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1. 发明授权

US08682059B2 Harmonic resist model for use in a lithographic apparatus and a device manufacturing method 有权
标题翻译：用于光刻设备的谐波抗蚀剂模型和器件制造方法
公开(公告)号：US08682059B2
公开(公告)日：2014-03-25
申请号：US13896805
申请日：2013-05-17
申请人： Yu Cao , Luoqi Chen , Antoine Jean Bruguier , Wenjin Shao
发明人： Yu Cao , Luoqi Chen , Antoine Jean Bruguier , Wenjin Shao
IPC分类号： G06K9/62
CPC分类号： G06T3/0056 , G03F7/705 , G03F7/70666 , G03F7/70675 , G06T7/0004
摘要： A method for determining an image of a mask pattern in a resist coated on a substrate, the method including determining an aerial image of the mask pattern at substrate level; and convolving the aerial image with at least two orthogonal convolution kernels to determine a resist image that is representative of the mask pattern in the resist.
摘要翻译：一种用于确定涂覆在基板上的抗蚀剂中的掩模图案的图像的方法，所述方法包括：确定掩模图案在基板层面的空间图像; 以及使用至少两个正交卷积内核卷积该空间图像以确定表示抗蚀剂中的掩模图案的抗蚀剂图像。

2. 发明授权

US08447095B2 Harmonic resist model for use in a lithographic apparatus and a device manufacturing method 有权
公开(公告)号：US08447095B2
公开(公告)日：2013-05-21
申请号：US12625079
申请日：2009-11-24
申请人： Yu Cao , Luoqi Chen , Antoine Jean Bruguier , Wenjin Shao
发明人： Yu Cao , Luoqi Chen , Antoine Jean Bruguier , Wenjin Shao
IPC分类号： G06K9/62
CPC分类号： G06T3/0056 , G03F7/705 , G03F7/70666 , G03F7/70675 , G06T7/0004
摘要： A method for determining an image of a mask pattern in a resist coated on a substrate, the method including determining an aerial image of the mask pattern at substrate level; and convolving the aerial image with at least two orthogonal convolution kernels to determine a resist image that is representative of the mask pattern in the resist.

3. 发明申请

US20120005637A9 SMART SELECTION AND/OR WEIGHTING OF PARAMETERS FOR LITHOGRAPHIC PROCESS SIMULATION 有权
标题翻译：智能选择和/或加权参数用于光刻过程模拟
公开(公告)号：US20120005637A9
公开(公告)日：2012-01-05
申请号：US12615004
申请日：2009-11-09
申请人： Yu Cao , Wenjin Shao , Henying Feng , Fel Du , Martin Snajdr
发明人： Yu Cao , Wenjin Shao , Henying Feng , Fel Du , Martin Snajdr
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F7/70666
摘要： The present invention generally relates to simulating a lithographic process, and more particularly to methods for smart selection and smart weighting when selecting parameters and/or kernels used in aerial image computation. According to one aspect, advantages in simulation throughput and/or accuracy can be achieved by selecting TCC kernels more intelligently, allowing highly accurate aerial images to be simulated using a relatively fewer number of TCC kernels than in the state of the art. In other words, the present invention allows for aerial images to be simulated with the same or better accuracy using much less simulation throughput than required in the prior art, all else being equal.
摘要翻译：本发明一般涉及光刻过程的模拟，更具体地说，涉及在选择在空间图像计算中使用的参数和/或内核时智能选择和智能加权的方法。根据一个方面，可以通过更智能地选择TCC核来实现模拟吞吐量和/或精度的优点，从而能够使用比现有技术中相对较少数量的TCC内核来模拟高精度的空间图像。换句话说，本发明允许使用比现有技术中所需要的模拟吞吐量低得多的相同或更好的精度来模拟航空图像，其他所有方面都相同。

4. 发明申请

US20090300573A1 MODEL-BASED PROCESS SIMULATION SYSTEMS AND METHODS 有权
标题翻译：基于模型的过程模拟系统和方法
公开(公告)号：US20090300573A1
公开(公告)日：2009-12-03
申请号：US12475095
申请日：2009-05-29
申请人： Yu Cao , Wenjin Shao , Ronaldus Johannes Gijsbertus Goossens , Jun Ye , James Patrick Koonmen
发明人： Yu Cao , Wenjin Shao , Ronaldus Johannes Gijsbertus Goossens , Jun Ye , James Patrick Koonmen
IPC分类号： G06F17/50
CPC分类号： B29C67/0088 , B29C64/386 , G03F7/70091 , G03F7/70458 , G03F7/705 , G03F7/70516 , G03F7/70525 , G06F17/50 , G06F17/5009 , G06F17/5081
摘要： Systems and methods for process simulation are described. The methods may use a reference model identifying sensitivity of a reference scanner to a set of tunable parameters. Chip fabrication from a chip design may be simulated using the reference model, wherein the chip design is expressed as one or more masks. An iterative retuning and simulation process may be used to optimize critical dimension in the simulated chip and to obtain convergence of the simulated chip with an expected chip. Additionally, a designer may be provided with a set of results from which an updated chip design is created.
摘要翻译：描述了过程仿真的系统和方法。这些方法可以使用标识参考扫描仪对一组可调谐参数的灵敏度的参考模型。可以使用参考模型来模拟来自芯片设计的芯片制造，其中芯片设计被表示为一个或多个掩模。可以使用迭代重调和仿真过程来优化模拟芯片中的关键尺寸，并获得模拟芯片与预期芯片的收敛。此外，可以向设计者提供一组结果，从中创建更新的芯片设计。

5. 发明授权

US08806387B2 Model-based process simulation systems and methods 有权
标题翻译：基于模型的过程仿真系统和方法
公开(公告)号：US08806387B2
公开(公告)日：2014-08-12
申请号：US12475095
申请日：2009-05-29
申请人： Yu Cao , Wenjin Shao , Ronaldus Johannes Gijsbertus Goossens , Jun Ye , James Patrick Koonmen
发明人： Yu Cao , Wenjin Shao , Ronaldus Johannes Gijsbertus Goossens , Jun Ye , James Patrick Koonmen
IPC分类号： G06F17/50
CPC分类号： B29C67/0088 , B29C64/386 , G03F7/70091 , G03F7/70458 , G03F7/705 , G03F7/70516 , G03F7/70525 , G06F17/50 , G06F17/5009 , G06F17/5081
摘要： Systems and methods for process simulation are described. The methods may use a reference model identifying sensitivity of a reference scanner to a set of tunable parameters. Chip fabrication from a chip design may be simulated using the reference model, wherein the chip design is expressed as one or more masks. An iterative retuning and simulation process may be used to optimize critical dimension in the simulated chip and to obtain convergence of the simulated chip with an expected chip. Additionally, a designer may be provided with a set of results from which an updated chip design is created.
摘要翻译：描述了过程仿真的系统和方法。这些方法可以使用标识参考扫描仪对一组可调谐参数的灵敏度的参考模型。可以使用参考模型来模拟来自芯片设计的芯片制造，其中芯片设计被表示为一个或多个掩模。可以使用迭代重调和仿真过程来优化模拟芯片中的关键尺寸，并获得模拟芯片与预期芯片的收敛。此外，可以向设计者提供一组结果，从中创建更新的芯片设计。

6. 发明申请

US20100010784A1 MODEL-BASED SCANNER TUNING SYSTEMS AND METHODS 有权
标题翻译：基于模型的扫描仪调谐系统和方法
公开(公告)号：US20100010784A1
公开(公告)日：2010-01-14
申请号：US12475080
申请日：2009-05-29
申请人： Yu Cao , Wenjin Shao , Ronaldus Johannes,Gljsbertus Goossens , Jun Ye , James Patrick Koonmen
发明人： Yu Cao , Wenjin Shao , Ronaldus Johannes,Gljsbertus Goossens , Jun Ye , James Patrick Koonmen
IPC分类号： G06F17/50
CPC分类号： B29C67/0088 , B29C64/386 , G03F7/70091 , G03F7/70458 , G03F7/705 , G03F7/70516 , G03F7/70525 , G06F17/50 , G06F17/5009 , G06F17/5081
摘要： Systems and methods for tuning photolithographic processes are described. A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relative to the performance of a reference scanner. Differential models may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.
摘要翻译：描述用于调整光刻工艺的系统和方法。保持目标扫描仪的型号，参考一组可调谐参数来定义目标扫描仪的灵敏度。差分模型表示目标扫描器与参考值的偏差。可以基于参考扫描仪和差分模型的设置来调整目标扫描仪。可以相对于参考扫描仪的性能来表征相关扫描仪系列的性能。差分模型可能包括诸如参数偏移和可能用于模拟成像行为差异的其他差异的信息。

7. 发明授权

US08887105B1 Calibration pattern selection based on noise sensitivity 有权
标题翻译：基于噪声敏感度的校准模式选择
公开(公告)号：US08887105B1
公开(公告)日：2014-11-11
申请号：US13662239
申请日：2012-10-26
申请人： Antoine Jean Bruguier , Wenjin Shao , Song Lan
发明人： Antoine Jean Bruguier , Wenjin Shao , Song Lan
IPC分类号： G06F17/50
CPC分类号： G03F1/70 , G03F1/36
摘要： The preset invention provides methods, systems and computer program product for selection of an optimum set of patterns to calibrate a lithography model so that the model can predict imaging performance of a lithography apparatus/system more accurately and reliably without being prohibitively expensive in terms of using computational and metrology resources and time. The method is based on modeling sensitivity of the calibration patterns to measurement noise. In one aspect of the present invention, a method is disclosed, comprising: identifying a model of at least a portion of a lithographic process; identifying a set of patterns for calibrating the model; and, estimating measurement noise associated with the set of patterns.
摘要翻译：本发明提供了用于选择用于校准光刻模型的最佳图案集合的方法，系统和计算机程序产品，使得该模型可以更准确和可靠地预测光刻设备/系统的成像性能，而不会在使用方面过于昂贵计算和计量资源和时间。该方法基于校准模式对测量噪声的建模灵敏度。在本发明的一个方面，公开了一种方法，包括：识别光刻工艺的至少一部分的模型; 识别用于校准模型的一组模式; 并且估计与该组模式相关联的测量噪声。

8. 发明授权

US08694928B2 Pattern selection for lithographic model calibration 有权
标题翻译：光刻模型校准的图案选择
公开(公告)号：US08694928B2
公开(公告)日：2014-04-08
申请号：US12613244
申请日：2009-11-05
申请人： Yu Cao , Wenjin Shao , Jun Ye , Ronaldus Johannes Gljsbertus Goossens
发明人： Yu Cao , Wenjin Shao , Jun Ye , Ronaldus Johannes Gljsbertus Goossens
IPC分类号： G06F17/50
CPC分类号： G06F17/50 , G03F1/14 , G03F1/44 , G03F1/68 , G03F7/70433 , G03F7/705 , G06F17/10 , G06F17/5009
摘要： The present invention relates generally to methods and apparatuses for test pattern selection for computational lithography model calibration. According to some aspects, the pattern selection algorithms of the present invention can be applied to any existing pool of candidate test patterns. According to some aspects, the present invention automatically selects those test patterns that are most effective in determining the optimal model parameter values from an existing pool of candidate test patterns, as opposed to designing optimal patterns. According to additional aspects, the selected set of test patterns according to the invention is able to excite all the known physics and chemistry in the model formulation, making sure that the wafer data for the test patterns can drive the model calibration to the optimal parameter values that realize the upper bound of prediction accuracy imposed by the model formulation.
摘要翻译：本发明一般涉及用于计算光刻模型校准的测试图案选择的方法和装置。根据一些方面，本发明的模式选择算法可以应用于任何现有的候选测试模式池。根据一些方面，与设计最佳图案相反，本发明自动选择从现有的候选测试图案池中确定最佳模型参数值最有效的测试图案。根据另外的方面，根据本发明的所选择的一组测试图案能够激发模型配方中的所有已知物理和化学，确保用于测试图案的晶片数据可以将模型校准驱动到最佳参数值实现了模型公式对预测精度的上限。

9. 发明授权

US08379991B2 Delta TCC for fast sensitivity model computation 有权
标题翻译： Delta TCC用于快速灵敏度模型计算
公开(公告)号：US08379991B2
公开(公告)日：2013-02-19
申请号：US12614180
申请日：2009-11-06
申请人： Yu Cao , Jun Ye , Wenjin Shao , Hua Cao
发明人： Yu Cao , Jun Ye , Wenjin Shao , Hua Cao
IPC分类号： G06K9/68
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/36 , G03F1/70 , G03F7/70483 , G03F7/705 , G03F7/70525 , G03F7/70991 , G06F17/5068
摘要： A method for determining a difference between a reference image and a further image of a pattern, the method including determining a reference imaging function; determining parameters of a difference function representative of a difference between the reference imaging function and a further imaging function; calculating a difference between the reference image and the further image of the pattern based on the difference function and the determined parameters.
摘要翻译：一种用于确定参考图像与图案的另一图像之间的差异的方法，所述方法包括确定参考成像功能; 确定代表参考成像功能和另外的成像功能之间的差异的差分函数的参数; 基于差分函数和确定的参数来计算参考图像和图像的另外图像之间的差。

10. 发明申请

US20110224956A1 Methods and Systems for Parameter-Sensitive and Orthogonal Gauge Design for Lithography Calibration 有权
标题翻译：用于光刻校准的参数敏感和正交仪表设计方法和系统
公开(公告)号：US20110224956A1
公开(公告)日：2011-09-15
申请号：US13128630
申请日：2009-11-10
申请人： Jun Ye , Yu Cao , Hanying Feng , Wenjin Shao
发明人： Jun Ye , Yu Cao , Hanying Feng , Wenjin Shao
IPC分类号： G06F17/50
CPC分类号： G06F17/50 , G03F1/14 , G03F1/44 , G03F1/68 , G03F7/70433 , G03F7/705 , G06F17/10 , G06F17/5009
摘要： Methods according to the present invention provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process, and which minimize degeneracy between model parameters, and thus maximize pattern coverage for parameter calibration. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.
摘要翻译：根据本发明的方法提供用于设计用于校准用于模拟过程中的模型的计量模式的计算有效的技术，并且使模型参数之间的简并性最小化，并且因此使参数校准的模式覆盖最大化。更具体地说，本发明涉及设计规格图案的方法，该图形模式可以用最小数量的量规完成覆盖参数变化，并且在用于对具有多个特征的目标设计进行成像的光刻处理的校准中的对应测量。根据一些方面，根据本发明的方法包括改变模型参数空间的空间（基于CD灵敏度或Delta TCC），然后迭代地识别在该新空间中与现有计量器的CD灵敏度最正交的方向，以及确定最敏感的线宽/间距组合与最佳辅助功能放置，导致在模型参数空间中沿着该方向的最敏感的CD变化。

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