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1. 发明授权

US07679069B2 Method and system for optimizing alignment performance in a fleet of exposure tools 有权
标题翻译：用于优化曝光工具的对准性能的方法和系统
公开(公告)号：US07679069B2
公开(公告)日：2010-03-16
申请号：US11686871
申请日：2007-03-15
申请人： Michael E. Adel , John Robinson , Pavel Izikson , Brad Eichelberger , Amir Widmann , Atsuhiko Kato
发明人： Michael E. Adel , John Robinson , Pavel Izikson , Brad Eichelberger , Amir Widmann , Atsuhiko Kato
IPC分类号： G21K1/00
CPC分类号： G03F7/70458 , G03F7/70525 , G03F7/706 , G03F9/7046
摘要： A method for optimizing alignment performance in a fleet of exposure systems involves characterizing each exposure system in a fleet of exposure systems to generate a set of distinctive distortion profiles associated with each exposure system. The set of distinctive distortion profiles are stored in a database. A wafer having reference pattern formed thereon is provided for further pattern fabrication and an exposure system is selected from the fleet to fabricate a next layer on the wafer. Linear and higher order parameters of the selected exposure system are adjusted using the distinctive distortion profiles to model the distortion of the reference pattern. Once the exposure system is adjusted, it is used to form a lithographic pattern on the wafer.
摘要翻译：用于优化曝光系统队列中的对准性能的方法涉及表征曝光系统中的每个曝光系统，以产生与每个曝光系统相关联的一组独特的失真曲线。一组有特色的失真简档存储在数据库中。提供具有形成在其上的参考图案的晶片用于进一步的图案制造，并且从车队中选择曝光系统以在晶片上制造下一层。使用不同的失真曲线来调整所选曝光系统的线性和高阶参数以对参考图案的失真进行建模。一旦调整曝光系统，就用于在晶片上形成平版印刷图案。

2. 发明申请

US20090063378A1 APPARATUS AND METHODS FOR PREDICTING A SEMICONDUCTOR PARAMETER ACROSS AN AREA OF A WAFER 有权
标题翻译：用于预测半波长参数的装置和方法
公开(公告)号：US20090063378A1
公开(公告)日：2009-03-05
申请号：US11955262
申请日：2007-12-12
申请人： Pavel Izikson
发明人： Pavel Izikson
IPC分类号： G06F15/18
CPC分类号： G05B13/027 , G03F7/70625 , G03F7/70633 , H01L22/12
摘要： Apparatus and methods are provided for predicting a plurality of unknown parameter values (e.g. overlay error or critical dimension) using a plurality of known parameter values. In one embodiment, the method involves training a neural network to predict the plurality of parameter values. In other embodiments, the prediction process does not depend on an optical property of a photolithography tool. Such predictions may be used to determine wafer lot disposition.
摘要翻译：提供了使用多个已知参数值来预测多个未知参数值（例如重叠误差或临界尺寸）的装置和方法。在一个实施例中，该方法包括训练神经网络以预测多个参数值。在其他实施例中，预测过程不依赖于光刻工具的光学特性。这种预测可用于确定晶片批次布置。

3. 发明申请

US20060280357A1 Use of overlay diagnostics for enhanced automatic process control 有权
标题翻译：使用覆盖诊断功能进行增强的自动过程控制
公开(公告)号：US20060280357A1
公开(公告)日：2006-12-14
申请号：US11510147
申请日：2006-08-24
申请人： Joel Seligson , Mark Ghinovker , John Robinson , Pavel Izikson , Michael Adel , Boris Simkin , David Tulipman , Vladimir Levinski
发明人： Joel Seligson , Mark Ghinovker , John Robinson , Pavel Izikson , Michael Adel , Boris Simkin , David Tulipman , Vladimir Levinski
IPC分类号： G06K9/00
CPC分类号： G03F7/705 , G03F7/70516 , G03F7/70633
摘要： Disclosed are apparatus and methods for obtaining and analyzing various unique metrics or “target diagnostics” from one or more semiconductor overlay targets. In one embodiment, an overlay target is measured to obtain one or both of two specific types of target diagnostic information, systematic error metrics and/or random noise metrics. The systematic error metrics generally quantify asymmetries of the overlay target, while the random noise metrics quantify and/or qualify the spatial noise that is proximate to or associated with the overlay target.
摘要翻译：公开了用于从一个或多个半导体覆盖目标获取和分析各种独特度量或“目标诊断”的装置和方法。在一个实施例中，测量覆盖目标以获得两种特定类型的目标诊断信息，系统误差度量和/或随机噪声度量中的一种或两种。系统误差度量通常量化覆盖目标的不对称性，而随机噪声度量量化和/或限定与覆盖目标邻近或相关联的空间噪声。

4. 发明授权

US08142966B2 Substrate matrix to decouple tool and process effects 有权
标题翻译：基板矩阵去耦工具和过程效应
公开(公告)号：US08142966B2
公开(公告)日：2012-03-27
申请号：US12990183
申请日：2009-05-20
申请人： Pavel Izikson , Michael E. Adel , Daniel Kandel
发明人： Pavel Izikson , Michael E. Adel , Daniel Kandel
IPC分类号： G03F9/00 , H01L21/66
CPC分类号： G03F7/70641 , G05B19/41845 , G05B2219/32187 , G05B2219/36307 , H01L22/20 , Y02P90/16 , Y02P90/22
摘要： A method of characterizing a process by selecting the process to characterize, selecting a parameter of the process to characterize, determining values of the parameter to use in a test matrix, specifying an eccentricity for the test matrix, selecting test structures to be created in cells on a substrate, processing the substrate through the process using in each cell the value of the parameter as determined by the eccentric test matrix, measuring a property of the test structures in the cells, and developing a correlation between the parameter and the property.
摘要翻译：一种通过选择表征过程来表征过程的方法，选择过程的参数来表征，确定在测试矩阵中使用的参数的值，指定测试矩阵的偏心度，选择要在单元格中创建的测试结构在基板上，通过在每个单元中使用由偏心测试矩阵确定的参数值来处理基板，测量单元中的测试结构的性质，并且发展参数和属性之间的相关性。

5. 发明授权

US07873585B2 Apparatus and methods for predicting a semiconductor parameter across an area of a wafer 有权
标题翻译：用于预测跨晶片区域的半导体参数的装置和方法
公开(公告)号：US07873585B2
公开(公告)日：2011-01-18
申请号：US11955262
申请日：2007-12-12
申请人： Pavel Izikson
发明人： Pavel Izikson
IPC分类号： G06F15/18 , G06E1/00 , G06E3/00 , G06G7/00
CPC分类号： G05B13/027 , G03F7/70625 , G03F7/70633 , H01L22/12
摘要： Apparatus and methods are provided for predicting a plurality of unknown parameter values (e.g. overlay error or critical dimension) using a plurality of known parameter values. In one embodiment, the method involves training a neural network to predict the plurality of parameter values. In other embodiments, the prediction process does not depend on an optical property of a photolithography tool. Such predictions may be used to determine wafer lot disposition.
摘要翻译：提供了使用多个已知参数值来预测多个未知参数值（例如重叠误差或临界尺寸）的装置和方法。在一个实施例中，该方法包括训练神经网络以预测多个参数值。在其他实施例中，预测过程不依赖于光刻工具的光学特性。这种预测可用于确定晶片批次布置。

6. 发明申请

US20080286885A1 METHODS AND SYSTEMS FOR CREATING OR PERFORMING A DYNAMIC SAMPLING SCHEME FOR A PROCESS DURING WHICH MEASUREMENTS ARE PERFORMED ON WAFERS 有权
标题翻译：用于创建或执行测量过程中的过程的动态采样方案的方法和系统
公开(公告)号：US20080286885A1
公开(公告)日：2008-11-20
申请号：US12107346
申请日：2008-04-22
申请人： Pavel Izikson , John Robinson , Mike Adel , Amir Widmann , Dongsub Choi , Anat Marchelli
发明人： Pavel Izikson , John Robinson , Mike Adel , Amir Widmann , Dongsub Choi , Anat Marchelli
IPC分类号： G06F19/00 , H01L21/66
CPC分类号： G05B21/02 , G03F7/70508 , G03F7/70625 , G03F7/70633
摘要： Various methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers are provided. One method for creating a dynamic sampling scheme for a process during which measurements are performed on wafers includes performing the measurements on all of the wafers in at least one lot at all measurement spots on the wafers. The method also includes determining an optimal sampling scheme, an enhanced sampling scheme, a reduced sampling scheme, and thresholds for the dynamic sampling scheme for the process based on results of the measurements. The thresholds correspond to values of the measurements at which the optimal sampling scheme, the enhanced sampling scheme, and the reduced sampling scheme are to be used for the process.
摘要翻译：提供了用于创建或执行在晶片上执行测量的过程的动态采样方案的各种方法和系统。用于为在晶片上进行测量的过程创建动态采样方案的一种方法包括在晶片上的所有测量点处对至少一批中的所有晶片执行测量。该方法还包括基于测量结果确定用于该过程的动态采样方案的最佳采样方案，增强采样方案，减少采样方案和阈值。阈值对应于最佳采样方案，增强采样方案和减少采样方案将用于该过程的测量值。

7. 发明授权

US09620426B2 Method and system for providing process tool correctables using an optimized sampling scheme with smart interpolation 有权
公开(公告)号：US09620426B2
公开(公告)日：2017-04-11
申请号：US13018729
申请日：2011-02-01
申请人： Pavel Izikson , John Robinson , Daniel Kandel
发明人： Pavel Izikson , John Robinson , Daniel Kandel
IPC分类号： G01N37/00 , H01L21/66
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The present invention may include performing a first measurement on a wafer of a first lot of wafers via an omniscient sampling process, calculating a first set of process tool correctables utilizing one or more results of the measurement performed via an omniscient sampling process, randomly selecting a set of field sampling locations of the wafer of a first lot of wafers, calculating a second set of process tool correctables by applying an interpolation process to the randomly selected set of field sampling locations, wherein the interpolation process utilizes values from the first set of process tool correctables for the randomly selected set of field sampling locations in order to calculate correctables for fields of the wafer of the first lot not included in the set of randomly selected fields, and determining a sub-sampling scheme by comparing the first set of process tool correctables to the second set of correctables.

8. 发明申请

US20120084041A1 METHOD AND SYSTEM FOR PROVIDING TOOL INDUCED SHIFT USING A SUB-SAMPLING SCHEME 有权
标题翻译：使用子采样方案提供工具感应移位的方法和系统
公开(公告)号：US20120084041A1
公开(公告)日：2012-04-05
申请号：US13231333
申请日：2011-09-13
申请人： Pavel Izikson , Guy Cohen
发明人： Pavel Izikson , Guy Cohen
IPC分类号： G06F19/00
CPC分类号： G03F7/70616
摘要： The present invention may include measuring tool induced shift (TIS) on at least one wafer of a lot of wafers via an omniscient sampling process, randomly generating a plurality of sub-sampling schemes, each of the set of randomly generated sub-sampling schemes having the same number of sampled fields, measuring TIS at each location of each of the randomly generated sub-sampling schemes, approximating a set of TIS values for each of the randomly generated sub-sampling schemes utilizing the TIS measurements from each of the randomly generated sub-sampling schemes, wherein each set of TIS values for each of the randomly generated sub-sampling schemes is calculated utilizing an interpolation process configured to approximate a TIS value for each location not included in a randomly generated sub-sampling scheme, and determining a selected sub-sampling scheme by comparing each of the calculated sets of TIS values to the measured TIS of the omniscient sampling process.
摘要翻译：本发明可以包括通过无所不在的采样过程在许多晶片的至少一个晶片上测量工具诱发偏移（TIS），随机产生多个子采样方案，所述随机生成的子采样方案中的每一个具有相同数量的采样场，测量每个随机生成的子采样方案的每个位置处的TIS，利用来自随机生成的子单元中的每一个的TIS测量来近似每个随机生成的子采样方案的一组TIS值采样方案，其中使用内插过程来计算随机生成的子采样方案中的每一个的每组TIS值，所述内插处理被配置为对于未包括在随机生成的子采样方案中的每个位置近似TIS值，并且确定所选择的通过将每个计算出的TIS值集合与全向采样过程的测量TIS进行比较，进行子采样方案。

9. 发明申请

US20110051116A1 Substrate Matrix To Decouple Tool And Process Effects 有权
标题翻译：基板矩阵去除工具和过程效应
公开(公告)号：US20110051116A1
公开(公告)日：2011-03-03
申请号：US12990183
申请日：2009-05-20
申请人： Pavel Izikson , Michael E. Adel , Daniel Kandel
发明人： Pavel Izikson , Michael E. Adel , Daniel Kandel
IPC分类号： G03B27/32
CPC分类号： G03F7/70641 , G05B19/41845 , G05B2219/32187 , G05B2219/36307 , H01L22/20 , Y02P90/16 , Y02P90/22
摘要： A method of characterizing a process by selecting the process to characterize, selecting a parameter of the process to characterize, determining values of the parameter to use in a test matrix, specifying an eccentricity for the test matrix, selecting test structures to be created in cells on a substrate, processing the substrate through the process using in each cell the value of the parameter as determined by the eccentric test matrix, measuring a property of the test structures in the cells, and developing a correlation between the parameter and the property.
摘要翻译：一种通过选择表征过程来表征过程的方法，选择过程的参数来表征，确定在测试矩阵中使用的参数的值，指定测试矩阵的偏心度，选择要在单元格中创建的测试结构在基板上，通过在每个单元中使用由偏心测试矩阵确定的参数值来处理基板，测量单元中的测试结构的性质，并且发展参数和属性之间的相关性。

10. 发明授权

US09651943B2 Methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers 有权
公开(公告)号：US09651943B2
公开(公告)日：2017-05-16
申请号：US13457383
申请日：2012-04-26
申请人： Pavel Izikson , John Robinson , Mike Adel , Amir Widmann , Dongsub Choi , Anat Marchelli
发明人： Pavel Izikson , John Robinson , Mike Adel , Amir Widmann , Dongsub Choi , Anat Marchelli
IPC分类号： H01L21/66 , G06F19/00 , G05B21/02 , G03F7/20
CPC分类号： G05B21/02 , G03F7/70508 , G03F7/70625 , G03F7/70633
摘要： Various methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers are provided. One method for creating a dynamic sampling scheme for a process during which measurements are performed on wafers includes performing the measurements on all of the wafers in at least one tot at all measurement spots on the wafers. The method also includes determining an optimal sampling scheme, an enhanced sampling scheme, a reduced sampling scheme, and thresholds for the dynamic sampling scheme for the process based on results of the measurements. The thresholds correspond to values of the measurements at which the optimal sampling scheme, the enhanced sampling scheme, and the reduced sampling scheme are to be used for the process.

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