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1. 发明授权

US08208052B2 Image capture device 有权
标题翻译：图像捕获设备
公开(公告)号：US08208052B2
公开(公告)日：2012-06-26
申请号：US12865161
申请日：2009-12-14
申请人： Masao Hiramoto , Kazuya Yonemoto , Yoshiaki Sugitani
发明人： Masao Hiramoto , Kazuya Yonemoto , Yoshiaki Sugitani
IPC分类号： H04N5/335 , H04N9/07 , H04N5/225 , G02B27/42 , H01L27/00 , H01L31/062
CPC分类号： H04N9/045 , G02B5/045 , G02B27/42 , H01L27/14603 , H01L27/14625
摘要： A color representation technique to be effectively applicable to a pixel shifted arrangement to realize high sensitivity and high resolution is provided by using a dipersive prism or diffraction.A dispersive element is provided for an image sensor in which photosensitive cells are arranged to be shifted from each other by a half pitch both horizontally and vertically. The dispersive element makes at least G rays fall straight down to a pixel right under itself and also makes either R rays or B rays incident on an adjacent pixel. Meanwhile, a photosensitive cell, for which no dispersive element is provided, receives directly incident light, too. Color information can be obtained by making computations on photoelectrically converted signals provided by these pixels.
摘要翻译：通过使用汲取的棱镜或衍射来提供可有效地应用于像素偏移布置以实现高灵敏度和高分辨率的颜色表示技术。为图像传感器提供色散元件，其中感光单元布置成水平和垂直地彼此偏移半个间距。色散元素使至少G光线直接落在自身下方的像素之下，并且还使R射线或B射线入射到相邻像素上。同时，没有设置色散元件的感光单元也直接接收入射光。可以通过对由这些像素提供的光电转换信号进行计算来获得颜色信息。

2. 发明授权

US08031248B2 Solid state imaging element having horizontal scanning circuit for providing reset signals 有权
标题翻译：具有用于提供复位信号的水平扫描电路的固态成像元件
公开(公告)号：US08031248B2
公开(公告)日：2011-10-04
申请号：US10944977
申请日：2004-09-20
申请人： Takahisa Ueno , Kazuya Yonemoto , Ryoji Suzuki , Koichi Shiono
发明人： Takahisa Ueno , Kazuya Yonemoto , Ryoji Suzuki , Koichi Shiono
IPC分类号： H04N5/335
CPC分类号： H04N5/363 , H01L27/14609 , H01L27/14612 , H01L27/14638 , H01L27/14643 , H04N3/1512 , H04N3/155 , H04N5/335 , H04N5/341 , H04N5/374 , H04N5/3742 , H04N5/3745 , H04N5/37457
摘要： Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse φVn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.
摘要翻译：由于构成具有放大功能的单位像素的大量元素将阻碍像素尺寸的减小，以矩阵形式排列的单位像素n，m由光电二极管组成，转移开关用于转移存储在光电二极管中的电荷，浮置用于存储由转移开关传送的电荷的扩散，用于复位浮动扩散的复位开关，以及用于根据浮动扩散的电位向垂直信号线输出信号的放大晶体管，以及通过提供垂直选择脉冲＆phgr; Vn到复位开关的漏极以控制其复位电位，以行为单位选择像素。

3. 发明授权

US07116365B1 Solid-state imaging element, method for driving the same, and camera system 有权
公开(公告)号：US07116365B1
公开(公告)日：2006-10-03
申请号：US09327523
申请日：1999-06-08
申请人： Takahisa Ueno , Kazuya Yonemoto , Ryoji Suzuki , Koichi Shiono
发明人： Takahisa Ueno , Kazuya Yonemoto , Ryoji Suzuki , Koichi Shiono
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/363 , H01L27/14609 , H01L27/14612 , H01L27/14638 , H01L27/14643 , H04N3/1512 , H04N3/155 , H04N5/335 , H04N5/341 , H04N5/374 , H04N5/3742 , H04N5/3745 , H04N5/37457
摘要： Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse φVn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.

4. 发明申请

US20050088548A1 Solid state image sensor with fixed pattern noise reduction 有权
标题翻译：固态图像传感器具有固定图案降噪功能
公开(公告)号：US20050088548A1
公开(公告)日：2005-04-28
申请号：US10627055
申请日：2003-07-25
申请人： Ryoji Suzuki , Takahisa Ueno , Koichi Shiono , Kazuya Yonemoto
发明人： Ryoji Suzuki , Takahisa Ueno , Koichi Shiono , Kazuya Yonemoto
IPC分类号： H04N5/225 , H04N5/335 , H04N5/357 , H04N5/359 , H04N5/363 , H04N5/365 , H04N5/374 , H04N5/3745 , H04N5/376 , H04N5/378 , H04N5/217
CPC分类号： H04N5/378 , H04N5/335 , H04N5/3575 , H04N5/3597 , H04N5/363 , H04N5/365 , H04N5/3658 , H04N5/374 , H04N5/3745
摘要： A solid-state image sensor comprises unit pixels each having a photoelectric conversion element for converting incident light into electric signal charge and then storing the signal charge obtained through such photoelectric conversion, an amplifying element for converting into an electric signal the signal charge stored in the photoelectric conversion element, and a select switch for selectively outputting the pixel signal from the amplifying element to a signal line. The image sensor further comprises a reset circuit in each of the unit pixels for resetting the photoelectric conversion element every time a pixel signal is outputted from the relevant unit pixel. The photoelectric conversion element is reset every time a pixel signal is outputted, so that a pre-reset signal and a post-reset signal are delivered from each unit pixel and then are transferred via a common path, and the difference between such signals is taken to suppress not only the fixed pattern noise derived from characteristic deviation in each unit pixel but also vertically correlated fixed pattern noises of vertical streaks.
摘要翻译：固态图像传感器包括单位像素，每个单元具有光电转换元件，用于将入射光转换为电信号电荷，然后存储通过这种光电转换获得的信号电荷;放大元件，用于将存储在光电转换元件，以及用于选择性地将来自放大元件的像素信号输出到信号线的选择开关。图像传感器还包括每个单位像素中的复位电路，用于在每次从相关单位像素输出像素信号时复位光电转换元件。光电转换元件在每次输出像素信号时复位，从而从每个单位像素传送预复位信号和复位后信号，然后通过公共路径传输，并且采用这种信号之间的差异不仅抑制来自每个单位像素中的特征偏差的固定模式噪声，而且抑制垂直条纹的垂直相关的固定模式噪声。

5. 发明授权

US06842192B1 Solid state image pickup device having an amplifier for each vertical signal line and driving method therefor 失效
标题翻译：具有用于每个垂直信号线的放大器的固态图像拾取装置及其驱动方法
公开(公告)号：US06842192B1
公开(公告)日：2005-01-11
申请号：US09159569
申请日：1998-09-24
申请人： Ryoji Suzuki , Kazuya Yonemoto , Takahisa Ueno
发明人： Ryoji Suzuki , Kazuya Yonemoto , Takahisa Ueno
IPC分类号： H01L27/146 , H04N5/335 , H04N5/347 , H04N5/363 , H04N5/365 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/3745 , H04N5/378 , H04N3/14
CPC分类号： H01L27/14609 , H01L27/14643 , H04N5/374
摘要： According to a solid-state image pickup device and a driving method thereof in which unit pixels, each comprising a photodiode, a selection MOS transistor and a read-out MOS transistor, are two-dimensionally disposed in a matrix form, and each vertical signal line is connected to a column amplifier. The vertical signal line is first reset by a reset MOS transistor, and then a pixel signal is read out from the photodiode to the vertical signal line to successively output the reset level and the signal level to a horizontal signal line through the same route (the column amplifier, the horizontal selection MOS transistor, etc.), and then the difference between the reset level and the signal level is calculated by a CDS circuit.
摘要翻译：根据固态图像拾取装置及其驱动方法，其中每个包括光电二极管，选择MOS晶体管和读出MOS晶体管的单位像素以矩阵形式二维地布置，并且每个垂直信号线路连接到列放大器。垂直信号线首先由复位MOS晶体管复位，然后将像素信号从光电二极管读出到垂直信号线，以通过相同的路线将复位电平和信号电平连续地输出到水平信号线（列放大器，水平选择MOS晶体管等），然后由CDS电路计算复位电平和信号电平之间的差。

6. 发明授权

US5869352A Method of manufacturing an amplifying solid-state imaging device 失效
标题翻译：制造放大固态成像装置的方法
公开(公告)号：US5869352A
公开(公告)日：1999-02-09
申请号：US926646
申请日：1997-09-10
申请人： Yasushi Maruyama , Hideshi Abe , Kazuya Yonemoto , Takahisa Ueno , Junji Yamane
发明人： Yasushi Maruyama , Hideshi Abe , Kazuya Yonemoto , Takahisa Ueno , Junji Yamane
IPC分类号： H01L27/08 , H01L27/146 , H01L31/0352 , H04N5/335 , H04N5/355 , H04N5/359 , H04N5/369 , H04N5/372 , H04N5/3745 , H04N5/378 , H01L31/18
CPC分类号： H01L27/14654 , H01L27/14609 , H01L27/14689 , H01L31/035236
摘要： In an amplifying type solid-state imaging device having a pixel MOS transistor, the occurrence of blooming can be suppressed and an amount of signal charges can be increased. A second conductivity-type overflow-barrier region (23) and a first conductivity-type semiconductor region (24) are sequentially formed on a first conductivity-type semiconductor substrate (22). A pixel MOS transistor (29) comprising a source region (27), a drain region (28) and a gate portion (26) is formed on the first conductivity-type semiconductor region (24), and a second conductivity-type channel stopper region (41) for signal charges accumulated in the first conductivity-type semiconductor region (24) of the gate portion (26) is formed within the first conductivity-type semiconductor region (24) formed just below the drain region (28).
摘要翻译：在具有像素MOS晶体管的放大型固态成像器件中，可以抑制发光，并且可以增加信号电荷量。在第一导电型半导体衬底（22）上依次形成第二导电型溢出阻挡区（23）和第一导电型半导体区（24）。在第一导电型半导体区域（24）上形成包括源极区域（27），漏极区域（28）和栅极部分（26）的像素MOS晶体管（29），第二导电型沟道阻挡层在栅极部分（26）的第一导电型半导体区域（24）中累积的信号电荷的区域（41）形成在形成在漏区（28）正下方的第一导电类型半导体区域（24）内。

7. 发明授权

US5293237A CCD image sensing device having a p-well region with a high impurity concentration 失效
标题翻译： CCD图像感测装置具有杂质浓度高的p阱区域
公开(公告)号：US5293237A
公开(公告)日：1994-03-08
申请号：US880904
申请日：1992-05-08
申请人： Kazuya Yonemoto
发明人： Kazuya Yonemoto
IPC分类号： H01L27/148 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/361 , H04N5/369 , H04N5/3722
CPC分类号： H01L27/14831
摘要： A CCD image sensing device has vertical shift registers (22), a horizontal shift register (3A), a horizontal transfer gate (4), a horizontal shift register (3B), a smear gate (6), a smear drain region (7) and a channel stop region (8) arranged in that order on an n-type substrate (N-Sub). A p-well region underlying the vertical shift registers (22), the horizontal shift register (3A), the horizontal transfer gate (4), the horizontal shift register (3B) the smear gate (6), the smear drain region (7) and the channel stop region (8) is doped in a high impurity concentration to stabilize the potential of the p-well region at a potential substantially equal to that of the channel stop region (8), i.e., ground potential (GND). Consequently, no hole storage region is formed in the p-well and hence the deterioration of the signal transfer performance can be prevented. Since no hole-depletion region is created, no dark current due to avalanche is produced.
摘要翻译： CCD图像感测装置具有垂直移位寄存器（22），水平移位寄存器（3A），水平传输门（4），水平移位寄存器（3B），污迹门（6），污迹漏区（7））和在n型衬底（N-Sub）上依次排列的通道停止区域（8）。垂直移位寄存器（22），水平移位寄存器（3A），水平传输门（4），水平移位寄存器（3B），污迹门（6），污迹漏区（7）），并且沟道停止区域（8）以高杂质浓度掺杂以将p阱区域的电位稳定在与沟道停止区域（8）的电位基本相等的电位，即接地电位（GND）。因此，在p阱中不形成空穴存储区域，因此可以防止信号传递性能的劣化。由于不产生空穴耗尽区域，所以不产生由于雪崩导致的暗电流。

8. 发明授权

US5237191A Solid-state charge-coupled-device imager 失效
标题翻译：固态电荷耦合器件成像器
公开(公告)号：US5237191A
公开(公告)日：1993-08-17
申请号：US787643
申请日：1991-11-04
申请人： Kazuya Yonemoto , Kazunori Tsukigi
发明人： Kazuya Yonemoto , Kazunori Tsukigi
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H04N1/028 , H04N5/335 , H04N5/341 , H04N5/3728
CPC分类号： H01L27/14831
摘要： A solid-state charge-coupled-device imager has an imaging region composed of a matrix of vertically and horizontally arrayed photosensitive areas for storing signal charges depending on the intensity of applied light, and a plurality of vertical shift resisters for vertically transferring the signal charges shifted from the photosensitive areas. The signal charges from the vertical shift registers are shifted to a horizontal shift register that transfers the signal charges in a horizontal direction. The horizontal shift register comprises a plurality of charge transfer electrodes horizontally spaced at predetermined intervals. The charge transfer electrodes are inclined to the horizontal direction. The charge transfer electrodes may be inclined linearly in their entirety to the horizontal direction or may be of a chevron shape.
摘要翻译：固态电荷耦合器件成像器具有由垂直和水平阵列的感光区域的阵列组成的成像区域，用于根据所施加的光的强度存储信号电荷;以及多个垂直移位寄存器，用于垂直传送信号电荷从感光区转移。来自垂直移位寄存器的信号电荷被移动到在水平方向上传送信号电荷的水平移位寄存器。水平移位寄存器包括以预定间隔水平隔开的多个电荷转移电极。电荷转移电极相对于水平方向倾斜。电荷转移电极可以在整个水平方向上线性地倾斜，或者可以是人字形。

9. 发明授权

US4780765A Solid state image pick-up device 失效
标题翻译：固态摄像装置
公开(公告)号：US4780765A
公开(公告)日：1988-10-25
申请号：US025634
申请日：1987-03-13
申请人： Masaharu Hamasaki , Kikue Ishikawa , Yoshiaki Kagawa , Tomoyuki Suzuki , Kazuya Yonemoto
发明人： Masaharu Hamasaki , Kikue Ishikawa , Yoshiaki Kagawa , Tomoyuki Suzuki , Kazuya Yonemoto
IPC分类号： H01L27/148 , H01L21/76 , H01L27/14 , H04N5/335 , H04N5/359 , H04N5/365 , H04N5/369 , H04N5/372 , H04N3/14
CPC分类号： H04N5/3595 , H01L27/14887
摘要： A solid state image pick-up device includes means for cancelling a difference in impedance between photo-sensing areas in a photo-sensitive array. The impedance difference cancelling means cancels or makes the difference of impedance at each photo-sensing area ignorable to unify the charge handling in respective photo-sensing areas. In practice, the impedance difference cancelling means provides a resistance high enough to make the impedance difference between respective photo-sensing areas ignorable.
摘要翻译：固态图像拾取装置包括用于消除光敏阵列中的感光区域之间的阻抗差异的装置。阻抗差消除装置抵消或使每个感光区域处的阻抗差可忽略以统一各个感光区域中的电荷处理。实际上，阻抗差消除装置提供足够高的电阻，使各个感光区域之间的阻抗差可忽略。

10. 发明授权

US08922689B2 Solid-state imaging element having image signal overflow path 有权
公开(公告)号：US08922689B2
公开(公告)日：2014-12-30
申请号：US13565383
申请日：2012-08-02
申请人： Takahisa Ueno , Kazuya Yonemoto , Ryoji Suzuki , Koichi Shiono
发明人： Takahisa Ueno , Kazuya Yonemoto , Ryoji Suzuki , Koichi Shiono
IPC分类号： H04N5/335 , H04N5/3745 , H01L27/146 , H04N3/14
CPC分类号： H04N5/363 , H01L27/14609 , H01L27/14612 , H01L27/14638 , H01L27/14643 , H04N3/1512 , H04N3/155 , H04N5/335 , H04N5/341 , H04N5/374 , H04N5/3742 , H04N5/3745 , H04N5/37457
摘要： Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse φVn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.

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