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1. 发明授权

US08440388B2 Method to restore hydrophobicity in dielectric films and materials 有权
标题翻译：恢复介电薄膜和材料疏水性的方法
公开(公告)号：US08440388B2
公开(公告)日：2013-05-14
申请号：US11287992
申请日：2005-11-28
申请人： Nigel P. Hacker , Michael Thomas , James S. Drage
发明人： Nigel P. Hacker , Michael Thomas , James S. Drage
IPC分类号： G03F7/00
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02304 , H01L21/02337 , H01L21/0234 , H01L21/02343 , H01L21/02359 , H01L21/02362 , H01L21/3105 , H01L21/31058 , H01L21/3122 , H01L21/31695 , H01L21/7682 , H01L21/76826 , H01L21/76831 , Y10T428/24802
摘要： Silica dielectric films, whether nanoporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. The invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.
摘要翻译：无论是纳米多孔泡沫二氧化硅电介质还是无孔二氧化硅电介质，二氧化硅电介质膜都容易被制造方法和试剂所破坏，这些方法和试剂可以从电介质表面减少或去除疏水性质。本发明提供了赋予衬底上存在的这种损坏的二氧化硅介电膜的疏水性的方法。本发明还提供了用于赋予新的和损坏的二氧化硅介电膜的疏水性的基于等离子体的方法。还提供了通过本发明方法制备的半导体器件。

2. 发明授权

US07012125B2 Spin-on-glass anti-reflective coatings for photolithography 有权
公开(公告)号：US07012125B2
公开(公告)日：2006-03-14
申请号：US10012649
申请日：2001-11-05
申请人： Joseph Kennedy , Teresa Baldwin , Nigel P. Hacker , Richard Spear
发明人： Joseph Kennedy , Teresa Baldwin , Nigel P. Hacker , Richard Spear
IPC分类号： C08G77/18
CPC分类号： G03F7/091 , C03C17/008 , C03C17/30 , C08K5/0008 , C09D183/04 , C09D183/06 , C09D183/08 , H01L21/0276 , Y10T428/31663 , C08L83/04 , C08L2666/28
摘要： Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic dyes incorporated into spin-on-glass materials. Suitable dyes are strongly absorbing over wavelength ranges around wavelengths such as 248 nm and 193 nm that may be used in photolithography. A method of making dyed spin-on-glass materials includes combining one or more organic dyes with alkoxysilane reactants during synthesis of the spin-on-glass materials.

3. 发明授权

US06962727B2 Organosiloxanes 失效
标题翻译：有机硅氧烷
公开(公告)号：US06962727B2
公开(公告)日：2005-11-08
申请号：US10161561
申请日：2002-06-03
申请人： William B. Bedwell , Nigel P. Hacker , Roger Y. Leung , Nancy Iwamoto , Jan Nedbal , Songyuan Xie , Lorenza Moro , Shyama P. Mukherjee
发明人： William B. Bedwell , Nigel P. Hacker , Roger Y. Leung , Nancy Iwamoto , Jan Nedbal , Songyuan Xie , Lorenza Moro , Shyama P. Mukherjee
IPC分类号： C08G77/20 , C08G77/04 , C08G77/12 , C09D183/04 , C09J183/04 , G03F7/075 , H01L21/312 , H01L21/768 , H01L23/522 , H01L23/532 , C23C16/56
CPC分类号： C09D183/04 , C08G77/04 , C08G77/12 , C08G77/20 , G03F7/0751 , H01L21/02126 , H01L21/02211 , H01L21/02282 , H01L21/3121 , H01L21/3122 , H01L21/76807 , H01L21/76829 , H01L21/76835 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： The present invention provides an organosiloxane comprising at least 80 weight percent of Formula 1: [Y0.01-1.0SiO1.5-2]a{Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c (where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula 1; b is from 2 percent to 50 percent of Formula 1; and c is from 20 percent to 80 percent of Formula 1. The present organosiloxane may be used as ceramic binder, high temperature encapsulant, and fiber matrix binder. The present composition is also useful as an adhesion promoter in that it exhibits good adhesive properties when coupled with other materials in non-microelectronic or microelectronic applications. Preferably, the present compositions are used in microelectronic applications as etch stops, hardmasks, and dielectrics.
摘要翻译：本发明提供了包含至少80重量％的式1的有机硅氧烷：[Y 0.01-1.0 1.5-2]（Z 0.01-1.0 SiO <1.5-2 （其中Y是芳基; Z是烯基; a是式1的15％到70％; b是2％到50％的式1; c是来自本发明的有机硅氧烷可用作陶瓷粘合剂，高温密封剂和纤维基质粘合剂，本发明的组合物也可用作粘合促进剂，因为当与其它材料结合时它具有良好的粘合性能优选地，本发明的组合物用作微电子应用中的蚀刻停止层，硬掩模和电介质。

4. 发明授权

US06838124B2 Deposition of fluorosilsesquioxane films 失效
标题翻译：氟倍半硅氧烷薄膜的沉积
公开(公告)号：US06838124B2
公开(公告)日：2005-01-04
申请号：US10150445
申请日：2002-05-16
申请人： Nigel P. Hacker
发明人： Nigel P. Hacker
IPC分类号： B05D5/12 , B05D7/24 , C01B33/113 , C07F7/12 , C08G77/24 , C09D4/00 , C09D183/08 , C23C16/40 , H01L21/312 , H01L21/316
CPC分类号： H01L21/31629 , C01B33/113 , C09D4/00 , C09D183/08 , C23C16/401 , H01L21/02131 , H01L21/02203 , H01L21/02216 , H01L21/02271 , H01L21/3124 , Y10T428/249969 , Y10T428/31663 , C08G77/24
摘要： There is provided an array of fluoro-substituted silsesquioxane thin film precursors having a structure wherein fluoro groups are bonded to the silicon atoms of a silsesquioxane cage. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [F—SiO1.5]x[H—SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. Also provided are films made from these precursors and objects comprising these films.
摘要翻译：提供了氟取代的倍半硅氧烷薄膜前体的阵列，其具有氟基与倍半硅氧烷笼的硅原子结合的结构。在第一方面，本发明提供一种组合物，其包含具有式[F-SiO 1.5] x [H-SiO 1.5] y的汽化材料，其中x + y = n，n为2至30的整数，x是1和n之间的整数，y是0和n之间的整数。还提供了由这些前体制成的膜和包含这些膜的物体。

5. 发明授权

US06361820B1 Dielectric films from organohydridosiloxane resins with high organic content 失效
标题翻译：具有高有机含量的有机氢硅氧烷树脂的介电薄膜
公开(公告)号：US06361820B1
公开(公告)日：2002-03-26
申请号：US09609499
申请日：2000-06-30
申请人： Nigel P. Hacker , Scott P. Lefferts , Lisa K. Figge , Michael D. Slessor
发明人： Nigel P. Hacker , Scott P. Lefferts , Lisa K. Figge , Michael D. Slessor
IPC分类号： B05D302
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3121 , H01L21/3122 , Y10T428/265 , Y10T428/31663
摘要： A method of making a dielectric film on a substrate from a composition containing an organohydridosiloxane resin is presented. The organohydridosiloxane resins have a cage conformation and 40 mole percent or greater of an organic substituent. The process of making a dielectric film includes forming a solution of a solvent and the organohydridosiloxane resin, dispensing the solution on a substrate, spinning the substrate, baking the substrate to remove the solvent, and curing the substrate to form the dielectric film. The dielectric films of the present invention exhibit dielectric constants of approximately 2.8 or lower.
摘要翻译：提出了一种从含有机硅氧烷树脂的组合物在基片上制作电介质膜的方法。有机氢硅氧烷树脂具有笼形构象和40摩尔％以上的有机取代基。制造电介质膜的方法包括形成溶剂和有机氢硅氧烷树脂的溶液，将溶液分配在基材上，纺丝基板，烘烤基板以除去溶剂，并固化基板以形成电介质膜。本发明的电介质膜的介电常数为2.8以下。

6. 发明授权

US06358559B1 Dielectric films from organohydridosiloxane resins with low organic content 失效
标题翻译：具有低有机含量的有机氢硅氧烷树脂的介电薄膜
公开(公告)号：US06358559B1
公开(公告)日：2002-03-19
申请号：US09609437
申请日：2000-06-30
申请人： Nigel P. Hacker , Scott P. Lefferts , Lisa K. Figge , Michael D. Slessor
发明人： Nigel P. Hacker , Scott P. Lefferts , Lisa K. Figge , Michael D. Slessor
IPC分类号： B05D302
CPC分类号： C08G77/04 , C08G77/12 , G03F7/0751 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3121 , H01L21/3122 , H01L21/76807 , H01L21/76829 , H01L21/76835 , Y10T428/265 , Y10T428/31663
摘要： A method of making a dielectric film on a substrate from a composition containing an organohydridosiloxane resin is presented. The organohydridosiloxane resins have a cage conformation and up to 40 mole percent of an organic substituent. The process of making a dielectric film includes forming a solution of a solvent and the organohydridosiloxane resin, dispensing the solution on a substrate, spinning the substrate, baking the substrate to remove the solvent, and curing the substrate to form the dielectric film. The dielectric films of the present invention exhibit dielectric constants of approximately 3 or lower.
摘要翻译：提出了一种从含有机硅氧烷树脂的组合物在基片上制作电介质膜的方法。有机氢硅氧烷树脂具有笼形构象和至多40摩尔％的有机取代基。制造电介质膜的方法包括形成溶剂和有机氢硅氧烷树脂的溶液，将溶液分配在基材上，纺丝基板，烘烤基板以除去溶剂，并固化基板以形成电介质膜。本发明的电介质膜的介电常数为3以下。

7. 发明授权

US6020410A Stable solution of a silsesquioxane or siloxane resin and a silicone solvent 失效
标题翻译：倍半硅氧烷或硅氧烷树脂和硅氧烷溶剂的稳定溶液
公开(公告)号：US6020410A
公开(公告)日：2000-02-01
申请号：US955802
申请日：1997-10-22
申请人： Nigel P. Hacker , Todd Krajewski , Scott Lefferts , Gary Davis
发明人： Nigel P. Hacker , Todd Krajewski , Scott Lefferts , Gary Davis
IPC分类号： C08K5/5415 , C08J3/09 , C08L83/05 , C09D183/04 , C09D183/05 , C08K5/54
CPC分类号： C08J3/098 , C08J3/091 , C08J2383/04
摘要： Storage solutions of silsesquioxane and siloxane polymers are obtained by means of a silicon containing solvent composition. The solution has at least one polymer having a formula of [(HSiO.sub.1.5).sub.x O.sub.y ].sub.n, (HSiO.sub.1.5).sub.n, [(HSiO.sub.1.5).sub.x O.sub.y (RSiO.sub.1.5).sub.z ].sub.n, [(HSiO.sub.1.5).sub.x (RSiO.sub.1.5).sub.y ].sub.n or [(HSiO.sub.1.5).sub.x O.sub.y (RSiO.sub.1.5).sub.z ].sub.n wherein x=about 6 to about 20, y=1 to about 3, z=about 6 to about 20, n=1 to about 4,000, and each R is independently H, C.sub.1 to C.sub.8 alkyl or C.sub.6 to C.sub.12 aryl. The solvent has the formula of (CH.sub.3).sub.3 Si--O--[Si(CH.sub.3).sub.2 ].sub.a --Si(CH.sub.3).sub.3, (CH.sub.3 CH.sub.2)Si--O--[Si(CH.sub.3 CH.sub.2).sub.2 ].sub.a --SiCH.sub.3 CH.sub.2).sub.3, R.sub.3 Si--O--[SiR'.sub.2 ].sub.a --SiR.sub.3, [O--Si(CH.sub.3).sub.2 ].sub.b, [O--Si(CH.sub.3 CH.sub.2).sub.2 ].sub.b or [O--SiR'.sub.2 ].sub.n wherein a=0-5, b=3-5, and each R' is independently H or C.sub.1 to C.sub.8 alkyl.
摘要翻译：通过含硅溶剂组合物获得倍半硅氧烷和硅氧烷聚合物的储存溶液。该溶液具有至少一种具有式[（HSiO 1.5）x O y] n，（HSiO 1.5）n，[（HSiO 1.5）x O y（RSiO 1.5）]]，[（HSiO 1.5） x（RSiO1.5）y] n或[（HSiO1.5）xOy（RSiO1.5）z] n其中x =约6至约20，y = 1至约3，z =约6至约20，n = 1至约4,000，并且每个R独立地为H，C 1至C 8烷基或C 6至C 12芳基。溶剂具有式（CH3）3Si-O- [Si（CH3）2] a-Si（CH3）3，（CH3CH2）Si-O- [Si（CH3CH2）2] a-SiCH3CH2）3，R3Si- O- [SiR'2] a-SiR3，[O-Si（CH3）2] b，[O-Si（CH3CH2）2] b或[O-SiR'2] n，其中a = 0-5，b = 3-5，每个R'独立地为H或C 1至C 8烷基。

8. 发明授权

US4948629A Deposition of diamond films 失效
标题翻译：沉积金刚石膜
公开(公告)号：US4948629A
公开(公告)日：1990-08-14
申请号：US309521
申请日：1989-02-10
申请人： Nigel P. Hacker , George W. Tyndall, III
发明人： Nigel P. Hacker , George W. Tyndall, III
IPC分类号： H01L21/205 , C23C16/27 , C30B25/02 , C30B29/04 , H01L21/314
CPC分类号： C23C16/27 , C23C16/277 , C30B25/02 , C30B29/04
摘要： Diamond films are deposited at substrates below temperatures of 400.degree. C. by chemical vapor deposition using a high powered pulsed laser and a vapor which is an aliphatic carboxylic acid or an aromatic carboxylic anhydride.

9. 发明授权

US06956097B2 Spin-on-glass anti-reflective coatings for photolithography 有权
公开(公告)号：US06956097B2
公开(公告)日：2005-10-18
申请号：US10076846
申请日：2002-02-14
申请人： Joseph Kennedy , Teresa Baldwin , Nigel P. Hacker , Richard Spear
发明人： Joseph Kennedy , Teresa Baldwin , Nigel P. Hacker , Richard Spear
IPC分类号： G03F7/004 , C03C17/00 , C03C17/30 , C07F7/18 , C08K5/00 , C09D7/12 , C09D183/04 , C09D183/06 , C09D183/08 , G03C1/492 , G03F7/075 , G03F7/09 , G03F7/11 , H01L21/027 , C08G77/12
CPC分类号： G03F7/091 , C03C17/008 , C03C17/30 , C08K5/0008 , C09D183/04 , C09D183/06 , C09D183/08 , G03F7/0752 , H01L21/0276 , Y10T428/31663 , C08L83/04 , C08L2666/28
摘要： Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.

10. 发明授权

US06512071B1 Organohydridosiloxane resins with high organic content 失效
公开(公告)号：US06512071B1
公开(公告)日：2003-01-28
申请号：US09611528
申请日：2000-06-30
申请人： Nigel P. Hacker , Scott Lefferts , Lisa Figge
发明人： Nigel P. Hacker , Scott Lefferts , Lisa Figge
IPC分类号： C08G7708
CPC分类号： H01L21/02126 , C08G77/12 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An organohydridosiloxane polymer having a cage conformation, at least approximately 40 Mole percent carbon containing substituents and a dielectric constant of less than about 2.7 is presented. Each silicon atom of the cage polymer is bonded to at least three oxygen atoms and to either a hydrogen atom or an organic substituent. By providing such a caged structure with essentially no hydroxyl or alkoxy substituents, either on the polymer backbone or at terminal silicon atoms, essentially no chain lengthening polymerization can occur in solution. Such organohydridosiloxane resins having a molecular weight in the range from about 400 to about 200,000 atomic mass units were formed using a dual phase solvent system and either a solid phase or phase transfer catalyst to assist the condensation of hydridotrihalosilane with at least one organotrihalosilane.

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