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    • 2. 发明授权
    • Method and apparatus for controlling a fabrication process based on a measured electrical characteristic
    • 基于测量的电气特性来控制制造工艺的方法和装置
    • US06912437B2
    • 2005-06-28
    • US10262620
    • 2002-09-30
    • Robert J. ChongJin Wang
    • Robert J. ChongJin Wang
    • H01L21/66G06F19/00
    • H01L22/20H01L22/12
    • A method includes performing at least one process for forming a feature of a semiconductor device in accordance with an operating recipe. An electrical performance characteristic of the feature is measured. The measured electrical performance characteristic is compared to a target value for the electrical performance characteristic. At least one parameter of the operating recipe is determined based on the comparison. A system includes a process tool, a metrology tool, and a controller. The process tool is configured to perform at least one process for forming a feature of a semiconductor device in accordance with an operating recipe. The metrology tool is configured to measure an electrical performance characteristic of the feature. The controller is configured to compare the measured electrical performance characteristic to a target value for the electrical performance characteristic and determine at least one parameter of the operating recipe based on the comparison.
    • 一种方法包括根据操作配方执行用于形成半导体器件的特征的至少一个处理。 测量该特征的电气性能特征。 将测量的电性能特性与电性能特性的目标值进行比较。 基于比较确定操作配方的至少一个参数。 系统包括处理工具,计量工具和控制器。 处理工具被配置为执行根据操作配方形成半导体器件的特征的至少一个处理。 测量工具被配置为测量该特征的电性能特征。 控制器被配置为将测量的电性能特性与电性能特性的目标值进行比较,并且基于该比较确定操作配方的至少一个参数。
    • 7. 发明授权
    • Method of controlling exposure processes by monitoring photon levels, and system for accomplishing same
    • 通过监控光子水平来控制曝光过程的方法以及完成相同的系统
    • US07186487B1
    • 2007-03-06
    • US10771109
    • 2004-02-03
    • Robert J. Chong
    • Robert J. Chong
    • G03C5/00
    • G03F7/70558G03B7/00
    • The present invention is generally directed to various methods of controlling exposure processes by monitoring photon levels, and various systems for accomplishing same. In one embodiment, the method comprises performing an exposure process by generating light comprised of a number of photons from a light source to expose at least a portion of a layer of photo-sensitive material, counting a number of photons incident on at least a portion of the layer of photo-sensitive material, and controlling at least one of a duration of the exposure process and an irradiance of the light source based upon the counted number of photons. In another illustrative embodiment, the method comprises performing an exposure process by generating light comprised of a number of photons from a light source to expose at least a portion of a layer of photo-sensitive material, determining a rate at which the photons impact at least a portion of the layer of photo-sensitive material, and controlling at least one of a duration of the exposure process and an irradiance of the light source based upon the determined rate of the photons impacting the layer of photo-sensitive material.
    • 本发明一般涉及通过监控光子水平来控制曝光过程的各种方法以及用于实现其的各种系统。 在一个实施例中,该方法包括通过产生由来自光源的多个光子组成的光来曝光光敏材料层的至少一部分,对入射在至少一部分上的光子计数 的光敏材料层,并且基于计数的光子数来控制曝光过程的持续时间和光源的辐照度中的至少一个。 在另一说明性实施例中,该方法包括通过产生由光源产生的多个光子的光进行曝光处理,以暴露光敏材料层的至少一部分,确定光子至少影响的速率 光敏材料层的一部分,并且基于影响光敏材料层的光子的确定速率来控制曝光过程的持续时间和光源的辐照度中的至少一个。
    • 9. 发明授权
    • Advanced process control of the manufacture of an oxide-nitride-oxide stack of a memory device, and system for accomplishing same
    • 存储器件的氧化物 - 氮化物 - 氧化物堆叠的制造的先进工艺控制和用于实现其的系统
    • US06953697B1
    • 2005-10-11
    • US10277357
    • 2002-10-22
    • Howard E. CastleRobert J. ChongBrian K. CussonEric O. Green
    • Howard E. CastleRobert J. ChongBrian K. CussonEric O. Green
    • H01L21/66H01L21/8247
    • H01L22/12Y10S438/954
    • The present invention is generally directed to an advanced process control of the manufacture of memory devices, and a system for accomplishing same. In one illustrative embodiment, the method comprises performing at least one process operation to form at least one layer of an oxide-nitride-oxide stack of a memory cell, the stack being comprised of a first layer of oxide positioned above a first layer of polysilicon, a layer of silicon nitride positioned above the first layer of oxide, and a second layer of oxide positioned above the layer of silicon nitride. The method further comprises measuring at least one characteristic of at least one of the first layer of polysilicon, the first oxide layer, the layer of silicon nitride, and the second layer of oxide and adjusting at least one parameter of at least one process operation used to form at least one of the first oxide layer, the layer of silicon nitride and the second oxide layer if the measured at least one characteristic is not within acceptable limits.
    • 本发明一般涉及存储器件的制造的高级过程控制和用于实现其的系统。 在一个说明性实施例中,该方法包括执行至少一个处理操作以形成存储器单元的氧化物 - 氮化物 - 氧化物堆叠的至少一层,所述堆叠由位于第一多晶硅层之上的第一层氧化物 位于第一氧化物层之上的氮化硅层和位于氮化硅层上方的第二层氧化物。 该方法还包括测量第一多晶硅层,第一氧化物层,氮化硅层和第二氧化物层中的至少一个的至少一个特征,并且调整使用的至少一个工艺操作的至少一个参数 如果所测量的至少一个特性不在可接受的限度内,则形成第一氧化物层,氮化硅层和第二氧化物层中的至少一个。