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1. 发明申请

US20190221710A1 SEMICONDUCTOR MODIFICATION PROCESS FOR CONDUCTIVE AND MODIFIED ELECTRICAL REGIONS AND RELATED STRUCTURES 审中-公开
公开(公告)号：US20190221710A1
公开(公告)日：2019-07-18
申请号：US16241431
申请日：2019-01-07
申请人： Facebook Technologies, LLC
发明人： James Ronald Bonar , Gareth John Valentine , Stephen Warren Gorton , Zheng Gong , James Small
IPC分类号： H01L33/14 , H01S5/187 , H01L33/00 , H01L33/10 , H01L33/58 , H01S5/183 , H01S5/00 , H01S5/20 , H01S3/00 , H01S5/343 , H01S5/042
CPC分类号： H01L33/145 , H01L33/0075 , H01L33/0095 , H01L33/105 , H01L33/58 , H01S3/005 , H01S5/00 , H01S5/021 , H01S5/0422 , H01S5/0425 , H01S5/183 , H01S5/18308 , H01S5/18341 , H01S5/187 , H01S5/2068 , H01S5/2086 , H01S5/34333
摘要： There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaN and modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads.

2. 发明申请

US20180034243A1 MONOLITHIC DIODE LASER ARRANGEMENT AND METHOD FOR PRODUCING THE MONOLITHIC DIODE LASER 审中-公开
公开(公告)号：US20180034243A1
公开(公告)日：2018-02-01
申请号：US15728922
申请日：2017-10-10
申请人： DILAS DIODENLASER GMBH
发明人： MARC KELEMEN , SASCHA HILZENSAUER , JUERGEN GILLY , PATRICK FRIEDMANN , JENS BIESENBACH
IPC分类号： H01S5/40 , H01S5/20 , H01S5/028 , H01S5/026 , H01S5/042 , H01S5/02
CPC分类号： H01S5/4018 , H01L2224/24 , H01L2224/24137 , H01L2224/32225 , H01L2224/73267 , H01L2224/82 , H01L2224/92244 , H01S5/0216 , H01S5/02276 , H01S5/026 , H01S5/028 , H01S5/0422 , H01S5/0425 , H01S5/2086 , H01S5/4031 , H01S2301/176
摘要： A monolithic diode laser arrangement contains a plurality of individual emitters which are arranged adjacent to one another on a common supporting substrate and which in each case have contact windows for electrical contact which are arranged on the respective individual emitters on a front face opposite the supporting substrate. A method for producing such a diode laser arrangement and a laser device having such a diode laser arrangement are further described.

3. 发明申请

US20170324217A1 METHOD FOR PRODUCING A RESONANT STRUCTURE OF A DISTRIBUTED-FEEDBACK SEMICONDUCTOR LASER 审中-公开
公开(公告)号：US20170324217A1
公开(公告)日：2017-11-09
申请号：US15513376
申请日：2015-09-25
申请人： THALES
发明人： Mathieu CARRAS , Grégory MAISONS , Bouzid SIMOZRAG
IPC分类号： H01S5/12 , H01S5/20 , H01S5/042 , H01S5/026 , G02B6/122 , H01S5/227 , G02B5/18
CPC分类号： H01S5/1231 , G02B5/1866 , G02B6/122 , H01S5/0425 , H01S5/2086 , H01S5/2202 , H01S5/2214 , H01S5/2216 , H01S5/2275 , H01S5/2277 , H01S5/3013 , H01S5/3402 , H01S2301/176
摘要： A reproducible method for producing a resonant structure of a distributed-feedback semiconductor laser exhibiting a narrow waveguide of the order of some ten micrometers, the production of the diffraction grating being carried out subsequent to the step of producing the strip is provided. In a last step, a diffraction grating is engraved as a function of a desired precise wavelength.

4. 发明申请

US20170222400A1 OPTOELECTRONIC INTEGRATED CIRCUIT 审中-公开
公开(公告)号：US20170222400A1
公开(公告)日：2017-08-03
申请号：US15450400
申请日：2017-03-06
申请人： THE UNIVERSITY OF CONNECTICUT , Opel Solar, Inc.
发明人： Geoff W. TAYLOR
IPC分类号： H01S5/10 , G02B6/134 , G02B6/13 , H01S5/042 , H01S5/062 , H01L31/18 , H01S5/30 , H01L31/0352 , H01L31/0304 , H01L31/112 , H01L31/11 , H01L31/0232 , G02B6/293 , H01S5/20
CPC分类号： H01S5/1071 , G02B6/131 , G02B6/1347 , G02B6/29338 , H01L21/8252 , H01L27/0605 , H01L27/085 , H01L27/1443 , H01L29/083 , H01L29/1066 , H01L29/15 , H01L29/36 , H01L29/66401 , H01L29/74 , H01L29/7783 , H01L31/02327 , H01L31/03046 , H01L31/035209 , H01L31/035236 , H01L31/1105 , H01L31/1113 , H01L31/1129 , H01L31/1844 , H01L33/06 , H01L33/105 , H01S5/0228 , H01S5/0421 , H01S5/0424 , H01S5/0425 , H01S5/06203 , H01S5/06226 , H01S5/0625 , H01S5/1028 , H01S5/1032 , H01S5/1042 , H01S5/1075 , H01S5/125 , H01S5/183 , H01S5/187 , H01S5/2027 , H01S5/2063 , H01S5/2086 , H01S5/222 , H01S5/3054 , H01S5/309 , H01S5/34313
摘要： A semiconductor device includes an n-type ohmic contact layer, cathode and anode electrodes, p-type and n-type modulation doped quantum well (QW) structures, and first and second ion implant regions. The anode electrode is formed on the first ion implant region that contacts the p-type modulation doped QW structure and the cathode electrode is formed by patterning the first and second ion implant regions and the n-type ohmic contact layer. The semiconductor device is configured to operate as at least one of a diode laser and a diode detector. As the diode laser, the semiconductor device emits photons. As the diode detector, the semiconductor device receives an input optical light and generates a photocurrent.

5. 发明申请

US20170040771A1 SURFACE EMITTING LASER ELEMENT AND ATOMIC OSCILLATOR 审中-公开
标题翻译：表面发射激光元件和原子振荡器
公开(公告)号：US20170040771A1
公开(公告)日：2017-02-09
申请号：US15216834
申请日：2016-07-22
申请人： Ryoichiro SUZUKI
发明人： Ryoichiro SUZUKI
IPC分类号： H01S5/068 , H03L7/26 , H01S5/343 , H01S5/187 , H01S5/183
CPC分类号： H01S5/068 , H01S5/0042 , H01S5/183 , H01S5/18313 , H01S5/18358 , H01S5/18361 , H01S5/18377 , H01S5/187 , H01S5/2086 , H01S5/34313 , H01S5/34386 , H01S2301/163 , H01S2301/176 , H03L7/26
摘要： A surface emitting laser element includes a lower Bragg reflection mirror; an upper Bragg reflection mirror; and a resonator region formed between the lower Bragg reflection mirror and the upper Bragg reflection mirror, and including an active layer. A wavelength adjustment region is formed in the lower Bragg reflection mirror or the upper Bragg reflection mirror, and includes a second phase adjustment layer, a wavelength adjustment layer and a first phase adjustment layer, arranged in this order from a side where the resonator region is formed. An optical thickness of the wavelength adjustment region is approximately (2N+1)×λ/4, and the wavelength adjustment layer is formed at a position where an optical distance from an end of the wavelength adjustment region on the side of the resonator region is approximately M×λ/2, where λ is a wavelength of emitted light, M and N are positive integers, and M is N or less.
摘要翻译：表面发射激光元件包括下布拉格反射镜; 上布拉格反射镜; 以及形成在下布拉格反射镜和上布拉格反射镜之间并且包括有源层的谐振器区域。波长调整区域形成在下布拉格反射镜或上布拉格反射镜中，并且包括第二相位调整层，波长调整层和第一相位调整层，其从谐振器区域为形成。波长调整区域的光学厚度大致为（2N + 1）×λ/ 4，波长调整层形成在从谐振器区域侧的波长调整区域的端部的光学距离为大约M×λ/ 2，其中λ是发射光的波长，M和N是正整数，M是N或更小。

6. 发明申请

US20160049770A1 SINGLE-MODE, DISTRIBUTED FEEDBACK INTERBAND CASCADE LASERS 有权
标题翻译：单模，分布式反馈INTERBAND CASCADE激光
公开(公告)号：US20160049770A1
公开(公告)日：2016-02-18
申请号：US14824933
申请日：2015-08-12
申请人： California Institute of Technology
发明人： Clifford F. Frez , Carl E. Borgentun , Ryan M. Briggs , Mahmood Bagheri , Siamak Forouhar
IPC分类号： H01S5/34 , H01S5/10 , H01S5/042 , H01S5/12 , H01S5/22
CPC分类号： H01S5/3402 , H01S5/0425 , H01S5/1003 , H01S5/1231 , H01S5/1237 , H01S5/125 , H01S5/187 , H01S5/2086 , H01S5/22 , H01S5/2205 , H01S5/3214 , H01S5/3401
摘要： Single-mode, distributed feedback interband cascade lasers (ICLs) using distributed-feedback gratings (e.g., lateral Bragg gratings) and methods of fabricating such ICLs are provided. The ICLs incorporate distributed-feedback gratings that are formed above the laser active region and adjacent the ridge waveguide (RWG) of the ICL. The ICLs may incorporate a double-ridge system comprising an optical confinement structure (e.g., a RWG) disposed above the laser active region that comprises the first ridge of the double ridge system, a DFB grating (e.g., lateral Bragg grating) disposed above the laser active region and adjacent the optical confinement structure, and an electric confinement structure that passes at least partially through the laser active region and that defines the boundary of the second ridge comprises and the termination of the DFB grating.
摘要翻译：提供了使用分布式反馈光栅（例如横向布拉格光栅）的单模，分布式反馈带间级联激光器（ICL）和制造这种ICL的方法。 ICL包含形成在激光有源区域上方并与ICL的脊波导（RWG）相邻的分布式反馈光栅。 ICL可以包括双脊系统，该双脊系统包括设置在激光有源区域之上的光限制结构（例如，RWG），其包括双脊系统的第一脊，DFB光栅（例如，横向布拉格光栅）激光有源区并且邻近光限制结构，并且至少部分地穿过激光有源区并且限定第二脊的边界的电限制结构包括DFB光栅的终止和终止。

7. 发明授权

US09231361B2 Tunable laser with high thermal wavelength tuning efficiency 有权
标题翻译：具有高波长调谐效率的可调谐激光器
公开(公告)号：US09231361B2
公开(公告)日：2016-01-05
申请号：US14266248
申请日：2014-04-30
申请人： Futurewei Technologies, Inc.
发明人： Hongmin Chen , Xuejin Yan , Rongsheng Miao , Xiao Shen , Zongrong Liu
IPC分类号： H01L21/00 , H01S3/042 , H01L21/311 , H01S5/026 , H01S5/042 , H01S5/06 , H01S5/0625 , H01S5/125 , H01S5/50 , G02B6/12
CPC分类号： H01S5/0612 , G02B2006/12176 , H01L21/311 , H01S3/042 , H01S5/02453 , H01S5/02461 , H01S5/0261 , H01S5/0425 , H01S5/06256 , H01S5/125 , H01S5/2086 , H01S5/209 , H01S5/2275 , H01S5/5045
摘要： A monolithically integrated thermal tunable laser comprising a layered substrate comprising an upper surface and a lower surface, and a thermal tuning assembly comprising a heating element positioned on the upper surface, a waveguide layer positioned between the upper surface and the lower surface, and a thermal insulation layer positioned between the waveguide layer and the lower surface, wherein the thermal insulation layer is at least partially etched out of an Indium Phosphide (InP) sacrificial layer, and wherein the thermal insulation layer is positioned between Indium Gallium Arsenide (InGaAs) etch stop layers.
摘要翻译：一种单片集成的热可调激光器，包括包括上表面和下表面的分层衬底，以及包括位于上表面上的加热元件的热调节组件，位于上表面和下表面之间的波导层，以及热绝缘层位于所述波导层和所述下表面之间，其中所述绝热层至少部分地从磷化铟（InP）牺牲层蚀刻出去，并且其中所述绝热层位于砷化镓（InGaAs）蚀刻停止点之间层。

8. 发明授权

US09025633B2 Optical device, method of manufacturing the same, and laser module 有权
标题翻译：光学装置及其制造方法以及激光模块
公开(公告)号：US09025633B2
公开(公告)日：2015-05-05
申请号：US13963620
申请日：2013-08-09
申请人： Furukawa Electric Co., Ltd.
发明人： Kouhei Kinugawa , Hidehiro Taniguchi
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/042 , B82Y20/00 , H01S5/022 , H01S5/024 , H01S5/028 , H01S5/16 , H01S5/343 , H01S5/02
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/0202 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/02476 , H01S5/028 , H01S5/0425 , H01S5/16 , H01S5/2086 , H01S5/22 , H01S5/222 , H01S5/34313 , H01S2301/176
摘要： An optical device includes a ridge semiconductor laser element formed on a substrate, a first insulating film coating a lateral wall portion of a ridge structure of the ridge semiconductor laser element, and a second insulating film coating the ridge structure from above the first insulating film in an end portion region of the ridge structure. The second insulating film has a density lower than a density of the first insulating film.
摘要翻译：光学装置包括形成在基板上的脊状半导体激光元件，涂覆脊状半导体激光元件的脊部结构的侧壁部的第一绝缘膜，以及从第一绝缘膜的上方涂覆脊状结构的第二绝缘膜脊结构的端部区域。第二绝缘膜的密度低于第一绝缘膜的密度。

9. 发明申请

US20140321488A1 Tunable Laser With High Thermal Wavelength Tuning Efficiency 有权
标题翻译：可调谐激光器具有高热波长调谐效率
公开(公告)号：US20140321488A1
公开(公告)日：2014-10-30
申请号：US14266248
申请日：2014-04-30
申请人： Futurewei Technologies, Inc.
发明人： Hongmin Chen , Xuejin Yan , Rongshen Miao , Xiao Shen , Zongrong Liu
IPC分类号： H01S3/042 , H01L21/311
CPC分类号： H01S5/0612 , G02B2006/12176 , H01L21/311 , H01S3/042 , H01S5/02453 , H01S5/02461 , H01S5/0261 , H01S5/0425 , H01S5/06256 , H01S5/125 , H01S5/2086 , H01S5/209 , H01S5/2275 , H01S5/5045
摘要： A monolithically integrated thermal tunable laser comprising a layered substrate comprising an upper surface and a lower surface, and a thermal tuning assembly comprising a heating element positioned on the upper surface, a waveguide layer positioned between the upper surface and the lower surface, and a thermal insulation layer positioned between the waveguide layer and the lower surface, wherein the thermal insulation layer is at least partially etched out of an Indium Phosphide (InP) sacrificial layer, and wherein the thermal insulation layer is positioned between Indium Gallium Arsenide (InGaAs) etch stop layers.
摘要翻译：一种单片集成的热可调激光器，包括包括上表面和下表面的分层衬底，以及包括位于上表面上的加热元件的热调节组件，位于上表面和下表面之间的波导层，以及热绝缘层位于所述波导层和所述下表面之间，其中所述绝热层至少部分地从磷化铟（InP）牺牲层蚀刻出去，并且其中所述绝热层位于砷化镓（InGaAs）蚀刻停止点之间层。

10. 发明授权

US08652862B2 Method for etching insulating film and method for manufacturing semiconductor optical device 有权
标题翻译：绝缘膜的蚀刻方法及半导体光学元件的制造方法
公开(公告)号：US08652862B2
公开(公告)日：2014-02-18
申请号：US13223586
申请日：2011-09-01
申请人： Yukihiro Tsuji
发明人： Yukihiro Tsuji
IPC分类号： H01L21/00
CPC分类号： H01S5/12 , H01S5/2086 , H01S5/2222 , H01S5/2275
摘要： A method for etching an insulating film includes the steps of forming an insulating film; forming a first resin layer composed of a non-silicon-containing resin on the insulating film; forming a pattern including projections and recesses in the first resin layer; forming a second resin layer composed of a silicon-containing resin to cover the projections and the recesses of the pattern in the first resin layer; etching the second resin layer by reactive ion etching with etching gas containing CF4 gas and oxygen gas until the projections of the first resin layer are exposed, a Si component of the second resin layer being oxidized in etching the second resin layer; selectively etching the first resin layer until the insulating film is exposed using as a mask the second resin layer buried in the recesses of the first resin layer to form a resin layer mask; and etching the insulating film using the resin layer mask. Further, in the step of etching the second resin layer, the reactive ion etching is performed under applying a self-bias voltage so that a Si product is removed, the Si product being provided from the Si component remaining in the second resin layer without being oxidized.
摘要翻译：蚀刻绝缘膜的方法包括形成绝缘膜的步骤; 在绝缘膜上形成由非含硅树脂构成的第一树脂层; 在第一树脂层中形成包括凸起和凹陷的图案; 形成由含硅树脂构成的第二树脂层，以覆盖第一树脂层中的图案的突起和凹部; 用包含CF 4气体和氧气的蚀刻气体进行反应离子蚀刻来蚀刻第二树脂层，直到第一树脂层的突起露出，第二树脂层的Si成分在蚀刻第二树脂层时被氧化; 选择性地蚀刻第一树脂层直到绝缘膜作为掩模曝露在第一树脂层的凹陷中的第二树脂层以形成树脂层掩模; 并使用树脂层掩模蚀刻绝缘膜。此外，在蚀刻第二树脂层的步骤中，在施加自偏压下进行反应离子蚀刻，从而除去Si产物，Si产物由残留在第二树脂层中的Si成分提供而不是氧化

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