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    • 8. 发明授权
    • Method and apparatus for wafer level testing of semiconductor using sacrificial on die power and ground metalization
    • 使用牺牲裸片功率和地面金属化的半导体晶圆级测试的方法和装置
    • US06753547B2
    • 2004-06-22
    • US09939636
    • 2001-08-28
    • Kevin M. Devereaux
    • Kevin M. Devereaux
    • H01L2358
    • H01L22/32
    • The present invention provides a method and apparatus which facilitates wafer level burn-in testing of semiconductor dies. Sacrificial busses on the wafer supply voltage to respective on die Vcc and Vss sacrificial voltage pads during burn-in testing. The Vcc sacrificial pad on each die is connected to a secondary Vcc pad through an on-die sacrificial metal bus. An on-die fuse is interposed between the secondary Vcc pad and a normal Vcc die bonding pad. The fuse will blow when a die draws excessive current isolating a defective die from other dies on the wafer which are connected to the sacrificial busses. The Vss sacrificial pad is connected to a normal Vss die bonding pad through a sacrificial metal bus. After burn-in testing, the structures are removed. During this removal, the on-die sacrificial metal busses protect the secondary Vcc pad and Vss bonding pad. The secondary Vcc pad, Vcc bonding pad and Vss bonding pad can then be exposed for additional die testing.
    • 本发明提供一种便于半导体管芯的晶片级老化测试的方法和装置。 在老化试验期间,晶片上的牺牲性总线将电源电压分别提供给管芯Vcc和Vss牺牲电压焊盘。 每个管芯上的Vcc牺牲焊盘通过管芯牺牲金属总线连接到次级Vcc焊盘。 在Vcc焊盘和正常的Vcc焊盘之间插入管芯熔丝。 当芯片吸收过多的电流时,保险丝将会断开,故障芯片与连接到牺牲总线的晶片上的其他芯片分离。 Vss牺牲垫通过牺牲金属总线连接到正常的Vss裸片焊盘。 老化测试后,结构被去除。 在此移除期间,管芯牺牲金属总线保护辅助Vcc焊盘和Vss焊盘。 然后可以将次级Vcc焊盘,Vcc焊盘和Vss焊盘曝光以进行额外的裸片测试。