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    • 1. 发明授权
    • Controlling angle of incidence of multiple-beam optical metrology tools
    • 控制多光束光学测量工具的入射角
    • US08030632B2
    • 2011-10-04
    • US12414637
    • 2009-03-30
    • Adam NortonXinkang Tian
    • Adam NortonXinkang Tian
    • G01J4/00
    • G01J1/02G01J1/0242G01J1/04G01J1/0411G01J1/0414G01J1/08G01N21/4788
    • Provided is a method of controlling multiple beams directed to a structure in a workpiece, the method comprising generating a first illumination beam with a first light source and a second illumination beam with a second light source, projecting the first and second illumination beams onto a separate illumination secondary mirror, reflecting the first and second illumination beams onto an illumination primary mirror, the reflected first and second illumination beams projected onto the structure at a first and second angle of incidence respectively, the reflected first and second illumination beams generating a first and second detection beams respectively. The separate illumination secondary mirror is positioned relative to the illumination primary mirror so as make the first angle of incidence substantially the same or close to a calculated optimum first angle of incidence and make the second angle of incidence substantially the same or close to a calculated optimum second angle of incidence. The first and second detection beams are diffracted off the structure at the corresponding angle of incidence to a detection primary mirror, reflected onto a separate secondary detection mirror and other optical components on the detection path, and onto spectroscopic detectors.
    • 提供了一种控制指向工件中的结构的多个光束的方法,该方法包括利用第一光源生成具有第一光源的第一照明光束和具有第二光源的第二照明光束,将第一和第二照明光束投射到单独的 分别将第一和第二照明光束反射到照明主反射镜上,反射的第一和第二照明光束分别以第一和第二入射角投射到结构上,反射的第一和第二照明光束产生第一和第二照明光束 检测光束。 分离的照明次级反射镜相对于照明主反射镜定位,使得第一入射角基本上相同或接近于计算出的最佳第一入射角,并使第二入射角基本上相同或接近于计算的最佳 第二个入射角。 第一和第二检测光束以与检测主反射镜相对应的入射角度从结构衍射,反射到检测路径上的单独的次级检测镜和其它光学部件上,并被分布在光谱检测器上。
    • 5. 发明授权
    • Etch stage measurement system
    • 蚀刻阶段测量系统
    • US08173451B1
    • 2012-05-08
    • US13028960
    • 2011-02-16
    • Xinkang TianManuel Madriaga
    • Xinkang TianManuel Madriaga
    • G01R31/26H01L21/66C23F1/00
    • H01J37/32963H01J37/32917
    • Provided is a system for measuring an etch stage of an etch process involving one or more layers in a substrate, the etch stage measurement system configured to meet two or more etch stage measurement objectives. The system includes an etch process tool, the etch process tool having an etch chamber, a controller, and process parameters. The etch process tool is coupled to two or more optical metrology devices and at least one etch sensor device measuring an etch process parameter with high correlation to the etch stage. The processor is coupled to the etch process tool and is configured to extract an etch measurement value using a correlation of etch stage measurements to actual etch stage data and etch stage measurement obtained from the two or more metrology devices and the at least one etch process sensor device.
    • 提供了一种用于测量涉及衬底中的一个或多个层的蚀刻工艺的蚀刻阶段的系统,所述蚀刻阶段测量系统被配置为满足两个或更多个蚀刻阶段测量目标。 该系统包括蚀刻工艺工具,蚀刻工具具有蚀刻室,控制器和工艺参数。 蚀刻工艺工具耦合到两个或更多个光学测量装置和至少一个蚀刻传感器装置,其测量与蚀刻阶段高度相关的蚀刻工艺参数。 处理器耦合到蚀刻工艺工具,并且被配置为使用蚀刻阶段测量与实际蚀刻阶段数据的相关性和从两个或更多个测量装置获得的蚀刻阶段测量和至少一个蚀刻工艺传感器来提取蚀刻测量值 设备。
    • 6. 发明授权
    • Method of designing an etch stage measurement system
    • 蚀刻台测量系统的设计方法
    • US08173450B1
    • 2012-05-08
    • US13027227
    • 2011-02-14
    • Xinkang TianManuel Madriaga
    • Xinkang TianManuel Madriaga
    • H01L21/00H01L21/66H01L21/302G01R31/26
    • H01L21/67069H01J37/32935H01L21/67253
    • Provided is a method for designing an etch stage measurement system involving an etch process for one or more layers on a substrate using an etch process tool. The etch process tool uses two or more metrology devices, at least one etch process sensor device, and a metrology processor, the etch stage measurement system configured to meet two or more etch stage measurement objectives. A correlation algorithm using the etch stage measurements to the actual etch stage data is developed and used to extract etch measurement value. If the set two or more etch stage measurement objectives are not met, the optical metrology devices are modified, a different etch process sensor device is selected, the correlation algorithm is refined, and/or the measurement data is enhanced by adjusting for noise.
    • 提供了一种用于使用蚀刻处理工具设计涉及用于衬底上的一个或多个层的蚀刻工艺的蚀刻阶段测量系统的方法。 蚀刻工艺工具使用两个或更多个测量装置,至少一个蚀刻工艺传感器装置和计量处理器,该蚀刻阶段测量系统配置成满足两个或更多个蚀刻阶段测量目标。 开发了使用蚀刻阶段测量到实际蚀刻阶段数据的相关算法,并用于提取蚀刻测量值。 如果不满足设定的两个或多个蚀刻阶段测量目标,则修改光学测量装置,选择不同的蚀刻工艺传感器装置,相关算法被精炼,和/或通过调整噪声来增强测量数据。