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1. 发明授权

US07902536B2 Memory device and method of making same 有权
标题翻译：存储器件及其制作方法
公开(公告)号：US07902536B2
公开(公告)日：2011-03-08
申请号：US11495927
申请日：2006-07-28
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Sergey Kostylev
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Sergey Kostylev
IPC分类号： H01L29/02 , H01L47/00
CPC分类号： G11C11/5678 , G11C11/56 , G11C13/0004 , H01L45/06 , H01L45/122 , H01L45/143 , H01L45/144 , H01L45/148
摘要： A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a substantially planar first area of electrical communication with the phase-change material. The radial memory device also includes a second electrode in electrical communication with the phase-change material, the second electrode having a second area of electrical communication with the phase-change material, the second area being laterally spacedly disposed from the first area and substantially circumscribing the first area.Further, a method of making a memory device is disclosed. The steps include depositing a first electrode, depositing a first insulator, configuring the first insulator to define a first opening. The first opening provides for a generally planar first contact of the first electrode. The method further including the steps of depositing a phase-change material, depositing a second insulator, configuring the second insulator, depositing a second electrode having a second contact laterally displaced from said first contact, and configuring said second electrode.
摘要翻译：径向存储器件包括相变材料，与相变材料电连通的第一电极，第一电极具有与相变材料电连通的基本平坦的第一区域。所述径向存储装置还包括与所述相变材料电连通的第二电极，所述第二电极具有与所述相变材料电连通的第二区域，所述第二区域与所述第一区域横向间隔设置并且基本上限定第一个区域。此外，公开了一种制造存储器件的方法。这些步骤包括沉积第一电极，沉积第一绝缘体，构成第一绝缘体以限定第一开口。第一开口提供第一电极的大致平面的第一接触。该方法还包括以下步骤：沉积相变材料，沉积第二绝缘体，构成第二绝缘体，沉积具有从所述第一触点横向移位的第二触点的第二电极，以及配置所述第二电极。

2. 发明申请

US20080023685A1 MEMORY DEVICE AND METHOD OF MAKING SAME 审中-公开
标题翻译：存储器件及其制造方法
公开(公告)号：US20080023685A1
公开(公告)日：2008-01-31
申请号：US11743459
申请日：2007-05-02
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Sergey Kostylev , Regino Sandoval
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Sergey Kostylev , Regino Sandoval
IPC分类号： H01L47/00
CPC分类号： H01L45/148 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/1246 , H01L45/143 , H01L45/144
摘要： A memory device includes a phase-change material and a first electrode in electrical communication with the phase-change material. Also included is a second electrode in electrical communication with the phase-change material and a dielectric layer. The dielectric layer is disposed between the first electrode and the second electrode. The dielectric layer has an opening therethrough. The phase-change material is disposed on both sides of the dielectric layer and within the opening. Electrical communication within the device is by means of virtual contacts.
摘要翻译：存储器件包括相变材料和与相变材料电连通的第一电极。还包括与相变材料和介电层电连通的第二电极。介电层设置在第一电极和第二电极之间。电介质层具有通过其的开口。相变材料设置在电介质层的两侧和开口内。设备内的电气通信是通过虚拟接触。

3. 发明申请

US20090298222A1 Method for manufacturing Chalcogenide devices 审中-公开
标题翻译：制造硫族化物装置的方法
公开(公告)号：US20090298222A1
公开(公告)日：2009-12-03
申请号：US12154952
申请日：2008-05-28
申请人： Tyler Lowrey , Jeff Fournier , Robert Nuss , Carl Schell , Guy Wicker , Jim Ricker , James Reed , Ed Spall , Sergey Kostylev , Wolodymyr Czubatyj , Regino Sandoval
发明人： Tyler Lowrey , Jeff Fournier , Robert Nuss , Carl Schell , Guy Wicker , Jim Ricker , James Reed , Ed Spall , Sergey Kostylev , Wolodymyr Czubatyj , Regino Sandoval
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/04 , H01L45/144 , H01L45/1608
摘要： A method of chalcogenide device formation includes treatment of the surface upon which the chalcogenide material is deposited. The treatment reduces or eliminates native oxides and other contaminants from the surface, thereby increasing the adhesion of the chalcogenide layer to the treated surface, eliminating voids between the chalcogenide layer and deposition surface and reducing the degradation of chalcogenide material due to the migration of contaminants into the chalcogenide.
摘要翻译：硫族化物器件形成的方法包括处理沉积硫族化物材料的表面。该处理减少或消除了表面的天然氧化物和其他污染物，从而增加了硫属化物层与处理过的表面的粘附性，消除了硫属化物层与沉积表面之间的空隙，并且由于污染物的迁移而降低了硫族化物材料的降解硫族化物。

4. 发明申请

US20070034850A1 Chalcogenide devices incorporating chalcogenide materials having reduced germanium or telluruim content 审中-公开
标题翻译：含有具有降低的锗或碲化物含量的硫族化物材料的硫族化物装置
公开(公告)号：US20070034850A1
公开(公告)日：2007-02-15
申请号：US11200466
申请日：2005-08-09
申请人： Sergey Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
发明人： Sergey Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A chalcogenide material and chalcogenide memory device having less stringent requirements for formation, improved thermal stability and/or faster operation. The chalcogenide materials include materials comprising Ge, Sb and Te in which the Ge and/or Te content is lean relative to the commonly used Ge2Sb2Te5 chalcogenide composition. Electrical devices containing the instant chalcogenide materials show a rapid convergence of the set resistance during cycles of setting and resetting the device from its as-fabricated state, thus leading to a reduced or eliminated need to subject the device to post-fabrication electrical formation prior to end-use operation. Improved thermal stability is manifested in terms of prolonged stability of the resistance of the device at elevated temperatures, which leads to an inhibition of thermally induced setting of the reset state in the device. Significant improvements in the 10 year data retention temperature are demonstrated. Faster device operation is achieved through an increased speed of crystallization, which acts to shorten the time required to transform the chalcogenide material from its reset state to its set state in an electrical memory device.
摘要翻译：一种硫族化物材料和硫族化物记忆装置，其对形成，改进的热稳定性和/或更快的操作要求不太严格。硫属化物材料包括Ge，Sb和Te的材料，其中Ge和/或Te含量相对于通常使用的Ge 2 Sb 2 Te 5是稀的硫族化合物组合物。包含瞬时硫族化物材料的电气装置显示设定循环期间的设定电阻的快速收敛以及将器件从其制造状态复位，从而导致减少或消除了将器件置于后制造电形成之前最终使用操作。改进的热稳定性表现在器件在升高的温度下的电阻的延长的稳定性，这导致抑制器件中复位状态的热诱导设置。展示了10年数据保存温度的显着改进。通过提高结晶速度实现更快的器件操作，其用于缩短将硫族化物材料从其复位状态转换到其在电存储器件中的设定状态所需的时间。

5. 发明申请

US20070034849A1 Multi-layer chalcogenide devices 有权
标题翻译：多层硫属化物装置
公开(公告)号：US20070034849A1
公开(公告)日：2007-02-15
申请号：US11451913
申请日：2006-06-13
申请人： Regino Sandoval , Sergey Kostylev , Wolodymyr Czubatyj , Tyler Lowrey
发明人： Regino Sandoval , Sergey Kostylev , Wolodymyr Czubatyj , Tyler Lowrey
IPC分类号： H01L29/02
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A multi-layer chalcogenide electronic device. The device includes an active region in electrical communication with two terminals, where the active region includes two or more layers. In one embodiment, the pore region includes two or more chalcogenide materials which differ in chemical composition. In another embodiment, the pore region includes one or more chalcogenide materials and a layer of Sb. The devices offer the advantages of minimal conditioning requirements, fast set speeds, high reset resistances and low set resistances.
摘要翻译：多层硫族化物电子器件。该器件包括与两个端子电连通的有源区域，其中有源区域包括两层或更多层。在一个实施方案中，孔区域包括化学组成不同的两种或更多种硫族化物材料。在另一个实施方案中，孔区包括一种或多种硫族化物材料和一层Sb。该器件具有最小的调理要求，快速设定速度，高复位电阻和低设定电阻的优点。

6. 发明申请

US20060110846A1 Electrically programmable memory element with improved contacts 审中-公开
标题翻译：具有改进触点的电可编程存储元件
公开(公告)号：US20060110846A1
公开(公告)日：2006-05-25
申请号：US11287833
申请日：2005-11-28
申请人： Tyler Lowrey , Stanford Ovshinsky , Guy Wicker , Patrick Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey Kostylev
发明人： Tyler Lowrey , Stanford Ovshinsky , Guy Wicker , Patrick Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey Kostylev
IPC分类号： H01L21/00
CPC分类号： G11C11/5678 , G11C11/56 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16 , H01L45/1675
摘要： A method of making an electrically programmable memory element, comprising: providing a conductive sidewall spacer; and forming a phase-change material in electrical communication with said conductive sidewall spacer.
摘要翻译：一种制造电可编程存储元件的方法，包括：提供导电侧壁间隔物; 以及形成与所述导电侧壁间隔物电连通的相变材料。

7. 发明申请

US20090095951A1 Memory Device With Low Reset Current 有权
标题翻译：具有低复位电流的存储器件
公开(公告)号：US20090095951A1
公开(公告)日：2009-04-16
申请号：US11871761
申请日：2007-10-12
申请人： Sergey Kostylev , Tyler Lowrey , Wolodymyr Czubatyj
发明人： Sergey Kostylev , Tyler Lowrey , Wolodymyr Czubatyj
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/1253 , H01L45/1293 , H01L45/141 , H01L45/143 , H01L45/148 , H01L45/1675 , H01L45/1691
摘要： An electronic device includes a first electrode and a second electrode. The device also includes a resistive material between the first and second electrodes. An active material is between the first electrode and the resistive material. The active material is in electrical communication with the first electrode and the active material is in electrical communication with the second electrode through the resistive layer.
摘要翻译：电子设备包括第一电极和第二电极。该装置还包括在第一和第二电极之间的电阻材料。活性材料在第一电极和电阻材料之间。活性材料与第一电极电连通，并且活性材料通过电阻层与第二电极电连通。

8. 发明申请

US20080035907A1 Composite Chalcogenide Materials and Devices 有权
标题翻译：复合硫族化物材料和器件
公开(公告)号：US20080035907A1
公开(公告)日：2008-02-14
申请号：US11874719
申请日：2007-10-18
申请人： Wolodymyr Czubatyj , Sergey Kostylev , Tyler Lowrey
发明人： Wolodymyr Czubatyj , Sergey Kostylev , Tyler Lowrey
IPC分类号： H01L45/00
CPC分类号： H01L45/144 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/143
摘要： An electrical device includes a composite switching material. The composite switching material includes an electrically switchable component and a non-switchable component. In one embodiment, the composite switching material includes a heterogeneous mixture of at least one chalcogenide material and at least one dielectric material. The composite switching material is disposed between two electrodes and the switchable component is transformable from a resistive state to a conductive state upon application of a voltage between the two electrodes, without changing phase.
摘要翻译：电气装置包括复合开关材料。复合开关材料包括可电切换部件和不可切换部件。在一个实施例中，复合开关材料包括至少一种硫族化物材料和至少一种电介质材料的非均相混合物。复合开关材料设置在两个电极之间，并且在不改变相位的情况下施加电压之间，可切换部件可从电阻状态转换为导通状态。

9. 发明申请

US20070034851A1 Chalcogenide devices and materials having reduced germanium or telluruim content 有权
标题翻译：硫族化物装置和具有降低的锗或碲化物含量的材料
公开(公告)号：US20070034851A1
公开(公告)日：2007-02-15
申请号：US11301211
申请日：2005-12-12
申请人： Sergey Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
发明人： Sergey Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A chalcogenide material and chalcogenide memory device exhibiting fast operation (short set pulse times) over an extended range of reset state resistances. Electrical devices containing the instant chalcogenide materials permit rapid transformations from the reset state to the set state for reset and set states having a high resistance ratio. The instant devices thus provide for high resistance contrast and improved readability of memory states while preserving fast operational speeds for the device. The chalcogenide materials include materials comprising Ge, Sb and Te in which the Ge and/or Te content is lean relative to the commonly used Ge2Sb2Te5 chalcogenide composition. In one embodiment, the atomic concentration of Ge is between 11% and 22%, the atomic concentration of Sb is between 22% and 65%, and the atomic concentration of Te is between 28% and 55%. In a preferred embodiment, the atomic concentration of Ge is between 15% and 18%, the atomic concentration of Sb is between 32% and 35%, and the atomic concentration of Te is between 48% and 51%.
摘要翻译：硫化物材料和硫族化物存储器件在复位状态电阻的延长范围内表现出快速操作（短脉冲时间）。包含瞬时硫族化物材料的电气装置允许从复位状态到设定状态的快速转换以及具有高电阻比的置位状态。因此，即时设备提供高电阻对比度和改善存储器状态的可读性，同时保持设备的快速操作速度。硫属化物材料包括Ge，Sb和Te的材料，其中Ge和/或Te含量相对于通常使用的Ge 2 Sb 2 Te 5是稀的硫族化合物组合物。在一个实施方案中，Ge的原子浓度为11％至22％，Sb的原子浓度为22％至65％，Te的原子浓度为28％至55％。在优选的实施方式中，Ge的原子浓度为15％〜18％，Sb的原子浓度为32％〜35％，Te的原子浓度为48％〜51％。

10. 发明申请

US20060077705A1 Methods of accelerated life testing of programmable resistance memory elements 失效
标题翻译：可编程电阻存储元件加速寿命测试方法
公开(公告)号：US20060077705A1
公开(公告)日：2006-04-13
申请号：US10960263
申请日：2004-10-07
申请人： Sergey Kostylev , Tyler Lowrey , Wolodymyr Czubatyj
发明人： Sergey Kostylev , Tyler Lowrey , Wolodymyr Czubatyj
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C29/50 , G11C2013/0078 , G11C2013/0092
摘要： A method of testing a programmable resistance memory element. The method comprises applying a plurality of reset pulses to the memory element. Each of the reset pulses having an energy which is greater than the minimum energy needed program the memory element from its set state to its reset state.
摘要翻译：一种测试可编程电阻存储元件的方法。该方法包括将多个复位脉冲施加到存储元件。具有大于所需最小能量的能量的每个复位脉冲将存储器元件从其设置状态编程到其复位状态。

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