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1. 发明申请

US20130016591A1 THERMALLY-ASSISTED MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDING/REPRODUCING DEVICE USING THE SAME 有权
标题翻译：使用其的热辅助磁记录介质和磁记录/再现装置
公开(公告)号：US20130016591A1
公开(公告)日：2013-01-17
申请号：US13182623
申请日：2011-07-14
申请人： Satoshi TOMIKAWA , Tomohito MIZUNO
发明人： Satoshi TOMIKAWA , Tomohito MIZUNO
IPC分类号： G11B5/738 , G11B13/04
CPC分类号： G11B5/7325 , G11B5/314 , G11B2005/0021
摘要： A thermally-assisted magnetic recording (TAMR) medium of the present invention includes: a magnetization direction arrangement layer on a substrate; and a magnetic recording layer on the magnetization direction arrangement layer, wherein the magnetization direction arrangement layer is made of at least one selected from a group consisting of Co, Zr, CoZr, CoTaZr, CoFeTaZrCr, CoNbZr, CoNiZr, FeCoZrBCu, NiFe, FeCo, FeAlN, (FeCo)N, FeAlSi, and FeTaC so that a spreading of the heating spot applied from the magnetic head for thermally-assisted recording to the film surface of the magnetic recording medium is suppressed, and that an SN is improved by arranging the magnetization direction of the perpendicularly written recording magnetization to become identical to a perpendicular direction, and realizing the higher recording density.
摘要翻译：本发明的热辅助磁记录（TAMR）介质包括：基板上的磁化方向排列层; 和磁记录层，磁化方向布置层由选自Co，Zr，CoZr，CoTaZr，CoFeTaZrCr，CoNbZr，CoNiZr，FeCoZrBCu，NiFe，FeCo， FeAlN，（FeCo）N，FeAlSi和FeTaC，从而抑制从用于热辅助记录的磁头施加的加热点到磁记录介质的膜表面的扩散，并且通过将垂直写入的记录磁化的磁化方向变得与垂直方向相同，并且实现更高的记录密度。

2. 发明授权

US08149547B2 Magnetoresistive effect element and thin-film magnetic head with the magnetoresistive effect element 有权
标题翻译：磁阻效应元件和具有磁阻效应元件的薄膜磁头
公开(公告)号：US08149547B2
公开(公告)日：2012-04-03
申请号：US12047722
申请日：2008-03-13
申请人： Naoki Ohta , Satoshi Miura , Tomohito Mizuno
发明人： Naoki Ohta , Satoshi Miura , Tomohito Mizuno
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3929 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F10/3286
摘要： An MR element includes a pinned layer, a free layer and a nonmagnetic space layer or a tunnel barrier layer sandwiched between the pinned layer and the free layer. A magnetization direction of the free layer is substantially perpendicular to a film surface thereof, and a magnetization direction of the pinned layer is substantially parallel to a film surface thereof.
摘要翻译： MR元件包括被钉扎层，自由层和非磁性空间层或夹在被钉扎层和自由层之间的隧道势垒层。自由层的磁化方向基本上垂直于其膜表面，并且被钉扎层的磁化方向基本上平行于其膜表面。

3. 发明授权

US08094420B2 Magnetoresistive device of the CCP (current perpendicular to plane) type with single-domain control of magnetization, and associated magnetic disk system 有权
标题翻译： CCP的磁阻器件（电流垂直于平面）型，具有单域控制磁化，以及相关的磁盘系统
公开(公告)号：US08094420B2
公开(公告)日：2012-01-10
申请号：US12126567
申请日：2008-05-23
申请人： Toshiyuki Ayukawa , Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Koji Shimazawa , Shinji Hara , Tomohito Mizuno , Yoshihiro Tsuchiya
发明人： Toshiyuki Ayukawa , Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Koji Shimazawa , Shinji Hara , Tomohito Mizuno , Yoshihiro Tsuchiya
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932
摘要： The invention provides a magnetoresistive device of the CCP (current perpendicular to plane) structure comprising a magnetoresistive unit sandwiched between soft magnetic shield layers with a current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer sandwiched between ferromagnetic layers. A planar framework positions the soft magnetic shield layers and comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer constructed by repeating the stacking of a multilayer unit comprising a nonmagnetic underlay layer and a high coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently directed along a closed magnetic path around the framework to form a single domain of magnetization.
摘要翻译：本发明提供了一种CCP（电流垂直于平面）结构的磁阻器件，其包括夹在软磁屏蔽层之间的磁阻单元，其中沿着层叠方向施加电流。磁阻单元包括夹在铁磁层之间的非磁性中间层。平面框架定位软磁屏蔽层，并且包括非磁性间隙层与通过重复堆叠包括非磁性底层和高矫顽材料层的多层单元构成的偏置磁场施加层的组合。非磁性间隙层被设计和定位成使得从偏置磁场施加层给出的磁通量有效地沿着围绕框架的闭合磁路引导以形成单个磁化域。

4. 发明授权

US08085512B2 CPP-type magnetoresistance effect element having a pair of free layers 有权
标题翻译： CPP型磁阻效应元件具有一对自由层
公开(公告)号：US08085512B2
公开(公告)日：2011-12-27
申请号：US12045927
申请日：2008-03-11
申请人： Tomohito Mizuno , Yoshihiro Tsuchiya , Shinji Hara , Koji Shimazawa , Tsutomu Chou
发明人： Tomohito Mizuno , Yoshihiro Tsuchiya , Shinji Hara , Koji Shimazawa , Tsutomu Chou
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11B2005/3996
摘要： A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions depend upon an external magnetic field, the second magnetic layer being positioned between the first magnetic layer and the third magnetic layer, a first non-magnetic intermediate layer sandwiched between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer sandwiched between the second magnetic layer and the third magnetic layer, wherein the stack is adapted such that sense current flows in a direction that is perpendicular to a film surface thereof; and a bias magnetic layer which is provided on a side of the stack, the side being opposite to an air bearing surface of the stack.
摘要翻译：磁场检测元件包括：堆叠，其包括其磁化方向取决于外部磁场的第一，第二和第三磁性层，第二磁性层位于第一磁性层和第三磁性层之间，第一非磁性层夹在第一磁性层和第二磁性层之间的中间层和夹在第二磁性层和第三磁性层之间的第二非磁性中间层，其中该堆叠适于使得感测电流沿垂直的方向流动到其膜表面; 以及偏置磁性层，其设置在所述堆叠的一侧，所述侧面与所述堆叠的空气支承表面相对。

5. 发明授权

US08077436B2 CPP-type magnetoresistance effect element having three magnetic layers 有权
标题翻译：具有三个磁性层的CPP型磁阻效应元件
公开(公告)号：US08077436B2
公开(公告)日：2011-12-13
申请号：US12052633
申请日：2008-03-20
申请人： Kei Hirata , Satoshi Miura , Tomohito Mizuno , Takeo Kagami
发明人： Kei Hirata , Satoshi Miura , Tomohito Mizuno , Takeo Kagami
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01L43/08
摘要： A magnetoresistance effect element comprises: a magnetoresistive stack including: first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, said second magnetic layer being located between said first magnetic layer and the third magnetic layer; a first non-magnetic intermediate layer sandwiched between said first and second magnetic layers; and a second non-magnetic intermediate layer sandwiched between said second and third magnetic layers; wherein sense current is adapted to flow in a direction perpendicular to a film plane; a bias magnetic layer provided on an opposite side of said magnetoresistive stack from an air bearing surface.
摘要翻译：磁阻效应元件包括：磁阻堆叠，其包括：其磁化方向根据外部磁场而变化的第一，第二和第三磁性层，所述第二磁性层位于所述第一磁性层和所述第三磁性层之间; 夹在所述第一和第二磁性层之间的第一非磁性中间层; 以及夹在所述第二和第三磁性层之间的第二非磁性中间层; 其中感测电流适于在垂直于膜平面的方向上流动; 偏置磁性层，设置在所述磁阻堆叠的与空气轴承表面相反的一侧上。

6. 发明授权

US07929257B2 Magnetic thin film having spacer layer that contains CuZn 有权
标题翻译：具有包含CuZn的间隔层的磁性薄膜
公开(公告)号：US07929257B2
公开(公告)日：2011-04-19
申请号：US11678506
申请日：2007-02-23
申请人： Takahiko Machita , Tomohito Mizuno , Yoshihiro Tsuchiya , Daisuke Miyauchi , Shinji Hara
发明人： Takahiko Machita , Tomohito Mizuno , Yoshihiro Tsuchiya , Daisuke Miyauchi , Shinji Hara
IPC分类号： G11B5/39 , H04R31/00
CPC分类号： G11B5/398 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/307 , Y10T29/4903 , Y10T29/49043
摘要： A magnetic thin film has a pinned layer whose magnetization direction is fixed with respect to an external magnetic field, a free layer whose magnetization direction is changed according to the external magnetic field, and a spacer layer which is sandwiched between said pinned layer and said free layer. Sense current is configured to flow in a direction that is perpendicular to film surfaces of said pinned layer, said spacer layer, and said free layer. Said spacer layer has a CuZn metal alloy which includes an oxide region, said oxide region consisting of an oxide of any of Al, Si, Cr, Ti, Hf, Zr, Zn, and Mg.
摘要翻译：磁性薄膜具有相对于外部磁场的磁化方向固定的固定层，其磁化方向根据外部磁场而变化的自由层和夹在所述被钉扎层和所述自由层之间的间隔层层。感应电流被配置为沿着垂直于所述被钉扎层，所述间隔层和所述自由层的膜表面的方向流动。所述间隔层具有包括氧化物区域的CuZn金属合金，所述氧化物区域由Al，Si，Cr，Ti，Hf，Zr，Zn和Mg中的任一种的氧化物组成。

7. 发明授权

US07916431B2 Magnetoresistive element including insulating film touching periphery of spacer layer 有权
标题翻译：磁阻元件包括接触间隔层周边的绝缘膜
公开(公告)号：US07916431B2
公开(公告)日：2011-03-29
申请号：US11892771
申请日：2007-08-27
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/39 , G11B5/31
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996
摘要： An MR element includes a stack of layers including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The stack of layers has an outer surface, and the spacer layer has a periphery located in the outer surface of the stack of layers. The magnetoresistive element further includes an insulating film that touches the periphery of the spacer layer. The spacer layer includes a layer made of an oxide semiconductor composed of an oxide of a first metal. The insulating film includes a contact film that touches the periphery of the spacer layer and that is made of an oxide of a second metal having a Pauling electronegativity lower than that of the first metal by 0.1 or more.
摘要翻译： MR元件包括一叠层，包括第一铁磁层，第二铁磁层和设置在第一和第二铁磁层之间的间隔层。层叠层具有外表面，并且间隔层具有位于层叠层的外表面中的周边。磁阻元件还包括接触间隔层的周边的绝缘膜。间隔层包括由第一金属的氧化物构成的氧化物半导体层。绝缘膜包括接触间隔层的周边的接触膜，并且由具有低于第一金属的Pauling电负性的第二金属的氧化物制成的接触膜为0.1以上。

8. 发明授权

US07881025B2 Magneto-resistive effect device having a spacer layer of a semiconductor layer interposed between first and second nonmagnetic metal layers and a work function control layer for use in a thin-film magnetic head usable in a head gimbal assembly in a hard disk system 有权
标题翻译：具有介于第一和第二非磁性金属层之间的半导体层的间隔层的磁阻效应器件和用于可用于硬盘系统中的头部万向节组件中的薄膜磁头的功函数控制层
公开(公告)号：US07881025B2
公开(公告)日：2011-02-01
申请号：US11931219
申请日：2007-10-31
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata
IPC分类号： G11B5/39
CPC分类号： G11B5/39 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3993 , H01F10/3272 , H01F41/306 , H01L43/08
摘要： The invention provides a CPP-GMR device comprising a spacer layer. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, and further comprises a work function control layer formed between the first nonmagnetic metal layer and the semiconductor layer and/or between the second nonmagnetic metal layer and the semiconductor layer. The semiconductor layer is an n-type semiconductor, and the work function control layer is made of a material having a work function smaller than that of said first nonmagnetic metal layer, and said second nonmagnetic metal layer. It is thus possible to obtain by far more improved advantages.
摘要翻译：本发明提供一种包括间隔层的CPP-GMR装置。间隔层包括由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层，以及介于第一非磁性金属层和第二非磁性金属层之间的半导体层，还包括功函数控制层形成在第一非磁性金属层和半导体层之间和/或第二非磁性金属层与半导体层之间。半导体层是n型半导体，功函数控制层由功函数小于所述第一非磁性金属层的功函数和所述第二非磁性金属层构成。因此可以获得更多改进的优点。

9. 发明授权

US07826180B2 Magneto-resistive effect device of the CPP structure, and magnetic disk system 有权
标题翻译： CPP结构的磁阻效应器，磁盘系统
公开(公告)号：US07826180B2
公开(公告)日：2010-11-02
申请号：US11768435
申请日：2007-06-26
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Shinji Hara
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Shinji Hara
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3967 , H01L43/10
摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the free layer functions such that the direction of magnetization changes depending on an external magnetic field, and the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of zinc oxide, tin oxide, indium oxide, and indium tin oxide (ITO), the first nonmagnetic metal layer is made of Cu, and the second nonmagnetic metal layer is substantially made of Zn. MR change rate and heat resistance are thus much more improved than ever before.
摘要翻译：本发明提供一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），其包括间隔层，以及固定磁化层和自由层，所述固定磁化层和自由层彼此层叠，它们具有沿堆叠方向施加的感测电流，其中自由层起着使得磁化方向取决于外部磁场的作用，并且间隔层包括第一和第二非磁性金属层，每个非磁性金属层由非磁性金属材料和介于第一和第二非磁性金属层之间的半导体氧化物层，其中形成间隔层的一部分的半导体氧化物层由氧化锌，氧化锡，氧化铟和氧化铟锡（ITO ），第一非磁性金属层由Cu制成，第二非磁性金属层基本上由Zn制成。因此，MR变化率和耐热性比以前更加改善。

10. 发明申请

US20100097722A1 MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP类型的磁性装置和磁盘系统
公开(公告)号：US20100097722A1
公开(公告)日：2010-04-22
申请号：US12255105
申请日：2008-10-21
申请人： Tsutomu Chou , Tomohito Mizuno , Koji Shimazawa , Yoshihiro Tsuchiya , Shinji Hara , Hironobu Matsuzawa
发明人： Tsutomu Chou , Tomohito Mizuno , Koji Shimazawa , Yoshihiro Tsuchiya , Shinji Hara , Hironobu Matsuzawa
IPC分类号： G11B5/48 , G11B5/33
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3967 , G11B2005/3996 , H01F10/3254 , H01L43/10
摘要： The semiconductor oxide layer that forms a part of the spacer layer in the inventive giant magnetoresistive device (CPP-GMR device) is composed of zinc oxide of wurtzite structure that is doped with a dopant given by at least one metal element selected from the group consisting of Zn, Ge, V, and Cr in a content of 0.05 to 0.90 at %: there is the advantage obtained that ever higher MR ratios are achievable while holding back an increase in the area resistivity AR.
摘要翻译：在本发明的巨磁阻器件（CPP-GMR器件）中形成间隔层的一部分的半导体氧化物层由纤锌矿结构的氧化锌组成，该氧化锌掺杂有由至少一种选自以下的金属元素所赋予的掺杂剂：的Zn，Ge，V和Cr的含量为0.05〜0.90原子％：具有获得更高MR比可以实现的优点，同时阻止面积电阻率AR的增加。

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