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1. 发明授权

US07821138B2 Semiconductor device with an improved operating property 有权
标题翻译：具有改进的操作性能的半导体器件
公开(公告)号：US07821138B2
公开(公告)日：2010-10-26
申请号：US12405668
申请日：2009-03-17
申请人： Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
发明人： Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
IPC分类号： H01L23/48
CPC分类号： H01L21/76816 , H01L21/76843 , H01L21/76877 , H01L21/823807 , H01L21/823871 , H01L23/485 , H01L29/7842 , H01L29/7845 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor comprises an n-channel transistor forming region and a p-channel transistor forming region, which are disposed while being sectioned by an element isolation region. The stress caused by contact plugs in the n-channel transistor forming region and the stress caused by contact plugs in the p-channel transistor forming region are made different from each other. With this, it enables to increase the drive current of both the n-channel transistor and p-channel transistor without changing the dimensions of the active region and the element isolation region.
摘要翻译：半导体包括n沟道晶体管形成区域和p沟道晶体管形成区域，它们被元件隔离区域划分。在n沟道晶体管形成区域中由接触插塞引起的应力和由p沟道晶体管形成区域中的接触插塞引起的应力彼此不同。由此，能够增加n沟道晶体管和p沟道晶体管的驱动电流，而不改变有源区和元件隔离区的尺寸。

2. 发明申请

US20060131662A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20060131662A1
公开(公告)日：2006-06-22
申请号：US11258034
申请日：2005-10-26
申请人： Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
发明人： Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
IPC分类号： H01L21/8238
CPC分类号： H01L21/76816 , H01L21/76843 , H01L21/76877 , H01L21/823807 , H01L21/823871 , H01L23/485 , H01L29/7842 , H01L29/7845 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor comprises an n-channel transistor forming region and a p-channel transistor forming region, which are disposed while being sectioned by an element isolation region. The stress caused by contact plugs in the n-channel transistor forming region and the stress caused by contact plugs in the p-channel transistor forming region are made different from each other. With this, it enables to increase the drive current of both the n-channel transistor and p-channel transistor without changing the dimensions of the active region and the element isolation region.
摘要翻译：半导体包括n沟道晶体管形成区域和p沟道晶体管形成区域，它们被元件隔离区域划分。在n沟道晶体管形成区域中由接触插塞引起的应力和由p沟道晶体管形成区域中的接触插塞引起的应力彼此不同。由此，能够增加n沟道晶体管和p沟道晶体管的驱动电流，而不改变有源区和元件隔离区的尺寸。

3. 发明申请

US20110001193A1 SEMICONDUCTOR DEVICE WITH AN IMPROVED OPERATING PROPERTY 审中-公开
标题翻译：具有改进的操作性能的半导体器件
公开(公告)号：US20110001193A1
公开(公告)日：2011-01-06
申请号：US12882643
申请日：2010-09-15
申请人： Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
发明人： Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
IPC分类号： H01L27/092
CPC分类号： H01L21/76816 , H01L21/76843 , H01L21/76877 , H01L21/823807 , H01L21/823871 , H01L23/485 , H01L29/7842 , H01L29/7845 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor comprises an n-channel transistor forming region and a p-channel transistor forming region, which are disposed while being sectioned by an element isolation region. The stress caused by contact plugs in the n-channel transistor forming region and the stress caused by contact plugs in the p-channel transistor forming region are made different from each other. With this, it enables to increase the drive current of both the n-channel transistor and p-channel transistor without changing the dimensions of the active region and the element isolation region.
摘要翻译：半导体包括n沟道晶体管形成区域和p沟道晶体管形成区域，它们被元件隔离区域划分。在n沟道晶体管形成区域中由接触插塞引起的应力和由p沟道晶体管形成区域中的接触插塞引起的应力彼此不同。由此，能够增加n沟道晶体管和p沟道晶体管的驱动电流，而不改变有源区和元件隔离区的尺寸。

4. 发明申请

US20090200582A1 SEMICONDUCTOR DEVICE WITH AN IMPROVED OPERATING PROPERTY 有权
标题翻译：具有改进的操作性能的半导体器件
公开(公告)号：US20090200582A1
公开(公告)日：2009-08-13
申请号：US12405668
申请日：2009-03-17
申请人： Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
发明人： Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
IPC分类号： H01L29/40
CPC分类号： H01L21/76816 , H01L21/76843 , H01L21/76877 , H01L21/823807 , H01L21/823871 , H01L23/485 , H01L29/7842 , H01L29/7845 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor comprises an n-channel transistor forming region and a p-channel transistor forming region, which are disposed while being sectioned by an element isolation region. The stress caused by contact plugs in the n-channel transistor forming region and the stress caused by contact plugs in the p-channel transistor forming region are made different from each other. With this, it enables to increase the drive current of both the n-channel transistor and p-channel transistor without changing the dimensions of the active region and the element isolation region.
摘要翻译：半导体包括n沟道晶体管形成区域和p沟道晶体管形成区域，它们被元件隔离区域划分。在n沟道晶体管形成区域中由接触插塞引起的应力和由p沟道晶体管形成区域中的接触插塞引起的应力彼此不同。由此，能够增加n沟道晶体管和p沟道晶体管的驱动电流，而不改变有源区和元件隔离区的尺寸。

5. 发明授权

US08354726B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08354726B2
公开(公告)日：2013-01-15
申请号：US11798528
申请日：2007-05-15
申请人： Masafumi Tsutsui
发明人： Masafumi Tsutsui
IPC分类号： H01L29/76
CPC分类号： H01L21/823412 , H01L21/823468 , H01L21/823481 , H01L21/823807 , H01L21/823864 , H01L21/823878 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L29/7842 , H01L29/7843
摘要： A semiconductor device includes: a first active region surrounded with an isolation region of a semiconductor substrate; a first gate electrode formed over the first active region and having a protrusion protruding on the isolation region; a first side-wall insulating film; an auxiliary pattern formed to be spaced apart in the gate width direction from the protrusion of the first gate electrode; a second side-wall insulating film; and a stress-containing insulating film containing internal stress and formed to cover the first gate electrode, the first side-wall insulating film, the auxiliary pattern, and the second side-wall insulating film. In this device, the distance between the first gate electrode and the auxiliary pattern is smaller than the sum total of: the sum of the thicknesses of the first and second side-wall insulating films; and the double of the thickness of the stress-containing insulating film.
摘要翻译：半导体器件包括：被半导体衬底的隔离区包围的第一有源区; 第一栅电极，形成在所述第一有源区上并具有在所述隔离区上突出的突起; 第一侧壁绝缘膜; 辅助图案形成为在栅极宽度方向上与第一栅电极的突起间隔开; 第二侧壁绝缘膜; 以及含有内应力的含应力的绝缘膜，形成为覆盖第一栅电极，第一侧壁绝缘膜，辅助图案和第二侧壁绝缘膜。在该装置中，第一栅电极和辅助图案之间的距离小于第一和第二侧壁绝缘膜的厚度之和的总和; 并且是含应力的绝缘膜的厚度的两倍。

6. 发明授权

US08265054B2 Wireless communication apparatus and wireless communicating method 失效
标题翻译：无线通信装置和无线通信方法
公开(公告)号：US08265054B2
公开(公告)日：2012-09-11
申请号：US12613002
申请日：2009-11-05
申请人： Masafumi Tsutsui
发明人： Masafumi Tsutsui
IPC分类号： H04B7/216
CPC分类号： H01Q3/2605 , H01Q1/246 , H01Q3/267 , H04B7/0617 , H04B7/0639 , H04L25/0204 , H04L25/03343 , H04L2025/03426 , H04L2025/03802
摘要： A wireless communication apparatus of a base station uses antennas for multiple systems, forms a multi-beam, transmits data to a mobile station, and includes a code book configured to store therein beamforming information; a pre-coder that reads the code book and executes a process of forming a given beam for the data; a control unit that, based on feedback information to correct variations in phase occurring at transmitting circuits respectively corresponding to each of the systems, performs control such that the beamforming information to correct the variations in phase is read from the code book; and a phase correcting unit that corrects a phase of the multi-beam formed by the pre-coder, based on the feedback information and such that relations among the phases of the multi-beam become substantially linear.
摘要翻译：基站的无线通信装置使用多个系统的天线，形成多波束，向移动台发送数据，并且包括配置为在其中存储波束成形信息的码本; 读取代码簿并执行为数据形成给定波束的处理的预编码器; 控制单元，其基于反馈信息来校正发生在与每个系统相对应的发射电路处的相位变化，执行控制，使得从码本中读取纠正相位变化的波束成形信息; 以及相位校正单元，其基于反馈信息校正由预编码器形成的多波束的相位，并且使得多波束的相位之间的关系变得基本上线性。

7. 发明申请

US20110073954A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110073954A1
公开(公告)日：2011-03-31
申请号：US12961168
申请日：2010-12-06
申请人： Susumu AKAMATSU , Masafumi Tsutsui , Yoshinori Takami
发明人： Susumu AKAMATSU , Masafumi Tsutsui , Yoshinori Takami
IPC分类号： H01L27/092
CPC分类号： H01L21/823462 , H01L21/823493 , H01L27/11
摘要： In a semiconductor substrate in a first section, a channel region having an impurity concentration peak in an interior of the semiconductor substrate is formed, and in the semiconductor substrate in a second section and a third section, channel regions having an impurity concentration peak at a position close to a surface of the substrate are formed. Then, extension regions are formed in the first section, the second section and the third section. After that, the substrate is thermally treated to eliminate defects produced in the extension regions. Then, using gate electrodes and side-wall spacers as a mask, source/drain regions are formed in the first section, the second section and the third section.
摘要翻译：在第一部分的半导体衬底中，形成在半导体衬底的内部具有杂质浓度峰值的沟道区，在第二部分和第三部分的半导体衬底中，在形成靠近基板表面的位置。然后，在第一部分，第二部分和第三部分中形成延伸区域。之后，对基板进行热处理以消除延伸区域中产生的缺陷。然后，使用栅电极和侧壁间隔物作为掩模，在第一部分，第二部分和第三部分中形成源极/漏极区域。

8. 发明申请

US20100248751A1 RELAY METHOD AND RELAY STATION 失效
标题翻译：继电器和继电器
公开(公告)号：US20100248751A1
公开(公告)日：2010-09-30
申请号：US12725794
申请日：2010-03-17
申请人： Masafumi Tsutsui
发明人： Masafumi Tsutsui
IPC分类号： H04W68/00 , H04B7/14
CPC分类号： H04B7/15535 , Y02D70/1262 , Y02D70/142 , Y02D70/446
摘要： A relay station that relays radio signals between a base transceiver station and a mobile station includes a downlink amplifier that amplifies a downlink signal from the base transceiver station to the mobile station, an uplink amplifier that amplifies an uplink signal from the mobile station to the base transceiver station, a paging response signal detection unit that detects a paging response signal with which the mobile station responds to a paging signal for paging the mobile station, and an amplification control unit that starts amplification control with respect to the downlink amplifier and the uplink amplifier when the paging response signal has been detected by the paging response signal detection unit.
摘要翻译：在基站和移动站之间中继无线电信号的中继站包括：放大从基站到移动台的下行链路信号的下行放大器，放大从移动站到基站的上行链路信号的上行放大器寻呼响应信号检测单元，其检测移动台对寻呼信号进行响应的寻呼响应信号，用于寻呼移动站;以及放大控制单元，其针对下行链路放大器和上行链路放大器开始放大控制当寻呼响应信号检测单元检测到寻呼响应信号时。

9. 发明授权

US07688909B2 Radio communication system, radio communication method, radio transmitter and radio receiver 有权
标题翻译：无线电通信系统，无线电通信方式，无线电发射机和无线电接收机
公开(公告)号：US07688909B2
公开(公告)日：2010-03-30
申请号：US11260808
申请日：2005-10-27
申请人： Masafumi Tsutsui
发明人： Masafumi Tsutsui
IPC分类号： H04B7/02 , H04L1/02
CPC分类号： H04B7/0413 , H04B7/0408 , H04B7/0689 , H04B7/0871
摘要： A radio transmitter includes an orthogonal transformation unit for carrying out an orthogonal transformation on pilot signals having orthogonal relation to each other between transmission antennas and a pilot multiplexing unit multiplexing the pilot signals and transmission data, and a radio receiver includes a channel estimation unit obtaining a channel estimate of a directive multibeam for each of reception antennas, an inverse transformation unit carrying out an inverse transformation of the orthogonal transformation on the obtained channel estimate and a received signal processing unit selectively conducting first processing based on the beam channel estimate in the first mode or second processing based on the channel estimate obtained by the inverse transformation unit in the second mode. This commonizes a common pilot for MIMO (second mode) and individual pilots for AAA (first mode), thus realizing the coexistence of MIMO and AAA without leading to a reduction of throughput.
摘要翻译：无线发射机包括正交变换单元，用于对发送天线之间具有正交关系的导频信号和对导频信号和发送数据进行复用的导频复用单元进行正交变换，无线接收机包括信道估计单元，获得用于每个接收天线的指令多波束的信道估计，对所获得的信道估计执行正交变换的逆变换的逆变换单元和基于第一模式中的波束信道估计选择性地进行第一处理的接收信号处理单元或基于由第二模式中的逆变换单元获得的信道估计的第二处理。这通用于用于MIMO（第二模式）和用于AAA（第一模式）的单独导频的公共导频，从而实现MIMO和AAA的共存，而不会导致吞吐量的降低。

10. 发明申请

US20070272958A1 Solid-state image sensing device and manufacturing method thereof 失效
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US20070272958A1
公开(公告)日：2007-11-29
申请号：US11700000
申请日：2007-01-31
申请人： Makoto Misaki , Masafumi Tsutsui
发明人： Makoto Misaki , Masafumi Tsutsui
IPC分类号： H01L31/113
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14689
摘要： Pixel portions each of which has a charge storage portion formed in a semiconductor substrate 11 and a transfer gate for transferring charges stored in the charge storage portion are isolated from each other by a device isolation region in the semiconductor substrate. A buried gate electrically connected to the transfer gate is embedded in the device isolation region. The buried gate includes a gate dielectric film and gate electrode formed in a trench of the semiconductor substrate.
摘要翻译：每个具有形成在半导体衬底11中的电荷存储部分的像素部分和用于转移存储在电荷存储部分中的电荷的传输栅极通过半导体衬底中的器件隔离区域相互隔离。电连接到传输门的掩埋栅极嵌入在器件隔离区域中。掩埋栅极包括形成在半导体衬底的沟槽中的栅极电介质膜和栅电极。

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