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    • 4. 发明申请
    • METHOD FOR PURIFYING CHLOROSILANES
    • 纯化氯霉素的方法
    • US20130177492A1
    • 2013-07-11
    • US13822673
    • 2011-09-02
    • Masayuki HasegawaYoichi TonomuraTohru KubotaTakeshi AoyamaShuji Tanaka
    • Masayuki HasegawaYoichi TonomuraTohru KubotaTakeshi AoyamaShuji Tanaka
    • C01B33/107
    • C01B33/10794C01B33/1071C01B33/10763C01B33/10778
    • The method comprises at least three steps of a hydrogenation step (101) and/or a chlorination step (102), an impurity conversion step (103), and a purification step (104). In the impurity conversion step (103), an aldehyde compound represented by the general formula Ar—R—CHO (Ar; denotes a substituted or unsubstituted aryl group, R; denotes an organic group having two or more carbon atoms) is added to convert donor impurities and acceptor impurities contained in a chlorosilane distillate to a high-boiling substance. The chlorosilane distillate after the donor impurities and acceptor impurities have been converted to a high-boiling substance is sent to the purification step (104). In the purification step (104), high purity chlorosilanes from which the donor impurities and acceptor impurities have been thoroughly removed are obtained by using a distillation column or the like, where the high purity chlorosilanes are recovered outside the system from the top of the column.
    • 该方法包括氢化步骤(101)和/或氯化步骤(102),杂质转化步骤(103)和纯化步骤(104)的至少三个步骤。 在杂质转化步骤(103)中,添加由通式Ar-R-CHO(Ar;表示取代或未取代的芳基R表示具有两个或更多个碳原子的有机基团)表示的醛化合物以转化 供体杂质和包含在氯硅烷馏出物中的受主杂质转化成高沸点物质。 将供体杂质和受体杂质转化为高沸点物质后的氯硅烷馏出物送至纯化步骤(104)。 在纯化步骤(104)中,通过使用蒸馏塔等获得供体杂质和受体杂质被彻底除去的高纯度氯硅烷,其中高纯度氯硅烷从塔顶返回到系统外部 。
    • 6. 发明授权
    • Semiconductor device with field insulation film formed therein
    • 其中形成有场绝缘膜的半导体器件
    • US07705399B2
    • 2010-04-27
    • US11708685
    • 2007-02-21
    • Shuji TanakaShuichi KikuchiKiyofumi Nakaya
    • Shuji TanakaShuichi KikuchiKiyofumi Nakaya
    • H01L29/76
    • H01L29/7835H01L29/086H01L29/0878H01L29/0886H01L29/402H01L29/66659
    • The invention provides a high voltage MOS transistor having a high gate breakdown voltage and a high source/drain breakdown voltage and having a low on-resistance. A gate electrode is formed on an epitaxial silicon layer with a LOCOS film being interposed therebetween. A P-type first drift layer is formed on the left side of the LOCOS film, and a P+-type source layer is disposed on the surface of the epitaxial silicon layer on the right side of the LOCOS film, being opposed to the first drift layer over the gate electrode. A P-type second drift layer is formed by being diffused in the epitaxial silicon layer deeper than the first drift layer, extending from under the first drift layer to under the left side of the LOCOS film. A recess is formed in a bottom portion of the second drift layer under the left end of the LOCOS film.
    • 本发明提供具有高栅极击穿电压和高源极/漏极击穿电压并具有低导通电阻的高压MOS晶体管。 栅电极形成在外延硅层上,其中介于其间的LOCOS膜。 在LOCOS膜的左侧形成P型第一漂移层,并且在LOCOS膜的右侧的外延硅层的表面上设置P +型源极层,与第一漂移相对 层上的栅电极。 通过在比第一漂移层更深的外延硅层中扩散P型第二漂移层,从第一漂移层下方延伸到LOCOS膜的左侧。 在LOCOS膜的左端下方的第二漂移层的底部形成凹部。
    • 9. 发明申请
    • Method for Fabricating Micromachine Component of Resin
    • 制造树脂微机械成分的方法
    • US20090035706A1
    • 2009-02-05
    • US11922529
    • 2006-06-15
    • Nao HondaSatoshi MoriShuji TanakaMasayoshi Esashi
    • Nao HondaSatoshi MoriShuji TanakaMasayoshi Esashi
    • G03F7/20
    • F04D29/281B29C64/106B29C64/124B29L2031/7496B81C99/008F04D29/023F05D2230/31F05D2300/44
    • A method for fabricating a micromachine component of resin comprising step (a) of forming a sacrifice layer on a substrate, step (b) of forming at least two photosensitive resin composition layers sequentially on the sacrifice layer, and performing photolithography of each photosensitive resin composition layer to form an air gap portion defining the circumferential edge potion of the micromachine component and an air gap portion where an internal structure of the micromachine component is constituted to form a multilayer structure, step (c) for depositing dry film resist on the multilayer structure of the cured photosensitive resin composition layer, and performing photolithography of the dry film resist layer to form a cured dry film resist layer in which an air gap portion defining the circumferential edge of a shroud layer and an air gap where the structure of the shroud layer is constituted are formed, and step (d) for separating the micromachine component having the multilayer structure of the cured photosensitive resin composition layer and the cured dry film resist layer from the substrate by removing the sacrifice layer.
    • 一种用于制造树脂微机械部件的方法,包括在基板上形成牺牲层的步骤(a),在牺牲层上依次形成至少两个感光性树脂组合物层的步骤(b),并对各感光性树脂组合物进行光刻 以形成限定微机械部件的周向边缘部分的气隙部分和构成微机械部件的内部结构以形成多层结构的气隙部分,用于在多层结构上沉积干膜抗蚀剂的步骤(c) 并进行干膜抗蚀剂层的光刻,形成固化的干膜抗蚀剂层,其中限定了护罩层的周缘的气隙部分和护罩层的结构的气隙 形成,并且步骤(d)用于分离具有多层st的微机械部件 通过除去牺牲层从固化的光敏树脂组合物层和固化的干膜抗蚀剂层的结构。