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1. 发明申请

US20090021661A1 THIN-FILM TRANSISTOR, THIN-FILM TRANSISTOR PRODUCING METHOD, AND DISPLAY APPARATUS 审中-公开
标题翻译：薄膜晶体管，薄膜晶体管生产方法和显示装置
公开(公告)号：US20090021661A1
公开(公告)日：2009-01-22
申请号：US12234127
申请日：2008-09-19
申请人： Shinzo Tsuboi
发明人： Shinzo Tsuboi
IPC分类号： G02F1/136 , H01L21/336 , H01L29/04
CPC分类号： H01L29/78621 , H01L29/04 , H01L29/66757
摘要： A thin-film transistor includes a semiconductor thin film provided on an insulating surface of a support substrate, a gate insulator provided on the semiconductor thin film, and a gate electrode layer formed on the semiconductor thin film with the gate insulator interposed therebetween. The semiconductor thin film includes a channel region disposed below the gate electrode layer, and source and drain regions disposed on both sides of the channel region. The source region has an impurity concentration profile in which an impurity concentration is lowered from an interface with the gate insulator toward an interface with the support substrate in a thickness direction of the semiconductor thin film. The impurity concentration near the support substrate is lower than the impurity concentration near the gate insulator by a factor of 100 or more in the impurity concentration profile of the source region.
摘要翻译：薄膜晶体管包括设置在支撑基板的绝缘表面上的半导体薄膜，设置在半导体薄膜上的栅极绝缘体和形成在半导体薄膜上的栅电极层，栅极绝缘体插入其间。半导体薄膜包括设置在栅电极层下方的沟道区，以及设置在沟道区两侧的源区和漏区。源区具有杂质浓度分布，其中杂质浓度从栅极绝缘体的界面朝向与半导体薄膜的厚度方向的支撑基板的界面降低。在源极区域的杂质浓度分布图中，支撑基板附近的杂质浓度低于栅极绝缘体附近的杂质浓度为100倍以上。

2. 发明申请

US20050212063A1 Thin-film transistor formed on insulating substrate 失效
标题翻译：绝缘基板上形成薄膜晶体管
公开(公告)号：US20050212063A1
公开(公告)日：2005-09-29
申请号：US11085111
申请日：2005-03-22
申请人： Fumiki Nakano , Genshiro Kawachi , Yoshiaki Nakazaki , Shinzo Tsuboi , Takahiko Endo , Tomoya Kato
发明人： Fumiki Nakano , Genshiro Kawachi , Yoshiaki Nakazaki , Shinzo Tsuboi , Takahiko Endo , Tomoya Kato
IPC分类号： H01L21/336 , H01L21/77 , H01L21/8236 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L27/1296 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78696
摘要： There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.
摘要翻译：提供一种薄膜晶体管，其形成在绝缘基板上，能够进行高速运转，器件之间的不均匀性较小，几乎不易受高电压造成的器件破坏，并且不受影响形成在Si岛的边缘部分的寄生晶体管。薄膜半导体器件使用设置在绝缘基板上的薄膜半导体形成，并且包括用于形成漏极电流流过的沟道区域的栅极区域。栅极区域在绝缘基板上具有平面的环形形状。高浓度杂质掺杂区被分割地设置在环形栅极区域的内部和外部，并且沟道区域由多个扇形半导体单晶部分形成。

3. 发明申请

US20050146265A1 Production method for electric filed luminous body electric field luminous body pattening method and electric field light emitting display device 审中-公开
标题翻译：电场发光体电场发光体拍照方法及电场发光显示装置的制作方法
公开(公告)号：US20050146265A1
公开(公告)日：2005-07-07
申请号：US10494799
申请日：2002-11-07
申请人： Takashi Fukuchi , Shinzo Tsuboi , Tsutomu Minami , Masahiro Tatsumisago , Kiyoharu Tadanaga , Atsunori Matsuda
发明人： Takashi Fukuchi , Shinzo Tsuboi , Tsutomu Minami , Masahiro Tatsumisago , Kiyoharu Tadanaga , Atsunori Matsuda
IPC分类号： H01L27/32 , H01L51/40 , H01L51/52 , H01L51/56 , H05B33/00 , H05B33/10
CPC分类号： H01L51/0016 , H01L27/3211 , H01L51/0004 , H01L51/52 , H01L51/56
摘要： A water-repellent/oil-repellent material that is decomposed to disappear by light irradiation is used to eliminate a water-repellent/oil-repellent layer on ITO electrodes. By forming light emitting layers in regions subjected to the elimination, patterning is carried out.
摘要翻译：使用通过光照射分解消失的防水/防油材料来消除ITO电极上的拒水/拒油层。通过在经过消除的区域中形成发光层，进行图案化。

4. 发明授权

US06204995B1 Magnetic disc apparatus 失效
标题翻译：磁盘装置
公开(公告)号：US06204995B1
公开(公告)日：2001-03-20
申请号：US09250421
申请日：1999-02-16
申请人： Hirotaka Hokkyo , Shinzo Tsuboi , Katsumichi Tagami
发明人： Hirotaka Hokkyo , Shinzo Tsuboi , Katsumichi Tagami
IPC分类号： G11B5012
CPC分类号： G11B5/66 , G11B5/012 , G11B5/1278 , G11B5/3967 , G11B2005/0002 , G11B2005/001 , G11B2005/0016 , Y10S428/90 , Y10S428/928 , Y10T428/265
摘要： The present invention provides a magnetic disc apparatus comprising a vertical two-layered magnetic recording (MR) medium and a mono-pole/MR composite head or ID/MR composite head, wherein the vertical two-layered magnetic recording medium includes a vertical magnetization film formed on an undercoat soft magnetic film having no magnetic domain wall structure. This eliminates the fatal defect of a conventional vertical two-layered medium that an undercoat soft magnetic film domain wall is easily shifted by an external magnetic field generated by motors for disc rotation and head positioning, causing demagnetization of the recording magnetization to lower the output. The magnetic disc apparatus according to the present invention enables to obtain a high output stability.
摘要翻译：本发明提供一种包括垂直双层磁记录（MR）介质和单极/ MR复合头或ID / MR复合头的磁盘装置，其中垂直双层磁记录介质包括垂直磁化膜形成在没有磁畴壁结构的底涂软磁膜上。这消除了传统的垂直双层介质的致命缺陷，底层软磁畴畴壁容易被电动机产生的外部磁场移动，用于盘旋转和磁头定位，导致记录磁化的退磁以降低输出。根据本发明的磁盘装置能够获得高输出稳定性。

5. 发明授权

US07309900B2 Thin-film transistor formed on insulating substrate 失效
标题翻译：绝缘基板上形成薄膜晶体管
公开(公告)号：US07309900B2
公开(公告)日：2007-12-18
申请号：US11085111
申请日：2005-03-22
申请人： Fumiki Nakano , Genshiro Kawachi , Yoshiaki Nakazaki , Shinzo Tsuboi , Takahiko Endo , Tomoya Kato
发明人： Fumiki Nakano , Genshiro Kawachi , Yoshiaki Nakazaki , Shinzo Tsuboi , Takahiko Endo , Tomoya Kato
IPC分类号： H01L29/76
CPC分类号： H01L27/1296 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78696
摘要： There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.
摘要翻译：提供一种薄膜晶体管，其形成在绝缘基板上，能够进行高速运转，器件之间的不均匀性较小，几乎不易受高电压造成的器件破坏，并且不受影响形成在Si岛的边缘部分的寄生晶体管。薄膜半导体器件使用设置在绝缘基板上的薄膜半导体形成，并且包括用于形成漏极电流流过的沟道区域的栅极区域。栅极区域在绝缘基板上具有平面的环形形状。高浓度杂质掺杂区被分割地设置在环形栅极区域的内部和外部，并且沟道区域由多个扇形半导体单晶部分形成。

6. 发明申请

US20070228469A1 THIN-FILM TRANSISTOR FORMED ON INSULATING SUBSTRATE 审中-公开
标题翻译：形成绝缘基板的薄膜晶体管
公开(公告)号：US20070228469A1
公开(公告)日：2007-10-04
申请号：US11758217
申请日：2007-06-05
申请人： Fumiki Nakano , Genshiro Kawachi , Yoshiaki Nakazaki , Shinzo Tsuboi , Takahiko Endo , Tomoya Kato
发明人： Fumiki Nakano , Genshiro Kawachi , Yoshiaki Nakazaki , Shinzo Tsuboi , Takahiko Endo , Tomoya Kato
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L27/1296 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78696
摘要： There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.
摘要翻译：提供一种薄膜晶体管，其形成在绝缘基板上，能够进行高速运转，器件之间的不均匀性较小，几乎不易受高电压造成的器件破坏，并且不受影响形成在Si岛的边缘部分的寄生晶体管。薄膜半导体器件使用设置在绝缘基板上的薄膜半导体形成，并且包括用于形成漏极电流流过的沟道区域的栅极区域。栅极区域在绝缘基板上具有平面的环形形状。高浓度杂质掺杂区被分割地设置在环形栅极区域的内部和外部，并且沟道区域由多个扇形半导体单晶部分形成。

7. 发明授权

US08410687B2 Organic electroluminescent device including covered lower electrode 有权
标题翻译：有机电致发光器件包括被覆盖的下电极
公开(公告)号：US08410687B2
公开(公告)日：2013-04-02
申请号：US12236027
申请日：2008-09-23
申请人： Kazuhiko Hayashi , Takashi Fukuchi , Shinzo Tsuboi , Ichiro Fujieda
发明人： Kazuhiko Hayashi , Takashi Fukuchi , Shinzo Tsuboi , Ichiro Fujieda
IPC分类号： H05B33/06 , H01J1/62
CPC分类号： H01L33/08 , H01L27/3211 , H01L27/3244 , H01L27/3248 , H01L51/5225 , H01L51/5253 , H01L2251/5315
摘要： An emitting device in an organic electroluminescent device is disclosed, in which a lower electrode pattern is formed on a substrate, an emitting layer pattern is formed on the lower electrode pattern, and a transparent electrode is formed on the emitting layer pattern and an emitting body having a structure in which an organic thin film emits light when an application current is applied to it. The pattern of the transparent electrode completely covers and is larger than that of the lower electrode. The pattern of the transparent electrode is formed over the entire area of the pattern of the lower electrode.
摘要翻译：公开了一种在有机电致发光器件中的发光器件，其中在基片上形成下电极图案，在下电极图案上形成发光层图案，在发光层图案上形成透明电极，发射体具有当向其施加施加电流时有机薄膜发光的结构。透明电极的图案完全覆盖并且比下电极的图案大。透明电极的图案形成在下电极的图案的整个区域上。

8. 发明授权

US06426157B1 Perpendicular magnetic recording medium 有权
标题翻译：垂直磁记录介质
公开(公告)号：US06426157B1
公开(公告)日：2002-07-30
申请号：US09366251
申请日：1999-08-03
申请人： Hirotaka Hokkyo , Shinzo Tsuboi , Katsumichi Tagami
发明人： Hirotaka Hokkyo , Shinzo Tsuboi , Katsumichi Tagami
IPC分类号： G11B566
CPC分类号： G11B5/653 , G11B5/66 , Y10S428/90 , Y10T428/24942 , Y10T428/264
摘要： The present invention provides a perpendicular magnetic recording medium 11 having a perpendicular magnetization film 22 formed on a substrate 20, wherein a high perpendicular orientation film 24 having higher perpendicular orientation than that of the perpendicular magnetization film 22 is formed over or/and under the perpendicular magnetization film 22.
摘要翻译：本发明提供一种垂直磁记录介质11，其具有形成在基板20上的垂直磁化膜22，其中垂直取向膜垂直取向比垂直磁化膜22高的垂直取向膜24形成在垂直方向上方或/ 磁化膜22。

9. 发明授权

US06387483B1 Perpendicular magnetic recording medium and manufacturing process therefor 有权
标题翻译：垂直磁记录介质及其制造工艺
公开(公告)号：US06387483B1
公开(公告)日：2002-05-14
申请号：US09172911
申请日：1998-10-15
申请人： Hirotaka Hokkyo , Shinzo Tsuboi
发明人： Hirotaka Hokkyo , Shinzo Tsuboi
IPC分类号： G11B566
CPC分类号： G11B5/667 , G11B5/66 , G11B5/851 , Y10S428/90 , Y10T428/26 , Y10T428/265
摘要： It is intended to reduce the media noise, and to improve the recording density dependence of read output voltage. The present invention provides a perpendicular magnetic recording media and its manufacturing process, wherein a perpendicular magnetic recording medium comprises a soft magnetic underlayer film and a perpendicular magnetizing film, these films being formed on a substrate in this order, a smoothness control film such as Cr film, being inserted between the substrate and the soft magnetic underlayer film. Therefore, perpendicular orientation and surface smoothness are improved for the perpendicular magnetizing film laminated on the smooth surface of the soft magnetic underlayer film. As the perpendicular orientation is improved for the perpendicular magnetizing film, the initial layer is reduced, thereby media noise being lowered and recording density dependence of read output voltage being improved. In addition, as the surface smoothness is improved for the perpendicular magnetizing film, sliding characteristics of a recording/reproducing head is also improved, thereby this also lowering the media noise.
摘要翻译：旨在降低介质噪声，并提高读取输出电压的记录密度依赖性。本发明提供一种垂直磁记录介质及其制造方法，其中垂直磁记录介质包括软磁下层膜和垂直磁化膜，这些膜依次形成在基板上，平滑度控制膜如Cr 膜，插入在基板和软磁下层膜之间。因此，对于层压在软磁下层膜的光滑表面上的垂直磁化膜，垂直取向和表面平滑度得到改善。随着垂直磁化膜的垂直取向得到改善，初始层减小，从而介质噪声降低，读取输出电压的记录密度依赖性得到改善。此外，随着垂直磁化膜的表面平滑度得到改善，记录/再现头的滑动特性也得到改善，从而也降低了介质噪声。

10. 发明授权

US06270885B1 Perpendicular magnetic recording medium 失效
标题翻译：垂直磁记录介质
公开(公告)号：US06270885B1
公开(公告)日：2001-08-07
申请号：US09193730
申请日：1998-11-17
申请人： Hirotaka Hokkyo , Shinzo Tsuboi , Katsumichi Tagami
发明人： Hirotaka Hokkyo , Shinzo Tsuboi , Katsumichi Tagami
IPC分类号： G11B566
CPC分类号： G11B5/66 , Y10S428/90 , Y10T428/265
摘要： In a perpendicular magnetic recording medium, a soft magnetic film playing the role of an back layer, but not having a domain wall structure, is positioned beneath a perpendicular magnetization film. Such a back layer improves the envelope characteristic of the medium at the time of recording and reproduction. Moreover, the medium is free from spike noise and the decrease or cancellation of recorded magnetization ascribable to the movement of the domain wall of a back layer. The medium of the present invention is therefore a drastic solution to the problems particular to a conventional perpendicular magnetic recording medium and realizes desirable recording and reproducing characteristics.
摘要翻译：在垂直磁记录介质中，具有背层但不具有畴壁结构的软磁膜位于垂直磁化膜的下方。这种背层改善了记录和再现时介质的包络特性。此外，介质没有尖峰噪声，并且归因于后层的畴壁的移动的记录磁化的减小或消除。因此，本发明的介质是对常规垂直磁记录介质特有的问题的极大的解决方案，并实现期望的记录和再现特性。

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