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1. 发明授权

US06605362B2 Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography 失效
公开(公告)号：US06605362B2
公开(公告)日：2003-08-12
申请号：US10012651
申请日：2001-11-05
申请人： Teresa Baldwin , Mary Richey , James S. Drage , Hui-Jung Wu , Richard Spear
发明人： Teresa Baldwin , Mary Richey , James S. Drage , Hui-Jung Wu , Richard Spear
IPC分类号： B32B2520
CPC分类号： C09D4/00 , C03C17/30 , C07F7/1804 , C09D183/04 , Y10T428/31663 , C08G77/04 , C08L2666/44
摘要： An absorbing ether-like compound including a siliconethoxy, silicondiethoxy, or silicontriethoxy species attached to a naphthalene or anthracene chromophore via an oxygen linkage is used as an organic light-absorbing compound. The absorbing ether-like compound is incorporated into spin-on glass materials to provide anti-reflective coating materials for deep ultraviolet photolithography. A method of synthesizing the light-absorbing ether compounds is based on the reaction of an alcohol-substituted chromophore with an acetoxysilicon compound in the presence of alcohol. A method of making absorbing spin-on-glass materials including the absorbing ether-like compounds is also provided.

2. 发明授权

US06368400B1 Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography 失效
标题翻译：用于光刻的旋涂玻璃防反射涂层的吸收化合物
公开(公告)号：US06368400B1
公开(公告)日：2002-04-09
申请号：US09617365
申请日：2000-07-17
申请人： Teresa Baldwin , Mary Richey , James S. Drage , Hui-Jung Wu , Richard Spear
发明人： Teresa Baldwin , Mary Richey , James S. Drage , Hui-Jung Wu , Richard Spear
IPC分类号： C08L8306
CPC分类号： C09D4/00 , C03C17/30 , C07F7/1804 , C09D183/04 , Y10T428/31663 , C08G77/04 , C08L2666/44
摘要： An absorbing ether-like compound including a siliconethoxy, silicondiethoxy, or silicontriethoxy species attached to a naphthalene or anthracene chromophore via an oxygen linkage is used as an organic light-absorbing compound. The absorbing ether-like compound is incorporated into spin-on glass materials to provide anti-reflective coating materials for deep ultraviolet photolithography. A method of synthesizing the light-absorbing ether compounds is based on the reaction of an alcohol-substituted chromophore with an acetoxysilicon compound in the presence of alcohol. A method of making absorbing spin-on-glass materials including the absorbing ether-like compounds is also provided.
摘要翻译：作为有机吸光性化合物，使用包含通过氧键与萘或蒽发色团连接的硅氧乙基，硅氧基乙氧基或硅三乙氧基的吸收醚状化合物。吸收醚类化合物被掺入旋涂玻璃材料中以提供用于深紫外光刻的抗反射涂层材料。合成光吸收醚化合物的方法是基于醇取代的发色团与醇氧化硅化合物在醇存在下的反应。还提供了制备吸收性旋涂玻璃材料的方法，包括吸收醚类化合物。

3. 发明授权

US08440388B2 Method to restore hydrophobicity in dielectric films and materials 有权
标题翻译：恢复介电薄膜和材料疏水性的方法
公开(公告)号：US08440388B2
公开(公告)日：2013-05-14
申请号：US11287992
申请日：2005-11-28
申请人： Nigel P. Hacker , Michael Thomas , James S. Drage
发明人： Nigel P. Hacker , Michael Thomas , James S. Drage
IPC分类号： G03F7/00
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02304 , H01L21/02337 , H01L21/0234 , H01L21/02343 , H01L21/02359 , H01L21/02362 , H01L21/3105 , H01L21/31058 , H01L21/3122 , H01L21/31695 , H01L21/7682 , H01L21/76826 , H01L21/76831 , Y10T428/24802
摘要： Silica dielectric films, whether nanoporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. The invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.
摘要翻译：无论是纳米多孔泡沫二氧化硅电介质还是无孔二氧化硅电介质，二氧化硅电介质膜都容易被制造方法和试剂所破坏，这些方法和试剂可以从电介质表面减少或去除疏水性质。本发明提供了赋予衬底上存在的这种损坏的二氧化硅介电膜的疏水性的方法。本发明还提供了用于赋予新的和损坏的二氧化硅介电膜的疏水性的基于等离子体的方法。还提供了通过本发明方法制备的半导体器件。

4. 发明授权

US06670022B1 Nanoporous dielectric films with graded density and process for making such films 失效
公开(公告)号：US06670022B1
公开(公告)日：2003-12-30
申请号：US09706028
申请日：2000-11-03
申请人： Stephen Wallace , Douglas M. Smith , Teresa Ramos , Kevin H. Rodrick , James S. Drage
发明人： Stephen Wallace , Douglas M. Smith , Teresa Ramos , Kevin H. Rodrick , James S. Drage
IPC分类号： B32B300
CPC分类号： H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/7682 , H01L23/5222 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , Y10T428/24479 , Y10T428/24595 , Y10T428/249953 , Y10T428/249969 , H01L2924/00
摘要： The present invention relates to nanoporous dielectric films and to a process for their manufacture. A substrate having a plurality of raised lines on its surface is provided with a relatively high porosity, low dielectric constant, silicon containing polymer composition positioned between the raised lines and a relatively low porosity, high dielectric constant, silicon containing composition positioned on the lines.

5. 发明授权

US06489030B1 Low dielectric constant films used as copper diffusion barrier 失效
标题翻译：用作铜扩散阻挡层的低介电常数膜
公开(公告)号：US06489030B1
公开(公告)日：2002-12-03
申请号：US09549390
申请日：2000-04-14
申请人： Hui-Jung Wu , James S. Drage
发明人： Hui-Jung Wu , James S. Drage
IPC分类号： B32B904
CPC分类号： H01L21/02118 , C09D183/16 , H01L21/0212 , H01L21/02126 , H01L21/02164 , H01L21/02282 , H01L21/312 , H01L21/3121 , H01L21/76825 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y10T428/31663 , H01L2924/00
摘要： A microelectronic device having a cured polycarbosilane diffusion barrier is disclosed. A microelectronic device has a substrate, a dielectric layer on the substrate and metal filled vias formed through the dielectric layer. A covering of a cured polycarbosilane diffusion barrier is on the metal filled vias and the dielectric layer.
摘要翻译：公开了具有固化的聚碳硅烷扩散阻挡层的微电子器件。微电子器件具有衬底，衬底上的电介质层和通过电介质层形成的金属填充的通孔。固化的聚碳硅烷扩散阻挡层的覆盖物在金属填充的通孔和电介质层上。

6. 发明授权

US06318124B1 Nanoporous silica treated with siloxane polymers for ULSI applications 失效
标题翻译：用硅氧烷聚合物处理的纳米二氧化硅用于ULSI应用
公开(公告)号：US06318124B1
公开(公告)日：2001-11-20
申请号：US09379484
申请日：1999-08-23
申请人： Nicole Rutherford , James S. Drage , Ron Katsanes , Hui-Jung Wu , Teresa Ramos
发明人： Nicole Rutherford , James S. Drage , Ron Katsanes , Hui-Jung Wu , Teresa Ramos
IPC分类号： C03C1730
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/02362 , H01L21/31051 , H01L21/31695 , Y10S65/11
摘要： A surface-coated nanoporous silica dielectric film that is prepared by a process comprising the steps of forming a nanoporous silica dielectric coating on a substrate, and coating the formed nanoporous silica dielectric film with a coating composition comprising a polymer precursor, under conditions effective to form a strength-enhancing and/or hydrophobicity enhancing layer on the treated nanoporous silica dielectric film.
摘要翻译：一种表面涂覆的纳米多孔二氧化硅电介质膜，其通过以下步骤制备，所述方法包括以下步骤：在基底上形成纳米多孔二氧化硅电介质涂层，并在包含聚合物前体的涂层组合物上涂覆形成的纳米多孔硅介电膜，经处理的纳米多孔二氧化硅电介质膜上的强度增强和/或疏水性增强层。

7. 发明授权

US07858294B2 Method to restore hydrophobicity in dielectric films and materials 有权
标题翻译：恢复介电薄膜和材料疏水性的方法
公开(公告)号：US07858294B2
公开(公告)日：2010-12-28
申请号：US11784081
申请日：2007-04-05
申请人： Nigel P. Hacker , Michael Thomas , James S. Drage
发明人： Nigel P. Hacker , Michael Thomas , James S. Drage
IPC分类号： H01L21/465
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02304 , H01L21/02337 , H01L21/0234 , H01L21/02343 , H01L21/02359 , H01L21/02362 , H01L21/3105 , H01L21/31058 , H01L21/3122 , H01L21/31695 , H01L21/7682 , H01L21/76826 , H01L21/76831 , Y10T428/24802
摘要： Silica dielectric films, whether nanoporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. The invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.
摘要翻译：无论是纳米多孔泡沫二氧化硅电介质还是无孔二氧化硅电介质，二氧化硅电介质膜都容易被制造方法和试剂所破坏，这些方法和试剂可以从电介质表面减少或去除疏水性质。本发明提供了赋予衬底上存在的这种损坏的二氧化硅介电膜的疏水性的方法。本发明还提供了用于赋予新的和损坏的二氧化硅介电膜的疏水性的基于等离子体的方法。还提供了通过本发明方法制备的半导体器件。

8. 发明授权

US06914114B2 Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography 有权
标题翻译：用于光刻的旋涂玻璃防反射涂层的吸收化合物
公开(公告)号：US06914114B2
公开(公告)日：2005-07-05
申请号：US10428807
申请日：2003-04-30
申请人： Teresa Baldwin , Mary Richey , James S. Drage , Hui-Jung Wu , Richard Spear
发明人： Teresa Baldwin , Mary Richey , James S. Drage , Hui-Jung Wu , Richard Spear
IPC分类号： G03F7/11 , C03C17/30 , C07F7/18 , C08K5/5415 , C08L83/05 , C09D4/00 , C09D183/04 , H01L21/027 , C08G77/00
CPC分类号： C09D4/00 , C03C17/30 , C07F7/1804 , C09D183/04 , Y10T428/31663 , C08G77/04 , C08L2666/44
摘要： An absorbing ether-like compound including a siliconethoxy, silicondiethoxy, or silicontriethoxy species attached to a naphthalene or anthracene chromophore via an oxygen linkage is used as an organic light-absorbing compound. The absorbing ether-like compound is incorporated into spin-on glass materials to provide anti-reflective coating materials for deep ultraviolet photolithography. A method of synthesizing the light-absorbing ether compounds is based on the reaction of an alcohol-substituted chromophore with an acetoxysilicon compound in the presence of alcohol. A method of making absorbing spin-on-glass materials including the absorbing ether-like compounds is also provided.
摘要翻译：作为有机吸光性化合物，使用包含通过氧键与萘或蒽发色团连接的硅氧乙基，硅氧基乙氧基或硅三乙氧基的吸收醚状化合物。吸收醚类化合物被掺入旋涂玻璃材料中以提供用于深紫外光刻的抗反射涂层材料。合成光吸收醚化合物的方法是基于醇取代的发色团与醇氧化硅化合物在醇存在下的反应。还提供了制备吸收性旋涂玻璃材料的方法，包括吸收醚类化合物。

9. 发明授权

US06797607B2 Contact planarization using nanoporous silica materials 失效
标题翻译：使用纳米多孔二氧化硅材料的接触平面化
公开(公告)号：US06797607B2
公开(公告)日：2004-09-28
申请号：US10146007
申请日：2001-10-26
申请人： Denis H. Endisch , James S. Drage
发明人： Denis H. Endisch , James S. Drage
IPC分类号： H01L214763
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/31051
摘要： A process for forming a substantially planarized nanoporous dielectric silica coating on a substrate suitable for preparing a semiconductor device, and semiconductor devices produced by the methods of the invention. The process includes the steps of applying a composition that includes at least one silicon-based dielectric precursor to a substrate, and then, (a) gelling or aging the applied coating, (b) contacting the coating with a planarization object with sufficient pressure to transfer a planar impression to the coating without substantially impairing formation of desired nanometer-scale pore structure, (c) separating the planarized coating from the planarization object, (d) curing said planarized coating; wherein steps (a)-(d) are conducted in any one of the following sequences: (a), (b), (c) and (d); (a), (d), (b) and (c); (b), (a), (d) and (c); and (b), (c), (a) and (d).
摘要翻译：在适于制备半导体器件的衬底上形成基本上平坦化的纳米多孔介电二氧化硅涂层的方法，以及通过本发明的方法制造的半导体器件。该方法包括以下步骤：将包含至少一种硅基电介质前体的组合物施加到基底上，然后（a）使所涂覆的涂层凝胶化或老化，（b）使涂层与平坦化物体接触足够的压力，将平面印模转移到涂层，而不会基本上损害所需的纳米尺度孔结构的形成，（c）将平坦化涂层与平坦化物体分离，（d）固化所述平坦化涂层;其中步骤（a） - （d）（a），（d），（b）和（c）;（b），（a），（d））和（c）; 和（b），（c），（a）和（d）。

10. 发明授权

US06589889B2 Contact planarization using nanoporous silica materials 失效
标题翻译：使用纳米多孔二氧化硅材料的接触平面化
公开(公告)号：US06589889B2
公开(公告)日：2003-07-08
申请号：US09392413
申请日：1999-09-09
申请人： Denis H. Endisch , James S. Drage
发明人： Denis H. Endisch , James S. Drage
IPC分类号： H01L2131
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/31051
摘要： A process for forming a substantially planarized nanoporous dielectric silica coating on a substrate suitable for preparing a semiconductor device, and semiconductor devices produced by the methods of the invention. The process includes the steps of applying a composition that includes at least one silicon-based dielectric precursor to a substrate, and then, (a) gelling or aging the applied coating, (b) contacting the coating with a planarization object with sufficient pressure to transfer a planar impression to the coating without substantially impairing formation of desired nanometer-scale pore structure, (c) separating the planarized coating from the planarization object, (d) curing said planarized coating; wherein steps (a)-(d) are conducted in any one of the following sequences: (a), (b), (c) and (d); (a), (d), (b) and (c); (b), (a), (d) and (c); and (b), (c), (a) and (d).
摘要翻译：在适于制备半导体器件的衬底上形成基本上平坦化的纳米多孔介电二氧化硅涂层的方法，以及通过本发明的方法制造的半导体器件。该方法包括以下步骤：将包含至少一种硅基电介质前体的组合物施加到基底上，然后（a）使所涂覆的涂层凝胶化或老化，（b）使涂层与平坦化物体接触足够的压力，将平面印模转移到涂层，而不会基本上损害所需的纳米尺度孔结构的形成，（c）将平面化涂层与平坦化物体分离，（d）固化所述平坦化涂层;其中步骤（a） - （d）（a），（d），（b）和（c）;（b），（a），（d））和（c）; 和（b），（c），（a）和（d）。

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