专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110005685A1 PLASMA REACTOR WITH UNIFORM PROCESS RATE DISTRIBUTION BY IMPROVED RF GROUND RETURN PATH 有权
标题翻译：具有均匀加工速率分布的等离子体反应器通过改进的RF接地返回路径
公开(公告)号：US20110005685A1
公开(公告)日：2011-01-13
申请号：US12501966
申请日：2009-07-13
申请人： Andrew Nguyen , Hiroji Hanawa , Kartik Ramaswamy , Samer Banna , Anchel Sheyner , Valentin N. Todorow
发明人： Andrew Nguyen , Hiroji Hanawa , Kartik Ramaswamy , Samer Banna , Anchel Sheyner , Valentin N. Todorow
IPC分类号： C23F1/08 , C23C16/503
CPC分类号： H01J37/16 , H01J37/321 , H01J37/32623 , H01J37/32633 , H01J37/32642 , H01L31/18
摘要： In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.
摘要翻译：在其顶部具有RF等离子体源功率施加器的等离子体反应器中，整体形成的栅格衬套包括径向延伸的等离子体限制环和轴向延伸的侧壁衬套。等离子体约束环从基座侧壁在工件支撑表面的平面附近径向向外延伸，并且包括径向槽的环形阵列，每个槽具有对应于等离子体的离子碰撞平均自由路径长度的窄宽度在房间里侧壁衬套覆盖室侧壁的内表面并且从靠近所述工件支撑表面的高度的高度轴向延伸到室顶部。

2. 发明授权

US08360003B2 Plasma reactor with uniform process rate distribution by improved RF ground return path 有权
标题翻译：等离子体反应器具有均匀的加工速率分布，通过改进的射频接地回路
公开(公告)号：US08360003B2
公开(公告)日：2013-01-29
申请号：US12501966
申请日：2009-07-13
申请人： Andrew Nguyen , Hiroji Hanawa , Kartik Ramaswamy , Samer Banna , Anchel Sheyner , Valentin N. Todorow
发明人： Andrew Nguyen , Hiroji Hanawa , Kartik Ramaswamy , Samer Banna , Anchel Sheyner , Valentin N. Todorow
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/16 , H01J37/321 , H01J37/32623 , H01J37/32633 , H01J37/32642 , H01L31/18
摘要： In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.
摘要翻译：在其顶部具有RF等离子体源功率施加器的等离子体反应器中，整体形成的栅格衬套包括径向延伸的等离子体限制环和轴向延伸的侧壁衬套。等离子体约束环从基座侧壁在工件支撑表面的平面附近径向向外延伸，并且包括径向槽的环形阵列，每个槽具有对应于等离子体的离子碰撞平均自由路径长度的窄宽度在房间里侧壁衬套覆盖室侧壁的内表面并且从靠近所述工件支撑表面的高度的高度轴向延伸到室顶部。

3. 发明申请

US20080179007A1 REACTOR FOR WAFER BACKSIDE POLYMER REMOVAL USING PLASMA PRODUCTS IN A LOWER PROCESS ZONE AND PURGE GASES IN AN UPPER PROCESS ZONE 审中-公开
标题翻译：在下一个工艺区域中使用等离子体产品并在上一个工艺区域中使用过滤器的水分离反应器
公开(公告)号：US20080179007A1
公开(公告)日：2008-07-31
申请号：US11685770
申请日：2007-03-14
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
IPC分类号： C23F1/00
CPC分类号： H01L21/68764 , H01J37/32357 , H01J37/32366 , H01L21/67069 , H01L21/67115 , H01L21/68728
摘要： A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. The reactor further includes workpiece support apparatus within the chamber configured for a workpiece to be placed thereon with its front side facing the ceiling. The support apparatus is configured to leave at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with an outer edge of the workpiece, the narrow gap being on the order of about 1% of the workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone, the reactor further comprising a vacuum pump coupled to the lower process zone. An external plasma-generating chamber is coupled to the chamber, the external plasma-generating chamber configured to introduce a plasma by-product into the lower process zone, and a supply of a polymer etch precursor gas to the external plasma-generating chamber. The ceiling includes a gas distribution plate facing the upper process zone, the reactor further comprising a purge gas supply coupled to the gas distribution plate.
摘要翻译：提供反应器用于从工件的背面去除聚合物。反应器包括具有天花板，地板和圆柱形侧壁的真空室。所述反应器还包括在所述室内的工件支撑装置，所述工件支撑装置构造成用于要放置在其上的工件，其前侧面向天花板。支撑装置被配置为留下被暴露的工件的后侧的至少一个环形周边。限制构件与工件的外边缘限定窄间隙，窄间隙约为工件直径的约1％，窄间隙对应于在上工艺区和下工艺之间分隔室的边界反应器还包括耦合到下处理区的真空泵。外部等离子体产生室耦合到室，外部等离子体发生室被配置为将等离子体副产物引入下部工艺区域，以及向外部等离子体产生室供应聚合物蚀刻前体气体。天花板包括面向上处理区的气体分配板，反应器还包括连接到气体分配板的净化气体供应源。

4. 发明申请

US20080179290A1 TEMPERATURE-SWITCHED PROCESS FOR WAFER BACKSIDE POLYMER REMOVAL AND FRONT SIDE PHOTORESIST STRIP 审中-公开
标题翻译：用于后置聚合物去离子和前侧光电隔离带的温度切换过程
公开(公告)号：US20080179290A1
公开(公告)日：2008-07-31
申请号：US11685915
申请日：2007-03-14
申请人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
发明人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
IPC分类号： C23F1/00
CPC分类号： H01L21/68764 , H01J37/32357 , H01J37/32366 , H01L21/67069 , H01L21/67115 , H01L21/68728
摘要： A workpiece is supported on the backside in a vacuum chamber while leaving at least a peripheral annular portion of a backside of the workpiece exposed. The process first increases the temperature of the workpiece starting at a temperature below about 200 degrees C. The edge of the workpiece is confined so as to establish a gap at the edge on the order of about 1% of the diameter of the chamber, the gap corresponding to a boundary between an upper process zone containing the front side and a lower process zone containing the backside. Before the workpiece temperature exceeds about 200 degrees C., backside polymer is removed using a first plasma containing polymer etch species in the lower process zone. After the workpiece temperature reaches about 300 degrees C., photoresist is stripped from the workpiece front side using by-products of a second plasma containing a photoresist strip species in the upper process zone.
摘要翻译：工件被支撑在真空室的背面，同时留下工件的后侧的周边环形部分露出。该过程首先在低于约200℃的温度下开始增加工件的温度。工件的边缘被限制以便在边缘处建立约1％直径的间隙，间隙对应于包含前侧的上处理区域和包含背面的下处理区域之间的边界。在工件温度超过约200℃之前，使用在较低工艺区域中的含有聚合物蚀刻物质的第一等离子体来去除背面聚合物。在工件温度达到约300摄氏度之后，使用在上工艺区域中含有光刻带材料的第二等离子体的副产品从工件正面剥离光致抗蚀剂。

5. 发明申请

US20080179288A1 PROCESS FOR WAFER BACKSIDE POLYMER REMOVAL AND WAFER FRONT SIDE SCAVENGER PLASMA 审中-公开
标题翻译： WAFER背面聚合物去除方法和WAFER FRONT SIDE SCAVENGER PLASMA
公开(公告)号：US20080179288A1
公开(公告)日：2008-07-31
申请号：US11685767
申请日：2007-03-14
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
IPC分类号： C23F1/00
CPC分类号： H01L21/0206 , H01L21/67115 , H01L21/68728 , H01L21/68735 , H01L21/68764
摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the front side and a lower process zone containing the backside. A first plasma is generated in a lower external chamber from a polymer etch precursor gas, and an etchant by-product is introduced from the first plasma into the lower process zone. A second plasma is generated in an upper external plasma chamber from a precursor gas of a scavenger of the etchant by-product, and scavenger species are introduced from the second plasma into the upper process zone.
摘要翻译：提供了从工件的背面除去聚合物的方法。该工艺包括在真空室的背面支撑工件，同时使背面的外围环形部分露出。该方法还包括将工件边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含前侧的上工艺区域之间的边界和一个含有背面的下部工艺区。在来自聚合物蚀刻前体气体的下部外部室中产生第一等离子体，并且将蚀刻剂副产物从第一等离子体引入下部工艺区域。在来自蚀刻剂副产物的清除剂的前体气体的上部外部等离子体室中产生第二等离子体，并且清除剂物质从第二等离子体引入上部工艺区域。

6. 发明申请

US20080179009A1 REACTOR FOR WAFER BACKSIDE POLYMER REMOVAL HAVING AN ETCH PLASMA JET STREAM SOURCE 失效
标题翻译：用于离子聚合物去离子的反应器具有等离子体喷射流动源
公开(公告)号：US20080179009A1
公开(公告)日：2008-07-31
申请号：US11685775
申请日：2007-03-14
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
IPC分类号： H01L21/306
CPC分类号： H01L21/68764 , H01J37/32357 , H01J37/32366 , H01L21/67069 , H01L21/67115 , H01L21/68728
摘要： A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. A workpiece support apparatus within the chamber is configured to support a workpiece thereon so that the workpiece has its front side facing the ceiling. The support apparatus leaves at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with the outer edge of the workpiece, the narrow gap being on the order of about 1% of the workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone. A vacuum pump is coupled to the lower process zone. The reactor further includes a local plasma-generating chamber and a nozzle disposed on a side of the workpiece support apparatus that is opposite a support surface of the workpiece support apparatus where the workpiece is to reside, the nozzle coupled to receive plasma from the local plasma-generating chamber. The nozzle is directed at a target area of the annular periphery so as to direct a plasma stream at the workpiece backside. A supply of a polymer etch precursor gas is coupled to the local plasma-generating chamber. A rotation actuator rotates the workpiece support apparatus relative to the nozzle.
摘要翻译：提供反应器用于从工件的背面去除聚合物。反应器包括具有天花板，地板和圆柱形侧壁的真空室。室内的工件支撑装置构造成在其上支撑工件，使得工件的前侧面对天花板。支撑装置离开被暴露的工件的背面的至少一个环形周边。约束构件与工件的外边缘限定窄间隙，窄间隙约为工件直径的约1％，窄间隙对应于在上工艺区和下工艺之间划分室的边界区。真空泵联接到下部处理区。反应器还包括局部等离子体产生室和设置在工件支撑装置的与工件所在的工件支撑装置的支撑表面相对的一侧的喷嘴，喷嘴被连接以接收来自局部等离子体的等离子体生成室。喷嘴指向环形周边的目标区域，以便在工件背面引导等离子体流。聚合物蚀刻前体气体的供应物连接到局部等离子体产生室。旋转致动器相对于喷嘴旋转工件支撑装置。

7. 发明申请

US20080178913A1 PROCESS FOR WAFER BACKSIDE POLYMER REMOVAL WITH A RING OF PLASMA UNDER THE WAFER 审中-公开
标题翻译：用WAFER的等离子体环拆除背面聚合物的方法
公开(公告)号：US20080178913A1
公开(公告)日：2008-07-31
申请号：US11685902
申请日：2007-03-14
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
IPC分类号： B08B7/00
CPC分类号： H01L21/68764 , H01J37/32357 , H01J37/32366 , H01L21/67069 , H01L21/67115 , H01L21/68728
摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving at least a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the wafer front side and a lower process zone containing the wafer backside. The process also includes providing a polymer etch precursor gas underneath the backside edge of the workpiece and applying RF power to a region underlying the backside edge of the workpiece to generate a first plasma of polymer etch species concentrated in an annular ring concentric with and underneath the backside edge of the workpiece.
摘要翻译：提供了从工件的背面除去聚合物的方法。该方法包括在真空室的背面支撑工件，同时至少留下背面的周边环形部分。该方法还包括将工件边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含晶片前端的上工艺区域之间的边界侧面和下部工艺区域，其中包含晶片背面。该方法还包括在工件的后边缘下方提供聚合物蚀刻前体气体，并将RF功率施加到工件的后边缘下方的区域，以产生聚集在一起的聚合物蚀刻物质等离子体工件的后边缘。

8. 发明授权

US07967996B2 Process for wafer backside polymer removal and wafer front side photoresist removal 失效
标题翻译：用于晶片背面聚合物去除和晶片前端光致抗蚀剂去除的工艺
公开(公告)号：US07967996B2
公开(公告)日：2011-06-28
申请号：US11801409
申请日：2007-05-08
申请人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Shahid Rauf , Ajit Balakrishna , Valentin N. Todorow , Kartik Ramaswamy , Martin Jeffrey Salinas , Imad Yousif , Walter R. Merry , Ying Rui , Michael R. Rice
发明人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Shahid Rauf , Ajit Balakrishna , Valentin N. Todorow , Kartik Ramaswamy , Martin Jeffrey Salinas , Imad Yousif , Walter R. Merry , Ying Rui , Michael R. Rice
IPC分类号： B44C1/22
CPC分类号： B08B7/00 , B08B7/0035 , H01J37/32357 , H01J37/3244 , H01L21/0206 , H01L21/02063 , H01L21/0209 , H01L21/67069 , H01L21/67115 , H01L21/68764
摘要： A process is provided for removing polymer from a backside of a workpiece and/or photoresist from a front side of the workpiece. For backside polymer removal, the wafer is positioned near the ceiling to above a localized or remote plasma source having a side outlet through the sidewall of the chamber, and backside polymer is removed by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer backside. For front side photoresist removal, the wafer is positioned away from the ceiling and below the side outlet of the localized plasma source, and front side photoresist is remove by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer front side.
摘要翻译：提供了用于从工件的前侧从工件和/或光致抗蚀剂的背面去除聚合物的方法。对于背面聚合物去除，晶片位于天花板附近，位于具有通过室的侧壁的侧出口的局部或远程等离子体源的上方，并且通过在从侧面出口流动等离子体副产物的同时旋转工件来去除背面聚合物到晶圆背面。对于前侧光致抗蚀剂去除，晶片远离天花板并位于局部等离子体源的侧出口下方，并且通过在从侧出口流到晶片正面的等离子体副产物流动的同时旋转工件来除去前侧光致抗蚀剂。

9. 发明申请

US20080179291A1 Process for wafer backside polymer removal and wafer front side photoresist removal 失效
标题翻译：用于晶片背面聚合物去除和晶片前端光致抗蚀剂去除的工艺
公开(公告)号：US20080179291A1
公开(公告)日：2008-07-31
申请号：US11801409
申请日：2007-05-08
申请人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Shahid Rauf , Ajit Balakrishna , Valentin N. Todorow , Kartik Ramaswamy , Martin Jeffrey Salinas , Imad Yousif , Walter R. Merry , Ying Rui , Michael R. Rice
发明人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Shahid Rauf , Ajit Balakrishna , Valentin N. Todorow , Kartik Ramaswamy , Martin Jeffrey Salinas , Imad Yousif , Walter R. Merry , Ying Rui , Michael R. Rice
IPC分类号： C23F1/00
CPC分类号： B08B7/00 , B08B7/0035 , H01J37/32357 , H01J37/3244 , H01L21/0206 , H01L21/02063 , H01L21/0209 , H01L21/67069 , H01L21/67115 , H01L21/68764
摘要： A process is provided for removing polymer from a backside of a workpiece and/or photoresist from a front side of the workpiece. For backside polymer removal, the wafer is positioned near the ceiling to above a localized or remote plasma source having a side outlet through the sidewall of the chamber, and backside polymer is removed by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer backside. For front side photoresist removal, the wafer is positioned away from the ceiling and below the side outlet of the localized plasma source, and front side photoresist is remove by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer front side.
摘要翻译：提供了用于从工件的前侧从工件和/或光致抗蚀剂的背面去除聚合物的方法。对于背面聚合物去除，晶片位于天花板附近，位于具有通过室的侧壁的侧出口的局部或远程等离子体源的上方，并且通过在从侧面出口流动等离子体副产物的同时旋转工件来去除背面聚合物到晶圆背面。对于前侧光致抗蚀剂去除，晶片远离天花板并位于局部等离子体源的侧出口下方，并且通过在从侧出口流到晶片正面的等离子体副产物流动的同时旋转工件来除去前侧光致抗蚀剂。

10. 发明授权

US08299391B2 Field enhanced inductively coupled plasma (Fe-ICP) reactor 有权
标题翻译：场增强电感耦合等离子体（Fe-ICP）反应器
公开(公告)号：US08299391B2
公开(公告)日：2012-10-30
申请号：US12182342
申请日：2008-07-30
申请人： Valentin N. Todorow , Samer Banna , Kartik Ramaswamy , Michael D. Willwerth
发明人： Valentin N. Todorow , Samer Banna , Kartik Ramaswamy , Michael D. Willwerth
IPC分类号： B23K10/00
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/321
摘要： Embodiments of field enhanced inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a field enhanced inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes one or more coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, one or more electrodes configured to capacitively couple RF energy into the process chamber to form the plasma therein, wherein the one or more electrodes are electrically coupled to one of the one or more coils, and an RF generator coupled to the one or more inductive coils and the one or more electrodes. In some embodiments, a heater element may be disposed between the dielectric lid and the plasma source assembly.
摘要翻译：本文提供了场增强电感耦合等离子体反应器的实施例及其使用方法。在一些实施例中，场增强感应耦合等离子体处理系统可包括具有电介质盖和设置在电介质盖上方的等离子体源组件的处理室。等离子体源组件包括一个或多个线圈，其配置成将RF能量感应耦合到处理室中以在其中形成和维持等离子体，一个或多个电极被配置为将RF能量电容耦合到处理室中以在其中形成等离子体，其中，或多个电极电耦合到所述一个或多个线圈中的一个，以及耦合到所述一个或多个感应线圈和所述一个或多个电极的RF发生器。在一些实施例中，加热器元件可以设置在电介质盖和等离子体源组件之间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式