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1. 发明授权

US08368046B2 Light-emitting element 有权
公开(公告)号：US08368046B2
公开(公告)日：2013-02-05
申请号：US12372585
申请日：2009-02-17
申请人： Shin Yokoyama
发明人： Shin Yokoyama
IPC分类号： H01L29/06 , H01L31/072
CPC分类号： H01L33/06 , B82Y10/00 , H01L29/127 , H01L33/26
摘要： A light-emitting element includes a n-type silicon oxide film and a p-type silicon nitride film. The n-type silicon oxide film and the p-type silicon nitride film formed on the n-type silicon oxide film form a p-n junction. The n-type silicon oxide film includes a plurality of quantum dots composed of n-type Si while the p-type silicon nitride film includes a plurality of quantum dots composed of p-type Si. Light emission occurs from the boundary between the n-type silicon oxide film and the p-type silicon nitride film by injecting electrons from the n-type silicon oxide film side and holes from the p-type silicon nitride film side.

2. 发明申请

US20120055506A1 SUBSTRATE CLEANING METHOD 审中-公开
标题翻译：基板清洗方法
公开(公告)号：US20120055506A1
公开(公告)日：2012-03-08
申请号：US13255758
申请日：2010-03-10
申请人： Tsuyoshi Moriya , Shin Yokoyama , Kikuo Okuyama
发明人： Tsuyoshi Moriya , Shin Yokoyama , Kikuo Okuyama
IPC分类号： B08B7/00
CPC分类号： H01L21/67051 , H01L21/02057
摘要： In a substrate cleaning method for cleaning a substrate with fine patterns having grooves or holes whose representative length is 0.1 mm or less, the substrate is arranged in a space which contains water, such that the substrate faces an acute-angled leading end of a discharge electrode which can be cooled, with a predetermined interval therebetween, with a counter electrode being interposed at a predetermined position between the substrate and the discharge electrode. Then, a predetermined voltage is applied between the discharge electrode and the counter electrode while generating dew condensation in the discharge electrode by cooling the discharge electrode. The substrate is cleaned by generating an aerosol containing water particles having sizes of equal to less than 10 nm in the leading end of the discharge electrode and spraying the aerosol on the substrate.
摘要翻译：在用具有代表长度为0.1mm以下的槽或孔的精细图案的基板进行清洗的基板清洗方法中，将基板配置在包含水的空间中，使得基板朝向排出口的锐角前端电极，其间可以预定的间隔被冷却，反电极插入在基板和放电电极之间的预定位置处。然后，通过冷却放电电极，在放电电极和对电极之间施加预定的电压，同时在放电电极中产生结露。通过在放电电极的前端产生含有等于小于10nm的尺寸的水粒子的气溶胶来清洗基板，并将该气溶胶喷洒在基板上。

3. 发明授权

US08044382B2 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US08044382B2
公开(公告)日：2011-10-25
申请号：US12601794
申请日：2008-03-26
申请人： Shin Yokoyama , Yoshiteru Amemiya
发明人： Shin Yokoyama , Yoshiteru Amemiya
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L21/331 , H01L21/00
CPC分类号： H01L33/26 , H01L33/06 , H01L33/08 , Y10S438/962 , Y10S977/72 , Y10S977/721 , Y10S977/774
摘要： A light-emitting device includes an n-type silicon thin film (2), a silicon thin film (3), and a p-type silicon thin film (4). The silicon thin film (3) is formed on the n-type silicon thin film (2) and the p-type silicon thin film (4) is formed on the silicon thin film (3). The n-type silicon thin film (2), the silicon thin film (3), and the p-type silicon thin film (4) form a pin junction. The n-type silicon thin film (2) includes a plurality of quantum dots (21) composed of n-type Si. The silicon thin film (3) includes a plurality of quantum dots (31) composed of p-type Si. The p-type silicon thin film (4) includes a plurality of quantum dots (41) composed of p-type Si. Electrons are injected from the n-type silicon thin film (2) side and holes are injected from the p-type silicon thin film (4) side, whereby light is emitted at a silicon nitride film (3).
摘要翻译：发光装置包括n型硅薄膜（2），硅薄膜（3）和p型硅薄膜（4）。在n型硅薄膜（2）上形成硅薄膜（3），在硅薄膜（3）上形成p型硅薄膜（4）。 n型硅薄膜（2），硅薄膜（3）和p型硅薄膜（4）形成pin结。 n型硅薄膜（2）包括由n型Si构成的多个量子点（21）。硅薄膜（3）包括由p型Si构成的多个量子点（31）。 p型硅薄膜（4）包括由p型Si构成的多个量子点（41）。从n型硅薄膜（2）侧注入电子，从p型硅薄膜（4）侧注入空穴，在氮化硅膜（3）发光。

4. 发明授权

US07907847B2 Optical integrated circuit apparatus 有权
标题翻译：光集成电路设备
公开(公告)号：US07907847B2
公开(公告)日：2011-03-15
申请号：US12328341
申请日：2008-12-04
申请人： Yuichiro Tanushi , Shin Yokoyama , Masato Suzuki , Yoshiteru Amemiya
发明人： Yuichiro Tanushi , Shin Yokoyama , Masato Suzuki , Yoshiteru Amemiya
IPC分类号： H04B10/00
CPC分类号： H04B10/801
摘要： Optical waveguides and optical transceivers are formed on one main surface of a semiconductor substrate. A light source is provided on one side surface of the semiconductor substrate, and emits light to the optical waveguides. In each of the optical transceivers, when a voltage is applied to a silicon layer, an optical resonator resonates with any one of the light components traveling through the optical waveguides, and emits the light component to an optical transmission member. In addition, in each of the optical transceivers, when a voltage is applied to the silicon layer, another optical resonators resonate with light traveling through the optical transmission member and emit the resonance light to photodetectors, respectively.
摘要翻译：光波导和光收发器形成在半导体衬底的一个主表面上。光源设置在半导体衬底的一个侧表面上，并向光波导发光。在每个光收发器中，当向硅层施加电压时，光谐振器与穿过光波导的任何一个光分量谐振，并将光分量发射到光传输部件。此外，在每个光收发器中，当向硅层施加电压时，另一个光谐振器与传播通过光传输部件的光共振，并将谐振光分别发射到光电检测器。

5. 发明申请

US20130143344A1 LIGHT-EMITTING ELEMENT 有权
标题翻译：发光元件
公开(公告)号：US20130143344A1
公开(公告)日：2013-06-06
申请号：US13755846
申请日：2013-01-31
申请人： Shin Yokoyama
发明人： Shin Yokoyama
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , B82Y10/00 , H01L29/127 , H01L33/26
摘要： A light-emitting element includes a n-type silicon oxide film and a p-type silicon nitride film. The n-type silicon oxide film and the p-type silicon nitride film formed on the n-type silicon oxide film form a p-n junction. The n-type silicon oxide film includes a plurality of quantum dots composed of n-type Si while the p-type silicon nitride film includes a plurality of quantum dots composed of p-type Si. Light emission occurs from the boundary between the n-type silicon oxide film and the p-type silicon nitride film by injecting electrons from the n-type silicon oxide film side and holes from the p-type silicon nitride film side.
摘要翻译：发光元件包括n型氧化硅膜和p型氮化硅膜。在n型氧化硅膜上形成的n型氧化硅膜和p型氮化硅膜形成p-n结。 n型氧化硅膜由n型Si构成的多个量子点构成，p型氮化硅膜由p型Si构成的多个量子点构成。通过从n型氧化硅膜侧注入电子和从p型氮化硅膜侧的空穴，发生从n型氧化硅膜和p型氮化硅膜之间的边界发光。

6. 发明授权

US07847225B2 Optical neural network 有权
标题翻译：光学神经网络
公开(公告)号：US07847225B2
公开(公告)日：2010-12-07
申请号：US12602072
申请日：2008-05-02
申请人： Shin Yokoyama
发明人： Shin Yokoyama
IPC分类号： G06F15/18 , G06E3/00
CPC分类号： G06N3/067 , H01L27/15 , H01S5/0425 , H01S5/183 , H01S5/423 , H01S2301/18
摘要： An input layer outputs light having a relatively narrow emission angle distribution to a middle layer as an output signal if the signal level of input signal is relatively high and outputs light having a relatively broad emission angle distribution to the middle layer as the output signal if the signal level of input signal is relatively low. The middle layer outputs light having a relatively narrow emission angle distribution as an output signal to an output layer if the signal level of the output signal from input layer is relatively high and outputs light having a relatively broad emission angle distribution to the output layer as an output signal if the signal level of the output signal from the input layer is relatively low.
摘要翻译：如果输入信号的信号电平相对较高，则输入层将具有较窄发射角分布的光输出到中间层作为输出信号，并将具有相对宽的发射角分布的光作为输出信号输出作为输出信号，如果输入信号的信号电平相对较低。如果来自输入层的输出信号的信号电平相对较高，则中间层将具有相对窄的发射角分布的光作为输出信号输出到输出层，并将具有相对宽的发射角分布的光输出到输出层，作为如果来自输入层的输出信号的信号电平相对较低，则输出信号。

7. 发明申请

US20100176278A1 OPTICAL NEURAL NETWORK 有权
标题翻译：光学神经网络
公开(公告)号：US20100176278A1
公开(公告)日：2010-07-15
申请号：US12602072
申请日：2008-05-02
申请人： Shin Yokoyama
发明人： Shin Yokoyama
IPC分类号： H01L31/147
CPC分类号： G06N3/067 , H01L27/15 , H01S5/0425 , H01S5/183 , H01S5/423 , H01S2301/18
摘要： An input layer outputs light having a relatively narrow emission angle distribution to a middle layer as an output signal if the signal level of input signal is relatively high and outputs light having a relatively broad emission angle distribution to the middle layer as the output signal if the signal level of input signal is relatively low. The middle layer outputs light having a relatively narrow emission angle distribution as an output signal to an output layer if the signal level of the output signal from input layer is relatively high and outputs light having a relatively broad emission angle distribution to the output layer as an output signal if the signal level of the output signal from the input layer is relatively low.
摘要翻译：如果输入信号的信号电平相对较高，则输入层将具有较窄发射角分布的光输出到中间层作为输出信号，并将具有相对宽的发射角分布的光作为输出信号输出作为输出信号，如果输入信号的信号电平相对较低。如果来自输入层的输出信号的信号电平相对较高，则中间层将具有相对窄的发射角分布的光作为输出信号输出到输出层，并将具有相对宽的发射角分布的光输出到输出层，作为如果来自输入层的输出信号的信号电平相对较低，则输出信号。

8. 发明授权

US07720389B2 Optical integrated circuit apparatus 有权
标题翻译：光集成电路设备
公开(公告)号：US07720389B2
公开(公告)日：2010-05-18
申请号：US12393458
申请日：2009-02-26
申请人： Shin Yokoyama
发明人： Shin Yokoyama
IPC分类号： H04B10/00
CPC分类号： H01S5/4025 , G02B6/132 , G02B6/136 , G02B6/29343 , G02F1/035 , G02F1/095 , G02F2203/15 , H01S5/026
摘要： Optical waveguides and optical transmission/reception units are placed on one principal plane of a semiconductor substrate. A light source is placed on one end surface of the semiconductor substrate and guides generated light to the optical waveguides. In the optical transmission/reception units, each of optical resonant members optically resonates with partial light of one of light beams propagating in the optical waveguides and emits the partial light into an optical transmission member if voltage is applied thereto. In the optical transmission/reception units, each of another optical resonant members optically resonates with light propagating in the optical transmission member and emits the resonated light into a photodetector unit if voltage is applied thereto.
摘要翻译：光波导和光发送/接收单元被放置在半导体衬底的一个主平面上。将光源放置在半导体衬底的一个端面上，并将产生的光引导到光波导。在光发送/接收单元中，每个光学谐振元件与在光波导中传播的光束中的一个的部分光光学谐振，并且如果施加电压则将该部分光发射到光传输部件中。在光学发送/接收单元中，如果向其发送电压，则另一个光学谐振构件与光传输构件中传播的光共振，并将共振光发射到光电检测器单元中。

9. 发明申请

US20090324239A1 OPTICAL INTEGRATED CIRCUIT APPARATUS 有权
标题翻译：光电集成电路设备
公开(公告)号：US20090324239A1
公开(公告)日：2009-12-31
申请号：US12393458
申请日：2009-02-26
申请人： Shin Yokoyama
发明人： Shin Yokoyama
IPC分类号： H04B10/00
CPC分类号： H01S5/4025 , G02B6/132 , G02B6/136 , G02B6/29343 , G02F1/035 , G02F1/095 , G02F2203/15 , H01S5/026
摘要： Optical waveguides and optical transmission/reception units are placed on one principal plane of a semiconductor substrate. A light source is placed on one end surface of the semiconductor substrate and guides generated light to the optical waveguides. In the optical transmission/reception units, each of optical resonant members optically resonates with partial light of one of light beams propagating in the optical waveguides and emits the partial light into an optical transmission member if voltage is applied thereto. In the optical transmission/reception units, each of another optical resonant members optically resonates with light propagating in the optical transmission member and emits the resonated light into a photodetector unit if voltage is applied thereto.
摘要翻译：光波导和光发送/接收单元被放置在半导体衬底的一个主平面上。将光源放置在半导体衬底的一个端面上，并将产生的光引导到光波导。在光发送/接收单元中，每个光学谐振元件与在光波导中传播的光束中的一个的部分光光学谐振，并且如果施加电压则将该部分光发射到光传输部件中。在光学发送/接收单元中，如果向其发送电压，则另一个光学谐振构件与光传输构件中传播的光共振，并将共振光发射到光电检测器单元中。

10. 发明申请

US20090304390A1 OPTICAL INTEGRATED CIRCUIT APPARATUS 有权
标题翻译：光电集成电路设备
公开(公告)号：US20090304390A1
公开(公告)日：2009-12-10
申请号：US12328341
申请日：2008-12-04
申请人： Yuichiro Tanushi , Shin Yokoyama , Masato Suzuki , Yoshiteru Amemiya
发明人： Yuichiro Tanushi , Shin Yokoyama , Masato Suzuki , Yoshiteru Amemiya
IPC分类号： H04B10/00
CPC分类号： H04B10/801
摘要： Optical waveguides and optical transceivers are formed on one main surface of a semiconductor substrate. A light source is provided on one side surface of the semiconductor substrate, and emits light to the optical waveguides. In each of the optical transceivers, when a voltage is applied to a silicon layer, an optical resonator resonates with any one of the light components traveling through the optical waveguides, and emits the light component to an optical transmission member. In addition, in each of the optical transceivers, when a voltage is applied to the silicon layer, another optical resonators resonate with light traveling through the optical transmission member and emit the resonance light to photodetectors, respectively.
摘要翻译：光波导和光收发器形成在半导体衬底的一个主表面上。光源设置在半导体衬底的一个侧表面上，并向光波导发光。在每个光收发器中，当向硅层施加电压时，光谐振器与穿过光波导的任何一个光分量谐振，并将光分量发射到光传输部件。此外，在每个光收发器中，当向硅层施加电压时，另一个光谐振器与传播通过光传输部件的光共振，并将谐振光分别发射到光电检测器。

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