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1. 发明授权

US09887217B2 Pixels of image sensors, image sensors including the pixels, and image processing systems including the image sensors 有权
公开(公告)号：US09887217B2
公开(公告)日：2018-02-06
申请号：US14856618
申请日：2015-09-17
申请人： Jung Chak Ahn , Seung Joo Nah , Kyung Ho Lee , Young Woo Jung
发明人： Jung Chak Ahn , Seung Joo Nah , Kyung Ho Lee , Young Woo Jung
IPC分类号： H01L27/00 , H01L27/146 , H04N5/353 , H04N5/355 , H04N5/359 , H04N5/3745
CPC分类号： H01L27/14612 , H01L27/14614 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14638 , H01L27/1464 , H01L27/14645 , H04N5/353 , H04N5/3559 , H04N5/3592 , H04N5/37452
摘要： Pixels of image sensors are provided. The pixels may include a photo diode configured to accumulate photocharges generated therein corresponding to incident light during a first period, a storage diode configured to store photocharges accumulated in the photo diode and a storage gate configured to control transfer of the photocharges accumulated in the photo diode to the storage diode. The storage gate may include a vertical gate structure extending toward the photo diode.

2. 发明申请

US20160111461A1 Pixels Of Image Sensors, Image Sensors Including The Pixels, And Image Processing Systems Including The Image Sensors 有权
标题翻译：图像传感器的像素，包括像素的图像传感器和包括图像传感器的图像处理系统
公开(公告)号：US20160111461A1
公开(公告)日：2016-04-21
申请号：US14856618
申请日：2015-09-17
申请人： Jung Chak Ahn , Seung Joo NAH , Kyung Ho LEE , Young Woo JUNG
发明人： Jung Chak Ahn , Seung Joo NAH , Kyung Ho LEE , Young Woo JUNG
IPC分类号： H01L27/146 , H04N5/378
CPC分类号： H01L27/14612 , H01L27/14614 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14638 , H01L27/1464 , H01L27/14645 , H04N5/353 , H04N5/3559 , H04N5/3592 , H04N5/37452
摘要： Pixels of image sensors are provided. The pixels may include a photo diode configured to accumulate photocharges generated therein corresponding to incident light during a first period, a storage diode configured to store photocharges accumulated in the photo diode and a storage gate configured to control transfer of the photocharges accumulated in the photo diode to the storage diode. The storage gate may include a vertical gate structure extending toward the photo diode.
摘要翻译：提供图像传感器的像素。像素可以包括光电二极管，其被配置为在第一周期期间累积对应于入射光产生的光电荷，存储二极管，其被配置为存储累积在光电二极管中的光电荷，以及存储栅极，其被配置为控制累积在光电二极管中的光电荷的转移到存储二极管。存储栅极可以包括朝向光电二极管延伸的垂直栅极结构。

3. 发明授权

US08953073B2 Image sensor configured to regulate a quantity of light absorbed thereby, electronic device including the same, and image sensing method 有权
标题翻译：图像传感器被配置为调节由此吸收的光量，包括其的电子设备和图像感测方法
公开(公告)号：US08953073B2
公开(公告)日：2015-02-10
申请号：US13618076
申请日：2012-09-14
申请人： Sang Chul Sul , Hirosige Goto , Kyung Ho Lee
发明人： Sang Chul Sul , Hirosige Goto , Kyung Ho Lee
IPC分类号： H04N3/14 , H04N5/335 , H04N5/359 , H01L27/30 , H04N5/3745
CPC分类号： H04N5/3745 , H01L27/307 , H04N5/3591 , H04N5/378
摘要： An image sensor and an image sensing method are provided. The image sensor includes a semiconductor substrate; a photoelectric converter comprising a bias unit, which comprises a first electrode and a second electrode, and an organic photoelectric conversion layer, which selectively absorbs light and converts the light into electrons; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store electrons; a read-out unit to converts charge transferred from the storage node into an image signal; a pixel array comprising a plurality of pixels, each of which comprises an intermediate insulating layer; and an output circuit configured to read out the image signal from the pixel array. The quantity of light received by the organic photoelectric conversion layer is adjusted by a bias change of the bias unit.
摘要翻译：提供了图像传感器和图像感测方法。图像传感器包括半导体衬底; 光电转换器包括偏置单元，其包括第一电极和第二电极，以及有机光电转换层，其选择性地吸收光并将光转换成电子; 与所述第二电极接触以将所述光电转换器与所述半导体衬底连接的通孔; 被配置为存储电子的存储节点; 读出单元，用于将从存储节点传送的电荷转换为图像信号; 包括多个像素的像素阵列，每个像素包括中间绝缘层; 以及输出电路，被配置为从像素阵列读出图像信号。由有机光电转换层接收的光量由偏置单元的偏置变化来调节。

4. 发明授权

US08947332B2 Liquid crystal display device having an electrostatic discharge protection circuit 有权
标题翻译：具有静电放电保护电路的液晶显示装置
公开(公告)号：US08947332B2
公开(公告)日：2015-02-03
申请号：US12005618
申请日：2007-12-28
申请人： Woong Sik Kim , Do Young Lee , Kyung Ho Lee , Bum Sik Kim
发明人： Woong Sik Kim , Do Young Lee , Kyung Ho Lee , Bum Sik Kim
IPC分类号： G09G3/36 , G02F1/1362
CPC分类号： G02F1/136204
摘要： A liquid crystal display device comprises a liquid crystal display panel having liquid crystal cells which are defined by a gate line and a data line and which are arranged in a matrix type, an electrostatic discharge protection circuit mounted on the liquid crystal display panel and connected to any one of the gate line and the data line, a first voltage supply line supplying the same voltage as a first gate voltage with which the gate line is supplied to the electrostatic discharge protection circuit, and a second voltage supply line supplying the same voltage as a second gate voltage with which the gate line is supplied to the electrostatic discharge protection circuit.
摘要翻译：液晶显示装置包括液晶显示面板，液晶显示面板具有由栅极线和数据线限定的液晶单元，并且以矩阵型布置，安装在液晶显示面板上的静电放电保护电路，栅极线和数据线中的任一个，提供与栅极线提供给静电放电保护电路的第一栅极电压相同的电压的第一电压电源线和提供与静电放电保护电路相同的电压的第二电压供应线第二栅极电压，栅极线被提供给静电放电保护电路。

5. 发明授权

US08575702B2 Semiconductor device and method for fabricating semiconductor device 有权
公开(公告)号：US08575702B2
公开(公告)日：2013-11-05
申请号：US12882826
申请日：2010-09-15
申请人： Jae-Han Cha , Kyung-Ho Lee , Sun-Goo Kim , Hyung-Suk Choi , Ju-Ho Kim , Jin-Young Chae , In-Taek Oh
发明人： Jae-Han Cha , Kyung-Ho Lee , Sun-Goo Kim , Hyung-Suk Choi , Ju-Ho Kim , Jin-Young Chae , In-Taek Oh
IPC分类号： H01L21/70
CPC分类号： H01L29/66681 , H01L21/823412 , H01L21/823462 , H01L21/823493 , H01L27/088 , H01L29/0653 , H01L29/0692 , H01L29/0847 , H01L29/1045 , H01L29/1087 , H01L29/66659 , H01L29/7835
摘要： A semiconductor device includes: an active region configured over a substrate to include a first conductive-type first deep well and second conductive-type second deep well forming a junction therebetween. A gate electrode extends across the junction and over a portion of first conductive-type first deep well and a portion of the second conductive-type second deep well. A second conductive-type source region is in the first conductive-type first deep well at one side of the gate electrode whereas a second conductive-type drain region is in the second conductive-type second deep well on another side of the gate electrode. A first conductive-type impurity region is in the first conductive-type first deep well surrounding the second conductive-type source region and extending toward the junction so as to partially overlap with the gate electrode and/or partially overlap with the second conductive-type source region.

6. 发明授权

US08563914B2 Unit pixels including boosting capacitors, pixel arrays including the unit pixels and photodetecting devices including the pixel arrays 有权
标题翻译：单位像素包括升压电容器，包括单位像素的像素阵列和包括像素阵列的光检测装置
公开(公告)号：US08563914B2
公开(公告)日：2013-10-22
申请号：US12801196
申请日：2010-05-27
申请人： Jung-chak Ahn , Kyung-ho Lee , Shay Hamami , Young-hwan Park
发明人： Jung-chak Ahn , Kyung-ho Lee , Shay Hamami , Young-hwan Park
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H04N5/3597 , H04N5/363 , H04N5/37452
摘要： A unit pixel capable of achieving full initialization of a floating diffusion area, a pixel array including the unit pixel, and a photodetecting device including the pixel array. The unit pixel includes a photodetector, a transmission transistor for transmitting charges generated from the photodetector to a floating diffusion area, a reset transistor for initializing the floating diffusion area, and a boosting capacitor having a first terminal connected to the floating diffusion area and a second terminal to which a boosting voltage is applied.
摘要翻译：能够实现浮动扩散区域的完全初始化的单位像素，包括单位像素的像素阵列，以及包括该像素阵列的受光器件。单位像素包括光电检测器，用于将从光电检测器产生的电荷传输到浮动扩散区域的传输晶体管，用于初始化浮动扩散区域的复位晶体管，以及具有连接到浮动扩散区域的第一端子的升压电容器，端子，施加升压电压。

7. 发明授权

US08552497B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08552497B2
公开(公告)日：2013-10-08
申请号：US13290535
申请日：2011-11-07
申请人： Jae-Han Cha , Kyung-Ho Lee , Sun-Goo Kim , Hyung-Suk Choi , Ju-Ho Kim , Jin-Young Chae , In-Taek Oh
发明人： Jae-Han Cha , Kyung-Ho Lee , Sun-Goo Kim , Hyung-Suk Choi , Ju-Ho Kim , Jin-Young Chae , In-Taek Oh
IPC分类号： H01L29/66
CPC分类号： H01L29/0847 , H01L29/0653 , H01L29/0878 , H01L29/42368 , H01L29/7816 , H01L29/7835
摘要： The semiconductor device includes: a first conductive-type first well and a second conductive-type second well configured over a substrate to contact each other; a second conductive-type anti-diffusion region configured in an interface where the first conductive-type first well contacts the second conductive-type second well over the substrate; and a gate electrode configured to simultaneously cross the first conductive-type first well, the second conductive-type anti-diffusion region, and the second conductive-type second well over the substrate.
摘要翻译：半导体器件包括：第一导电型第一阱和第二导电型第二阱，其被配置在衬底上以彼此接触; 第二导电型防扩散区，其配置在所述第一导电型第一阱与所述第二导电型第二阱相接触的界面处; 以及栅电极，其被配置为在所述衬底上同时与所述第一导电型第一阱，所述第二导电型反扩散区和所述第二导电型第二阱交叉。

8. 发明授权

US08487351B2 Image sensor and image sensing system including the same 有权
标题翻译：图像传感器和图像传感系统包括相同的
公开(公告)号：US08487351B2
公开(公告)日：2013-07-16
申请号：US12591632
申请日：2009-11-25
申请人： Kyung Ho Lee , Dong-Yoon Jang , Jung Chak Ahn , Moo Sup Lim , Yong Jei Lee , Jong Eun Park
发明人： Kyung Ho Lee , Dong-Yoon Jang , Jung Chak Ahn , Moo Sup Lim , Yong Jei Lee , Jong Eun Park
IPC分类号： H01L27/148
CPC分类号： H01L27/14623 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14643
摘要： The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.
摘要翻译：提供了图像传感器和包括其的图像感测系统。图像传感器包括半导体衬底，形成在位于半导体衬底中的像素区域并包括多个光电转换器的像素阵列，形成在半导体衬底中限定的电路区域的多个驱动电路。图像传感器包括至少一个阻热器或隔热罩。可以在像素区域和半导体衬底中的电路区域之间形成至少一个热阻挡器。热阻挡器或隔热罩可以阻挡或消散在电路区域产生的热量，以通过半导体衬底传送到像素区域。使用背面照明传感器（BIS）结构的图像传感器或使用绝缘体上硅（SOI）半导体衬底的图像传感器）可以使用热阻挡器或隔热罩。

9. 发明申请

US20130093911A1 IMAGE SENSOR, ELECTRONIC DEVICE INCLUDING THE SAME, AND IMAGE SENSING METHOD 有权
标题翻译：图像传感器，包括其的电子设备和图像感测方法
公开(公告)号：US20130093911A1
公开(公告)日：2013-04-18
申请号：US13618076
申请日：2012-09-14
申请人： Sang Chul SUL , Hirosige GOTO , Kyung Ho LEE
发明人： Sang Chul SUL , Hirosige GOTO , Kyung Ho LEE
IPC分类号： H01L27/146 , H04N5/225
CPC分类号： H04N5/3745 , H01L27/307 , H04N5/3591 , H04N5/378
摘要： An image sensor and an image sensing method are provided. The image sensor includes a semiconductor substrate; a photoelectric converter comprising a bias unit, which comprises a first electrode and a second electrode, and an organic photoelectric conversion layer, which selectively absorbs light and converts the light into electrons; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store electrons; a read-out unit to converts charge transferred from the storage node into an image signal; a pixel array comprising a plurality of pixels, each of which comprises an intermediate insulating layer; and an output circuit configured to read out the image signal from the pixel array. The quantity of light received by the organic photoelectric conversion layer is adjusted by a bias change of the bias unit.
摘要翻译：提供了图像传感器和图像感测方法。图像传感器包括半导体衬底; 光电转换器包括偏置单元，其包括第一电极和第二电极，以及有机光电转换层，其选择性地吸收光并将光转换成电子; 与所述第二电极接触以将所述光电转换器与所述半导体衬底连接的通孔; 被配置为存储电子的存储节点; 读出单元，用于将从存储节点传送的电荷转换为图像信号; 包括多个像素的像素阵列，每个像素包括中间绝缘层; 以及输出电路，被配置为从像素阵列读出图像信号。由有机光电转换层接收的光量由偏置单元的偏置变化来调节。

10. 发明申请

US20120291272A1 METHOD OF MANUFACTURING A FLEXIBLE PRINTED CIRCUIT BOARD 有权
公开(公告)号：US20120291272A1
公开(公告)日：2012-11-22
申请号：US13472937
申请日：2012-05-16
申请人： Kyung Ho LEE , Se Min Oh , Chang Hwan Choi , Choon Keun Lee , Jeong Yeol Moon , Jong Rip Kim
发明人： Kyung Ho LEE , Se Min Oh , Chang Hwan Choi , Choon Keun Lee , Jeong Yeol Moon , Jong Rip Kim
IPC分类号： H05K3/00
CPC分类号： H05K1/028 , H05K1/0218 , H05K2201/0191 , H05K2201/0352 , H05K2201/0715 , H05K2201/09736 , Y10T29/49117 , Y10T29/49124 , Y10T29/49126
摘要： An FPCB and a method of manufacturing the same, in which an electrical signal-conductive portion of the FPCB is subjected to little stress so as not to be broken by fatigue in spite of repeated bending of the FPCB, thereby increasing the lifetime of the FPCB.

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