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1. 发明申请

US20140265089A1 SUBSTRATE SUPPORT WITH ADVANCED EDGE CONTROL PROVISIONS 有权
标题翻译：基础支持与先进的边缘控制规定
公开(公告)号：US20140265089A1
公开(公告)日：2014-09-18
申请号：US13827687
申请日：2013-03-14
申请人： Kyle TANTIWONG , Samer BANNA
发明人： Kyle TANTIWONG , Samer BANNA
IPC分类号： H01L21/683
CPC分类号： H01L21/67109 , H01L21/6831 , H01L21/68735 , H01L21/68785
摘要： Embodiments of the present invention generally provide an apparatus with a recess and a cavity formed therein for future hardware retrofit and uniformity enhancement and methods for controlling the same. In one embodiment, a substrate support includes a supporting body having an outer wall, a ground path disposed against and bounding the outer wall of the supporting body, a mounting plate coupled to a lower surface of the supporting body, wherein the mounting plate includes a lip extending outward from the mounting plate defining an upper surface; and a recess formed at a perimeter of the supporting body above the upper surface of the lip of the mounting plate, the recess lining on the ground path extending at least partially to the mounting plate.
摘要翻译：本发明的实施例通常提供一种装置，其具有形成在其中以用于将来的硬件改进和均匀性增强的凹部和空腔以及用于控制它的方法。在一个实施例中，衬底支撑件包括支撑体，其具有外壁，抵靠并限制支撑体的外壁的接地路径;联接到支撑体的下表面的安装板，其中安装板包括：嘴唇，其从安装板向外延伸，限定上表面; 以及在所述安装板的唇缘的上表面上方的所述支撑体的周边处形成的凹部，所述接地路径上的所述凹陷衬垫至少部分地延伸到所述安装板。

2. 发明申请

US20110023780A1 APPARATUS FOR VHF IMPEDANCE MATCH TUNING 失效
标题翻译：甚高频阻抗匹配调谐装置
公开(公告)号：US20110023780A1
公开(公告)日：2011-02-03
申请号：US12511377
申请日：2009-07-29
申请人： KARTIK RAMASWAMY , HIROJI HANAWA , KENNETH S. COLLINS , LAWRENCE WONG , SAMER BANNA , ANDREW NGUYEN
发明人： KARTIK RAMASWAMY , HIROJI HANAWA , KENNETH S. COLLINS , LAWRENCE WONG , SAMER BANNA , ANDREW NGUYEN
IPC分类号： H03H7/38 , B05C13/00
CPC分类号： H01P7/04
摘要： Embodiments of impedance matching networks are provided herein. In some embodiments, an impedance matching network may include a coaxial resonator having an inner and an outer conductor. A tuning capacitor may be provided for variably controlling a resonance frequency of the coaxial resonator. The tuning capacitor may be formed by a first tuning electrode and a second tuning electrode and an intervening dielectric, wherein the first tuning electrode is formed by a portion of the inner conductor. A load capacitor may be provided for variably coupling energy from the inner conductor to a load. The load capacitor may be formed by the inner conductor, an adjustable load electrode, and an intervening dielectric.
摘要翻译：本文提供了阻抗匹配网络的实施例。在一些实施例中，阻抗匹配网络可以包括具有内部和外部导体的同轴谐振器。可以提供调谐电容器以可变地控制同轴谐振器的谐振频率。调谐电容器可以由第一调谐电极和第二调谐电极和中间电介质形成，其中第一调谐电极由内部导体的一部分形成。可以提供负载电容器，用于可变地耦合从内部导体到负载的能量。负载电容器可以由内部导体，可调负载电极和中间电介质形成。

3. 发明申请

US20110005685A1 PLASMA REACTOR WITH UNIFORM PROCESS RATE DISTRIBUTION BY IMPROVED RF GROUND RETURN PATH 有权
标题翻译：具有均匀加工速率分布的等离子体反应器通过改进的RF接地返回路径
公开(公告)号：US20110005685A1
公开(公告)日：2011-01-13
申请号：US12501966
申请日：2009-07-13
申请人： Andrew Nguyen , Hiroji Hanawa , Kartik Ramaswamy , Samer Banna , Anchel Sheyner , Valentin N. Todorow
发明人： Andrew Nguyen , Hiroji Hanawa , Kartik Ramaswamy , Samer Banna , Anchel Sheyner , Valentin N. Todorow
IPC分类号： C23F1/08 , C23C16/503
CPC分类号： H01J37/16 , H01J37/321 , H01J37/32623 , H01J37/32633 , H01J37/32642 , H01L31/18
摘要： In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.
摘要翻译：在其顶部具有RF等离子体源功率施加器的等离子体反应器中，整体形成的栅格衬套包括径向延伸的等离子体限制环和轴向延伸的侧壁衬套。等离子体约束环从基座侧壁在工件支撑表面的平面附近径向向外延伸，并且包括径向槽的环形阵列，每个槽具有对应于等离子体的离子碰撞平均自由路径长度的窄宽度在房间里侧壁衬套覆盖室侧壁的内表面并且从靠近所述工件支撑表面的高度的高度轴向延伸到室顶部。

4. 发明授权

US08974684B2 Synchronous embedded radio frequency pulsing for plasma etching 有权
标题翻译：用于等离子体蚀刻的同步嵌入式射频脉冲
公开(公告)号：US08974684B2
公开(公告)日：2015-03-10
申请号：US13458191
申请日：2012-04-27
申请人： Samer Banna , Ankur Agarwal
发明人： Samer Banna , Ankur Agarwal
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/302 , H01L21/461 , H01J37/32 , H01L21/311
CPC分类号： H01J37/321 , H01J37/32146 , H01J37/32165 , H01L21/31116
摘要： Methods for etching a substrate are provided herein. In some embodiments, a method of etching a substrate may include generating a plasma by providing only a first RF signal having a first frequency and a first duty cycle; applying only a second RF signal to bias the plasma towards the substrate, wherein the second RF signal has the first frequency and a second duty cycle different than the first duty cycle; adjusting a phase variance between the first and second RF signals to control an ion energy distribution in the plasma; and etching the substrate with the plasma.
摘要翻译：本发明提供蚀刻基板的方法。在一些实施例中，蚀刻衬底的方法可以包括通过仅提供具有第一频率和第一占空比的第一RF信号来产生等离子体; 仅施加第二RF信号以将等离子体偏置到衬底，其中第二RF信号具有与第一占空比不同的第一频率和第二占空比; 调整第一和第二RF信号之间的相位差以控制等离子体中的离子能量分布; 并用等离子体蚀刻衬底。

5. 发明申请

US20090284156A1 METHOD AND APPARATUS FOR PULSED PLASMA PROCESSING USING A TIME RESOLVED TUNING SCHEME FOR RF POWER DELIVERY 有权
标题翻译：用于RF功率分配的时间分辨率调谐方案的脉冲等离子体处理的方法和装置
公开(公告)号：US20090284156A1
公开(公告)日：2009-11-19
申请号：US12465319
申请日：2009-05-13
申请人： SAMER BANNA , VALENTIN TODOROW , KARTIK RAMASWAMY
发明人： SAMER BANNA , VALENTIN TODOROW , KARTIK RAMASWAMY
IPC分类号： H05B31/26
CPC分类号： H01J37/32146 , H01J37/321 , H01J37/32155 , H01J37/32174
摘要： Embodiments of the present invention generally provide methods and apparatus for pulsed plasma processing over a wide process window. In some embodiments, an apparatus may include an RF power supply having frequency tuning and a matching network coupled to the RF power supply that share a common sensor for reading reflected RF power reflected back to the RF power supply. In some embodiments, an apparatus may include an RF power supply having frequency tuning and a matching network coupled to the RF power supply that share a common sensor for reading reflected RF power reflected back to the RF power supply and a common controller for tuning each of the RF power supply and the matching network.
摘要翻译：本发明的实施例一般提供了用于在宽处理窗口上脉冲等离子体处理的方法和装置。在一些实施例中，装置可以包括具有频率调谐的RF电源和耦合到RF电源的匹配网络，共享用于读取反射回RF电源的反射RF功率的公共传感器。在一些实施例中，装置可以包括具有频率调谐的RF电源和耦合到RF电源的匹配网络，共享用于读取反射回RF电源的反射RF功率的公共传感器，以及用于调谐每个射频电源和匹配网络。

6. 发明授权

US09287147B2 Substrate support with advanced edge control provisions 有权
标题翻译：基板支持与先进的边缘控制规定
公开(公告)号：US09287147B2
公开(公告)日：2016-03-15
申请号：US13827687
申请日：2013-03-14
申请人： Kyle Tantiwong , Samer Banna
发明人： Kyle Tantiwong , Samer Banna
IPC分类号： H01L21/683 , H01L21/67 , H01L21/687
CPC分类号： H01L21/67109 , H01L21/6831 , H01L21/68735 , H01L21/68785
摘要： Embodiments of the present invention generally provide an apparatus with a recess and a cavity formed therein for future hardware retrofit and uniformity enhancement and methods for controlling the same. In one embodiment, a substrate support includes a supporting body having an outer wall, a ground path disposed against and bounding the outer wall of the supporting body, a mounting plate coupled to a lower surface of the supporting body, wherein the mounting plate includes a lip extending outward from the mounting plate defining an upper surface; and a recess formed at a perimeter of the supporting body above the upper surface of the lip of the mounting plate, the recess lining on the ground path extending at least partially to the mounting plate.
摘要翻译：本发明的实施例通常提供一种装置，其具有形成在其中以用于将来的硬件改进和均匀性增强的凹部和空腔以及用于控制它的方法。在一个实施例中，衬底支撑件包括支撑体，其具有外壁，抵靠并限制支撑体的外壁的接地路径;联接到支撑体的下表面的安装板，其中安装板包括：嘴唇，其从安装板向外延伸，限定上表面; 以及在所述安装板的唇缘的上表面上方的所述支撑体的周边处形成的凹部，所述接地路径上的所述凹陷衬垫至少部分地延伸到所述安装板。

7. 发明申请

US20130105443A1 SYNCHRONOUS EMBEDDED RADIO FREQUENCY PULSING FOR PLASMA ETCHING 有权
标题翻译：用于等离子体蚀刻的同步嵌入式无线电频率脉冲
公开(公告)号：US20130105443A1
公开(公告)日：2013-05-02
申请号：US13458191
申请日：2012-04-27
申请人： SAMER BANNA , ANKUR AGARWAL
发明人： SAMER BANNA , ANKUR AGARWAL
IPC分类号： B44C1/22
CPC分类号： H01J37/321 , H01J37/32146 , H01J37/32165 , H01L21/31116
摘要： Methods for etching a substrate are provided herein. In some embodiments, a method of etching a substrate may include generating a plasma by providing only a first RF signal having a first frequency and a first duty cycle; applying only a second RF signal to bias the plasma towards the substrate, wherein the second RF signal has the first frequency and a second duty cycle different than the first duty cycle; adjusting a phase variance between the first and second RF signals to control an ion energy distribution in the plasma; and etching the substrate with the plasma.
摘要翻译：本发明提供蚀刻基板的方法。在一些实施例中，蚀刻衬底的方法可以包括通过仅提供具有第一频率和第一占空比的第一RF信号来产生等离子体; 仅施加第二RF信号以将等离子体偏置到衬底，其中第二RF信号具有与第一占空比不同的第一频率和第二占空比; 调整第一和第二RF信号之间的相位差以控制等离子体中的离子能量分布; 并用等离子体蚀刻衬底。

8. 发明申请

US20110094994A1 INDUCTIVELY COUPLED PLASMA APPARATUS 审中-公开
标题翻译：电感耦合等离子体装置
公开(公告)号：US20110094994A1
公开(公告)日：2011-04-28
申请号：US12821609
申请日：2010-06-23
申请人： VALENTIN N. TODOROW , SAMER BANNA , ANKUR AGARWAL , ZHIGANG CHEN , TSE-CHIANG WANG , ANDREW NGUYEN , MARTIN JEFF SALINAS , SHAHID RAUF
发明人： VALENTIN N. TODOROW , SAMER BANNA , ANKUR AGARWAL , ZHIGANG CHEN , TSE-CHIANG WANG , ANDREW NGUYEN , MARTIN JEFF SALINAS , SHAHID RAUF
IPC分类号： C23F1/08 , C23F1/00
CPC分类号： H01J37/321 , B44C1/227 , C23C16/505 , H01J37/32165 , H01J37/3244
摘要： Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.
摘要翻译：本文提供了等离子体处理的方法和装置。在一些实施例中，等离子体处理装置包括具有内部处理量的处理室; 设置在处理室附近的将RF能量耦合到处理容积中的第一RF线圈; 以及设置在所述处理室附近以将RF能量耦合到所述处理容积中的第二RF线圈，所述第二RF线圈相对于所述第一RF线圈同轴设置，其中所述第一和第二RF线圈被配置为使得流过所述第一RF线圈的RF电流 RF线圈与RF电流流过RF第二线圈不同相。

9. 发明授权

US08578879B2 Apparatus for VHF impedance match tuning 失效
标题翻译： VHF阻抗匹配调谐装置
公开(公告)号：US08578879B2
公开(公告)日：2013-11-12
申请号：US12511377
申请日：2009-07-29
申请人： Kartik Ramaswamy , Hiroji Hanawa , Kenneth S. Collins , Lawrence Wong , Samer Banna , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Kenneth S. Collins , Lawrence Wong , Samer Banna , Andrew Nguyen
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01P7/04 , H01P7/06
CPC分类号： H01P7/04
摘要： Embodiments of impedance matching networks are provided herein. In some embodiments, an impedance matching network may include a coaxial resonator having an inner and an outer conductor. A tuning capacitor may be provided for variably controlling a resonance frequency of the coaxial resonator. The tuning capacitor may be formed by a first tuning electrode and a second tuning electrode and an intervening dielectric, wherein the first tuning electrode is formed by a portion of the inner conductor. A load capacitor may be provided for variably coupling energy from the inner conductor to a load. The load capacitor may be formed by the inner conductor, an adjustable load electrode, and an intervening dielectric.
摘要翻译：本文提供了阻抗匹配网络的实施例。在一些实施例中，阻抗匹配网络可以包括具有内部和外部导体的同轴谐振器。可以提供调谐电容器以可变地控制同轴谐振器的谐振频率。调谐电容器可以由第一调谐电极和第二调谐电极和中间电介质形成，其中第一调谐电极由内部导体的一部分形成。可以提供负载电容器，用于可变地耦合从内部导体到负载的能量。负载电容器可以由内部导体，可调负载电极和中间电介质形成。

10. 发明授权

US08368308B2 Inductively coupled plasma reactor having RF phase control and methods of use thereof 有权
标题翻译：具有RF相位控制的感应耦合等离子体反应器及其使用方法
公开(公告)号：US08368308B2
公开(公告)日：2013-02-05
申请号：US12717358
申请日：2010-03-04
申请人： Samer Banna , Valentin N. Todorow
发明人： Samer Banna , Valentin N. Todorow
IPC分类号： H01J7/24
CPC分类号： H01J37/32165 , H01J37/321 , H01L21/67069
摘要： Embodiments of the present invention generally provide an inductively coupled plasma (ICP) reactor having a substrate RF bias that is capable of control of the RF phase difference between the ICP source (a first RF source) and the substrate bias (a second RF source) for plasma processing reactors used in the semiconductor industry. Control of the RF phase difference provides a powerful knob for fine process tuning. For example, control of the RF phase difference may be used to control one or more of average etch rate, etch rate uniformity, etch rate skew, critical dimension (CD) uniformity, and CD skew, CD range, self DC bias control, and chamber matching.
摘要翻译：本发明的实施例通常提供一种电感耦合等离子体（ICP）反应器，其具有能够控制ICP源（第一RF源）和衬底偏压（第二RF源）之间的RF相位差的衬底RF偏压，用于半导体工业中使用的等离子体处理反应堆。 RF相位差的控制为精细的过程调整提供了一个强大的旋钮。例如，可以使用RF相位差的控制来控制平均蚀刻速率，蚀刻速率均匀性，蚀刻速率偏斜，临界尺寸（CD）均匀性和CD偏斜，CD范围，自DC偏置控制和室匹配。

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