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1. 发明授权

US07457338B2 Quantum well lasers with strained quantum wells and dilute nitride barriers 有权
标题翻译：量子阱激光器与应变量子阱和稀氮化物屏障
公开(公告)号：US07457338B2
公开(公告)日：2008-11-25
申请号：US11406834
申请日：2006-04-19
申请人： Luke J. Mawst , Nelson Tansu , Jeng-Ya Yeh
发明人： Luke J. Mawst , Nelson Tansu , Jeng-Ya Yeh
IPC分类号： H01S3/04
CPC分类号： H01S5/34313 , B82Y20/00 , H01L33/06 , H01L33/30 , H01L33/32 , H01S5/028 , H01S5/12 , H01S5/18311 , H01S5/2009 , H01S5/2206 , H01S5/2231 , H01S5/3211 , H01S5/32366 , H01S5/3406 , H01S5/3422
摘要： In accordance with the present invention, GaAs-based optoelectronic devices have an active region that includes a well layer composed of a compressively-strained semiconductor that is free, or substantially free, of nitrogen disposed between two barrier layers composed of a nitrogen- and indium-containing semiconductor.
摘要翻译：根据本发明，GaAs基光电子器件具有一个有源区，该有源区包括一个由压缩应变半导体构成的阱层，该半导体自由或基本上不含氮，该氮被设置在由氮和铟组成的两个势垒层之间含半导体。

2. 发明授权

US5889805A Low-threshold high-efficiency laser diodes with aluminum-free active region 失效
标题翻译：具有无铝活性区域的低阈值高效激光二极管
公开(公告)号：US5889805A
公开(公告)日：1999-03-30
申请号：US741632
申请日：1996-11-01
申请人： Dan Botez , Luke J. Mawst
发明人： Dan Botez , Luke J. Mawst
IPC分类号： H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/343 , H01S5/3211 , H01S5/3213 , H01S5/32333 , H01S5/3409 , H01S5/3434
摘要： Semiconductor diode lasers include an aluminum free active region including at least one active layer having a general composition In.sub.(1-x) Ga.sub.x As.sub.y P.sub.(1-y) where 0.ltoreq.y.ltoreq.1; two confinement layers bounding the active region and having a general composition In.sub.(1-x) (Ga.sub.(1-z) Al.sub.z)x P wherein aluminum content z may be zero; and a lower cladding layer, and at least one upper cladding layer adjacent the confinement layers. The cladding layers have the same general composition as the adjacent confinement layer, but always have a finite aluminum content. The aluminum content of the cladding layers is selected such that the cladding layers have a energy bandgap greater than the energy bandgap of the confinement layers.
摘要翻译：半导体二极管激光器包括无铝的有源区，包括至少一个具有一般组成In（1-x）GaxAsyP（1-y）的活性层，其中0≤y≤1; 界定有源区并具有一般组成In（1-x）（Ga（1-z）Alz）xP的两个约束层，其中铝含量z可以为零; 和下包层，以及与限制层相邻的至少一个上包层。包覆层具有与相邻限制层相同的总体组成，但总是具有有限的铝含量。选择包覆层的铝含量使得包层具有比限制层的能带隙大的能带隙。

3. 发明授权

US4866724A Wide-waveguide interferometric array with interelement losses 失效
标题翻译：具有元件损耗的宽波导干涉阵列
公开(公告)号：US4866724A
公开(公告)日：1989-09-12
申请号：US233390
申请日：1988-08-18
申请人： Dan Botez , Luke J. Mawst
发明人： Dan Botez , Luke J. Mawst
IPC分类号： H01S5/40
CPC分类号： H01S5/4068
摘要： A semiconductor laser diode array structure in which interelement losses are deliberately included, to favor operation at higher-order array modes of operation, and thereby avoid the disadvantage of beam broadening that results when lower-order array modes of operation are used at very high drive currents. To provide a desirable far-field radiation pattern, the structure includes a wide-waveguide interferometric configuration to select only the lowest of the higher-order modes. The desired interelement losses are obtained in the illustrative embodiment by a buffer layer that provides antiguiding in a transverse direction, but only in the interelement regions. The buffer layer is transparent, for strong interelement coupling and stability of operation. The illustrative embodiment was operated at drive currents in excess of four times threshold current, and with beam broadening only slightly above the diffraction limit.
摘要翻译：一种半导体激光二极管阵列结构，其中有意地包括元件损耗，以有利于在高阶阵列工作模式下的操作，从而避免了当在非常高的驱动下使用低阶阵列工作模式时导致的光束变宽的缺点电流。为了提供期望的远场辐射图，该结构包括仅选择较低阶模式的宽波导干涉配置。在说明性实施例中，通过缓冲层在横向方向上提供防护，但仅在内部区域中获得所需的元件损耗。缓冲层是透明的，用于强耦合和稳定操作。说明性实施例在超过阈值电流的四倍的驱动电流下操作，并且光束变宽仅略高于衍射极限。

4. 发明授权

US06396865B1 Vertical-cavity surface-emitting lasers with antiresonant reflecting optical waveguides 有权
标题翻译：具有反谐振反射光波导的垂直腔表面发射激光器
公开(公告)号：US06396865B1
公开(公告)日：2002-05-28
申请号：US09699050
申请日：2000-10-27
申请人： Luke J. Mawst , Delai Zhou
发明人： Luke J. Mawst , Delai Zhou
IPC分类号： H01S5183
CPC分类号： H01S5/18327 , H01S5/18308 , H01S5/18358 , H01S5/2063 , H01S2301/166
摘要： A vertical cavity surface emitting semiconductor laser is formed with a multilayer structure on a semiconductor substrate that includes an active region layer, a central core, and an antiresonant reflecting waveguide ring surrounding the central core. The ring includes a region formed to have an effective higher index than the central core and sized to provide antiresonant lateral waveguiding confinement of a fundamental mode wavelength. Reflectors formed above and below the active region layer provide vertical confinement. The antiresonant reflecting ring may be formed either as a full ARROW structure including a quarter wavelength high effective index region and a quarter wavelength low effective index region or as a simplified ARROW structure having a single quarter wavelength high effective index region. The antiresonant reflecting ring provides efficient lateral confinement of the fundamental mode while allowing lateral leakage of higher modes to substantially suppress these modes, resulting in substantially single mode operation at relatively high powers.
摘要翻译：垂直腔表面发射半导体激光器在半导体衬底上形成多层结构，该半导体衬底包括有源区，中心芯和围绕中心芯的反谐振反射波导环。环包括形成为具有比中心芯有效的更高折射率的区域，并且其尺寸适于提供基本模式波长的反谐振横向波导约束。形成在有源区域层上方和下方的反射器提供垂直限制。反谐振反射环可以形成为包括四分之一波长高有效折射率区域和四分之一波长低有效折射率区域的全ARROW结构，或者形成具有单个四分之一波长的高有效折射率区域的简化ARROW结构。反谐振反射环提供基本模式的有效侧向约束，同时允许较高模式的横向泄漏以基本上抑制这些模式，导致在相对高的功率下基本上单模操作。

5. 发明授权

US06229153B1 High peak current density resonant tunneling diode 失效
标题翻译：高峰值电流密度谐振隧道二极管
公开(公告)号：US06229153B1
公开(公告)日：2001-05-08
申请号：US08879161
申请日：1997-06-19
申请人： Dan Botez , Luke J. Mawst , Ali R. Mirabedini
发明人： Dan Botez , Luke J. Mawst , Ali R. Mirabedini
IPC分类号： H01L2972
CPC分类号： B82Y10/00 , H01L29/882
摘要： A resonant tunneling diode is produced in a gallium arsenide material system formed with barrier layers of AlGaAs with a quantum well layer of low band-gap material between them. The material of the well is selected to adjust the second energy level to the edge of the conduction band in GaAs, with a preferred quantum well layer formed of InGaAs. The resonant tunneling diode structure is grown by a metal organic chemical vapor deposition process on the surface of the nominally exact (100) GaAs substrate. Layers of doped GaAs may be formed on either side of the multilayer resonant tunneling diode structure, and spacer layers of GaAs may also be provided on either side of the barrier layers to reduce the intrinsic capacitance of the structure.
摘要翻译：在砷化镓材料系统中制造谐振隧穿二极管，其中AlGaAs的阻挡层与它们之间具有低带隙材料的量子阱层。选择阱的材料以将GaAs中的导带的边缘的第二能级调整为由InGaAs形成的优选量子阱层。谐振隧道二极管结构通过金属有机化学气相沉积工艺在标称精确（100）GaAs衬底的表面上生长。可以在多层谐振隧道二极管结构的任一侧上形成掺杂GaAs的层，并且还可以在势垒层的任一侧上设置GaAs的间隔层以降低结构的本征电容。

6. 发明授权

US5272711A High-power semiconductor laser diode 失效
标题翻译：大功率半导体激光二极管
公开(公告)号：US5272711A
公开(公告)日：1993-12-21
申请号：US882336
申请日：1992-05-12
申请人： Luke J. Mawst , Dan Botez , Charles A. Zmudzinski
发明人： Luke J. Mawst , Dan Botez , Charles A. Zmudzinski
IPC分类号： H01S5/20 , H01S5/34 , H01S5/343 , H01S5/40 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S2301/18 , H01S5/3421 , H01S5/3432 , H01S5/4031
摘要： A high-power semiconductor laser diode that employs a lateral antiresonant reflecting optical waveguide for generating a single-mode laser beam having an aperture spot size on the order of 4 to 8 microns. The lateral antiresonant reflecting optical waveguide is a negative-index waveguide or antiguide that operates in an antiresonance condition for the fundamental lateral mode, but not for the higher-order lateral modes. Consequently, the fundamental lateral mode is reflected by the lateral waveguide while the higher-order lateral modes are allowed to leak out. This provides strong discrimination between the fundamental lateral mode and the higher-order lateral modes in order to generate a single-mode laser beam having a large aperture spot size. The lateral waveguide also provides good lateral mode stability due to the large negative step in the waveguide index of refraction.
摘要翻译：一种大功率半导体激光二极管，其使用横向反谐振反射光波导来产生具有4至8微米量级的光阑光斑尺寸的单模激光束。横向反谐振反射光波导是负基准波导或反射波导，其在基本横向模式的反共振条件下操作，但不适用于高阶侧向模式。因此，基本横向模式被横向波导反射，而高阶侧向模式被允许泄漏。这提供了基本横向模式和高阶横向模式之间的强烈区分，以便产生具有大孔径光斑尺寸的单模激光束。横向波导也由于波导折射率的较大的负梯度而提供良好的横向模式稳定性。

7. 发明授权

US4985897A Semiconductor laser array having high power and high beam quality 失效
标题翻译：具有高功率和高光束质量的半导体激光器阵列
公开(公告)号：US4985897A
公开(公告)日：1991-01-15
申请号：US254905
申请日：1988-10-07
申请人： Dan Botez , Michael Jansen , Luke J. Mawst , Gary L. Peterson , William W. Simmons , Jaroslava Z. Wilcox , Jane J. J. Yang
发明人： Dan Botez , Michael Jansen , Luke J. Mawst , Gary L. Peterson , William W. Simmons , Jaroslava Z. Wilcox , Jane J. J. Yang
IPC分类号： H01S3/23 , H01S3/06 , H01S5/00 , H01S5/14 , H01S5/40
CPC分类号： H01S5/4062 , H01S5/148 , H01S5/4068
摘要： A semiconductor laser array with features providing good beam quality at high powers, first by employing a laterally unguided diffraction region in which light from a set of waveguides is re-imaged in accordance with the Talbot effect and two arrays of waveguides may be used to provide a spatial filtering effect to select a desired array mode. This provides a laser array with increased power per unit solid angle, and with additional advantages of ability to scale the device up to larger arrays, ability to control the electrical excitation of the device for better optimization, and improved modal discrimination. A second aspect of the invention is the use of a resonance condition in an antiguide array, to produce a uniform near-field intensity pattern and improved coupling and device coherence. This resonance structure may be combined with the Talbot-effect structure to suppress the out-of-phase mode, or the out-of-phase mode may be suppressed by other means, such as by introducing interelement radiation losses or absorption losses in the antiguide array.

8. 发明授权

US4860298A Phased-locked array of semiconductor lasers using closely spaced antiguides 失效
标题翻译：使用紧密间隔的反射镜的半锁定激光器的锁相阵列
公开(公告)号：US4860298A
公开(公告)日：1989-08-22
申请号：US180415
申请日：1988-04-12
申请人： Dan Botez , Luke J. Mawst
发明人： Dan Botez , Luke J. Mawst
IPC分类号： H01S3/23 , H01S3/06 , H01S5/00 , H01S5/40
CPC分类号： H01S5/4068
摘要： A semiconductor laser diode array in which the lasing elements are formed as parallel negative-index waveguides, to provide operation at higher powers and in one of two stable array modes. Lasing in interelement regions, between the lasing elements, is suppressed by the inherently low transverse optical confinement factor provided by high-index semiconductor material in the interelement regions, and may be further suppressed by the use of an active layer that extends only through the lasing elements and not through the interelement regions. A desired array mode may be selected by the use of a structure favoring 0.degree.-phase-shift array modes, such as a wide-waveguide interferometric structure. Both liquid-phase epitaxy (LPE) and metalorganic chemical vapor deposition (MOCVD) processes may be used in fabrication of the device.

9. 发明授权

US08879595B2 Quantum cascade structures on metamorphic buffer layer structures 有权
标题翻译：量子级联结构在变质缓冲层结构上
公开(公告)号：US08879595B2
公开(公告)日：2014-11-04
申请号：US13283855
申请日：2011-10-28
申请人： Luke J. Mawst , Jeremy D. Kirch , Thomas F. Kuech
发明人： Luke J. Mawst , Jeremy D. Kirch , Thomas F. Kuech
IPC分类号： H01S5/00 , H01L21/02 , H01S5/34
CPC分类号： H01L21/02505 , B82Y20/00 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/0251 , H01L21/02546 , H01L21/0262 , H01S5/3402 , H01S5/3403 , H01S2304/04
摘要： Semiconductor structures, quantum cascade structures and lasers including the structures are provided. The semiconductor structures include a substrate, a metamorphic buffer layer structure over the substrate, and a quantum cascade structure including a superlattice of quantum wells and barriers over the metamorphic buffer layer structure. The substrate may be GaAs and the quantum cascade structure may be an InGaAs/InAlAs superlattice, including one or more barriers of AlAs.
摘要翻译：提供了包括结构的半导体结构，量子级联结构和激光器。半导体结构包括衬底，在衬底上的变质缓冲层结构，以及包括量子阱的超晶格和变质缓冲层结构上的势垒的量子级联结构。衬底可以是GaAs，并且量子级联结构可以是InGaAs / InAlAs超晶格，包括AlAs的一个或多个屏障。

10. 发明申请

US20140037258A1 FABRICATION OF LOW-LOSS, LIGHT-WAVEGUIDING, ORIENTATION-PATTERNED SEMICONDUCTOR STRUCTURES 有权
标题翻译：低损耗，轻微波动，方位图形半导体结构的制造
公开(公告)号：US20140037258A1
公开(公告)日：2014-02-06
申请号：US13562560
申请日：2012-07-31
申请人： Dan Botez , Thomas F. Kuech , Luke J. Mawst , Steven Christopher Ruder
发明人： Dan Botez , Thomas F. Kuech , Luke J. Mawst , Steven Christopher Ruder
IPC分类号： C30B25/04 , G02B6/10
CPC分类号： G02B6/122 , C30B25/04 , C30B29/403 , C30B29/42 , C30B29/44 , G02B2006/12035 , G02B2006/12097
摘要： Methods for the fabrication of orientation-patterned semiconductor structures are provided. The structures are light-waveguiding structures for nonlinear frequency conversion. The structures are periodically poled semiconductor heterostructures comprising a series of material domains disposed in a periodically alternating arrangement along the optical propagation axis of the waveguide. The methods of fabricating the orientation-patterned structures utilize a series of surface planarization steps at intermediate stages of the heterostructure growth process to provide interlayer interfaces having extremely low roughnesses.
摘要翻译：提供了制造取向图案化半导体结构的方法。该结构是用于非线性频率转换的光波导结构。这些结构是周期性极化的半导体异质结构，其包括沿波导的光传播轴定期交替布置的一系列材料畴。制造取向图案化结构的方法利用在异质结构生长过程的中间阶段的一系列表面平面化步骤，以提供具有极低粗糙度的层间界面。

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