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1. 发明授权

US08573579B2 Biasing a pre-metalized non-conductive substrate 有权
标题翻译：偏置预金属化的非导电衬底
公开(公告)号：US08573579B2
公开(公告)日：2013-11-05
申请号：US12715144
申请日：2010-03-01
申请人： Chang Bok Yi , Tatsuru Tanaka , Chun Wai Joseph Tong , Hongling Liu , Paul S. McLeod
发明人： Chang Bok Yi , Tatsuru Tanaka , Chun Wai Joseph Tong , Hongling Liu , Paul S. McLeod
IPC分类号： B25B5/16
CPC分类号： G11B5/8404 , C23C14/345 , C23C14/50
摘要： Methods and apparatus are provided for static-biasing a pre-metalized non-conductive substrate within a process chamber. A substrate holder that holds a pre-metalized non-conductive substrate is engaged by a lift mechanism that provides movement of the substrate in a first, upward direction to a contact position within the process chamber and in a second direction to a non-contact position. When the substrate holder is moved to the contact position, the substrate electrically engages a conductive spring-loaded compliance mechanism that is mounted in a fixed position within the process chamber. The spring-loaded compliance mechanism is connected to a bias-voltage feed-through for the process chamber that applies a bias voltage to the substrate via the spring-loaded compliance mechanism.
摘要翻译：提供了用于在处理室内静态偏置预金属化非导电衬底的方法和装置。保持预金属化非导电基板的基板保持器由提升机构接合，提升机构使基板沿第一向上的方向移动到处理室内的接触位置，并且在第二方向上提供非接触位置。当衬底保持器移动到接触位置时，衬底电气地接合安装在处理室内的固定位置的导电弹簧加载的柔性机构。弹簧加载的顺应机构连接到用于处理室的偏置电压馈通，其通过弹簧加载的顺应机构向基板施加偏置电压。

2. 发明申请

US20080121515A1 Magnetron sputtering utilizing halbach magnet arrays 审中-公开
标题翻译：使用Halbach磁体阵列的磁控管溅射
公开(公告)号：US20080121515A1
公开(公告)日：2008-05-29
申请号：US11604326
申请日：2006-11-27
申请人： Paul S. McLeod
发明人： Paul S. McLeod
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01J37/3405 , H01J37/3452
摘要： A magnetron sputtering target assembly, comprises a target adapted to comprise of at least one material to be sputtered, the target including a pair of oppositely facing surfaces; and a magnet assembly comprising a plurality of Halbach magnet arrays adjacent one of the surfaces for providing magnetic field lines which emerge from and re-enter the other of the surfaces to form an arched, closed-loop magnetic field path over the other surface. The enhanced magnetic flux intensity provided by the Halbach magnet assemblies, relative to conventional magnetron magnet assemblies, facilitates sputtering of thick targets comprised of magnetic materials in the manufacture of recording media, as well as low pressure sputtering of high quality carbon-containing protective overcoat materials for such media.
摘要翻译：磁控溅射靶组件包括适于包括至少一种待溅射材料的靶，所述靶包括一对相对面的表面; 以及磁体组件，其包括邻近所述表面中的一个的多个Halbach磁体阵列，用于提供从另一个表面出来并重新进入另一个表面的磁场线，以在另一个表面上形成拱形的闭环磁场路径。相对于传统的磁控管磁体组件，由Halbach磁体组件提供的增强的磁通强度有助于在制造记录介质时溅射由磁性材料构成的厚靶，以及高质量含碳保护外套材料的低压溅射为这样的媒体。

3. 发明授权

US4829021A Process for vacuum chemical epitaxy 失效
标题翻译：真空化学外延工艺
公开(公告)号：US4829021A
公开(公告)日：1989-05-09
申请号：US130582
申请日：1987-12-09
申请人： Lewis M. Fraas , Paul S. McLeod , John A. Cape
发明人： Lewis M. Fraas , Paul S. McLeod , John A. Cape
IPC分类号： C30B25/02 , C30B25/14 , H01L21/205
CPC分类号： C30B25/02 , C30B25/14 , C30B29/40 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02576 , H01L21/0262 , Y10S148/057 , Y10S148/065 , Y10S148/11 , Y10S148/169
摘要： An injection block having a plurality of geometrically arranged injection sources for gaseous Group III metal organic compounds is oriented substantially perpendicular to the placement of at least one semiconductor wafer substrate within a vacuum reaction chamber. The injector sources are sized to provide disbursing flow of the compounds capable of depositing a layer of about 5% uniform thickness or less over substantially the entire semiconductor wafer. An injection source of Group V compounds is located centrally within the geometrically arranged injection sources for the Group III compounds. The Group V injection source is sized to supply an excess of the Group V compounds required to react with the Group III compounds in order to form Group III-V semiconductor layers on the substrate and partition the Group III sources into groups having substantially equal numbers of injection sources. An excess of Group V comounds is injected. The vacuum within the reaction chamber is adjusted at predetermined flow rates of the Group III compounds such that a mean-free path of the Group III compounds is greater than the distance from the injection source of the Group III compounds to the substrate. The substrate is heated to a temperature to which a reaction proceeds. The unreacted Group III compounds are exhausted from the vacuum chamber adjacent the edges of a substrate holder facing the top of the chamber opposite to the injection sources. In this manner, the disbursing flow of Group III compounds from the geometric arrangement of sources uniformly overlaps substantially the entire substrate and the algebraic sum of the fluxes from the Group III compound sources remains constant across the area of the substrate upon which the layer is to be deposited.
摘要翻译：具有用于气态III族金属有机化合物的多个几何排列的注入源的注入块基本上垂直于至少一个半导体晶片衬底在真空反应室内的放置。喷射器源的尺寸设置成提供能够在基本上整个半导体晶片上沉积约5％均匀厚度或更小厚度的层的化合物的散发流。第V族化合物的注入源位于第III族化合物的几何排列的注入源的中心。 V族注入源的大小适于提供与III族化合物反应所需的过量的V族化合物，以便在基材上形成III-V族半导体层，并将III族源分成具有基本相同数目的注射源。注入超过V组。在III族化合物的预定流速下调节反应室内的真空度，使得III族化合物的平均自由程大于从III族化合物的注入源到底物的距离。将基底加热到反应进行的温度。未反应的III族化合物从邻近位于与注入源相对的腔室顶部的衬底保持器的边缘的真空室中排出。以这种方式，来自源的几何排列的III族化合物的释放流动基本上与整个基底重叠，并且来自III族化合物源的通量的代数和在层之间的基底区域保持恒定存放

4. 发明授权

US4776893A GaAs on GaSb mechanically stacked photovoltaic cells, package assembly, and modules 失效
标题翻译： GaAs上GaSb机械堆叠的光伏电池，封装组件和模块
公开(公告)号：US4776893A
公开(公告)日：1988-10-11
申请号：US921566
申请日：1986-10-21
申请人： Paul S. McLeod , John A. Cape , Lewis M. Fraas , Larry D. Partain
发明人： Paul S. McLeod , John A. Cape , Lewis M. Fraas , Larry D. Partain
IPC分类号： H01L25/04 , H01L31/02 , H01L31/0203 , H01L31/048 , H01L31/052 , H01L31/06 , H01L25/08
CPC分类号： H01L31/0203 , H01L31/02008 , H01L31/043 , H01L31/048 , H01L31/052 , H01L2924/0002 , Y02E10/50
摘要： The present invention is an apparatus of mechanically stacked photovoltaic cells having two cells. The bottom cell has a layer of GaSb having regions of different conductivity forming a homojunction therein. The GaSb layer is sandwiched between a conductive substrate and a bottom passivating layer. In the bottom cell is a means for forming electrical contacts to the substrate and the incident surface of the bottom passivating layer. The top cell has a layer of GaAs having regions of different conductivity forming a homojunction therein, a top passivating layer contacting the surface of the layer of GaAs which is incident to solar radiation, and a means for forming electrical contacts to the layer of GaAs opposed to solar radiation and the incident surface of the passivating layer.
摘要翻译：本发明是具有两个电池的机械堆叠的光伏电池的装置。底部电池具有具有不同导电性区域的GaSb层，其中形成均匀结。 GaSb层夹在导电基板和底部钝化层之间。底部电池是形成与基板和底部钝化层的入射表面的电接触的装置。顶部电池具有GaAs层，其具有不同导电性的区域，其中形成均质结，顶部钝化层接触入射到太阳辐射的GaAs层的表面，以及用于形成与GaAs相对的电接触的装置到太阳辐射和钝化层的入射表面。

5. 发明授权

US3956093A Planar magnetron sputtering method and apparatus 失效
标题翻译：平面磁控溅射法和设备
公开(公告)号：US3956093A
公开(公告)日：1976-05-11
申请号：US532806
申请日：1974-12-16
申请人： Paul S. McLeod
发明人： Paul S. McLeod
IPC分类号： C23C14/34 , C23C14/36 , H01J37/34 , C23C15/00
CPC分类号： H01J37/347 , H01J37/3408 , H01J37/3458
摘要： A planar magnetron sputtering apparatus is provided with an additional, variable magnetic field normal to and substantially throughout the erosion region of a cathode plate. Application of the foregoing variable magnetic field effects continuous variations in the general location of the points at which magnetic lines of flux are parallel to the cathode plate which correspondingly results in variations in the points of maximum cathode plate erosion. By producing a less acute erosion pattern over a wider cathode plate area, a greater portion of the cathode plate material may be sputtered from any particular planar cathode plate.
摘要翻译：平面磁控溅射装置具有与阴极板的侵蚀区域垂直并且基本上遍及整个侵蚀区域的额外的可变磁场。上述可变磁场的应用在磁通磁通线平行于阴极板的点的一般位置上产生连续变化，这相应地导致最大阴极板侵蚀点的变化。通过在更宽的阴极板区域上产生较不锋利的侵蚀模式，阴极板材料的大部分可以从任何特定的平面阴极板溅射。

6. 发明授权

US08591710B2 Method and apparatus for formation of oriented magnetic films for magnetic recording media 有权
标题翻译：用于形成用于磁记录介质的定向磁膜的方法和装置
公开(公告)号：US08591710B2
公开(公告)日：2013-11-26
申请号：US11142478
申请日：2005-06-02
申请人： Paul S. McLeod , Charles F. Brucker , Jeffrey S. Reiter
发明人： Paul S. McLeod , Charles F. Brucker , Jeffrey S. Reiter
IPC分类号： C23C14/34
CPC分类号： C23C14/568 , G11B5/656 , G11B5/667 , G11B5/85 , G11B5/852
摘要： A method of forming a layer of a magnetic material with radially oriented magnetic anisotropy, comprising sequential steps of providing a circular, annular disk-shaped substrate having an inner diameter and an outer diameter, forming a layer of a magnetic material with non-radially oriented magnetic anisotropy over at least one surface of the substrate, and re-orienting the magnetic anisotropy in a radial direction. Preferably, the re-orientation is performed magnetically and the radially oriented layer serves as a magnetically soft underlayer (SUL) of a magnetic recording medium. Also disclosed is a multi-chamber apparatus for performing the disclosed process.
摘要翻译：一种形成具有径向取向的磁各向异性的磁性材料层的方法，包括提供具有内径和外径的圆形环形盘形基底的顺序步骤，形成具有非径向定向的磁性材料层在基板的至少一个表面上的磁各向异性，并且在径向方向上重新定向磁各向异性。优选地，重新取向是磁性地进行的，并且径向取向层用作磁记录介质的磁软底层（SUL）。还公开了用于执行所公开的处理的多室装置。

7. 发明申请

US20120048724A1 Cylindrical Magnetron Sputter Source Utilizing Halbach Magnet Array 审中-公开
标题翻译：使用Halbach磁体阵列的圆柱形磁控溅射源
公开(公告)号：US20120048724A1
公开(公告)日：2012-03-01
申请号：US12873259
申请日：2010-08-31
申请人： Paul S. McLeod
发明人： Paul S. McLeod
IPC分类号： C23C14/35
CPC分类号： D06M13/08 , C23C14/35 , D06M13/53 , H01J37/3405 , H01J37/3417 , H01J37/342 , H01J37/3452
摘要： A cylindrical magnetron sputtering cathode comprises a rotatable cylindrical sputtering target, a magnet assembly that includes a plurality of Halbach magnet arrays disposed within the rotatable cylindrical sputtering target and a magnetic magnet support and field shaper disposed within the sputtering target and to which the magnet assembly is attached.
摘要翻译：圆柱形磁控溅射阴极包括可旋转圆柱形溅射靶，磁体组件，其包括设置在可旋转圆柱形溅射靶内的多个Halbach磁体阵列和设置在溅射靶内的磁性磁体支架和场整形器，磁体组件附上。

8. 发明授权

US07141145B2 Gas injection for uniform composition reactively sputter-deposited thin films 有权
标题翻译：用于均匀组成的气体注入反应溅射沉积的薄膜
公开(公告)号：US07141145B2
公开(公告)日：2006-11-28
申请号：US10676105
申请日：2003-10-02
申请人： Charles Frederick Brucker , Paul S. McLeod , Chang Yi
发明人： Charles Frederick Brucker , Paul S. McLeod , Chang Yi
IPC分类号： C23C14/34
CPC分类号： H01J37/3244 , C23C14/0063 , C23C14/3464
摘要： A method of forming a thin film on a substrate/workpiece by sputtering, comprising steps of: (a) providing an apparatus comprising a vacuum chamber including at least one sputtering source and a gas supply means for injecting a gas containing at least one reactive component into said chamber, the gas supply means comprising a plurality of differently-sized outlet orifices adapted for providing substantially the same flow rate of gas from each orifice; (b) providing a substrate/workpiece having at least one surface for formation of a thin film thereon; (c) generating a sputtered particle flux from the at least one sputtering source; (d) injecting the gas containing the at least one reactive component into the chamber via the gas supply means, such that the same gas flow rate is provided at each orifice; and (e) forming a reactively sputtered thin film on the at least one surface of the substrate/workpiece, the reactively sputtered thin film having a substantially uniform content of the at least one reactive component.
摘要翻译：一种通过溅射在衬底/工件上形成薄膜的方法，包括以下步骤：（a）提供一种包括真空室的设备，该真空室包括至少一个溅射源和气体供应装置，用于将含有至少一个反应组分所述气体供应装置包括多个不同尺寸的出口孔口，其适于提供与每个孔口基本相同的气体流量; （b）提供具有至少一个用于在其上形成薄膜的表面的基底/工件; （c）从所述至少一个溅射源产生溅射的粒子通量; （d）经由气体供给装置将含有至少一个反应性组分的气体注入室中，使得在每个孔口处设置相同的气体流量; 和（e）在所述衬底/工件的所述至少一个表面上形成反应溅射的薄膜，所述反应溅射的薄膜具有至少一个反应组分的基本上均匀的含量。

9. 发明授权

US06497799B1 Method and apparatus for sputter deposition of multilayer films 有权
标题翻译：用于溅射沉积多层膜的方法和装置
公开(公告)号：US06497799B1
公开(公告)日：2002-12-24
申请号：US09832115
申请日：2001-04-11
申请人： Paul S. McLeod
发明人： Paul S. McLeod
IPC分类号： C23C1434
CPC分类号： C23C14/568 , C23C14/165
摘要： Apparatus for forming a multilayer film on at least one surface of a substrate comprises a vacuum chamber including: (a) a pair of parallel top and bottom walls connected by a side wall; (b) at least one entry/exit means in the side wall for insertion and withdrawal of a substrate from the chamber; (c) a plurality of spaced-apart, radially extending, linearly elongated sputtering sources arranged in a co-planar array adjacent one of the top or bottom walls of the chamber, each of the linearly elongated sputtering sources having a length and a width; and (d) a gripper/transporter for gripping and moving a substrate in a generally circular, planar path past each of the plurality of radially extending sputtering sources, such that the at least one deposition surface of the substrate faces each of the sputtering sources during movement along the circular path, for deposition of the multilayer film thereon.
摘要翻译：用于在基板的至少一个表面上形成多层膜的设备包括真空室，其包括：（a）一对由侧壁连接的平行顶壁和底壁;（b）在侧面中的至少一个入口/出口装置壁，用于从腔室插入和取出基底;（c）多个间隔开的径向延伸的线性伸长的溅射源，其布置在邻近腔室的顶壁或底壁之一的共平面阵列中，每个线性伸长的溅射源具有长度和宽度; 以及（d）夹持器/运送器，其用于夹持并移动通过所述多个径向延伸的溅射源中的每一个的大致圆形的平面路径中的衬底，使得所述衬底的所述至少一个沉积表面面对每个所述溅射源沿着圆形路径的移动，用于在其上沉积多层膜。

10. 发明授权

US4125446A Controlled reflectance of sputtered aluminum layers 失效
标题翻译：溅射铝层的受控反射率
公开(公告)号：US4125446A
公开(公告)日：1978-11-14
申请号：US824682
申请日：1977-08-15
申请人： Larry D. Hartsough , Paul S. McLeod
发明人： Larry D. Hartsough , Paul S. McLeod
IPC分类号： C03C17/09 , C23C14/00 , F21V7/22 , F24J2/10 , C23C15/00
CPC分类号： F24J2/1057 , C03C17/09 , C23C14/0042 , F21V7/22 , Y02E10/40
摘要： A method for depositing aluminum layers having a predetermined reflectance or a predetermined resistivity is disclosed. The layers are deposited by sputtering a target comprising 90% or greater aluminum. The parameters which must be controlled include the partial pressure of reactive gases, such as nitrogen, hydrogen, oxygen and water vapor, which are minor constituents of the sputtering gas, the total sputtering gas pressure, the substrate temperature, and the deposition rate.
摘要翻译：公开了一种用于沉积具有预定反射率或预定电阻率的铝层的方法。通过溅射沉积这些层，所述靶包含90％或更大的铝。必须控制的参数包括溅射气体的次要成分，总溅射气体压力，基板温度和沉积速率等反应性气体如氮气，氢气，氧气和水蒸汽的分压。

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