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    • 1. 发明授权
    • Magnetic recording medium for thermally assisted magnetic recording
    • 用于热辅助磁记录的磁记录介质
    • US08481182B2
    • 2013-07-09
    • US12776858
    • 2010-05-10
    • Fumihiro TawaWataru OdajimaShinya Hasegawa
    • Fumihiro TawaWataru OdajimaShinya Hasegawa
    • G11B5/66
    • G11B5/667G11B5/7325G11B5/82G11B2005/0021
    • A magnetic recording medium used for the thermally assisted magnetic recording system which fires a laser beam at a magnetic recording medium to partially heat the medium and applies a magnetic field from the outside to the part heated to lower the coercivity for recording. The magnetic recording medium is configured by a glass substrate on which a heat radiation layer, heat retention layer, intermediate layer, and recording layer are stacked. Further, the heat retention layer is configured by a member having an effective refractive index lower than the effective refractive index of the recording layer and having an temperature diffusion coefficient determined by the specific heat, density, and heat conductivity rate higher than glass and lower than metal. The material with a high temperature diffusion coefficient is used lowered in temperature diffusion coefficient using a porous structure or granular structure.
    • 一种用于热辅助磁记录系统的磁记录介质,其在磁记录介质上激发激光束以部分地加热介质并将磁场从外部施加到被加热以降低用于记录的矫顽力的部分。 磁记录介质由玻璃基板构成,其上堆叠有散热层,保温层,中间层和记录层。 此外,保温层由具有低于记录层的有效折射率的有效折射率的构件构成,并且具有由比玻璃高的比热,密度和导热率确定的温度扩散系数,并且低于 金属。 使用具有高温扩散系数的材料使用多孔结构或颗粒结构降低温度扩散系数。
    • 2. 发明申请
    • Dialysis Apparatus
    • 透析仪
    • US20120302934A1
    • 2012-11-29
    • US13565123
    • 2012-08-02
    • Shinya HasegawaKensaku Tanaka
    • Shinya HasegawaKensaku Tanaka
    • A61M1/14
    • A61M1/342A61M1/3434A61M1/3437A61M1/3465A61M1/3646A61M1/3649
    • A dialysis apparatus has a dialysate infusing line. One end of the dialysate infusing line is connected to the dialysate introducing line or the dialysate discharging line. The other end is branched out at a branch point into two flow routes, respectively, a first branch end and a second branch end. The first branch end is connectable to the arterial blood circuit or the venous blood circuit. The second branch end is connectable to the tip end of the arterial blood circuit during the blood-returning process. A dialysate infusing pump is arranged on the dialysate infusing line at a connection-side of the dialysate infusing line relative to the dialysate introducing line or the dialysate discharging line from the branch point. The dialysate infusing pump supplies the dialysate of the dialysate introducing line or the dialysate discharging line to the first branch end and the second branch end.
    • 透析装置具有透析液输注线。 透析液输注线的一端与透析液导入管或透析液排出管连接。 另一端在分支点处分别分成两条流动路线,分别是第一分支端和第二分支端。 第一分支端可连接到动脉血回路或静脉血回路。 第二分支端在血液返回过程中可连接到动脉血回路的末端。 在透析液注入线的透析液输注线上,相对于透析液导入管或透析液排出管从分支点配置透析液输注泵。 透析液输注泵将透析液引入管线或透析液排出管的透析液供给到第一分支端和第二分支端。
    • 4. 发明申请
    • METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE
    • 制造SOI衬底和半导体器件的方法
    • US20120021588A1
    • 2012-01-26
    • US13184591
    • 2011-07-18
    • Shinya HASEGAWAAtsuo ISOBEMotomu KURATA
    • Shinya HASEGAWAAtsuo ISOBEMotomu KURATA
    • H01L21/265
    • H01L21/76254
    • One object is to provide excellent electric characteristics of an end portion of a single crystal semiconductor layer having a tapered shape. An embrittled region is formed in a single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with accelerated ions. Then, the single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating film interposed therebetween and a first single crystal semiconductor layer is formed over the base substrate with the insulating film interposed therebetween by separating the single crystal semiconductor substrate at the embrittled region. After that, a second single crystal semiconductor layer having a tapered end portion is formed by performing dry etching on the first single crystal semiconductor layer, and etching is performed on the end portion of the second single crystal semiconductor layer in a state where a potential on the base substrate side is a ground potential.
    • 一个目的是提供具有锥形形状的单晶半导体层的端部的优异的电特性。 通过用加速离子照射单晶半导体衬底,在单晶半导体衬底中形成脆化区域。 然后,将单晶半导体衬底和基底衬底彼此接合,并且隔着绝缘膜在基底衬底上形成第一单晶半导体层,通过在第一单晶半导体衬底上分离单晶半导体衬底 脆弱的地区。 之后,通过在第一单晶半导体层上进行干蚀刻来形成具有锥形端部的第二单晶半导体层,并且在第二单晶半导体层的端部进行蚀刻, 基底侧是接地电位。