专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09680094B2 Memory device and method for manufacturing the same 有权
公开(公告)号：US09680094B2
公开(公告)日：2017-06-13
申请号：US13716347
申请日：2012-12-17
申请人： Shosuke Fujii , Takashi Haimoto
发明人： Shosuke Fujii , Takashi Haimoto
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/1266 , H01L27/2472 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/126 , H01L45/148 , H01L45/16
摘要： According to one embodiment, a memory device includes a first electrode, a first resistance change layer, a first insulating section, a second electrode and an intermediate layer. The first resistance change layer is provided on the first electrode. The first insulating section is provided on the first resistance change layer. The second electrode is provided on the first resistance change layer. The second electrode is in contact with the first resistance change layer. The intermediate layer is provided between the second electrode and the first insulating section. The intermediate layer is in contact with the second electrode and the first insulating section.

2. 发明授权

US08710580B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08710580B2
公开(公告)日：2014-04-29
申请号：US13689026
申请日：2012-11-29
申请人： Kiwamu Sakuma , Haruka Kusai , Shosuke Fujii , Li Zhang , Masahiro Kiyotoshi , Masao Shingu
发明人： Kiwamu Sakuma , Haruka Kusai , Shosuke Fujii , Li Zhang , Masahiro Kiyotoshi , Masao Shingu
IPC分类号： H01L45/00 , H01L27/115 , H01L21/265
CPC分类号： H01L27/1157 , H01L21/265 , H01L21/845 , H01L27/11551 , H01L27/11578 , H01L27/1211 , H01L27/2436 , H01L27/2481 , H01L29/42332 , H01L29/7881 , H01L29/792 , H01L45/04
摘要： According to one embodiment, a semiconductor device includes first to n-th semiconductor layers (n is a natural number equal to or more than 2) being stacked in order from a surface of an insulating layer in a first direction perpendicular to the surface of the insulating layer, the first to n-th semiconductor layers extending in a second direction parallel to the surface of the insulating layer, the first to n-th semiconductor layers being insulated from each other, a common electrode connected to the first to n-th semiconductor layers in a first end of the second direction thereof, and a layer select transistor which uses the first to n-th semiconductor layers as channels and which selects one of the first to n-th semiconductor layers.
摘要翻译：根据一个实施例，半导体器件包括第一至第n半导体层（n为等于或大于2的自然数），从绝缘层的表面依次堆叠在与第绝缘层，所述第一至第n半导体层在与所述绝缘层的表面平行的第二方向上延伸，所述第一至第n半导体层彼此绝缘，公共电极连接到所述第一至第n 半导体层，其第二方向的第一端，以及使用第一至第n半导体层作为沟道并选择第一至第n半导体层之一的层选择晶体管。

3. 发明授权

US08450709B2 Nonvolatile resistance change device 有权
标题翻译：非易失性电阻变化装置
公开(公告)号：US08450709B2
公开(公告)日：2013-05-28
申请号：US13052165
申请日：2011-03-21
申请人： Haruka Kusai , Shosuke Fujii , Yasushi Nakasaki
发明人： Haruka Kusai , Shosuke Fujii , Yasushi Nakasaki
IPC分类号： H01L29/02
CPC分类号： H01L45/085 , G11C11/5685 , G11C13/0007 , G11C2213/15 , G11C2213/33 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/148
摘要： According to one embodiment a first variable resistance layer which is arranged between a second electrode and a first electrode and in which a first conductive filament is capable of growing based on metal supplied from the second electrode, and an n-th variable resistance layer which is arranged between an n-th electrode and an (n+1)-th electrode and in which an n-th conductive filament whose growth rate is different from the first conductive filament is capable of growing based on metal supplied from the (n+1)-th electrode are included, a configuration in which a plurality of conductive filaments is electrically connected in series between the first electrode layer and the (n+1)-th electrode layer is included, and a resistance is changed in a stepwise manner.
摘要翻译：根据一个实施例，布置在第二电极和第一电极之间并且第一导电细丝能够基于从第二电极提供的金属生长的第一可变电阻层，以及第n可变电阻层，其是第布置在第n电极和第（n + 1）电极之间，并且其中生长速度不同于第一导电细丝的第n导电细丝能够基于从第（n + 1）个）电极，包括在第一电极层和第（n + 1）电极层之间串联电连接多根导电丝的结构，并且电阻以逐步的方式改变。

4. 发明授权

US08278644B2 Switching device and nonvolatile memory device 有权
标题翻译：开关器件和非易失性存储器件
公开(公告)号：US08278644B2
公开(公告)日：2012-10-02
申请号：US12710942
申请日：2010-02-23
申请人： Shosuke Fujii , Koichi Muraoka
发明人： Shosuke Fujii , Koichi Muraoka
IPC分类号： H01L29/06
CPC分类号： H01L29/51 , H01L29/1606 , H01L29/7781 , H01L29/78
摘要： A switching device includes: a first layer including a carbon material having a six-member ring network structure; a first electrode electrically connected to a first portion of the first layer; a second electrode electrically connected to a second portion of the first layer and provided apart from the first electrode; a third electrode including a fourth portion provided opposing a third portion between the first portion and the second portion of the first layer; and a second layer provided between the third portion of the first layer and the fourth portion of the third electrode. The second layer includes: a base portion; and a functional group portion. The functional group portion is provided between the base portion and the first layer. The functional group portion is bonded to the base portion. A ratio of sp2-bonded carbon and sp3-bonded carbon of the first layer is changeable by a voltage applied between the first layer and the third electrode.
摘要翻译：开关装置包括：第一层，包括具有六元环网结构的碳材料; 电连接到第一层的第一部分的第一电极; 电连接到第一层的第二部分并且与第一电极分开设置的第二电极; 第三电极，包括与所述第一层的第一部分和第二部分之间的第三部分相对设置的第四部分; 以及设置在第一层的第三部分和第三电极的第四部分之间的第二层。第二层包括：基部; 和官能团部分。功能组部分设置在基部和第一层之间。官能团部分结合到基部。第一层的sp2键合碳和sp3键合碳的比例可以通过施加在第一层和第三电极之间的电压而改变。

5. 发明申请

US20100078704A1 SEMICONDUCTOR STORAGE ELEMENT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体存储元件及其制造方法
公开(公告)号：US20100078704A1
公开(公告)日：2010-04-01
申请号：US12404648
申请日：2009-03-16
申请人： Tsunehiro Ino , Shosuke Fujii , Jun Fujiki , Akira Takashima , Masao Shingu , Daisuke Matsushita , Naoki Yasuda , Koichi Muraoka
发明人： Tsunehiro Ino , Shosuke Fujii , Jun Fujiki , Akira Takashima , Masao Shingu , Daisuke Matsushita , Naoki Yasuda , Koichi Muraoka
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/792 , H01L29/517 , H01L29/66833
摘要： A semiconductor storage element includes: a source region and a drain region provided in a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate between the source region and the drain region; a charge storage film provided on the tunnel insulating film; a block insulating film provided on the charge storage film; a gate electrode provided on the block insulating film; and a region containing a gas molecule, the region provided in a neighborhood of an interface between the charge storage film and the block insulating film.
摘要翻译：半导体存储元件包括：设置在半导体衬底中的源极区域和漏极区域; 设置在所述源极区域和所述漏极区域之间的所述半导体衬底上的隧道绝缘膜; 设置在所述隧道绝缘膜上的电荷存储膜; 设置在电荷存储膜上的块状绝缘膜; 设置在所述块绝缘膜上的栅电极; 以及包含气体分子的区域，所述区域设置在电荷存储膜和块绝缘膜之间的界面附近。

6. 发明授权

US09406882B2 Nonvolatile resistance change element 有权
标题翻译：非易失性电阻变化元件
公开(公告)号：US09406882B2
公开(公告)日：2016-08-02
申请号：US13603718
申请日：2012-09-05
申请人： Shosuke Fujii , Hidenori Miyagawa , Reika Ichihara
发明人： Shosuke Fujii , Hidenori Miyagawa , Reika Ichihara
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/145 , H01L27/2472 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/148
摘要： According to one embodiment, a nonvolatile resistance change element includes a first electrode, a second electrode, a first layer and a second layer. The second electrode contains at least one metal element selected from Ag, Cu, Ni, Co, Al, and Ti. The first layer is arranged between the first electrode and the second electrode. The second layer is arranged between the first electrode and the first layer. A diffusion coefficient of the metal element in the second layer is larger than a diffusion coefficient of the metal element in the first layer.
摘要翻译：根据一个实施例，非易失性电阻变化元件包括第一电极，第二电极，第一层和第二层。第二电极含有选自Ag，Cu，Ni，Co，Al和Ti中的至少一种金属元素。第一层布置在第一电极和第二电极之间。第二层布置在第一电极和第一层之间。金属元素在第二层中的扩散系数大于第一层中的金属元素的扩散系数。

7. 发明授权

US08916848B2 Resistance change device and memory cell array 有权
标题翻译：电阻变化器和存储单元阵列
公开(公告)号：US08916848B2
公开(公告)日：2014-12-23
申请号：US13598305
申请日：2012-08-29
申请人： Shosuke Fujii , Daisuke Matsushita , Yuichiro Mitani
发明人： Shosuke Fujii , Daisuke Matsushita , Yuichiro Mitani
IPC分类号： H01L47/00 , H01L45/00 , H01L27/24 , G11C13/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/1266 , H01L45/145
摘要： According to one embodiment, a resistance change device includes a first electrode including a metal, a second electrode, and an amorphous oxide layer including Si and O between the first and second electrode, the layer having a concentration gradient of O and a first peak thereof in a direction from the first electrode to the second electrode.
摘要翻译：根据一个实施例，电阻改变装置包括在第一和第二电极之间包括金属，第二电极和包括Si和O的无定形氧化物层的第一电极，具有浓度梯度为O的层和其第一峰值在从第一电极到第二电极的方向上。

8. 发明申请

US20140070160A1 NONVOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储器件
公开(公告)号：US20140070160A1
公开(公告)日：2014-03-13
申请号：US13714946
申请日：2012-12-14
申请人： Takayuki ISHIKAWA , Yoshifumi NISHI , Shosuke FUJII
发明人： Takayuki ISHIKAWA , Yoshifumi NISHI , Shosuke FUJII
IPC分类号： H01L45/00
CPC分类号： H01L45/14 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/148 , H01L45/165 , H01L45/1658
摘要： According to one embodiment, a nonvolatile memory device includes a first electrode, a second electrode, a variable resistance layer. The variable resistance layer is provided between the first electrode and the second electrode. The variable resistance layer contains impurity of a nonmetallic element. The impurity is at least one selected from the group consisting of S, Se, Te, F, Cl, Br, and I.
摘要翻译：根据一个实施例，非易失性存储器件包括第一电极，第二电极，可变电阻层。可变电阻层设置在第一电极和第二电极之间。可变电阻层含有非金属元素的杂质。杂质是选自S，Se，Te，F，Cl，Br和I中的至少一种。

9. 发明申请

US20140061570A1 MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：存储器件及其制造方法
公开(公告)号：US20140061570A1
公开(公告)日：2014-03-06
申请号：US13716347
申请日：2012-12-17
申请人： Shosuke FUJII , Takashi Haimoto
发明人： Shosuke FUJII , Takashi Haimoto
IPC分类号： H01L45/00
CPC分类号： H01L45/1266 , H01L27/2472 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/126 , H01L45/148 , H01L45/16
摘要： According to one embodiment, a memory device includes a first electrode, a first resistance change layer, a first insulating section, a second electrode and an intermediate layer. The first resistance change layer is provided on the first electrode. The first insulating section is provided on the first resistance change layer. The second electrode is provided on the first resistance change layer. The second electrode is in contact with the first resistance change layer. The intermediate layer is provided between the second electrode and the first insulating section. The intermediate layer is in contact with the second electrode and the first insulating section.
摘要翻译：根据一个实施例，存储器件包括第一电极，第一电阻改变层，第一绝缘部分，第二电极和中间层。第一电阻变化层设置在第一电极上。第一绝缘部设置在第一电阻变化层上。第二电极设置在第一电阻变化层上。第二电极与第一电阻变化层接触。中间层设置在第二电极和第一绝缘部之间。中间层与第二电极和第一绝缘部分接触。

10. 发明申请

US20130228736A1 MEMORY DEVICE 有权
标题翻译：内存设备
公开(公告)号：US20130228736A1
公开(公告)日：2013-09-05
申请号：US13599504
申请日：2012-08-30
申请人： Daisuke MATSUSHITA , Shosuke Fujii , Yoshifumi Nishi , Akira Takashima , Takayuki Ishikawa , Hidenori Miyagawa , Takashi Haimoto , Yusuke Arayashiki , Hideki Inokuma
发明人： Daisuke MATSUSHITA , Shosuke Fujii , Yoshifumi Nishi , Akira Takashima , Takayuki Ishikawa , Hidenori Miyagawa , Takashi Haimoto , Yusuke Arayashiki , Hideki Inokuma
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/148
摘要： According to one embodiment, a memory device includes a first electrode, a second electrode, and a variable resistance film. The variable resistance film is connected between the first electrode and the second electrode. The first electrode includes a metal contained in a matrix made of a conductive material. A cohesive energy of the metal is lower than a cohesive energy of the conductive material. A concentration of the metal at a central portion of the first electrode in a width direction thereof is higher than concentrations of the metal in two end portions of the first electrode in the width direction.
摘要翻译：根据一个实施例，存储器件包括第一电极，第二电极和可变电阻膜。可变电阻膜连接在第一电极和第二电极之间。第一电极包括由导电材料制成的基体中所含的金属。金属的内聚能低于导电材料的内聚能。第一电极的宽度方向的中央部的金属浓度高于第一电极的宽度方向的两端部的金属的浓度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式