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1. 发明申请

US20150003016A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SYSTEM 审中-公开
标题翻译：半导体器件和半导体系统
公开(公告)号：US20150003016A1
公开(公告)日：2015-01-01
申请号：US14361757
申请日：2012-03-19
申请人： Noboru Miyamoto , Takaaki Shirasawa
发明人： Noboru Miyamoto , Takaaki Shirasawa
IPC分类号： H01L23/473 , H01L23/16
CPC分类号： H01L23/473 , H01L23/16 , H01L23/4334 , H01L2924/0002 , H01L2924/00
摘要： It is an object of the present invention to provide a semiconductor device which is easily replaceable and a semiconductor system using the semiconductor device. The semiconductor device of the present invention includes a semiconductor chip, a cooler that cools the semiconductor chip, a housing that houses the semiconductor chip and the cooler, a transfer resin that seals the semiconductor chip and the cooler inside the housing, electrodes connected to the semiconductor chip, and a joining pipe attached to the cooler, the joining pipe letting in and out a flow of a refrigerant from and to the cooler. The electrodes and the joining pipe are formed to protrude from the same surface of the housing in substantially the same direction.
摘要翻译：本发明的目的是提供一种易于替换的半导体器件和使用该半导体器件的半导体系统。本发明的半导体器件包括半导体芯片，冷却半导体芯片的冷却器，容纳半导体芯片和冷却器的壳体，密封壳体内的半导体芯片和冷却器的转移树脂，连接到半导体芯片的电极半导体芯片和连接到冷却器的接合管，接合管使制冷剂从冷却器流出。电极和接合管形成为从壳体的相同表面沿基本相同的方向突出。

2. 发明申请

US20050199999A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20050199999A1
公开(公告)日：2005-09-15
申请号：US11066140
申请日：2005-02-25
申请人： Takaaki Shirasawa , Tsuyoshi Takayama
发明人： Takaaki Shirasawa , Tsuyoshi Takayama
IPC分类号： H01L23/34 , H01L23/10 , H01L23/40 , H01L23/62 , H01L25/07
CPC分类号： H01L23/3735 , H01L23/053 , H01L23/34 , H01L24/45 , H01L24/48 , H01L25/18 , H01L2224/05553 , H01L2224/45124 , H01L2224/48137 , H01L2924/00014 , H01L2924/01068 , H01L2924/12036 , H01L2924/1305 , H01L2924/13055 , H01L2924/19107 , H01L2924/00 , H01L2224/05599
摘要： One of the aspects of the present invention is to provide a semiconductor device including a semiconductor element or chip, which has a peripheral edge and a central portion and is mounted on an insulating substrate via a conductive bonding layer. At least one peripheral thermal sensor is arranged adjacent the peripheral edge on the semiconductor element, and at least one central thermal sensor is arranged adjacent the central portion on the semiconductor element.
摘要翻译：本发明的一个方面是提供一种包括半导体元件或芯片的半导体器件，该半导体元件或芯片具有周缘和中心部分，并且经由导电接合层安装在绝缘基板上。至少一个外围热传感器被布置成与半导体元件上的外围边缘相邻，并且至少一个中心热传感器被布置成与半导体元件上的中心部分相邻。

3. 发明申请

US20090302444A1 RESIN SEALED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：树脂密封半导体器件及其制造方法
公开(公告)号：US20090302444A1
公开(公告)日：2009-12-10
申请号：US12196590
申请日：2008-08-22
申请人： Tetsuya UEDA , Takaaki Shirasawa
发明人： Tetsuya UEDA , Takaaki Shirasawa
IPC分类号： H01L23/495 , H01L21/56
CPC分类号： H01L23/5385 , H01L21/565 , H01L23/4334 , H01L23/49537 , H01L24/48 , H01L24/49 , H01L24/97 , H01L25/117 , H01L25/18 , H01L2224/48091 , H01L2224/48247 , H01L2224/49175 , H01L2924/00014 , H01L2924/01068 , H01L2924/01077 , H01L2924/01087 , H01L2924/12044 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A resin sealed semiconductor device includes a first semiconductor switching device having a first emitter terminal and a first collector terminal bonded to its top and bottom surfaces respectively, a second semiconductor switching device having a second emitter terminal and a second collector terminal bonded to its top and bottom surfaces respectively, a first heat sink directly or indirectly bonded to the first collector terminal, a second heat sink directly or indirectly bonded to the second collector terminal, and a molding resin integrally covering the first and second semiconductor switching devices. The first and second heat sinks are exposed from the molding resin. The first emitter terminal faces and is spaced apart from the second emitter terminal.
摘要翻译：树脂密封半导体器件包括第一半导体开关器件，其具有分别与其顶表面和底表面结合的第一发射极端子和第一集电极端子，第二半导体开关器件具有第二发射极端子和与其顶部接合的第二集电极端子，直接或间接地接合到第一集电端子的第一散热器，直接或间接地结合到第二集电端子的第二散热器，以及整体地覆盖第一和第二半导体开关器件的模制树脂。第一和第二散热片从成型树脂露出。第一发射极端子面与第二发射极端子间隔开。

4. 发明授权

US07772709B2 Resin sealed semiconductor device and manufacturing method therefor 有权
标题翻译：树脂密封半导体器件及其制造方法
公开(公告)号：US07772709B2
公开(公告)日：2010-08-10
申请号：US12196590
申请日：2008-08-22
申请人： Tetsuya Ueda , Takaaki Shirasawa
发明人： Tetsuya Ueda , Takaaki Shirasawa
IPC分类号： H01L23/28 , H01L21/48
CPC分类号： H01L23/5385 , H01L21/565 , H01L23/4334 , H01L23/49537 , H01L24/48 , H01L24/49 , H01L24/97 , H01L25/117 , H01L25/18 , H01L2224/48091 , H01L2224/48247 , H01L2224/49175 , H01L2924/00014 , H01L2924/01068 , H01L2924/01077 , H01L2924/01087 , H01L2924/12044 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A resin sealed semiconductor device includes a first semiconductor switching device having a first emitter terminal and a first collector terminal bonded to its top and bottom surfaces respectively, a second semiconductor switching device having a second emitter terminal and a second collector terminal bonded to its top and bottom surfaces respectively, a first heat sink directly or indirectly bonded to the first collector terminal, a second heat sink directly or indirectly bonded to the second collector terminal, and a molding resin integrally covering the first and second semiconductor switching devices. The first and second heat sinks are exposed from the molding resin. The first emitter terminal faces and is spaced apart from the second emitter terminal.
摘要翻译：树脂密封半导体器件包括第一半导体开关器件，其具有分别与其顶表面和底表面结合的第一发射极端子和第一集电极端子，第二半导体开关器件具有第二发射极端子和与其顶部接合的第二集电极端子，直接或间接地接合到第一集电端子的第一散热器，直接或间接地结合到第二集电端子的第二散热器，以及整体地覆盖第一和第二半导体开关器件的模制树脂。第一和第二散热片从成型树脂露出。第一发射极端子面与第二发射极端子间隔开。

5. 发明授权

US06819149B2 Gate drive device for reducing a surge voltage and switching loss 有权
标题翻译：栅极驱动装置，用于降低浪涌电压和开关损耗
公开(公告)号：US06819149B2
公开(公告)日：2004-11-16
申请号：US10457348
申请日：2003-06-10
申请人： Takaaki Shirasawa , Tsuyoshi Takayama
发明人： Takaaki Shirasawa , Tsuyoshi Takayama
IPC分类号： H03K1704
CPC分类号： H03K17/162
摘要： In a circuit having MOS transistors connected in series, a surge voltage that occurs during off periods is reduced, while suppressing an increase in switching loss at turning off of the MOS transistors. When a first power MOSFET (1) is turned off and then a second power MOSFET (2) is turned on after that according to predetermined timing, the first power MOSFET (1) is temporarily placed in an on state for a predetermined time period synchronized with that predetermined timing. On the other hand, when the second power MOSFET (2) is turned off and then the first power MOSFET (1) is turned on after that according to predetermined timing, the second power MOSFET (2) is temporarily placed in an on state for a predetermined time period synchronized with that predetermined timing.
摘要翻译：在具有串联连接的MOS晶体管的电路中，在抑制MOS晶体管截止时的开关损耗的增加的同时，减小在关断期间发生的浪涌电压。当第一功率MOSFET（1）关断，然后根据预定定时接通第二功率MOSFET（2）时，第一功率MOSFET（1）暂时处于接通状态一段预定时间段与该预定定时。另一方面，当第二功率MOSFET（2）关断，然后根据预定定时使第一功率MOSFET（1）导通时，第二功率MOSFET（2）暂时置于导通状态与该预定定时同步的预定时间段。

6. 发明授权

US06642576B1 Power semiconductor device having layered structure of power semiconductor elements and terminal members 有权
标题翻译：功率半导体器件具有功率半导体元件和端子元件的分层结构
公开(公告)号：US06642576B1
公开(公告)日：2003-11-04
申请号：US10330438
申请日：2002-12-30
申请人： Takaaki Shirasawa , Yasuo Koutake , Tsuyoshi Takayama , Natsuki Tsuji
发明人： Takaaki Shirasawa , Yasuo Koutake , Tsuyoshi Takayama , Natsuki Tsuji
IPC分类号： H01L2976
CPC分类号： H01L25/071 , H01L25/18 , H01L2224/32225 , H01L2224/32245 , H01L2924/09701 , H01L2924/1305 , H01L2924/13055 , H01L2924/3011 , H01L2924/00
摘要： An IGBT (121) and a diode (131) are joined onto an element arrangement portion (111a) of a first terminal member (111) and an element arrangement portion (112a) of a second terminal member (112) is joined onto the IGBT (121) and the diode (131). Further, an IGBT (122) and a diode (132) are joined onto the element arrangement portion (112a) of the second terminal member (112) and an element arrangement portion (113a) of a third terminal member (113) is joined onto the IGBT (122) and the diode (132). A transfer mold package (141) is so formed as to house the elements (121, 122, 131, 132). External connection portions (111b, 112b, 113b) of the terminal members (111, 112, 113) are drawn out of the package (141). The element arrangement portion(s) (111a, 113a) of the first and/or third terminal member (111, 113) are/is exposed out of the package (141).
摘要翻译：将IGBT（121）和二极管（131）接合到第一端子部件（111）的元件配置部（111a）上，将第二端子部件（112）的元件配置部（112a）接合到IGBT （121）和二极管（131）。此外，IGBT（122）和二极管（132）接合到第二端子构件（112）的元件布置部分（112a）上，并且第三端子构件（113）的元件布置部分（113a）接合到 IGBT（122）和二极管（132）。传送模具包装141被形成为容纳元件121,122,131,132。端子构件（111,112,113）的外部连接部分（111b，112b，113b）从封装（141）中拉出。第一和/或第三端子构件（111,113）的元件排列部分（111a，113a）从包装（141）中露出。

7. 发明授权

US06291826B1 Semiconductor element for electric power with a diode for sensing temperature and a diode for absorbing static electricity 失效
标题翻译：用于感应温度的二极管用于电力的半导体元件和用于吸收静电的二极管
公开(公告)号：US06291826B1
公开(公告)日：2001-09-18
申请号：US09705755
申请日：2000-11-06
申请人： Mitsunori Kub{overscore (o)} , Takeshi Ohmaru , Takaaki Shirasawa , Gourab Majumdar
发明人： Mitsunori Kub{overscore (o)} , Takeshi Ohmaru , Takaaki Shirasawa , Gourab Majumdar
IPC分类号： G01T124
CPC分类号： H01L29/7804 , G01K7/015 , H01L23/34 , H01L24/48 , H01L24/49 , H01L27/0248 , H01L29/0692 , H01L29/0696 , H01L29/7395 , H01L2224/05553 , H01L2224/05599 , H01L2224/48 , H01L2224/49 , H01L2224/85399 , H01L2924/00014 , H01L2924/0102 , H01L2924/01068 , H01L2924/01084 , H01L2924/12036 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , Y10S323/907 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099 , H01L2924/00012
摘要： A first diode part (1B) for sensing junction temperature and a second diode part (1C) for absorbing static electricity that are included in a semiconductor element (1) for electric power are formed within the same substrate together with a semiconductor element part (1A) for electric power. Moreover, the number of a plurality of second diodes (1CD) constituting the second diode part (1C) is equal to the number of a plurality of first diodes (1BD) constituting the first diode part (1B). In addition, a capacitor (11) for reducing the impedance is disposed between the input terminals of a forward direction voltage fall operating amplifying circuit part (4) of a controlling circuit part (8). Here, it is effective to form an LC low pass filter as well by covering a forward path side relay lead part (9A) and a backward path side relay lead part (9B) with one tubular ferrite core.
摘要翻译：用于感测结温的第一二极管部分（1B）和用于吸收电力的半导体元件（1）中包含的用于吸收静电的第二二极管部分（1C）与半导体元件部分（1A）形成在同一基板内）用于电力。此外，构成第二二极管部件（1C）的多个第二二极管（1CD）的数量等于构成第一二极管部件（1B）的多个第一二极管（1BD）的数量。此外，用于减小阻抗的电容器（11）设置在控制电路部分（8）的正向压降操作放大电路部分（4）的输入端之间。这里，通过用一个管状铁氧体磁芯覆盖正向路径侧继电器引线部分（9A）和反向路径侧继电器引线部分（9B）也可以形成LC低通滤波器。

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