconductor optical device, a Group III-V semiconductor gain layer is formed on a silicon substrate. A dispersion Bragg grating is formed on the silicon substrate or the Group III-V semiconductor gain layer.
摘要翻译：半导体光学器件包括硅衬底和III-V族III族半导体增益层。在硅衬底上形成III-V族半导体增益层。硅衬底或III-V族半导体增益层在其中形成色散的布拉格光栅。在制造半导体光学器件的方法中，在硅衬底上形成III-V族半导体增益层。在硅衬底或III-V族半导体增益层上形成分散布拉格光栅。

5. 发明授权

US07368766B2 Semiconductor light emitting element and method for fabricating the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US07368766B2
公开(公告)日：2008-05-06
申请号：US10891968
申请日：2004-07-15
申请人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
发明人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
IPC分类号： H01L31/072
CPC分类号： B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/02272 , H01S5/2068 , H01S5/2201 , H01S5/2232 , H01S5/2237 , H01S5/24 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32308 , H01S5/32341 , H01S5/3403 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12 , Y10S257/918 , Y10T428/12528
摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
摘要翻译：本发明的半导体激光器包括在c轴方向上形成的有源层，其中有源层由六方晶系化合物半导体制成，并且在有源层的c平面内产生各向异性应变。

6. 发明申请

US20080049801A1 Edge-emitting semiconductor laser chip 有权
标题翻译：边缘发射半导体激光芯片
公开(公告)号：US20080049801A1
公开(公告)日：2008-02-28
申请号：US11824877
申请日：2007-07-02
申请人： Christoph Eichler , Volker Harle , Christian Rumbolz , Uwe Strauss
发明人： Christoph Eichler , Volker Harle , Christian Rumbolz , Uwe Strauss
IPC分类号： H01S5/00
CPC分类号： H01S5/0217 , H01S5/0216 , H01S5/2214 , H01S5/2232 , H01S5/3211 , H01S5/32341 , H01S2301/173
摘要： What is specified is an edge emitting semiconductor laser chip comprising a carrier substrate (1), an interlayer (2) promoting adhesion between the carrier substrate (1) and a component structure (50) of the edge emitting semiconductor laser chip, and the component structure (50) comprising an active zone (5) provided for generating radiation.
摘要翻译：指定的是边缘发射半导体激光器芯片，其包括载体衬底（1），促进载体衬底（1）和边缘发射半导体激光器芯片的部件结构（50）之间的粘合的中间层（2）结构（50）包括用于产生辐射的活动区（5）。

7. 发明申请

US20060078023A1 Laser diode and method of fabricating the same 审中-公开
标题翻译：激光二极管及其制造方法
公开(公告)号：US20060078023A1
公开(公告)日：2006-04-13
申请号：US11128313
申请日：2005-05-13
申请人： Dae-ho Lim
发明人： Dae-ho Lim
IPC分类号： H01S5/20
CPC分类号： H01S5/2232 , H01S5/0655 , H01S5/2215 , H01S5/32325
摘要： A laser diode and a method of fabricating the same are provided. An embodiment of the laser includes a substrate; at least one material layer formed on the substrate and having a current passing region and a current block region which is composed of oxide and disposed at both sides of the current passing region; and a laser oscillating layer formed on the material layer.
摘要翻译：提供了一种激光二极管及其制造方法。激光器的实施例包括基板; 形成在所述基板上的至少一个材料层，具有电流通过区域和由氧化物构成并设置在电流通过区域两侧的电流阻挡区域; 以及形成在材料层上的激光振荡层。

8. 发明申请

US20050042788A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050042788A1
公开(公告)日：2005-02-24
申请号：US10945899
申请日：2004-09-22
申请人： Tetsuzo Ueda
发明人： Tetsuzo Ueda
IPC分类号： H01L21/00 , H01L21/20 , H01L21/76 , H01L27/01 , H01L33/06 , H01L33/32 , H01L33/36 , H01L33/44 , H01S5/02 , H01S5/024 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/323 , H01S5/343
CPC分类号： H01L21/0237 , H01L21/02532 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/7605 , H01L33/145 , H01S5/0213 , H01S5/0215 , H01S5/0217 , H01S5/0425 , H01S5/2214 , H01S5/2215 , H01S5/2231 , H01S5/2232 , H01S5/227 , H01S5/32341 , H01S2304/04 , H01S2304/12
摘要： A light emitting layer made of a group III-V nitride semiconductor is formed between a first semiconductor layer made of an n-type group III-V nitride semiconductor and a second semiconductor layer made of a p-type group III-V nitride semiconductor. In side portions of the second semiconductor layer, oxidized regions are formed through the oxidization of the second semiconductor layer itself so as to be spaced apart from each other in the direction parallel to the plane of the light emitting layer. A p-side electrode is formed across the entire upper surface of the second semiconductor layer including the oxidized regions, and an n-side electrode is formed on one surface of the first semiconductor layer that is away from the second semiconductor layer.
摘要翻译：在由n型III-V族氮化物半导体制成的第一半导体层和由p型III-V族氮化物半导体制成的第二半导体层之间形成由III-V族氮化物半导体制成的发光层。在第二半导体层的侧面部分中，通过第二半导体层本身的氧化，在平行于发光层的平面的方向彼此间隔开来形成氧化区域。在包括氧化区域的第二半导体层的整个上表面上形成p侧电极，并且在第一半导体层的远离第二半导体层的一个表面上形成n侧电极。

9. 发明申请

US20040105475A1 Semiconductor laser device including cladding layer having stripe portion different in conductivity type from adjacent portions 失效
标题翻译：半导体激光装置，其包括具有与相邻部分不同导电类型的条纹部分的包层
公开(公告)号：US20040105475A1
公开(公告)日：2004-06-03
申请号：US10716221
申请日：2003-11-17
申请人： SHARP KABUSHIKI KAISHA
发明人： Syuzo Ohbuchi
IPC分类号： H01S005/00
CPC分类号： H01S5/2232 , H01S5/2059 , H01S5/2231 , H01S5/3211
摘要： A semiconductor laser device has a pair of cladding layers with an active layer interposed therebetween. At least one of the cladding layers is of the same composition through the entire region of the cladding layer, excluding a dopant in the cladding layer, and has a stripe portion different in conductivity type from adjacent portions.
摘要翻译：一种半导体激光器件具有一对其中夹有有源层的包覆层。包覆层中的至少一个在包层的整个区域中具有相同的组成，不包括包覆层中的掺杂剂，并且具有与相邻部分不同的导电类型的条纹部分。

10. 发明授权

US06420198B1 Gallium nitride based compound semiconductor laser and method of forming the same 有权
标题翻译：氮化镓基化合物半导体激光器及其形成方法
公开(公告)号：US06420198B1
公开(公告)日：2002-07-16
申请号：US09718432
申请日：2000-11-24
申请人： Akitaka Kimura , Masaaki Nido
发明人： Akitaka Kimura , Masaaki Nido
IPC分类号： H01L2100
CPC分类号： H01S5/2232 , H01L33/007 , H01L33/145 , H01S5/2206 , H01S5/2231 , H01S5/2237 , H01S5/32341
摘要： A semiconductor device and method of forming a current block layer structure includes the steps of providing dielectric stripe masks defining at least a stripe-shaped opening on a surface of a compound semiconductor region having a hexagonal crystal structure, and selectively growing at least a current block layer of a compound semiconductor having the hexagonal crystal structure on the surface of the compound semiconductor region by use of the dielectric stripe masks.
摘要翻译：形成电流阻挡层结构的半导体器件和方法包括以下步骤：在具有六方晶体结构的化合物半导体区域的表面上提供限定至少条形开口的电介质条掩膜，并且至少选择性地生长至少一个当前块通过使用电介质条纹掩模在化合物半导体区域的表面上具有六方晶系结构的化合物半导体层。

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