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1. 发明申请

US20110001193A1 SEMICONDUCTOR DEVICE WITH AN IMPROVED OPERATING PROPERTY 审中-公开
标题翻译：具有改进的操作性能的半导体器件
公开(公告)号：US20110001193A1
公开(公告)日：2011-01-06
申请号：US12882643
申请日：2010-09-15
申请人： Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
发明人： Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
IPC分类号： H01L27/092
CPC分类号： H01L21/76816 , H01L21/76843 , H01L21/76877 , H01L21/823807 , H01L21/823871 , H01L23/485 , H01L29/7842 , H01L29/7845 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor comprises an n-channel transistor forming region and a p-channel transistor forming region, which are disposed while being sectioned by an element isolation region. The stress caused by contact plugs in the n-channel transistor forming region and the stress caused by contact plugs in the p-channel transistor forming region are made different from each other. With this, it enables to increase the drive current of both the n-channel transistor and p-channel transistor without changing the dimensions of the active region and the element isolation region.
摘要翻译：半导体包括n沟道晶体管形成区域和p沟道晶体管形成区域，它们被元件隔离区域划分。在n沟道晶体管形成区域中由接触插塞引起的应力和由p沟道晶体管形成区域中的接触插塞引起的应力彼此不同。由此，能够增加n沟道晶体管和p沟道晶体管的驱动电流，而不改变有源区和元件隔离区的尺寸。

2. 发明申请

US20090200582A1 SEMICONDUCTOR DEVICE WITH AN IMPROVED OPERATING PROPERTY 有权
标题翻译：具有改进的操作性能的半导体器件
公开(公告)号：US20090200582A1
公开(公告)日：2009-08-13
申请号：US12405668
申请日：2009-03-17
申请人： Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
发明人： Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
IPC分类号： H01L29/40
CPC分类号： H01L21/76816 , H01L21/76843 , H01L21/76877 , H01L21/823807 , H01L21/823871 , H01L23/485 , H01L29/7842 , H01L29/7845 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor comprises an n-channel transistor forming region and a p-channel transistor forming region, which are disposed while being sectioned by an element isolation region. The stress caused by contact plugs in the n-channel transistor forming region and the stress caused by contact plugs in the p-channel transistor forming region are made different from each other. With this, it enables to increase the drive current of both the n-channel transistor and p-channel transistor without changing the dimensions of the active region and the element isolation region.
摘要翻译：半导体包括n沟道晶体管形成区域和p沟道晶体管形成区域，它们被元件隔离区域划分。在n沟道晶体管形成区域中由接触插塞引起的应力和由p沟道晶体管形成区域中的接触插塞引起的应力彼此不同。由此，能够增加n沟道晶体管和p沟道晶体管的驱动电流，而不改变有源区和元件隔离区的尺寸。

3. 发明申请

US20070196965A1 Manufacturing method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20070196965A1
公开(公告)日：2007-08-23
申请号：US11600068
申请日：2006-11-16
申请人： Masaru Yamada , Akihiko Tsudumitani
发明人： Masaru Yamada , Akihiko Tsudumitani
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L21/76232
摘要： A first film and a second film are formed on a semiconductor substrate in this order. A resist pattern is formed on the second film. An opening is formed by removing the second film exposed between the resist pattern at a state where the second film remains on the bottom. A first removal preventing film is formed on the side wall of the opening and the residual film is removed at a state where the projecting part of the second film protruding from the sidewall to the opening remains. The first film exposed in the opening is removed. A second removal preventing film is formed on the first removal preventing film and the surface of the semiconductor substrate exposed in the opening is removed at a state where the projecting part of the semiconductor substrate protruding from the side wall to the opening remains and a round part is formed at the projecting part of the semiconductor substrate. The semiconductor substrate exposed in the opening is further removed.
摘要翻译：依次在半导体衬底上形成第一膜和第二膜。在第二膜上形成抗蚀剂图案。通过在第二膜保持在底部的状态下去除在抗蚀剂图案之间暴露的第二膜而形成开口。在开口的侧壁上形成有第一去除防护膜，并且在从侧壁突出到开口部的第二膜的突出部分残留的状态下去除残留膜。去除暴露在开口中的第一个薄膜。在第一去除防止膜上形成第二防除去除膜，并且在从侧壁突出到开口的半导体衬底的突出部分残留的状态下去除在开口中暴露的半导体衬底的表面，形成在半导体衬底的突出部分。在开口中暴露的半导体衬底被进一步去除。

4. 发明授权

US4410368A Process for liquefaction of starch 失效
标题翻译：淀粉液化过程
公开(公告)号：US4410368A
公开(公告)日：1983-10-18
申请号：US309099
申请日：1981-10-06
申请人： Yoshiyuki Takasaki , Yoshimasa Takahara , Chikashi Izumi , Atsuhi Mori , Masahiko Nishiguchi , Masaru Yamada
发明人： Yoshiyuki Takasaki , Yoshimasa Takahara , Chikashi Izumi , Atsuhi Mori , Masahiko Nishiguchi , Masaru Yamada
IPC分类号： C12P19/14 , C12R1/07 , C13K1/06 , C13K7/00
CPC分类号： C13K1/06 , C12P19/14 , C13K7/00
摘要： A liquid starch solution suitable for saccharification into a maltose-containing product is obtained by suspending starch in water, adding to the starch suspension a heat resistant .alpha.-amylase and a buffer, adjusting the resultant mixture to a pH value in the range of from 7.5 to 8.0, and thermally treating the resultant starch milk while repressing possible hydrolysis of starch molecules.
摘要翻译：通过将淀粉悬浮在水中得到适用于糖化成含麦芽糖的产品的液体淀粉溶液，向淀粉悬浮液中加入耐热的α-淀粉酶和缓冲液，将所得混合物调节至7.5的pH值至8.0，并对所得淀粉乳进行热处理，同时抑制淀粉分子的可能水解。

5. 发明授权

US08084826B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08084826B2
公开(公告)日：2011-12-27
申请号：US12364797
申请日：2009-02-03
申请人： Kenshi Kanegae , Masaru Yamada
发明人： Kenshi Kanegae , Masaru Yamada
IPC分类号： H01L21/66 , H01L21/76
CPC分类号： H01L21/823807 , H01L21/823412 , H01L21/823425 , H01L29/7843
摘要： An element larger than silicon is ion-implanted to a contact liner in an N-channel region to break constituent atoms of the contact liner in the N-channel region. An element larger than silicon is ion-implanted to the contact liner in a P-channel region to break constituent atoms of the contact liner, oxygen or the like is ion-implanted. Thereafter, heat treatment is performed to cause shrinkage of the contact liner in the N-channel region to form an n-channel contact liner, and to cause expansion of the contact liner in the P-channel region to form a p-channel contact liner.
摘要翻译：将大于硅的元素离子注入N沟道区域中的接触衬垫，以破坏N沟道区中的接触衬垫的构成原子。大于硅的元素被离子注入到P沟道区域中的接触衬垫上以破坏接触衬垫的构成原子，离子注入氧等。然后，进行热处理，使N沟道区域的接触衬垫收缩，形成n沟道接触衬垫，使P沟道区域内的接触衬垫膨胀，形成p沟道接触衬垫。

6. 发明申请

US20100159702A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20100159702A1
公开(公告)日：2010-06-24
申请号：US12717550
申请日：2010-03-04
申请人： Masaru YAMADA , Akihiko Tsudumitani
发明人： Masaru YAMADA , Akihiko Tsudumitani
IPC分类号： H01L21/76
CPC分类号： H01L21/76232
摘要： A first film and a second film are formed on a semiconductor substrate in this order. A resist pattern is formed on the second film. An opening is formed by removing the second film exposed between the resist pattern at a state where the second film remains on the bottom. A first removal preventing film is formed on the side wall of the opening and the residual film is removed at a state where the projecting part of the second film protruding from the side wall to the opening remains. The first film exposed in the opening is removed. A second removal preventing film is formed on the first removal preventing film and the surface of the semiconductor substrate exposed in the opening is removed at a state where the projecting part of the semiconductor substrate protruding from the side wall to the opening remains and a round part is formed at the projecting part of the semiconductor substrate. The semiconductor substrate exposed in the opening is further removed.
摘要翻译：依次在半导体衬底上形成第一膜和第二膜。在第二膜上形成抗蚀剂图案。通过在第二膜保持在底部的状态下去除在抗蚀剂图案之间暴露的第二膜而形成开口。在开口的侧壁上形成有第一去除防止膜，并且在从侧壁突出到开口的第二膜的突出部分残留的状态下，残留的膜被去除。去除暴露在开口中的第一个薄膜。在第一去除防止膜上形成第二防除膜，并且在从侧壁突出到开口的半导体衬底的突出部分残留的状态下，在开口中暴露的半导体衬底的表面被去除，并且圆形部分形成在半导体衬底的突出部分。在开口中暴露的半导体衬底被进一步去除。

7. 发明授权

US07696099B2 Manufacturing method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07696099B2
公开(公告)日：2010-04-13
申请号：US11600068
申请日：2006-11-16
申请人： Masaru Yamada , Akihiko Tsudumitani
发明人： Masaru Yamada , Akihiko Tsudumitani
IPC分类号： H01L21/302
CPC分类号： H01L21/76232
摘要： A first film and a second film are formed on a semiconductor substrate in this order. A resist pattern is formed on the second film. An opening is formed by removing the second film exposed between the resist pattern at a state where the second film remains on the bottom. A first removal preventing film is formed on the side wall of the opening and the residual film is removed at a state where the projecting part of the second film protruding from the sidewall to the opening remains. The first film exposed in the opening is removed. A second removal preventing film is formed on the first removal preventing film and the surface of the semiconductor substrate exposed in the opening is removed at a state where the projecting part of the semiconductor substrate protruding from the side wall to the opening remains and a round part is formed at the projecting part of the semiconductor substrate. The semiconductor substrate exposed in the opening is further removed.
摘要翻译：依次在半导体衬底上形成第一膜和第二膜。在第二膜上形成抗蚀剂图案。通过在第二膜保持在底部的状态下去除在抗蚀剂图案之间暴露的第二膜而形成开口。在开口的侧壁上形成有第一去除防护膜，并且在从侧壁突出到开口部的第二膜的突出部分残留的状态下去除残留膜。去除暴露在开口中的第一个薄膜。在第一去除防止膜上形成第二防除去除膜，并且在从侧壁突出到开口的半导体衬底的突出部分残留的状态下去除在开口中暴露的半导体衬底的表面，形成在半导体衬底的突出部分。在开口中暴露的半导体衬底被进一步去除。

8. 发明授权

US08293157B2 Method of manufacturing cellulose/gelatin composite viscose rayon filament 有权
标题翻译：制造纤维素/明胶复合粘胶人造纤维丝的方法
公开(公告)号：US08293157B2
公开(公告)日：2012-10-23
申请号：US11989392
申请日：2006-05-10
申请人： Masaru Yamada , Kunihiro Ohshima
发明人： Masaru Yamada , Kunihiro Ohshima
IPC分类号： D01F2/08
CPC分类号： D01F2/08 , D01F4/00
摘要： A method of manufacturing a cellulose/gelatin composite viscose rayon filament that is characterized by including a process in which a spinning process is carried out while a viscose spinning solution is mixed with a gelatin crosslinking solution, which makes it possible to produce a cellulose/gelatin composite viscose rayon having uniform strength and elongation without yarn disconnection.
摘要翻译：纤维素/明胶复合粘胶人造纤维丝的制造方法，其特征在于包括在粘胶纺丝溶液与明胶交联溶液混合的同时进行纺丝工序的方法，这使得可以生产纤维素/明胶复合粘胶人造丝具有均匀的强度和伸长率，不脱纱。

9. 发明授权

US07821138B2 Semiconductor device with an improved operating property 有权
标题翻译：具有改进的操作性能的半导体器件
公开(公告)号：US07821138B2
公开(公告)日：2010-10-26
申请号：US12405668
申请日：2009-03-17
申请人： Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
发明人： Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
IPC分类号： H01L23/48
CPC分类号： H01L21/76816 , H01L21/76843 , H01L21/76877 , H01L21/823807 , H01L21/823871 , H01L23/485 , H01L29/7842 , H01L29/7845 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor comprises an n-channel transistor forming region and a p-channel transistor forming region, which are disposed while being sectioned by an element isolation region. The stress caused by contact plugs in the n-channel transistor forming region and the stress caused by contact plugs in the p-channel transistor forming region are made different from each other. With this, it enables to increase the drive current of both the n-channel transistor and p-channel transistor without changing the dimensions of the active region and the element isolation region.
摘要翻译：半导体包括n沟道晶体管形成区域和p沟道晶体管形成区域，它们被元件隔离区域划分。在n沟道晶体管形成区域中由接触插塞引起的应力和由p沟道晶体管形成区域中的接触插塞引起的应力彼此不同。由此，能够增加n沟道晶体管和p沟道晶体管的驱动电流，而不改变有源区和元件隔离区的尺寸。

10. 发明申请

US20070277509A1 Exhaust gas purification system and method of purifying exhaust gas 审中-公开
标题翻译：废气净化系统及排气净化方法
公开(公告)号：US20070277509A1
公开(公告)日：2007-12-06
申请号：US11802943
申请日：2007-05-29
申请人： Jun Tahara , Masaru Yamada , Tadashi Toyota
发明人： Jun Tahara , Masaru Yamada , Tadashi Toyota
IPC分类号： F01N3/00
CPC分类号： F01N3/0253 , F01N3/0842 , F01N3/0885 , F01N9/002 , F01N9/005 , F01N13/0097 , F01N2570/04 , F01N2610/03 , F01N2610/1493 , F01N2900/1602 , F01N2900/1811 , F02D41/029 , F02D41/1446 , F02D41/1467 , F02D41/402 , F02D2200/0802 , F02D2200/0812 , F02M2200/06 , Y02T10/47
摘要： Decreases in the volume of intake air to an engine in response to environmental changes results in an increase in amount of PM emissions. In view of this situation, a correction coefficient of fuel supply interval is calculated based on the variation in amount of PM emissions to adjust a reference fuel supply interval in order to determine an target fuel supply interval. By adjusting the fuel supply interval, a fuel supply amount appropriate to the variation in amount of PM emissions, thereby preventing clogging of the injection hole of a supplemental fuel valve, while maintaining fuel economy.
摘要翻译：响应环境变化，发动机进气量减少导致PM排放量增加。鉴于这种情况，基于PM排放量的变化来计算燃料供给间隔的校正系数，以调整基准燃料供给间隔，以确定目标燃料供给间隔。通过调整燃料供给间隔，适合于PM排放量的变化的燃料供给量，从而防止补充燃料阀的喷射孔的堵塞，同时保持燃料经济性。

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