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    • 4. 发明申请
    • Semiconductor Mismatch Reduction
    • 半导体失配减少
    • US20120235208A1
    • 2012-09-20
    • US13048411
    • 2011-03-15
    • Chung-Hui ChenRuey-Bin SheenYung-Chow PengPo-Zeng KangChung-Peng Hsieh
    • Chung-Hui ChenRuey-Bin SheenYung-Chow PengPo-Zeng KangChung-Peng Hsieh
    • H01L29/12H01L21/66
    • H01L27/0207
    • A system and method for reducing density mismatch is disclosed. An embodiment comprises determining a conductor density and an active area density in a high density area and a low density area of a semiconductor device. Dummy material may be added to the low density area in order to raise the conductor density and the active area density, thereby reducing the internal density mismatches between the high density area and the low density area. Additionally, a similar process may be used to reduce external mismatches between different regions on the semiconductor substrate. Once these mismatches have been reduced, empty regions surrounding the different regions may additionally be filled in order to reduce the conductor density mismatch and the active area density mismatches.
    • 公开了一种用于减小密度失配的系统和方法。 一个实施例包括确定半导体器件的高密度区域和低密度区域中的导体密度和有源面积密度。 为了提高导体密度和有效面积密度,可以向低密度区域添加虚拟材料,从而降低高密度区域和低密度区域之间的内部密度失配。 另外,可以使用类似的工艺来减少半导体衬底上不同区域之间的外部失配。 一旦这些失配被减小,则可以另外填充围绕不同区域的空区,以减少导体密度失配和有源区密度失配。
    • 5. 发明授权
    • Semiconductor mismatch reduction
    • 半导体失配减少
    • US09287252B2
    • 2016-03-15
    • US13048411
    • 2011-03-15
    • Chung-Hui ChenRuey-Bin SheenYung-Chow PengPo-Zeng KangChung-Peng Hsieh
    • Chung-Hui ChenRuey-Bin SheenYung-Chow PengPo-Zeng KangChung-Peng Hsieh
    • H01L29/12H01L27/02
    • H01L27/0207
    • A system and method for reducing density mismatch is disclosed. An embodiment comprises determining a conductor density and an active area density in a high density area and a low density area of a semiconductor device. Dummy material may be added to the low density area in order to raise the conductor density and the active area density, thereby reducing the internal density mismatches between the high density area and the low density area. Additionally, a similar process may be used to reduce external mismatches between different regions on the semiconductor substrate. Once these mismatches have been reduced, empty regions surrounding the different regions may additionally be filled in order to reduce the conductor density mismatch and the active area density mismatches.
    • 公开了一种用于减小密度失配的系统和方法。 一个实施例包括确定半导体器件的高密度区域和低密度区域中的导体密度和有源面积密度。 为了提高导体密度和有效面积密度,可以向低密度区域添加虚拟材料,从而降低高密度区域和低密度区域之间的内部密度失配。 另外,可以使用类似的工艺来减少半导体衬底上不同区域之间的外部失配。 一旦这些失配被减小,则可以另外填充围绕不同区域的空区,以减少导体密度失配和有源区密度失配。
    • 6. 发明申请
    • Methods for eliminating phase distortion in signals
    • 消除信号相位失真的方法
    • US20080297200A1
    • 2008-12-04
    • US11807521
    • 2007-05-29
    • Ruey-Bin Sheen
    • Ruey-Bin Sheen
    • G01R25/00
    • H03K5/1534H03K5/26
    • A circuit for reducing phase distortion of a first signal and a second signal is provided, wherein the first and the second signals are complementary. The circuit includes a detecting circuit for detecting a first edge of the first signal and a second edge of the second signal, wherein the second edge immediately follows the first edge and is in a same direction as the first edge; an output node; and a signal regenerator connected to the detecting circuit and the output node. The signal regenerator is configured to generate an output signal having an additional first edge and an additional second edge. The additional first edge and the additional second edge are opposite edges substantially aligned to the first edge and the second edge, respectively. The additional first edge and the additional second edge are immediate neighboring edges.
    • 提供了用于减少第一信号和第二信号的相位失真的电路,其中第一和第二信号是互补的。 该电路包括用于检测第一信号的第一边缘和第二信号的第二边缘的检测电路,其中第二边缘紧接着第一边缘并且处于与第一边缘相同的方向; 输出节点; 以及连接到检测电路和输出节点的信号再生器。 信号再生器被配置为产生具有附加的第一边缘和附加的第二边缘的输出信号。 附加的第一边缘和附加的第二边缘分别相对于第一边缘和第二边缘大致对准的相对边缘。 附加的第一边缘和附加的第二边缘是紧邻的边缘。
    • 8. 发明授权
    • Wide-range and low-power consumption voltage-controlled oscillator
    • 宽范围和低功耗的压控振荡器
    • US06310523B1
    • 2001-10-30
    • US09566454
    • 2000-05-08
    • Oscal Tzyh-Chiang ChenRobin Ruey-Bin Sheen
    • Oscal Tzyh-Chiang ChenRobin Ruey-Bin Sheen
    • H03B502
    • H03K3/012H03K3/0315H03L7/0995
    • A wide-range and low power consumption voltage-controlled oscillator according to the invention includes a logic control circuit, a parallel series controllable inverter bank and a voltage control load. The logic control circuit consists of a plurality of logic gates for receiving a selecting signal from an external device and then transmitting a control signal. The parallel series controllable inverter bank consists of a plurality of series controllable inverter banks electrically connected in parallel for receiving the control signal and outputting an oscillation signal, wherein the control signal is used to control the number of the series controllable inverter banks electrically connected in parallel. The voltage control load is electrically connected between the parallel series controllable inverter bank and ground for serving as a load of the parallel series controllable inverter bank.
    • 根据本发明的宽范围和低功耗压控振荡器包括逻辑控制电路,并联串联可控逆变器组和电压控制负载。 逻辑控制电路由多个逻辑门组成,用于从外部设备接收选择信号,然后发送控制信号。 并联串联可控逆变器组由并联电连接的多个串联可控逆变器组组成,用于接收控制信号并输出​​振荡信号,其中控制信号用于控制并联电连接的串联可控逆变器组的数量 。 电压控制负载电连接在并联串联可控逆变器组和地之间,用作并联串联可控逆变器组的负载。