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1. 发明申请

US20130275658A1 FLASH MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME 有权
标题翻译：闪存存储器件及其编程方法
公开(公告)号：US20130275658A1
公开(公告)日：2013-10-17
申请号：US13767535
申请日：2013-02-14
申请人： JINMAN HAN , HO-CHUL LEE , MIN-SU KIM , SANGWAN NAM , JUNGHOON PARK
发明人： JINMAN HAN , HO-CHUL LEE , MIN-SU KIM , SANGWAN NAM , JUNGHOON PARK
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G11C16/0483 , G11C16/3418 , H01L27/11582
摘要： A method is provided for programming a flash memory device including memory cells formed in a direction perpendicular to a substrate, a first sub word line connected to first memory cells and selectable by a first selection line, and a second sub word line connected to second memory cells and selectable by a second selection line, the first and second memory cells being formed at the same level and being supplied with a program voltage at the same time. The method includes performing LSB program operations on the first and second sub word lines by enabling the first and second selection lines, respectively; performing CSB program operations on the first and second sub word lines by enabling the first and second selection lines, respectively; and performing MSB program operations on the first and second sub word lines by enabling the first and second selection lines, respectively.
摘要翻译：提供一种用于编程闪存器件的方法，所述闪存器件包括沿垂直于衬底的方向形成的存储器单元，连接到第一存储器单元并由第一选择线选择的第一子字线以及连接到第二存储器的第二子字线并且可由第二选择线选择，第一和第二存储器单元在同一电平上形成，同时被提供有编程电压。该方法包括分别通过启用第一和第二选择线来对第一和第二子字线执行LSB编程操作; 通过分别启用第一和第二选择线来对第一和第二子字线执行CSB编程操作; 以及通过分别启用第一和第二选择线来对第一和第二子字线执行MSB编程操作。

2. 发明授权

US08976584B2 Flash memory device and method of programming the same 有权
标题翻译：闪存设备及其编程方法相同
公开(公告)号：US08976584B2
公开(公告)日：2015-03-10
申请号：US13767535
申请日：2013-02-14
申请人： Jinman Han , Ho-Chul Lee , Min-Su Kim , Sangwan Nam , Junghoon Park
发明人： Jinman Han , Ho-Chul Lee , Min-Su Kim , Sangwan Nam , Junghoon Park
IPC分类号： G11C11/34 , G06F12/02 , G11C16/04 , G11C16/34 , H01L27/115
CPC分类号： G06F12/0246 , G11C16/0483 , G11C16/3418 , H01L27/11582
摘要： A method is provided for programming a flash memory device including memory cells formed in a direction perpendicular to a substrate, a first sub word line connected to first memory cells and selectable by a first selection line, and a second sub word line connected to second memory cells and selectable by a second selection line, the first and second memory cells being formed at the same level and being supplied with a program voltage at the same time. The method includes performing LSB program operations on the first and second sub word lines by enabling the first and second selection lines, respectively; performing CSB program operations on the first and second sub word lines by enabling the first and second selection lines, respectively; and performing MSB program operations on the first and second sub word lines by enabling the first and second selection lines, respectively.
摘要翻译：提供一种用于编程闪存器件的方法，所述闪存器件包括沿垂直于衬底的方向形成的存储器单元，连接到第一存储器单元并由第一选择线选择的第一子字线以及连接到第二存储器的第二子字线并且可由第二选择线选择，第一和第二存储器单元在同一电平上形成，同时被提供有编程电压。该方法包括分别通过启用第一和第二选择线来对第一和第二子字线执行LSB编程操作; 通过分别启用第一和第二选择线来对第一和第二子字线执行CSB编程操作; 以及通过分别启用第一和第二选择线来对第一和第二子字线执行MSB编程操作。

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