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1. 发明授权

US08329593B2 Method and apparatus for removing polymer from the wafer backside and edge 失效
标题翻译：从晶片背面和边缘去除聚合物的方法和设备
公开(公告)号：US08329593B2
公开(公告)日：2012-12-11
申请号：US12001989
申请日：2007-12-12
申请人： Imad Yousif , Anchel Sheyner , Ajit Balakrishna , Nancy Fung , Ying Rui , Martin Jeffrey Salinas , Walter R. Merry , Shahid Rauf
发明人： Imad Yousif , Anchel Sheyner , Ajit Balakrishna , Nancy Fung , Ying Rui , Martin Jeffrey Salinas , Walter R. Merry , Shahid Rauf
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68
CPC分类号： H01L21/67069 , H01J37/32357 , H01J37/3244 , H01L21/02087 , H01L21/0209
摘要： Polymer is removed from the backside of a wafer held on a support pedestal in a reactor using an arcuate side gas injection nozzle extending through the reactor side wall with a curvature matched to the wafer edge and supplied with plasma by-products from a remote plasma source.
摘要翻译：使用延伸穿过反应器侧壁的弧形侧气体注入喷嘴从保持在反应器中的支撑基座上的晶片的背面去除聚合物，其具有与晶片边缘匹配的曲率，并且从远程等离子体源提供等离子体副产物。

2. 发明申请

US20110005685A1 PLASMA REACTOR WITH UNIFORM PROCESS RATE DISTRIBUTION BY IMPROVED RF GROUND RETURN PATH 有权
标题翻译：具有均匀加工速率分布的等离子体反应器通过改进的RF接地返回路径
公开(公告)号：US20110005685A1
公开(公告)日：2011-01-13
申请号：US12501966
申请日：2009-07-13
申请人： Andrew Nguyen , Hiroji Hanawa , Kartik Ramaswamy , Samer Banna , Anchel Sheyner , Valentin N. Todorow
发明人： Andrew Nguyen , Hiroji Hanawa , Kartik Ramaswamy , Samer Banna , Anchel Sheyner , Valentin N. Todorow
IPC分类号： C23F1/08 , C23C16/503
CPC分类号： H01J37/16 , H01J37/321 , H01J37/32623 , H01J37/32633 , H01J37/32642 , H01L31/18
摘要： In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.
摘要翻译：在其顶部具有RF等离子体源功率施加器的等离子体反应器中，整体形成的栅格衬套包括径向延伸的等离子体限制环和轴向延伸的侧壁衬套。等离子体约束环从基座侧壁在工件支撑表面的平面附近径向向外延伸，并且包括径向槽的环形阵列，每个槽具有对应于等离子体的离子碰撞平均自由路径长度的窄宽度在房间里侧壁衬套覆盖室侧壁的内表面并且从靠近所述工件支撑表面的高度的高度轴向延伸到室顶部。

3. 发明授权

US08633423B2 Methods and apparatus for controlling substrate temperature in a process chamber 有权
标题翻译：用于控制处理室中的衬底温度的方法和装置
公开(公告)号：US08633423B2
公开(公告)日：2014-01-21
申请号：US13097822
申请日：2011-04-29
申请人： Xing Lin , Douglas A. Buchberger, Jr. , Xiaoping Zhou , Valentin Todorow , Andrew Nguyen , Anchel Sheyner
发明人： Xing Lin , Douglas A. Buchberger, Jr. , Xiaoping Zhou , Valentin Todorow , Andrew Nguyen , Anchel Sheyner
IPC分类号： H05B1/00 , H01L21/683
CPC分类号： H05B6/105 , H01L21/67109 , H01L21/6831
摘要： Methods and apparatus for controlling the temperature of a substrate during processing are provided herein. In some embodiments, an apparatus for retaining and controlling substrate temperature may include a puck of dielectric material; an electrode disposed in the puck proximate a surface of the puck upon which a substrate is to be retained; and a plurality of heater elements disposed in the puck and arranged in concentric rings to provide independent temperature control zones.
摘要翻译：本文提供了在处理期间控制基板的温度的方法和装置。在一些实施例中，用于保持和控制衬底温度的装置可以包括电介质材料的圆盘; 设置在靠近所述圆盘的表面的所述圆盘中的电极，待保持基板的电极; 以及多个加热器元件，其布置在圆盘中并且布置成同心环以提供独立的温度控制区。

4. 发明申请

US20120091108A1 METHODS AND APPARATUS FOR CONTROLLING SUBSTRATE TEMPERATURE IN A PROCESS CHAMBER 有权
标题翻译：用于控制过程室中衬底温度的方法和装置
公开(公告)号：US20120091108A1
公开(公告)日：2012-04-19
申请号：US13097822
申请日：2011-04-29
申请人： XING LIN , DOUGLAS A. BUCHBERGER, Jr. , XIAOPING ZHOU , VALENTIN TODOROW , ANDREW NGUYEN , ANCHEL SHEYNER
发明人： XING LIN , DOUGLAS A. BUCHBERGER, Jr. , XIAOPING ZHOU , VALENTIN TODOROW , ANDREW NGUYEN , ANCHEL SHEYNER
IPC分类号： H05B1/00
CPC分类号： H05B6/105 , H01L21/67109 , H01L21/6831
摘要： Methods and apparatus for controlling the temperature of a substrate during processing are provided herein. In some embodiments, an apparatus for retaining and controlling substrate temperature may include a puck of dielectric material; an electrode disposed in the puck proximate a surface of the puck upon which a substrate is to be retained; and a plurality of heater elements disposed in the puck and arranged in concentric rings to provide independent temperature control zones.
摘要翻译：本文提供了在处理期间控制基板的温度的方法和装置。在一些实施例中，用于保持和控制衬底温度的装置可以包括电介质材料的圆盘; 设置在靠近所述圆盘的表面的所述圆盘中的电极，待保持基板的电极; 以及多个加热器元件，其布置在圆盘中并且布置成同心环以提供独立的温度控制区。

5. 发明申请

US20150371877A1 SUBSTRATE SUPPORT WITH SYMMETRICAL FEED STRUCTURE 审中-公开
标题翻译：基板支撑与对称馈电结构
公开(公告)号：US20150371877A1
公开(公告)日：2015-12-24
申请号：US14840204
申请日：2015-08-31
申请人： XING LIN , DOUGLAS A. BUCHBERGER, JR. , XIAOPING ZHOU , ANDREW NGUYEN , ANCHEL SHEYNER
发明人： XING LIN , DOUGLAS A. BUCHBERGER, JR. , XIAOPING ZHOU , ANDREW NGUYEN , ANCHEL SHEYNER
IPC分类号： H01L21/67 , H01J37/32
CPC分类号： H01L21/67069 , H01J37/32532 , H01J37/32577 , H01J37/32715 , H01J37/32724 , H01L21/6831
摘要： Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.
摘要翻译：本文公开了用于处理衬底的装置。在一些实施例中，衬底支撑件可以包括具有用于支撑衬底的支撑表面的衬底支撑件，衬底支撑件具有中心轴线; 设置在所述基板支撑件内的第一电极，用于当设置在所述支撑表面上时向基板提供RF功率; 内部导体，其围绕第一电极的与支撑表面相对的表面的中心耦合到第一电极，其中内部导体是管状的，并且从第一电极沿着远离支撑表面的方向平行于中心轴并围绕中心轴线延伸的基板支撑; 设置在内部导体周围的外部导体; 以及设置在所述内部和外部导体之间的外部电介质层，所述外部电介质层将所述外部导体与所述内部导体电隔离。外部导体可以耦合到电气接地。

6. 发明申请

US20110269314A1 PROCESS CHAMBERS HAVING SHARED RESOURCES AND METHODS OF USE THEREOF 审中-公开
标题翻译：具有共享资源的过程池及其使用方法
公开(公告)号：US20110269314A1
公开(公告)日：2011-11-03
申请号：US12905032
申请日：2010-10-14
申请人： JARED AHMAD LEE , JAMES P. CRUSE , ANDREW NGUYEN , CORIE LYNN COBB , MING XU , MARTIN JEFF SALINAS , ANCHEL SHEYNER
发明人： JARED AHMAD LEE , JAMES P. CRUSE , ANDREW NGUYEN , CORIE LYNN COBB , MING XU , MARTIN JEFF SALINAS , ANCHEL SHEYNER
IPC分类号： H01L21/3065
CPC分类号： H01L21/67109 , H01L21/6719
摘要： Process chambers having shared resources and methods of use are provided. In some embodiments, substrate processing systems may include a first process chamber having a first substrate support disposed within the first process chamber, wherein the first substrate support has a first heater and a first cooling plate to control a temperature of the first substrate support; a second process chamber having a second substrate support disposed within the second process chamber, wherein the second substrate support has a second heater and a second cooling plate to control a temperature of the second substrate support; and a shared heat transfer fluid source having an outlet to provide a heat transfer fluid to the first cooling plate and the second cooling plate and an inlet to receive the heat transfer fluid from the first cooling plate and the second cooling plate.
摘要翻译：提供了具有共享资源和使用方法的过程室。在一些实施例中，衬底处理系统可以包括第一处理室，其具有设置在第一处理室内的第一衬底支撑件，其中第一衬底支撑件具有第一加热器和第一冷却板以控制第一衬底支撑件的温度; 第二处理室，具有设置在所述第二处理室内的第二基板支撑件，其中所述第二基板支撑件具有第二加热器和第二冷却板，以控制所述第二基板支撑件的温度; 以及共用传热流体源，其具有出口以向第一冷却板和第二冷却板提供传热流体，以及从第一冷却板和第二冷却板接收传热流体的入口。

7. 发明申请

US20110120505A1 APPARATUS AND METHOD FOR FRONT SIDE PROTECTION DURING BACKSIDE CLEANING 审中-公开
标题翻译：背景清洁期间前侧保护的装置和方法
公开(公告)号：US20110120505A1
公开(公告)日：2011-05-26
申请号：US13017569
申请日：2011-01-31
申请人： IMAD YOUSIF , Ying Rui , Nancy Fung , Martin Jeffrey Salinas , Ajit Balakrishna , Anchel Sheyner , Shahid Rauf , Walter R. Merry
发明人： IMAD YOUSIF , Ying Rui , Nancy Fung , Martin Jeffrey Salinas , Ajit Balakrishna , Anchel Sheyner , Shahid Rauf , Walter R. Merry
IPC分类号： B08B3/00 , B08B13/00 , H05H1/24 , B05B1/00
CPC分类号： H01L21/6708 , B05B1/18
摘要： Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region.
摘要翻译：本发明的实施例提供了在处理基板的侧面和背面时用于正面保护的装置和方法。本发明的一个实施例提供了一种喷淋头，其配置为在背面蚀刻处理期间向基板的前侧提供净化气体。喷头包括构造成设置在基板的前侧上的主体。主体具有配置为面向基板的前侧的工艺表面。处理表面具有外圆周区域，中心区域，外部中心区域和中心区域之间的中间区域。第一多个孔分布在外部圆形区域中，并被配置成将清洗气体引导到衬底前侧的边缘区域。没有气体输送孔分布在中间区域的大部分内。

8. 发明申请

US20120097332A1 SUBSTRATE SUPPORT WITH SYMMETRICAL FEED STRUCTURE 有权
标题翻译：基板支撑与对称馈电结构
公开(公告)号：US20120097332A1
公开(公告)日：2012-04-26
申请号：US12910547
申请日：2010-10-22
申请人： XING LIN , DOUGLAS A. BUCHBERGER, JR. , XIAOPING ZHOU , ANDREW NGUYEN , ANCHEL SHEYNER
发明人： XING LIN , DOUGLAS A. BUCHBERGER, JR. , XIAOPING ZHOU , ANDREW NGUYEN , ANCHEL SHEYNER
IPC分类号： C23F1/08
CPC分类号： H01L21/67069 , H01J37/32532 , H01J37/32577 , H01J37/32715 , H01J37/32724 , H01L21/6831
摘要： Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.
摘要翻译：本文公开了用于处理衬底的装置。在一些实施例中，衬底支撑件可以包括具有用于支撑衬底的支撑表面的衬底支撑件，衬底支撑件具有中心轴线; 设置在所述基板支撑件内的第一电极，用于当设置在所述支撑表面上时向基板提供RF功率; 内部导体，其围绕第一电极的与支撑表面相对的表面的中心耦合到第一电极，其中内部导体是管状的，并且从第一电极沿着远离支撑表面的方向平行于中心轴并围绕中心轴线延伸的基板支撑; 设置在内部导体周围的外部导体; 以及设置在所述内部和外部导体之间的外部电介质层，所述外部电介质层将所述外部导体与所述内部导体电隔离。外部导体可以耦合到电气接地。

9. 发明授权

US07879183B2 Apparatus and method for front side protection during backside cleaning 失效
标题翻译：背面清洁时的前侧保护装置和方法
公开(公告)号：US07879183B2
公开(公告)日：2011-02-01
申请号：US12038499
申请日：2008-02-27
申请人： Imad Yousif , Ying Rui , Nancy Fung , Martin Jeffrey Salinas , Ajit Balakrishna , Anchel Sheyner , Shahid Rauf , Walter R. Merry
发明人： Imad Yousif , Ying Rui , Nancy Fung , Martin Jeffrey Salinas , Ajit Balakrishna , Anchel Sheyner , Shahid Rauf , Walter R. Merry
IPC分类号： H01L21/306 , C23C16/00 , C23C16/455
CPC分类号： H01L21/6708 , B05B1/18
摘要： Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region.
摘要翻译：本发明的实施例提供了在处理基板的侧面和背面时用于正面保护的装置和方法。本发明的一个实施例提供了一种喷淋头，其配置为在背面蚀刻处理期间向基板的前侧提供净化气体。喷头包括构造成设置在基板的前侧上的主体。主体具有配置为面向基板的前侧的工艺表面。处理表面具有外圆周区域，中心区域，外部中心区域和中心区域之间的中间区域。第一多个孔分布在外部圆形区域中，并被配置成将清洗气体引导到衬底前侧的边缘区域。没有气体输送孔分布在中间区域的大部分内。

10. 发明申请

US20090214798A1 APPARATUS AND METHOD FOR FRONT SIDE PROTECTION DURING BACKSIDE CLEANING 失效
标题翻译：背景清洁期间前侧保护的装置和方法
公开(公告)号：US20090214798A1
公开(公告)日：2009-08-27
申请号：US12038499
申请日：2008-02-27
申请人： IMAD YOUSIF , Ying Rui , Nancy Fung , Martin Jeffrey Salinas , Ajit Balakrishna , Anchel Sheyner , Shahid Rauf , Walter R. Merry
发明人： IMAD YOUSIF , Ying Rui , Nancy Fung , Martin Jeffrey Salinas , Ajit Balakrishna , Anchel Sheyner , Shahid Rauf , Walter R. Merry
IPC分类号： H01L21/306 , H01L21/308 , H01L21/67 , B05B1/14
CPC分类号： H01L21/6708 , B05B1/18
摘要： Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region.
摘要翻译：本发明的实施例提供了在处理基板的侧面和背面时用于正面保护的装置和方法。本发明的一个实施例提供了一种喷淋头，其配置为在背面蚀刻处理期间向基板的前侧提供净化气体。喷头包括构造成设置在基板的前侧上的主体。主体具有配置为面向基板的前侧的工艺表面。处理表面具有外圆周区域，中心区域，外部中心区域和中心区域之间的中间区域。第一多个孔分布在外部圆形区域中，并被配置成将清洗气体引导到衬底前侧的边缘区域。没有气体输送孔分布在中间区域的大部分内。

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