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1. 发明授权

US11960204B2 Microlithographic fabrication of structures 有权
公开(公告)号：US11960204B2
公开(公告)日：2024-04-16
申请号：US17819711
申请日：2022-08-15
申请人： Molecular Imprints, Inc.
发明人： Vikramjit Singh
IPC分类号： G03F7/00 , G02B5/18 , G03F7/40 , G02B27/01
CPC分类号： G03F7/0005 , G02B5/1857 , G03F7/0002 , G03F7/0037 , G03F7/40 , G03F7/7045 , G02B2027/0118 , G02B27/0172 , G02B2027/0178
摘要： Asymmetric structures formed on a substrate and microlithographic methods for forming such structures. Each of the structures has a first side surface and a second side surface, opposite the first side surface. A profile of the first side surface is asymmetric with respect to a profile of the second side surface. The structures on the substrate are useful as a diffraction pattern for an optical device.

2. 发明授权

US09958787B2 Lithographic method and apparatus 有权
公开(公告)号：US09958787B2
公开(公告)日：2018-05-01
申请号：US14428023
申请日：2013-09-17
申请人： ASML Netherlands B.V.
发明人： Erik Roelof Loopstra , Jan Bernard Plechelmus Van Schoot , Timotheus Franciscus Sengers , Christiaan Louis Valentin , Antonius Johannes Josephus Van Dijsseldonk
IPC分类号： G03B27/52 , G03F7/20
CPC分类号： G03F7/70425 , G03F7/7045 , G03F7/70466 , G03F7/70475
摘要： A method of exposing a patterned area on a substrate using an EUV lithographic apparatus having a demagnification of about 5× and a numerical aperture of about 0.4 is disclosed. The method comprises exposing a first portion of the patterned area on the substrate using a first exposure, the first portion dimensions are significantly less than the dimensions of a conventional exposure, and exposing one or more additional portions of the patterned area on the substrate using one or more additional exposures, the additional portions having dimensions which are significantly less than the dimensions of a conventional exposure. The method further comprises repeating the above to expose a second patterned area on the substrate, the second patterned area being provided with the same pattern as the first patterned area, wherein a distance between center points of the first and second patterned areas corresponds with a dimension of a conventional exposure.

3. 发明授权

US09766551B2 Heat actuated and projected lithography systems and methods 有权
公开(公告)号：US09766551B2
公开(公告)日：2017-09-19
申请号：US14439252
申请日：2013-10-15
申请人： NORTHWESTERN UNIVERSITY
发明人： Chad A. Mirkin , Xing Liao , Keith A. Brown , Guoliang Liu , Abrin L. Schmucker , Shu He , Wooyoung Shim , Daniel J. Eichelsdoerfer , Boris Rasin
IPC分类号： G03B27/52 , G03B27/54 , G03F7/20 , G03F7/00 , B05D1/26 , B05D3/06 , G02B13/14 , B82Y40/00
CPC分类号： G03F7/7035 , B05D1/26 , B05D3/06 , B82Y40/00 , G02B13/143 , G03F7/0002 , G03F7/20 , G03F7/2049 , G03F7/70141 , G03F7/70325 , G03F7/70383 , G03F7/7045
摘要： In accordance with an embodiment of the disclosure, a method of patterning can include dividing an image into a set of frame sections; determining a tip pattern for a respective portion of an image to be patterned by each tip of the tip array in each frame section of the set of frame sections; disposing the tip array in a patterning position in a first location of the substrate corresponding to a location of the substrate in which the first frame section in the set of frame sections is to be patterned; projecting a first pattern of radiation onto the tip array to selectively irradiate one or more tips of the tip array and pattern the substrate, wherein the first pattern of radiation corresponds to a tip pattern for the first frame section; disposing the tip array in a patterning position in a second location of the substrate corresponding to a location of the substrate in which the second frame section in the set of frame sections is to be patterned; projecting a second pattern of radiation onto the tip array to selectively irradiate tips of the tip array and pattern the substrate, wherein the second pattern of radiation corresponds to a tip pattern for the second frame section; and repeating the disposing and projecting for each frame section in the set of frame sections to pattern the image.

4. 发明申请

US20170003602A1 MULTISCALE PATTERNING OF A SAMPLE WITH APPARATUS HAVING BOTH THERMO-OPTICAL LITHOGRAPHY CAPABILITY AND THERMAL SCANNING PROBE LITHOGRAPHY CAPABILITY 有权
标题翻译：具有两个热光学平移能力和热扫描探针能力的装置的样品的多尺度图案
公开(公告)号：US20170003602A1
公开(公告)日：2017-01-05
申请号：US15104596
申请日：2014-11-13
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , SWISSLITHO AG
发明人： URS T DUERIG , STEFAN FRINGES , FELIX HOLZNER , ARMIN W KNOLL
IPC分类号： G03F7/20
CPC分类号： G03F7/70591 , G03F7/70383 , G03F7/7045 , G03F7/70458
摘要： The present invention provides a method for multiscale patterning of a sample. The method includes: placing the sample in an apparatus having both thermo-optical lithography capability and thermal scanning probe lithography capability; and patterning two patterns onto the sample, respectively by: thermo-optical lithography, wherein light is emitted from a light source onto the sample to heat the latter and thereby write a first pattern that is the largest of the two patterns; and thermal scanning probe lithography, wherein the sample and a heated probe tip are brought in contact for writing a second pattern that has substantially smaller critical dimensions than the first pattern. There is also provided an apparatus for multiscale patterning of a sample.
摘要翻译：本发明提供一种用于样品的多尺度图案化的方法。该方法包括：将样品放置在具有热光学光刻能力和热扫描探针光刻能力的设备中; 并且通过以下方式分别将两个图案图案化：样品上的热光学光刻，其中光从光源发射到样品上以加热样品，从而写出两个图案中最大的第一图案; 和热扫描探针光刻，其中使样品和加热的探针尖端接触以写入具有比第一图案明显更小的临界尺寸的第二图案。还提供了一种用于样品的多尺度图案化的装置。

5. 发明申请

US20160126137A1 COMBINING CUT MASK LITHOGRAPHY AND CONVENTIONAL LITHOGRAPHY TO ACHIEVE SUB-THRESHOLD PATTERN FEATURES 审中-公开
标题翻译：组合切割掩模图和常规算法以实现子阈值图案特征
公开(公告)号：US20160126137A1
公开(公告)日：2016-05-05
申请号：US14993065
申请日：2016-01-11
申请人： QUALCOMM Incorporated
发明人： John J. ZHU , Zhongze WANG , Da YANG
IPC分类号： H01L21/768
CPC分类号： H01L21/76894 , G03F7/7045 , G03F7/70466 , H01L21/28123 , H01L21/283 , H01L21/31 , H01L21/469 , H01L21/76892 , H01L21/76895 , H01L23/50 , H01L24/27 , H01L24/31 , H01L2924/0002 , H01L2924/12042 , H01L2924/00
摘要： Features are fabricated on a semiconductor chip. The features are smaller than the threshold of the lithography used to create the chip. A method includes patterning a first portion of a feature (such as a local interconnect) and a second portion of the feature to be separated by a predetermined distance, such as a line tip to tip space or a line space. The method further includes patterning the first portion with a cut mask to form a first sub-portion (e.g., a contact) and a second sub-portion. A dimension of the first sub-portion is less than a dimension of a second predetermined distance, which may be a line length resolution of a lithographic process having a specified width resolution. A feature of a semiconductor device includes a first portion and a second portion having a dimension less than a lithographic resolution of the first portion.
摘要翻译：特征是在半导体芯片上制造的。这些特征小于用于制造芯片的光刻的阈值。一种方法包括图案化特征（例如局部互连）的第一部分和要分离预定距离的特征的第二部分，例如线尖到尖端空间或线空间。该方法还包括用切割掩模图案化第一部分以形成第一子部分（例如，接触）和第二子部分。第一子部分的尺寸小于第二预定距离的尺寸，其可以是具有指定宽度分辨率的光刻工艺的线长分辨率。半导体器件的特征包括具有小于第一部分的光刻分辨率的尺寸的第一部分和第二部分。

6. 发明授权

US09280062B2 Exposure device 有权
标题翻译：曝光装置
公开(公告)号：US09280062B2
公开(公告)日：2016-03-08
申请号：US13883001
申请日：2011-11-04
申请人： Duk Lee , Hidetoshi Tabata
发明人： Duk Lee , Hidetoshi Tabata
IPC分类号： G03F7/20 , H05K1/02
CPC分类号： G03F7/70208 , G03F7/203 , G03F7/70191 , G03F7/70291 , G03F7/7045 , G03F7/70541 , H05K1/0269 , H05K2201/09918 , H05K2201/09936
摘要： An exposure device can exposes a circuit pattern while information data is suitably changed. An exposure device comprises a first light source (20) for irradiating a first light including ultraviolet rays, a projection exposure unit (70) for exposing a circuit pattern drawn on a photomask on a substrate, with the first light, a substrate stage (60) for mounting the substrate, a housing (11) for arranging the substrate stage, a second light source (41) for irradiating a second light including ultraviolet rays, arranged at a position different from the first light source, a spatial light modulation unit (40) for exposing information data formed electrically using the second light on the substrate, and a spatial optical light modulation unit driving means (5) for moving the spatial light modulation unit arranged on the housing (11) in a direction parallel to a moving direction of the substrate stage.
摘要翻译：曝光装置可以在适当改变信息数据的同时曝光电路图案。曝光装置包括用于照射包括紫外线的第一光的第一光源（20），用于暴露在基板上的光掩模上绘制的电路图案的投影曝光单元（70），第一光，基板台），用于布置基板台的壳体（11），用于照射布置在与第一光源不同的位置的包括紫外线的第二光的第二光源（41），空间光调制单元（ 40），用于使用所述基板上的所述第二光电气地形成的信息数据;以及空间光调制单元驱动装置（5），用于沿平行于移动方向的方向移动布置在所述壳体（11）上的所述空间光调制单元的基底阶段。

7. 发明申请

US20140347643A1 LITHOGRAPHY APPARATUS, LITHOGRAPHY METHOD, LITHOGRAPHY SYSTEM, AND METHOD OF MANUFACTURING ARTICLE 审中-公开
标题翻译：光刻设备，光刻方法，光刻系统及其制造方法
公开(公告)号：US20140347643A1
公开(公告)日：2014-11-27
申请号：US14283264
申请日：2014-05-21
申请人： CANON KABUSHIKI KAISHA
发明人： Masashi KOTOKU , Tomoyuki MIYASHITA , Hiromi KINEBUCHI
IPC分类号： G03F7/20
CPC分类号： G03F7/70558 , G03F7/2022 , G03F7/70425 , G03F7/7045 , G03F7/70466 , G03F7/70608
摘要： The present invention provides a lithography apparatus which forms a pattern on a substrate, the apparatus including a first dosing device configured to apply a first dose to the substrate based on data corresponding to the pattern, an acquiring device configured to acquire information of an error of a dimension of a pattern formed on the substrate via application of the first dose thereto, and a second dosing device configured to apply a second dose to the substrate based on the acquired information.
摘要翻译：本发明提供一种在基板上形成图案的光刻设备，该设备包括：第一计量装置，其配置为基于对应于图案的数据向基板施加第一剂量;获取装置，被配置为获取信息的错误信息通过对其施加第一剂量而在基板上形成的图案的尺寸，以及被配置为基于所获取的信息向基板施加第二剂量的第二计量装置。

8. 发明授权

US08896809B2 Lithographic apparatus and device manufacturing method 有权
标题翻译：平版印刷设备和器件制造方法
公开(公告)号：US08896809B2
公开(公告)日：2014-11-25
申请号：US11889722
申请日：2007-08-15
申请人： Judocus Marie Dominicus Stoeldraijer , Erik Roelof Loopstra , Jan Bernard Plechelmus Van Schoot , Diederik Jan Maas
发明人： Judocus Marie Dominicus Stoeldraijer , Erik Roelof Loopstra , Jan Bernard Plechelmus Van Schoot , Diederik Jan Maas
IPC分类号： G03B27/42 , G03F7/20
CPC分类号： G03F7/7045 , G03F7/70425 , G03F7/70466 , G03F7/70733 , G03F7/70991
摘要： A lithographic apparatus and method is disclosed to reduce the exposure time that a substrate spends within a main lithographic apparatus by pre- (or post-) exposing one or more edge devices on the substrate. Because an edge device does not ultimately yield a useful device, it can be exposed with a lithographic apparatus that has a lower resolution than that used to expose one or more of the other, complete devices produced from the substrate. Therefore, the pre- (or post-) exposure of an edge device can be performed using a less complex, and less expensive, lithographic device.
摘要翻译：公开了一种光刻设备和方法，以通过预先（或后）暴露基板上的一个或多个边缘设备来减少基板在主平版印刷设备内花费的曝光时间。因为边缘装置最终不会产生有用的装置，所以可以用光刻设备曝光，该光刻设备的分辨率比用于暴露从基板产生的一个或多个其它完整装置的分辨率低。因此，可以使用较不复杂和较便宜的光刻设备来执行边缘设备的预曝光（或后曝光）。

9. 发明申请

US20130078558A1 LITHOGRAPHIC CD CORRECTION BY SECOND EXPOSURE 有权
标题翻译：第二次曝光的光刻光盘校正
公开(公告)号：US20130078558A1
公开(公告)日：2013-03-28
申请号：US13595650
申请日：2012-08-27
申请人： Arthur HOTZEL
发明人： Arthur HOTZEL
IPC分类号： G03F7/20
CPC分类号： G03F7/70466 , G03F1/24 , G03F1/70 , G03F7/7045 , G03F7/70625
摘要： Correction of CD variation is accomplished with a second exposure, e.g. using a second reticle. Embodiments include exposing a first wafer with a first dose using a first reflective reticle having a pattern corresponding to a wafer target pattern, or measuring and/or inspecting first reticle pattern portions and calculating and/or simulating corresponding first wafer pattern portions obtained with a predetermined first dosage, identifying CD variations between the exposed wafer or the calculated/simulated first wafer pattern and the target pattern for different target pattern features, exposing a second wafer with the first reticle using a second dose, and correcting the CD variations by applying an additional exposure of the second wafer, before or after exposing the second wafer with the first reticle. Embodiments further include using additional exposures to prevent printing unwanted structures on the reticle or to deliberately vary sizes of selected structures on the wafer for development purposes.
摘要翻译： CD变异的校正是通过第二次曝光来实现的。使用第二个掩模版。实施例包括使用具有对应于晶片靶图案的图案的第一反射掩模版以第一剂量曝光第一晶片，或测量和/或检查第一标线图案部分，并计算和/或模拟以预定的方式获得的对应的第一晶片图案部分第一剂量，鉴定暴露的晶片或计算的/模拟的第一晶片图案与不同目标图案特征的目标图案之间的CD变化，使用第二剂量暴露具有第一掩模版的第二晶片，以及通过应用额外的在用第一掩模版曝光第二晶片之前或之后曝光第二晶片。实施例还包括使用额外的曝光来防止在掩模版上印刷不想要的结构，或者为了开发目的故意改变晶片上的选定结构的尺寸。

10. 发明授权

US08338262B2 Dual wavelength exposure method and system for semiconductor device manufacturing 有权
标题翻译：双波长曝光方法和半导体器件制造系统
公开(公告)号：US08338262B2
公开(公告)日：2012-12-25
申请号：US12478426
申请日：2009-06-04
申请人： Heng-Jen Lee , Jui-Chun Peng , I-Hsiung Huang
发明人： Heng-Jen Lee , Jui-Chun Peng , I-Hsiung Huang
IPC分类号： H01L21/336
CPC分类号： G03F7/203 , G03F7/7045 , G03F7/70458 , G03F7/70466
摘要： A dual wavelength exposure system provides for patterning a resist layer formed on a wafer for forming semiconductor devices, using two exposure operations, one including a first radiation having a first wavelength and the other including a second radiation including a second wavelength. Different or the same lithography tool may be used to generate the first and second radiation. For each die formed on the semiconductor device, a critical portion of the pattern is exposed using a first exposure operation that uses a first radiation with a first wavelength and a non-critical portion of the pattern is exposed using a second exposure operation utilizing the second radiation at a second wavelength. The resist material is chosen to be sensitive to both the first radiation having a first wavelength and the second radiation having the second wavelength.
摘要翻译：双波长曝光系统提供了使用两个曝光操作来形成在晶片上形成的晶片上的抗蚀剂层，一个包括具有第一波长的第一辐射，另一个包括包括第二波长的第二辐射。可以使用不同或相同的光刻工具来产生第一和第二辐射。对于形成在半导体器件上的每个裸片，使用第一曝光操作曝光图案的关键部分，该第一曝光操作使用第一波长的第一辐射，并且使用第二曝光操作曝光图案的非关键部分第二波长的辐射。抗蚀剂材料被选择为对具有第一波长的第一辐射和具有第二波长的第二辐射都敏感。

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