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1. 发明授权

US08470693B2 Method for manufacturing quantum dot 有权
标题翻译：量子点制造方法
公开(公告)号：US08470693B2
公开(公告)日：2013-06-25
申请号：US12665242
申请日：2008-03-31
申请人： Shin Yokoyama , Yoshiteru Amemiya
发明人： Shin Yokoyama , Yoshiteru Amemiya
IPC分类号： H01L21/36 , H01L21/20 , H01L21/469
CPC分类号： H01L33/005 , B82Y10/00 , H01L21/02532 , H01L21/02535 , H01L21/0262 , H01L33/06 , H01L33/26
摘要： A silicon oxide film (2) comprising an amorphous phase is deposited on a substrate (1) (see a step (b)) by a plasma CVD method using an SiH4 gas and an N2O gas. Subsequently, a sample comprising the silicon oxide film (2)/the substrate (1) is set on an RTA apparatus. The sample (=the silicon oxide film (2)/the substrate (1)) is heat-treated (rapid heating and rapid cooling) (see a step (c)). In this case, a temperature raising rate is 200° C./s, and a temperature in heat treatment is 1000° C.
摘要翻译：通过使用SiH 4气体和N 2 O气体的等离子体CVD法将包含非晶相的氧化硅膜（2）沉积在基板（1）上（参见步骤（b））。随后，将包含氧化硅膜（2）/基板（1）的样品设置在RTA装置上。将样品（=氧化硅膜（2）/基板（1））进行热处理（快速加热和快速冷却）（参见步骤（c））。在这种情况下，升温速度为200℃/秒，热处理温度为1000℃。

2. 发明申请

US20100176370A1 LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20100176370A1
公开(公告)日：2010-07-15
申请号：US12601794
申请日：2008-03-26
申请人： Shin Yokoyama , Yoshiteru Amemiya
发明人： Shin Yokoyama , Yoshiteru Amemiya
IPC分类号： H01L33/04 , H01L21/20
CPC分类号： H01L33/26 , H01L33/06 , H01L33/08 , Y10S438/962 , Y10S977/72 , Y10S977/721 , Y10S977/774
摘要： A light-emitting device includes an n-type silicon thin film (2), a silicon thin film (3), and a p-type silicon thin film (4). The silicon thin film (3) is formed on the n-type silicon thin film (2) and the p-type silicon thin film (4) is formed on the silicon thin film (3). The n-type silicon thin film (2), the silicon thin film (3), and the p-type silicon thin film (4) form a pin junction. The n-type silicon thin film (2) includes a plurality of quantum dots (21) composed of n-type Si. The silicon thin film (3) includes a plurality of quantum dots (31) composed of p-type Si. The p-type silicon thin film (4) includes a plurality of quantum dots (41) composed of p-type Si. Electrons are injected from the n-type silicon thin film (2) side and holes are injected from the p-type silicon thin film (4) side, whereby light is emitted at a silicon nitride film (3).
摘要翻译：发光装置包括n型硅薄膜（2），硅薄膜（3）和p型硅薄膜（4）。在n型硅薄膜（2）上形成硅薄膜（3），在硅薄膜（3）上形成p型硅薄膜（4）。 n型硅薄膜（2），硅薄膜（3）和p型硅薄膜（4）形成pin结。 n型硅薄膜（2）包括由n型Si构成的多个量子点（21）。硅薄膜（3）包括由p型Si构成的多个量子点（31）。 p型硅薄膜（4）包括由p型Si构成的多个量子点（41）。从n型硅薄膜（2）侧注入电子，从p型硅薄膜（4）侧注入空穴，在氮化硅膜（3）发光。

3. 发明申请

US20120007043A1 LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20120007043A1
公开(公告)日：2012-01-12
申请号：US13237449
申请日：2011-09-20
申请人： Shin Yokoyama , Yoshiteru Amemiya
发明人： Shin Yokoyama , Yoshiteru Amemiya
IPC分类号： H01L33/04
CPC分类号： H01L33/26 , H01L33/06 , H01L33/08 , Y10S438/962 , Y10S977/72 , Y10S977/721 , Y10S977/774
摘要： A light-emitting device includes an n-type silicon thin film (2), a silicon thin film (3), and a p-type silicon thin film (4). The silicon thin film (3) is formed on the n-type silicon thin film (2) and the p-type silicon thin film (4) is formed on the silicon thin film (3). The n-type silicon thin film (2), the silicon thin film (3), and the p-type silicon thin film (4) form a pin junction. The n-type silicon thin film (2) includes a plurality of quantum dots (21) composed of n-type Si. The silicon thin film (3) includes a plurality of quantum dots (31) composed of p-type Si. The p-type silicon thin film (4) includes a plurality of quantum dots (41) composed of p-type Si. Electrons are injected from the n-type silicon thin film (2) side and holes are injected from the p-type silicon thin film (4) side, whereby light is emitted at a silicon nitride film (3).
摘要翻译：发光装置包括n型硅薄膜（2），硅薄膜（3）和p型硅薄膜（4）。在n型硅薄膜（2）上形成硅薄膜（3），在硅薄膜（3）上形成p型硅薄膜（4）。 n型硅薄膜（2），硅薄膜（3）和p型硅薄膜（4）形成pin结。 n型硅薄膜（2）包括由n型Si构成的多个量子点（21）。硅薄膜（3）包括由p型Si构成的多个量子点（31）。 p型硅薄膜（4）包括由p型Si构成的多个量子点（41）。从n型硅薄膜（2）侧注入电子，从p型硅薄膜（4）侧注入空穴，在氮化硅膜（3）发光。

4. 发明申请

US20100304553A1 METHOD FOR MANUFACTURING QUANTUM DOT 有权
标题翻译：制造量子的方法
公开(公告)号：US20100304553A1
公开(公告)日：2010-12-02
申请号：US12665242
申请日：2008-03-31
申请人： Shin Yokoyama , Yoshiteru Amemiya
发明人： Shin Yokoyama , Yoshiteru Amemiya
IPC分类号： H01L21/20
CPC分类号： H01L33/005 , B82Y10/00 , H01L21/02532 , H01L21/02535 , H01L21/0262 , H01L33/06 , H01L33/26
摘要： A silicon oxide film (2) comprising an amorphous phase is deposited on a substrate (1) (see a step (b)) by a plasma CVD method using an SiH4 gas and an N2O gas. Subsequently, a sample comprising the silicon oxide film (2)/the substrate (1) is set on an RTA apparatus. The sample (=the silicon oxide film (2)/the substrate (1)) is heat-treated (rapid heating and rapid cooling) (see a step (c)). In this case, a temperature raising rate is 200° C./s, and a temperature in heat treatment is 1000° C.
摘要翻译：通过使用SiH 4气体和N 2 O气体的等离子体CVD法将包含非晶相的氧化硅膜（2）沉积在基板（1）上（参见步骤（b））。随后，将包含氧化硅膜（2）/基板（1）的样品设置在RTA装置上。将样品（=氧化硅膜（2）/基板（1））进行热处理（快速加热和快速冷却）（参见步骤（c））。在这种情况下，升温速度为200℃/秒，热处理温度为1000℃。

5. 发明授权

US08330141B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08330141B2
公开(公告)日：2012-12-11
申请号：US13237449
申请日：2011-09-20
申请人： Shin Yokoyama , Yoshiteru Amemiya
发明人： Shin Yokoyama , Yoshiteru Amemiya
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L33/26 , H01L33/06 , H01L33/08 , Y10S438/962 , Y10S977/72 , Y10S977/721 , Y10S977/774
摘要： A light-emitting device includes an n-type silicon thin film (2), a silicon thin film (3), and a p-type silicon thin film (4). The silicon thin film (3) is formed on the n-type silicon thin film (2) and the p-type silicon thin film (4) is formed on the silicon thin film (3). The n-type silicon thin film (2), the silicon thin film (3), and the p-type silicon thin film (4) form a pin junction. The n-type silicon thin film (2) includes a plurality of quantum dots (21) composed of n-type Si. The silicon thin film (3) includes a plurality of quantum dots (31) composed of p-type Si. The p-type silicon thin film (4) includes a plurality of quantum dots (41) composed of p-type Si. Electrons are injected from the n-type silicon thin film (2) side and holes are injected from the p-type silicon thin film (4) side, whereby light is emitted at a silicon nitride film (3).
摘要翻译：发光装置包括n型硅薄膜（2），硅薄膜（3）和p型硅薄膜（4）。在n型硅薄膜（2）上形成硅薄膜（3），在硅薄膜（3）上形成p型硅薄膜（4）。 n型硅薄膜（2），硅薄膜（3）和p型硅薄膜（4）形成pin结。 n型硅薄膜（2）包括由n型Si构成的多个量子点（21）。硅薄膜（3）包括由p型Si构成的多个量子点（31）。 p型硅薄膜（4）包括由p型Si构成的多个量子点（41）。从n型硅薄膜（2）侧注入电子，从p型硅薄膜（4）侧注入空穴，由此在氮化硅膜（3）发光。

6. 发明授权

US08044382B2 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US08044382B2
公开(公告)日：2011-10-25
申请号：US12601794
申请日：2008-03-26
申请人： Shin Yokoyama , Yoshiteru Amemiya
发明人： Shin Yokoyama , Yoshiteru Amemiya
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L21/331 , H01L21/00
CPC分类号： H01L33/26 , H01L33/06 , H01L33/08 , Y10S438/962 , Y10S977/72 , Y10S977/721 , Y10S977/774
摘要： A light-emitting device includes an n-type silicon thin film (2), a silicon thin film (3), and a p-type silicon thin film (4). The silicon thin film (3) is formed on the n-type silicon thin film (2) and the p-type silicon thin film (4) is formed on the silicon thin film (3). The n-type silicon thin film (2), the silicon thin film (3), and the p-type silicon thin film (4) form a pin junction. The n-type silicon thin film (2) includes a plurality of quantum dots (21) composed of n-type Si. The silicon thin film (3) includes a plurality of quantum dots (31) composed of p-type Si. The p-type silicon thin film (4) includes a plurality of quantum dots (41) composed of p-type Si. Electrons are injected from the n-type silicon thin film (2) side and holes are injected from the p-type silicon thin film (4) side, whereby light is emitted at a silicon nitride film (3).
摘要翻译：发光装置包括n型硅薄膜（2），硅薄膜（3）和p型硅薄膜（4）。在n型硅薄膜（2）上形成硅薄膜（3），在硅薄膜（3）上形成p型硅薄膜（4）。 n型硅薄膜（2），硅薄膜（3）和p型硅薄膜（4）形成pin结。 n型硅薄膜（2）包括由n型Si构成的多个量子点（21）。硅薄膜（3）包括由p型Si构成的多个量子点（31）。 p型硅薄膜（4）包括由p型Si构成的多个量子点（41）。从n型硅薄膜（2）侧注入电子，从p型硅薄膜（4）侧注入空穴，在氮化硅膜（3）发光。

7. 发明授权

US07907847B2 Optical integrated circuit apparatus 有权
标题翻译：光集成电路设备
公开(公告)号：US07907847B2
公开(公告)日：2011-03-15
申请号：US12328341
申请日：2008-12-04
申请人： Yuichiro Tanushi , Shin Yokoyama , Masato Suzuki , Yoshiteru Amemiya
发明人： Yuichiro Tanushi , Shin Yokoyama , Masato Suzuki , Yoshiteru Amemiya
IPC分类号： H04B10/00
CPC分类号： H04B10/801
摘要： Optical waveguides and optical transceivers are formed on one main surface of a semiconductor substrate. A light source is provided on one side surface of the semiconductor substrate, and emits light to the optical waveguides. In each of the optical transceivers, when a voltage is applied to a silicon layer, an optical resonator resonates with any one of the light components traveling through the optical waveguides, and emits the light component to an optical transmission member. In addition, in each of the optical transceivers, when a voltage is applied to the silicon layer, another optical resonators resonate with light traveling through the optical transmission member and emit the resonance light to photodetectors, respectively.
摘要翻译：光波导和光收发器形成在半导体衬底的一个主表面上。光源设置在半导体衬底的一个侧表面上，并向光波导发光。在每个光收发器中，当向硅层施加电压时，光谐振器与穿过光波导的任何一个光分量谐振，并将光分量发射到光传输部件。此外，在每个光收发器中，当向硅层施加电压时，另一个光谐振器与传播通过光传输部件的光共振，并将谐振光分别发射到光电检测器。

8. 发明申请

US20090304390A1 OPTICAL INTEGRATED CIRCUIT APPARATUS 有权
标题翻译：光电集成电路设备
公开(公告)号：US20090304390A1
公开(公告)日：2009-12-10
申请号：US12328341
申请日：2008-12-04
申请人： Yuichiro Tanushi , Shin Yokoyama , Masato Suzuki , Yoshiteru Amemiya
发明人： Yuichiro Tanushi , Shin Yokoyama , Masato Suzuki , Yoshiteru Amemiya
IPC分类号： H04B10/00
CPC分类号： H04B10/801
摘要： Optical waveguides and optical transceivers are formed on one main surface of a semiconductor substrate. A light source is provided on one side surface of the semiconductor substrate, and emits light to the optical waveguides. In each of the optical transceivers, when a voltage is applied to a silicon layer, an optical resonator resonates with any one of the light components traveling through the optical waveguides, and emits the light component to an optical transmission member. In addition, in each of the optical transceivers, when a voltage is applied to the silicon layer, another optical resonators resonate with light traveling through the optical transmission member and emit the resonance light to photodetectors, respectively.
摘要翻译：光波导和光收发器形成在半导体衬底的一个主表面上。光源设置在半导体衬底的一个侧表面上，并向光波导发光。在每个光收发器中，当向硅层施加电压时，光谐振器与穿过光波导的任何一个光分量谐振，并将光分量发射到光传输部件。此外，在每个光收发器中，当向硅层施加电压时，另一个光谐振器与传播通过光传输部件的光共振，并将谐振光分别发射到光电检测器。

9. 发明授权

US08980658B2 Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：US08980658B2
公开(公告)日：2015-03-17
申请号：US13755846
申请日：2013-01-31
申请人： Shin Yokoyama
发明人： Shin Yokoyama
IPC分类号： H01L21/00
CPC分类号： H01L33/06 , B82Y10/00 , H01L29/127 , H01L33/26
摘要： A light-emitting element includes a n-type silicon oxide film and a p-type silicon nitride film. The n-type silicon oxide film and the p-type silicon nitride film formed on the n-type silicon oxide film form a p-n junction. The n-type silicon oxide film includes a plurality of quantum dots composed of n-type Si while the p-type silicon nitride film includes a plurality of quantum dots composed of p-type Si. Light emission occurs from the boundary between the n-type silicon oxide film and the p-type silicon nitride film by injecting electrons from the n-type silicon oxide film side and holes from the p-type silicon nitride film side.
摘要翻译：发光元件包括n型氧化硅膜和p型氮化硅膜。在n型氧化硅膜上形成的n型氧化硅膜和p型氮化硅膜形成p-n结。 n型氧化硅膜由n型Si构成的多个量子点构成，p型氮化硅膜由p型Si构成的多个量子点构成。通过从n型氧化硅膜侧注入电子和从p型氮化硅膜侧的空穴，发生从n型氧化硅膜和p型氮化硅膜之间的边界发光。

10. 发明申请

US20050150516A1 Semiconductor manufacturing method and apparatus 审中-公开
标题翻译：半导体制造方法和装置
公开(公告)号：US20050150516A1
公开(公告)日：2005-07-14
申请号：US10486207
申请日：2002-05-14
申请人： Toshiaki Fujii , Shin Yokoyama
发明人： Toshiaki Fujii , Shin Yokoyama
IPC分类号： H01L21/311 , H01L21/316 , C25F1/00 , C25F3/30
CPC分类号： H01L21/02238 , H01L21/31138 , H01L21/31658
摘要： The present invention aims to provide processes and equipments for manufacturing semiconductors, according to which oxidation of wafer surfaces can be controlled by simple means and contaminants promoting oxidation and contaminants inviting a decreased yield of wafers can also be totally controlled. To achieve the object above, the present invention provides a process for manufacturing a semiconductor, characterized in that a substrate is treated while exposing the surface of the substrate with a negative ion-enriched gas; and an equipment for manufacturing a semiconductor comprising a gas channel through which a gas to be treated is passed; a negative ion-enriched gas generator consisting of a gas cleaner located at an upstream part of said gas channel and a negative ion generator located at a downstream part thereof: and means for supplying the resulting negative ion-enriched gas to the surface of each substrate.
摘要翻译：本发明的目的在于提供制造半导体的工艺和设备，根据该工艺和设备可以通过简单的手段控制晶片表面的氧化，并且可以完全控制促进氧化的污染物和引起晶片产量降低的污染物。为了实现上述目的，本发明提供一种制造半导体的方法，其特征在于，在用负离子富集气体暴露基板的表面的同时对基板进行处理; 以及用于制造半导体的设备，包括通过待处理气体的气体通道; 由位于所述气体通道的上游部分的气体清洁器和位于其下游部分的负离子发生器组成的负离子富集气体发生器和用于将所得负离子富集气体供应到每个基板的表面的装置。

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