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1. 发明授权

US08268659B2 Edge-emitting semiconductor laser chip 有权
标题翻译：边缘发射半导体激光芯片
公开(公告)号：US08268659B2
公开(公告)日：2012-09-18
申请号：US13011326
申请日：2011-01-21
申请人： Christoph Eichler , Volker Härle , Christian Rumbolz , Uwe Strauss
发明人： Christoph Eichler , Volker Härle , Christian Rumbolz , Uwe Strauss
IPC分类号： H01L21/00
CPC分类号： H01S5/0217 , H01S5/0216 , H01S5/2214 , H01S5/2232 , H01S5/3211 , H01S5/32341 , H01S2301/173
摘要： A method for manufacturing an edge emitting semiconductor laser chip, which has a carrier substrate, an interlayer arranged between the carrier substrate and a component structure of the edge emitting semiconductor laser chip. The interlayer is adapted to provide adhesion between the carrier substrate and the component structure. The component structure has an active zone provided for generating radiation.
摘要翻译：一种用于制造边缘发射半导体激光器芯片的方法，其具有载体衬底，布置在载体衬底和边缘发射半导体激光器芯片的部件结构之间的层间隔。中间层适于提供载体基底和部件结构之间的粘附。组件结构具有用于产生辐射的活动区域。

2. 发明授权

US07885306B2 Edge-emitting semiconductor laser chip 有权
标题翻译：边缘发射半导体激光芯片
公开(公告)号：US07885306B2
公开(公告)日：2011-02-08
申请号：US11824877
申请日：2007-07-02
申请人： Christoph Eichler , Volker Härle , Christian Rumbolz , Uwe Strauss
发明人： Christoph Eichler , Volker Härle , Christian Rumbolz , Uwe Strauss
IPC分类号： H01S5/00
CPC分类号： H01S5/0217 , H01S5/0216 , H01S5/2214 , H01S5/2232 , H01S5/3211 , H01S5/32341 , H01S2301/173
摘要： What is specified is an edge emitting semiconductor laser chip comprising a carrier substrate (1), an interlayer (2) promoting adhesion between the carrier substrate (1) and a component structure (50) of the edge emitting semiconductor laser chip, and the component structure (50) comprising an active zone (5) provided for generating radiation.
摘要翻译：指定的是边缘发射半导体激光器芯片，其包括载体衬底（1），促进载体衬底（1）和边缘发射半导体激光器芯片的部件结构（50）之间的粘合的中间层（2）结构（50）包括用于产生辐射的活动区（5）。

3. 发明授权

US08093607B2 Optoelectronic semiconductor component 有权
标题翻译：光电半导体元件
公开(公告)号：US08093607B2
公开(公告)日：2012-01-10
申请号：US12298703
申请日：2007-04-25
申请人： Christoph Eichler , Stephan Miller , Uwe Strauss , Volker Härle , Matthias Sabathil
发明人： Christoph Eichler , Stephan Miller , Uwe Strauss , Volker Härle , Matthias Sabathil
IPC分类号： H01L33/42
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： An optoelectronic semiconductor component, comprising a carrier substrate, and an interlayer that mediates adhesion between the carrier substrate and a component structure. The component structure comprises an active layer provided for generating radiation, and a useful layer arranged between the interlayer and the active layer. The useful layer has a separating area remote from the carrier substrate.
摘要翻译：一种光电子半导体部件，包括载体基板和中间层，其介导载体基板和部件结构之间的粘附。组件结构包括用于产生辐射的有源层和布置在中间层和有源层之间的有用层。有用层具有远离载体基底的分离区域。

4. 发明申请

US20090290610A1 Method for Laterally Cutting Through a Semiconductor Wafer and Optoelectronic Component 有权
标题翻译：用于横向切割半导体晶片和光电元件的方法
公开(公告)号：US20090290610A1
公开(公告)日：2009-11-26
申请号：US11991488
申请日：2006-08-07
申请人： Christoph Eichler , Volker Härle
发明人： Christoph Eichler , Volker Härle
IPC分类号： H01S5/00 , H01L21/30 , H01L33/00
CPC分类号： H01S5/0201 , H01L33/0079 , H01L33/16 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A method for laterally dividing a semiconductor wafer (1) comprises the method steps of: providing a growth substrate (2); epitaxially growing a semiconductor layer sequence (3), which comprises a functional semiconductor layer (5), onto the growth substrate (2); applying a mask layer (10) to partial regions of the semiconductor layer sequence (3) in order to produce masked regions (11) and unmasked regions (12); implanting ions through the unmasked regions (12) in order to produce implantation regions (13) in the semiconductor wafer (1); and dividing the semiconductor wafer (1) along the implantation regions (13), wherein the growth substrate (2) or at least one part of the growth substrate (2) is separated from the semiconductor wafer.
摘要翻译：一种用于横向分割半导体晶片（1）的方法包括以下方法步骤：提供生长衬底（2）; 在生长衬底（2）上外延生长包括功能半导体层（5）的半导体层序列（3）; 将掩模层（10）施加到所述半导体层序列（3）的部分区域以产生掩蔽区域（11）和未屏蔽区域（12）; 通过未掩模区域（12）注入离子，以便在半导体晶片（1）中产生注入区域（13）; 以及沿着所述注入区域（13）划分所述半导体晶片（1），其中所述生长衬底（2）或所述生长衬底（2）的至少一部分与所述半导体晶片分离。

5. 发明申请

US20090309113A1 Optoelectronic Semiconductor Component 有权
标题翻译：光电半导体元件
公开(公告)号：US20090309113A1
公开(公告)日：2009-12-17
申请号：US12298703
申请日：2007-04-25
申请人： Christoph Eichler , Stephan Miller , Uwe Sterauss , Volker Härle , Matthias Sabathil
发明人： Christoph Eichler , Stephan Miller , Uwe Sterauss , Volker Härle , Matthias Sabathil
IPC分类号： H01L33/00
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： An optoelectronic semiconductor component, comprising a carrier substrate, and an interlayer that mediates adhesion between the carrier substrate and a component structure. The component structure comprises an active layer provided for generating radiation, and a useful layer arranged between the interlayer and the active layer. The useful layer has a separating area remote from the carrier substrate.
摘要翻译：一种光电子半导体部件，包括载体基板和中间层，其介导载体基板和部件结构之间的粘附。组件结构包括用于产生辐射的有源层和布置在中间层和有源层之间的有用层。有用层具有远离载体基底的分离区域。

6. 发明授权

US07943484B2 Method for laterally cutting through a semiconductor wafer and optoelectronic component 有权
标题翻译：用于横向切割半导体晶片和光电子部件的方法
公开(公告)号：US07943484B2
公开(公告)日：2011-05-17
申请号：US11991488
申请日：2006-08-07
申请人： Christoph Eichler , Volker Härle
发明人： Christoph Eichler , Volker Härle
IPC分类号： H01L21/30
CPC分类号： H01S5/0201 , H01L33/0079 , H01L33/16 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A method for laterally dividing a semiconductor wafer (1) comprises the method steps of: providing a growth substrate (2); epitaxially growing a semiconductor layer sequence (3), which comprises a functional semiconductor layer (5), onto the growth substrate (2); applying a mask layer (10) to partial regions of the semiconductor layer sequence (3) in order to produce masked regions (11) and unmasked regions (12); implanting ions through the unmasked regions (12) in order to produce implantation regions (13) in the semiconductor wafer (1); and dividing the semiconductor wafer (1) along the implantation regions (13), wherein the growth substrate (2) or at least one part of the growth substrate (2) is separated from the semiconductor wafer.
摘要翻译：一种用于横向分割半导体晶片（1）的方法包括以下方法步骤：提供生长衬底（2）; 在生长衬底（2）上外延生长包括功能半导体层（5）的半导体层序列（3）; 将掩模层（10）施加到所述半导体层序列（3）的部分区域以产生掩蔽区域（11）和未屏蔽区域（12）; 通过未掩模区域（12）注入离子，以便在半导体晶片（1）中产生注入区域（13）; 以及沿着所述注入区域（13）划分所述半导体晶片（1），其中所述生长衬底（2）或所述生长衬底（2）的至少一部分与所述半导体晶片分离。

7. 发明申请

US20120280207A1 Optoelectronic Semiconductor Chip 有权
标题翻译：光电半导体芯片
公开(公告)号：US20120280207A1
公开(公告)日：2012-11-08
申请号：US13546857
申请日：2012-07-11
申请人： Adrian AVRAMESCU , Volker Härle , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss
发明人： Adrian AVRAMESCU , Volker Härle , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss
IPC分类号： H01L33/06
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/2009 , H01S5/3072 , H01S5/3095 , H01S5/3202 , H01S5/3407 , H01L2924/00
摘要： An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.
摘要翻译：光电子半导体芯片包括在半导体芯片（20）的生长方向（c）上的以下区域序列：用于有源区域（2）的有源区（2），适合的有源区（2）用于产生电磁辐射，所述有源区基于六方晶系化合物半导体，以及用于所述有源区（2）的n掺杂阻挡层（3）。还公开了包括这种半导体芯片的部件，以及制造这种半导体芯片的方法。

8. 发明授权

US08138511B2 Radiation-emitting semiconductor component and method for producing the semiconductor component 有权
标题翻译：辐射发射半导体元件及半导体元件的制造方法
公开(公告)号：US08138511B2
公开(公告)日：2012-03-20
申请号：US11567977
申请日：2006-12-07
申请人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Härle , Marianne Ortmann , Uwe Strauss , Johannes Völkl , Ulrich Zehnder
发明人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Härle , Marianne Ortmann , Uwe Strauss , Johannes Völkl , Ulrich Zehnder
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/02 , H01L2224/48091 , H01L2224/48463 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014
摘要： A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.
摘要翻译：辐射发射半导体组件具有改进的辐射效率。半导体部件具有多层结构，其具有用于在多层结构内产生辐射的有源层，以及具有第一和第二主表面的窗口。多层结构邻接窗口的第一主表面。为了提高辐射效率，至少一个凹槽（例如沟槽或凹坑）从第二主表面形成在窗口中。凹部优选地具有朝向第一主表面渐缩的梯形横截面，并且可以例如通过锯入窗口来制造。

9. 发明授权

US07015514B2 Light-emitting diode and method for the production thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US07015514B2
公开(公告)日：2006-03-21
申请号：US10451836
申请日：2002-01-15
申请人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Härle , Ulrich Jacob , Werner Plass , Uwe Strauss , Johannes Völkl , Ulrich Zehnder
发明人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Härle , Ulrich Jacob , Werner Plass , Uwe Strauss , Johannes Völkl , Ulrich Zehnder
IPC分类号： H01L33/00
CPC分类号： H01L33/644 , F21K9/23 , F21V29/70 , F21Y2115/10 , H01L25/0753 , H01L33/483 , H01L33/507 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting diode (1) has a lens body (3) that is fabricated from an inorganic solid. Fastened on the lens body (3) are semiconductor chips (2) that emit light beams (18). Furthermore, the light-emitting diode (1) is provided with a housing (20) that can be screwed into a conventional lamp holder via a thread (21).
摘要翻译：发光二极管（1）具有由无机固体制成的透镜体（3）。在透镜体（3）上固定有发射光束（18）的半导体芯片（2）。此外，发光二极管（1）设置有可经由螺纹（21）拧入常规灯座的壳体（20）。

10. 发明授权

US06897488B2 Radiation-emitting chip 有权
标题翻译：辐射发射芯片
公开(公告)号：US06897488B2
公开(公告)日：2005-05-24
申请号：US10415810
申请日：2001-11-06
申请人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Härle , Ulrich Jacob , Raimund Oberschmid , Werner Plass , Uwe Strauss , Johannes Völkl , Ulrich Zehnder
发明人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Härle , Ulrich Jacob , Raimund Oberschmid , Werner Plass , Uwe Strauss , Johannes Völkl , Ulrich Zehnder
IPC分类号： H01L33/02 , H01L33/08 , H01L33/20 , H01L33/40 , H01L33/00
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/405
摘要： A light-emitting chip (3) has a lens-type coupling-out window (4), whose base area (5) is provided with a mirror area (6). Arranged on a coupling-out area (7) of the coupling-out window (4) is a layer sequence (9), with a photon-emitting pn junction (10). The photons emitted by the pn junction are reflected at the mirror area (6) and can leave the coupling-out window (4) through the coupling-out area (7).
摘要翻译：发光芯片（3）具有透镜型耦合输出窗（4），其基部区域（5）设置有反射镜区域（6）。布置在耦合出窗口（4）的耦合输出区域（7）上的是具有光子发射pn结（10）的层序列（9）。由pn结发射的光子在反射镜区域（6）处被反射，并且可以通过耦合输出区域（7）离开耦合出的窗口（4）。

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