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1. 发明授权

US09112042B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US09112042B2
公开(公告)日：2015-08-18
申请号：US13611279
申请日：2012-09-12
申请人： Wei-Chou Lan , Ted-Hong Shinn , Henry Wang , Chia-Chun Yeh
发明人： Wei-Chou Lan , Ted-Hong Shinn , Henry Wang , Chia-Chun Yeh
IPC分类号： H01L29/786 , H01L29/49
CPC分类号： H01L29/78696 , H01L29/4908
摘要： A thin film transistor suitable for being disposed on a substrate is provided. The thin film transistor includes a gate electrode, an organic gate dielectric layer, a metal oxide semiconductor layer, a source electrode and a drain electrode. The gate electrode is disposed on the substrate. The organic gate dielectric layer is disposed on the substrate to cover the gate electrode. The source electrode, the drain electrode and the metal oxide semiconductor layer are disposed above the organic gate dielectric layer, and the metal oxide semiconductor layer contacts with the source electrode and the drain electrode. Because the channel layer of the thin film transistor is a layer of metal oxide semiconductor formed at a lower temperature, thus the thin film transistor can be widely applied into various display applications such as flexible display devices.
摘要翻译：提供了适合于设置在基板上的薄膜晶体管。薄膜晶体管包括栅电极，有机栅介质层，金属氧化物半导体层，源电极和漏电极。栅电极设置在基板上。有机栅极介电层设置在基板上以覆盖栅电极。源电极，漏电极和金属氧化物半导体层设置在有机栅极电介质层的上方，金属氧化物半导体层与源电极和漏电极接触。由于薄膜晶体管的沟道层是在较低温度下形成的金属氧化物半导体层，因此薄膜晶体管可以广泛地应用于诸如柔性显示器件的各种显示应用中。

2. 发明授权

US09069131B2 Transfer print structure and the manufacturing method thereof 有权
标题翻译：转印结构及其制造方法
公开(公告)号：US09069131B2
公开(公告)日：2015-06-30
申请号：US13107570
申请日：2011-05-13
申请人： Fang-An Shu , Ted-Hong Shinn , Yao-Chou Tsai , Wen-Chung Tang
发明人： Fang-An Shu , Ted-Hong Shinn , Yao-Chou Tsai , Wen-Chung Tang
IPC分类号： G02B26/00 , G09G3/34 , B44C1/17 , G02B5/20 , G02B26/02 , B41M3/00 , B41M3/12 , B32B7/06 , B44C1/16 , B41M5/124 , B41M5/382 , B41M5/50 , G02F1/167
CPC分类号： G02B5/201 , B32B7/06 , B41M3/00 , B41M3/12 , B41M5/124 , B41M5/38271 , B41M5/502 , B44C1/16 , B44C1/17 , G02B26/00 , G02B26/026 , G02F1/167
摘要： A transfer print structure is provided. The transfer print structure comprises a substrate; a color ink layer including a functional region; and an adhesive device combining the functional region with the substrate.
摘要翻译：提供转印印刷结构。转印印刷结构包括基材; 包括功能区域的彩色油墨层; 以及将功能区域与基板结合的粘合装置。

3. 发明授权

US08952618B2 Compensation method and apparatus for light emitting diode circuit 有权
标题翻译：发光二极管电路的补偿方法和装置
公开(公告)号：US08952618B2
公开(公告)日：2015-02-10
申请号：US13157398
申请日：2011-06-10
申请人： Chuan-I Huang , Chin-Wen Lin , Hsing-Yi Wu , Ted-Hong Shinn
发明人： Chuan-I Huang , Chin-Wen Lin , Hsing-Yi Wu , Ted-Hong Shinn
IPC分类号： G09G3/10 , G09G3/32
CPC分类号： G09G3/3233 , G09G3/3283 , G09G2300/0819 , G09G2300/0857
摘要： A compensation method for a light emitting diode (LED) circuit including a first transistor, a second transistor, a capacitor, and a LED is illustrated. A first end as a control end of the first transistor is connected to one end of the second transistor and the capacitor, and a second end of the first transistor is connected to the LED. A width to length (W/L) ratio of the second transistor is less than one. An initial control voltage is applied to a control end of the second transistor, and the current output voltage of the LED is correspondingly measured. If a difference between the current output voltage and an initial output voltage exceeds a predetermined value, a compensation voltage, which is a summation of the initial control voltage and the difference, is applied to the control end of the second transistor.
摘要翻译：示出了包括第一晶体管，第二晶体管，电容器和LED的发光二极管（LED）电路的补偿方法。作为第一晶体管的控制端的第一端连接到第二晶体管和电容器的一端，并且第一晶体管的第二端连接到LED。第二晶体管的宽比（W / L）比小于1。将初始控制电压施加到第二晶体管的控制端，并相应地测量LED的电流输出电压。如果电流输出电压和初始输出电压之间的差超过预定值，则将作为初始控制电压和差值的总和的补偿电压施加到第二晶体管的控制端。

4. 发明授权

US08933563B2 Three-dimension circuit structure and semiconductor device 有权
标题翻译：三维电路结构及半导体器件
公开(公告)号：US08933563B2
公开(公告)日：2015-01-13
申请号：US13572711
申请日：2012-08-13
申请人： Wei-Chou Lan , Ted-Hong Shinn , Henry Wang , Chia-Chun Yeh
发明人： Wei-Chou Lan , Ted-Hong Shinn , Henry Wang , Chia-Chun Yeh
IPC分类号： H01L29/43 , H01L23/485 , H01L23/532
CPC分类号： H01L29/78603 , H01L29/42384 , H01L29/4908
摘要： A three-dimension circuit structure includes a substrate, a first conductive layer, a filled material and a second conductive layer. The substrate has an upper surface and a cavity located at the upper surface. The first conductive layer covers the inside walls of the cavity and protrudes out the upper surface. The filled material fills the cavity and covers the first conductive layer. The second conductive layer covers the filled material and a portion of the first conductive layer, and the first conductive layer and the second conductive layer encapsulate the filled material. The material of the filled material is different from that of the first conductive layer and the second conductive layer.
摘要翻译：三维电路结构包括衬底，第一导电层，填充材料和第二导电层。基板具有位于上表面的上表面和空腔。第一导电层覆盖空腔的内壁并从上表面突出。填充材料填充空腔并覆盖第一导电层。第二导电层覆盖填充材料和第一导电层的一部分，并且第一导电层和第二导电层封装填充材料。填充材料的材料与第一导电层和第二导电层的材料不同。

5. 发明授权

US08901555B2 Light sensing device 有权
标题翻译：感光装置
公开(公告)号：US08901555B2
公开(公告)日：2014-12-02
申请号：US13550616
申请日：2012-07-17
申请人： Chia-Chun Yeh , Henry Wang , Wei-Chou Lan , Ted-Hong Shinn
发明人： Chia-Chun Yeh , Henry Wang , Wei-Chou Lan , Ted-Hong Shinn
IPC分类号： H01L31/0264 , H01L21/00 , H01L29/08 , H01L27/30 , H01L27/12 , H01L31/032 , H01L31/113 , H01L51/00 , H01L51/42
CPC分类号： H01L27/307 , H01L27/1225 , H01L31/032 , H01L31/1136 , H01L51/0036 , H01L51/422 , Y10S977/735
摘要： A light sensing device is disclosed. The light sensing device includes a first light sensor and a second light sensor. The first light sensor formed on a substrate includes a first metal oxide semiconductor layer for absorbing a first light having a first waveband. The second light sensor formed on the substrate includes a second metal oxide semiconductor layer and an organic light-sensitive layer on the second metal oxide semiconductor layer for absorbing a second light having a second waveband.
摘要翻译：公开了一种感光装置。光感测装置包括第一光传感器和第二光传感器。形成在基板上的第一光传感器包括用于吸收具有第一波段的第一光的第一金属氧化物半导体层。形成在基板上的第二光传感器包括在第二金属氧化物半导体层上的第二金属氧化物半导体层和有机感光层，用于吸收具有第二波段的第二光。

6. 发明授权

US08896922B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08896922B2
公开(公告)日：2014-11-25
申请号：US12964373
申请日：2010-12-09
申请人： Yung-Sheng Chang , Chia-Chun Yeh , Yao Peng , Ted-Hong Shinn
发明人： Yung-Sheng Chang , Chia-Chun Yeh , Yao Peng , Ted-Hong Shinn
IPC分类号： G02B5/30 , G02B27/28 , G02F1/167
CPC分类号： G02F1/167
摘要： A display device includes a transparent active element array substrate and a color display layer. The transparent active element array substrate has a first surface and a second surface opposite to the first surface. The color display layer disposed on the first surface of the transparent active element array substrate.
摘要翻译：显示装置包括透明有源元件阵列基板和彩色显示层。透明有源元件阵列基板具有与第一表面相对的第一表面和第二表面。所述彩色显示层设置在所述透明有源元件阵列基板的第一表面上。

7. 发明授权

US08808486B2 Method for manufacturing color electrophoretic display device 有权
标题翻译：彩色电泳显示装置的制造方法
公开(公告)号：US08808486B2
公开(公告)日：2014-08-19
申请号：US12905691
申请日：2010-10-15
申请人： Yi-Ching Wang , Po-Wen Hsiao , Kai-Cheng Chuang , Yao-Chou Tsai , Ted-Hong Shinn
发明人： Yi-Ching Wang , Po-Wen Hsiao , Kai-Cheng Chuang , Yao-Chou Tsai , Ted-Hong Shinn
IPC分类号： B29C65/48 , B32B37/14 , B32B38/14 , G02F1/167 , B32B37/26
CPC分类号： G02F1/167 , G02F1/133516
摘要： A method for manufacturing a color electrophoretic display device includes the following steps. First, a substrate having a displaying region and a circuit region around the displaying region is provided. Next, a driving array is formed in the displaying region. Subsequently, an electrophoretic display layer is formed on the driving array. Afterwards, a thermal transfer process is performed so that a color filter layer is formed on the electrophoretic display layer. The method can increase the production eligibility rate of the color electrophoretic display device, thereby improving the display quality of the color electrophoretic display device.
摘要翻译：彩色电泳显示装置的制造方法包括以下步骤。首先，提供具有显示区域和显示区域周围的电路区域的基板。接下来，在显示区域中形成驱动阵列。随后，在驱动阵列上形成电泳显示层。之后，进行热转印处理，使得在电泳显示层上形成滤色器层。该方法可以提高彩色电泳显示装置的生产合格率，从而提高彩色电泳显示装置的显示质量。

8. 发明授权

US08791909B2 Display panel 有权
标题翻译：显示面板
公开(公告)号：US08791909B2
公开(公告)日：2014-07-29
申请号：US12853926
申请日：2010-08-10
申请人： Yao-Chou Tsai , Sung-Hui Huang , Po-Wen Hsiao , Ted-Hong Shinn
发明人： Yao-Chou Tsai , Sung-Hui Huang , Po-Wen Hsiao , Ted-Hong Shinn
IPC分类号： G06F3/041 , G06F3/043
CPC分类号： G06F3/0414
摘要： A display panel is provided. The display panel comprises a first substrate, a second substrate, a display control circuit and a force sensing circuit. The display control circuit is disposed on the first substrate between the first substrate and the second substrate for controlling the display panel to display an image through the second substrate. The force sensing circuit is disposed side by side with the display control circuit on the first substrate between the first substrate and second substrate, wherein the force sensing circuit comprises a plurality of force sensing elements for sensing at least one external force and correspondingly generate a plurality of force signals respectively to transform at least one touch signal corresponding to the at least one external force.
摘要翻译：提供显示面板。显示面板包括第一基板，第二基板，显示控制电路和力感测电路。显示控制电路设置在第一基板和第二基板之间，用于控制显示面板通过第二基板显示图像。所述力感测电路与所述第一基板上的所述显示控制电路并排设置在所述第一基板和所述第二基板之间，其中所述力感测电路包括用于感测至少一个外力的多个力传感元件，并相应地产生多个的力信号分别转换与至少一个外力对应的至少一个触摸信号。

9. 发明授权

US08748222B2 Method for forming oxide thin film transistor 有权
标题翻译：氧化物薄膜晶体管的形成方法
公开(公告)号：US08748222B2
公开(公告)日：2014-06-10
申请号：US12774562
申请日：2010-05-05
申请人： Ted-Hong Shinn , Henry Wang , Fang-An Shu , Yao-Chou Tsai
发明人： Ted-Hong Shinn , Henry Wang , Fang-An Shu , Yao-Chou Tsai
IPC分类号： H01L21/00 , H01L29/786 , H01L29/10 , H01L21/34
CPC分类号： H01L29/78693 , H01L21/34 , H01L29/1083 , H01L29/78609
摘要： A method for manufacturing oxide thin film transistors includes steps of: forming a gate, a drain electrode, a source electrode, and an oxide semiconductor layer respectively. The oxide semiconductor layer is formed on the gate electrode; the drain electrode and the source electrode are formed at two opposite sides of the oxide semiconductor layer. The method further includes a step of depositing a dielectric layer of silicon oxide, and a reacting gas for depositing the silicon oxide includes silane and nitrous oxide. A flow rate of nitrous oxide is in a range from 10 to 200 standard cubic centimeters per minute (SCCM). Oxide thin film transistors manufactured by above method has advantages of low leakage, high mobility, and other integrated circuit member can be directly formed on the thin film transistor array substrate of a display device.
摘要翻译：制造氧化物薄膜晶体管的方法包括以下步骤：分别形成栅极，漏极，源电极和氧化物半导体层。氧化物半导体层形成在栅电极上; 漏电极和源电极形成在氧化物半导体层的两个相对侧。该方法还包括沉积氧化硅的介电层的步骤，并且用于沉积氧化硅的反应气体包括硅烷和一氧化二氮。一氧化二氮的流量在10至200标准立方厘米每分钟（SCCM）的范围内。通过上述方法制造的氧化物薄膜晶体管具有漏电流低，迁移率高的优点，其他集成电路元件可以直接形成在显示器件的薄膜晶体管阵列基板上。

10. 发明授权

US08604485B2 Intermediate structure, method and substrate for fabricating flexible display device 有权
标题翻译：用于制造柔性显示装置的中间结构，方法和基板
公开(公告)号：US08604485B2
公开(公告)日：2013-12-10
申请号：US13571477
申请日：2012-08-10
申请人： Wen-Chung Tang , Fang-An Shu , Yao-Chou Tsai , Ted-Hong Shinn
发明人： Wen-Chung Tang , Fang-An Shu , Yao-Chou Tsai , Ted-Hong Shinn
IPC分类号： H01L27/14
CPC分类号： H01L29/78603 , H01L21/187 , H01L27/1218 , H01L27/1266
摘要： An intermediate structure of a flexible display device includes a substrate, an etching layer, a flexible substrate, and a display module. A trench structure is formed in a surface of the substrate. The etching layer is formed on the surface and covers the substrate. The flexible substrate is disposed on the etching layer. The flexible substrate and the substrate are spaced apart from each other by the etching layer. The display module is disposed on the flexible substrate. The flexible substrate can be peeled from the substrate without applying a mechanical force and thus the yield is improved, and the process time and the fabricating cost are also reduced. In addition, the present invention also provides a substrate for fabricating a flexible display device and a method for fabricating a flexible display device.
摘要翻译：柔性显示装置的中间结构包括基板，蚀刻层，柔性基板和显示模块。在基板的表面形成沟槽结构。蚀刻层形成在表面上并覆盖基板。柔性基板设置在蚀刻层上。柔性基板和基板通过蚀刻层彼此间隔开。显示模块设置在柔性基板上。可以在不施加机械力的情况下将柔性基板从基板剥离，从而提高成品率，并且还减少了处理时间和制造成本。此外，本发明还提供了一种用于制造柔性显示装置的基板和用于制造柔性显示装置的方法。

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