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1. 发明授权

US07742889B2 Designing an optical metrology system optimized with signal criteria 失效
标题翻译：设计采用信号标准优化的光学计量系统
公开(公告)号：US07742889B2
公开(公告)日：2010-06-22
申请号：US12057316
申请日：2008-03-27
申请人： Xinkang Tian , Manuel Madriaga , Ching-Ling Meng , Mihail Mihalov
发明人： Xinkang Tian , Manuel Madriaga , Ching-Ling Meng , Mihail Mihalov
IPC分类号： G06F19/00 , G01B11/24 , H01L21/66
CPC分类号： G01N21/956 , G01B2210/56
摘要： Provided is a method of designing an optical metrology system for measuring structures on a workpiece wherein the optical metrology system is configured to meet one or more signal criteria. The design of the optical metrology system is optimized by using collected signal data in comparison to the one or more signal criteria. In one embodiment, the optical metrology system is used for stand alone systems. In another embodiment, the optical metrology system is integrated with a fabrication cluster in semiconductor manufacturing.
摘要翻译：提供了一种设计用于测量工件上的结构的光学测量系统的方法，其中光学测量系统被配置为满足一个或多个信号标准。通过使用收集的信号数据与一个或多个信号标准相比较来优化光学测量系统的设计。在一个实施例中，光学测量系统用于独立系统。在另一个实施例中，光学计量系统与半导体制造中的制造集成集成。

2. 发明授权

US07734437B2 Apparatus for designing an optical metrology system optimized with signal criteria 失效
标题翻译：用于设计用信号标准优化的光学测量系统的装置
公开(公告)号：US07734437B2
公开(公告)日：2010-06-08
申请号：US12057332
申请日：2008-03-27
申请人： Xinkang Tian , Manuel Madriaga , Ching-Ling Meng , Mihail Mihalov
发明人： Xinkang Tian , Manuel Madriaga , Ching-Ling Meng , Mihail Mihalov
IPC分类号： G06F19/00 , G01B11/14
CPC分类号： G01B11/24 , G01B2210/56 , G01N21/956
摘要： Provided is an apparatus for designing an optical metrology system for measuring structures on a workpiece wherein the optical metrology system is configured to meet one or more signal criteria. The design of the optical metrology system is optimized by using collected signal data in comparison to set one or more signal criteria. In one embodiment, the optical metrology system is used for stand alone systems. In another embodiment, the optical metrology system is integrated with a fabrication cluster in semiconductor manufacturing.
摘要翻译：提供了一种用于设计用于测量工件上的结构的光学测量系统的设备，其中光学测量系统被配置为满足一个或多个信号标准。通过使用收集的信号数据来比较设置一个或多个信号标准来优化光学测量系统的设计。在一个实施例中，光学测量系统用于独立系统。在另一个实施例中，光学计量系统与半导体制造中的制造集成集成。

3. 发明授权

US07589845B1 Process control using an optical metrology system optimized with signal criteria 失效
标题翻译：使用信号标准优化的光学测量系统进行过程控制
公开(公告)号：US07589845B1
公开(公告)日：2009-09-15
申请号：US12057346
申请日：2008-03-27
申请人： Xinkang Tian , Manuel Madriaga , Ching-Ling Meng , Mihail Mihalov
发明人： Xinkang Tian , Manuel Madriaga , Ching-Ling Meng , Mihail Mihalov
IPC分类号： G01B11/02 , G01B11/24 , G06F19/00
CPC分类号： G01B11/02 , G01B11/24 , G03F7/70625
摘要： Provided is system and method for controlling a fabrication cluster using at least one parameter of a structure measured with an optical metrology system designed and configured to meet one or more signal criteria. The design of the optical metrology system is optimized by using collected signal data in comparison to set one or more signal criteria. In one embodiment, the optical metrology system is used for standalone systems. In another embodiment, the optical metrology system is integrated with a fabrication cluster in semiconductor manufacturing. At least one parameter determined from a signal measured using the optical metrology system is transmitted to a fabrication cluster. The at least one parameter is used to modify at least one process variable or equipment setting of the fabrication cluster.
摘要翻译：提供了用于使用被设计和配置为满足一个或多个信号标准的光学测量系统测量的结构的至少一个参数来控制制造集群的系统和方法。通过使用收集的信号数据来比较设置一个或多个信号标准来优化光学测量系统的设计。在一个实施例中，光学测量系统用于独立系统。在另一个实施例中，光学计量系统与半导体制造中的制造集成集成。从使用光学测量系统测量的信号确定的至少一个参数被传送到制造集群。至少一个参数用于修改制造集群的至少一个过程变量或设备设置。

4. 发明授权

US07761250B2 Optical metrology system optimized with design goals 失效
标题翻译：光学计量系统优化设计目标
公开(公告)号：US07761250B2
公开(公告)日：2010-07-20
申请号：US12141754
申请日：2008-06-18
申请人： Xinkang Tian , Manuel Madriaga , Ching-Ling Meng , Mihail Mihaylov
发明人： Xinkang Tian , Manuel Madriaga , Ching-Ling Meng , Mihail Mihaylov
IPC分类号： G01N37/00
CPC分类号： G01B11/24 , G01B21/042
摘要： Provided is a method of designing an optical metrology system for measuring structures on a workpiece where the optical metrology system is configured to meet two or more design goals. The design of the optical metrology system is optimized by using collected design goal data in comparison to the set two or more design goals. In one embodiment, the optical metrology system is used for stand alone metrology systems. In another embodiment, the optical metrology system is integrated with a fabrication cluster in semiconductor manufacturing.
摘要翻译：提供了一种设计用于测量工件上的结构的光学测量系统的方法，其中光学测量系统被配置为满足两个或更多个设计目标。与设定的两个或多个设计目标相比，通过使用收集的设计目标数据来优化光学测量系统的设计。在一个实施例中，光学测量系统用于独立测量系统。在另一个实施例中，光学计量系统与半导体制造中的制造集成集成。

5. 发明授权

US07761178B2 Automated process control using an optical metrology system optimized with design goals 失效
标题翻译：使用优化设计目标的光学计量系统进行自动化过程控制
公开(公告)号：US07761178B2
公开(公告)日：2010-07-20
申请号：US12141892
申请日：2008-06-18
申请人： Xinkang Tian , Manuel Madriaga , Ching-Ling Meng , Mihail Mihaylov
发明人： Xinkang Tian , Manuel Madriaga , Ching-Ling Meng , Mihail Mihaylov
IPC分类号： G06F19/00 , G01N21/00
CPC分类号： G01N21/9501 , G01N21/8806 , G01N2021/8416 , G03F1/84 , G03F7/705 , G03F7/70625 , H01L22/12
摘要： Provided is a method of designing an optical metrology system for measuring structures on a workpiece wherein the optical metrology system is configured to meet a plurality of design goals. The design of the optical metrology system is optimized by using collected design goal data in comparison to the set plurality of design goals. In one embodiment, the optical metrology system is used for stand alone metrology systems. In another embodiment, the optical metrology system is integrated with a fabrication cluster in semiconductor manufacturing. At least one parameter determined from a diffraction signal measured using the optical metrology system is transmitted to the fabrication cluster. The at least one parameter is used to modify at least one process variable or equipment setting of the fabrication cluster.
摘要翻译：提供了一种设计用于测量工件上的结构的光学测量系统的方法，其中光学测量系统被配置为满足多个设计目标。与设定的多个设计目标相比，通过使用收集的设计目标数据优化光学测量系统的设计。在一个实施例中，光学测量系统用于独立测量系统。在另一个实施例中，光学计量系统与半导体制造中的制造集成集成。从使用光学测量系统测量的衍射信号确定的至少一个参数被传送到制造集群。至少一个参数用于修改制造集群的至少一个过程变量或设备设置。

6. 发明授权

US07595869B1 Optical metrology system optimized with a plurality of design goals 失效
标题翻译：光学计量系统用多个设计目标优化
公开(公告)号：US07595869B1
公开(公告)日：2009-09-29
申请号：US12141867
申请日：2008-06-18
申请人： Xinkang Tian , Manuel Madriaga , Ching-Ling Meng , Mihail Mihaylov
发明人： Xinkang Tian , Manuel Madriaga , Ching-Ling Meng , Mihail Mihaylov
IPC分类号： G01N21/00
CPC分类号： G01N21/95607 , G01N21/4788 , G01N21/9501 , G01N2021/95615 , G03F7/70625
摘要： Provided is a method of designing an optical metrology system for measuring structures on a workpiece where the optical metrology system is configured to meet a plurality of design goals. Primary components of the optical metrology system affecting the design goals are determined and used in the initial design. The design of the optical metrology system is optimized by using collected design goal data in comparison to the set plurality of design goals. In one embodiment, the optical metrology system is used for stand alone metrology systems. In another embodiment, the optical metrology system is integrated with a fabrication cluster in semiconductor manufacturing.
摘要翻译：提供了一种设计用于测量工件上的结构的光学测量系统的方法，其中光学测量系统被配置为满足多个设计目标。影响设计目标的光学计量系统的主要组件在初始设计中得到确定和使用。与设定的多个设计目标相比，通过使用收集的设计目标数据优化光学测量系统的设计。在一个实施例中，光学测量系统用于独立测量系统。在另一个实施例中，光学计量系统与半导体制造中的制造集成集成。

7. 发明授权

US08173451B1 Etch stage measurement system 有权
标题翻译：蚀刻阶段测量系统
公开(公告)号：US08173451B1
公开(公告)日：2012-05-08
申请号：US13028960
申请日：2011-02-16
申请人： Xinkang Tian , Manuel Madriaga
发明人： Xinkang Tian , Manuel Madriaga
IPC分类号： G01R31/26 , H01L21/66 , C23F1/00
CPC分类号： H01J37/32963 , H01J37/32917
摘要： Provided is a system for measuring an etch stage of an etch process involving one or more layers in a substrate, the etch stage measurement system configured to meet two or more etch stage measurement objectives. The system includes an etch process tool, the etch process tool having an etch chamber, a controller, and process parameters. The etch process tool is coupled to two or more optical metrology devices and at least one etch sensor device measuring an etch process parameter with high correlation to the etch stage. The processor is coupled to the etch process tool and is configured to extract an etch measurement value using a correlation of etch stage measurements to actual etch stage data and etch stage measurement obtained from the two or more metrology devices and the at least one etch process sensor device.
摘要翻译：提供了一种用于测量涉及衬底中的一个或多个层的蚀刻工艺的蚀刻阶段的系统，所述蚀刻阶段测量系统被配置为满足两个或更多个蚀刻阶段测量目标。该系统包括蚀刻工艺工具，蚀刻工具具有蚀刻室，控制器和工艺参数。蚀刻工艺工具耦合到两个或更多个光学测量装置和至少一个蚀刻传感器装置，其测量与蚀刻阶段高度相关的蚀刻工艺参数。处理器耦合到蚀刻工艺工具，并且被配置为使用蚀刻阶段测量与实际蚀刻阶段数据的相关性和从两个或更多个测量装置获得的蚀刻阶段测量和至少一个蚀刻工艺传感器来提取蚀刻测量值设备。

8. 发明授权

US08173450B1 Method of designing an etch stage measurement system 有权
标题翻译：蚀刻台测量系统的设计方法
公开(公告)号：US08173450B1
公开(公告)日：2012-05-08
申请号：US13027227
申请日：2011-02-14
申请人： Xinkang Tian , Manuel Madriaga
发明人： Xinkang Tian , Manuel Madriaga
IPC分类号： H01L21/00 , H01L21/66 , H01L21/302 , G01R31/26
CPC分类号： H01L21/67069 , H01J37/32935 , H01L21/67253
摘要： Provided is a method for designing an etch stage measurement system involving an etch process for one or more layers on a substrate using an etch process tool. The etch process tool uses two or more metrology devices, at least one etch process sensor device, and a metrology processor, the etch stage measurement system configured to meet two or more etch stage measurement objectives. A correlation algorithm using the etch stage measurements to the actual etch stage data is developed and used to extract etch measurement value. If the set two or more etch stage measurement objectives are not met, the optical metrology devices are modified, a different etch process sensor device is selected, the correlation algorithm is refined, and/or the measurement data is enhanced by adjusting for noise.
摘要翻译：提供了一种用于使用蚀刻处理工具设计涉及用于衬底上的一个或多个层的蚀刻工艺的蚀刻阶段测量系统的方法。蚀刻工艺工具使用两个或更多个测量装置，至少一个蚀刻工艺传感器装置和计量处理器，该蚀刻阶段测量系统配置成满足两个或更多个蚀刻阶段测量目标。开发了使用蚀刻阶段测量到实际蚀刻阶段数据的相关算法，并用于提取蚀刻测量值。如果不满足设定的两个或多个蚀刻阶段测量目标，则修改光学测量装置，选择不同的蚀刻工艺传感器装置，相关算法被精炼，和/或通过调整噪声来增强测量数据。

9. 发明授权

US07660696B1 Apparatus for auto focusing a workpiece using two or more focus parameters 有权
标题翻译：用于使用两个或多个聚焦参数自动对焦工件的设备
公开(公告)号：US07660696B1
公开(公告)日：2010-02-09
申请号：US12248015
申请日：2008-10-08
申请人： Adam Norton , Xinkang Tian , Manuel Madriaga
发明人： Adam Norton , Xinkang Tian , Manuel Madriaga
IPC分类号： G06F19/00 , G01N21/00 , H01L21/66
CPC分类号： G01N21/956 , G01N21/9501 , G02B5/18 , G02B27/40
摘要： Provided is an apparatus for auto focusing a workpiece for optical metrology measurements using an optical metrology system. The auto focusing subsystem includes a focus detector having a tilt angle, a capture range, and a plurality of sensors. A processor coupled to the focus detector is configured to utilize the plurality of focus signals measured using the focus detector to determine two or more focus parameters. The two or more focus parameters and calibration data are used to determine an initial position of the workpiece and to generate instructions to move the workpiece to a best focus position. A diffraction signal is measured off a structure on the workpiece using the optical metrology system to determine at least one profile parameter of the structure. The at least one profile parameter is used to modify at least one process variable or equipment setting of a semiconductor fabrication cluster.
摘要翻译：提供了一种用于使用光学测量系统自动聚焦工件用于光学测量测量的装置。自动聚焦子系统包括具有倾斜角度，捕获范围和多个传感器的聚焦检测器。耦合到焦点检测器的处理器被配置为利用使用焦点检测器测量的多个聚焦信号来确定两个或更多个聚焦参数。使用两个或更多个焦点参数和校准数据来确定工件的初始位置并产生用于将工件移动到最佳对焦位置的指令。使用光学测量系统从工件上的结构测量衍射信号，以确定结构的至少一个轮廓参数。所述至少一个轮廓参数用于修改半导体制造集群的至少一个过程变量或设备设置。

10. 发明授权

US08193007B1 Etch process control using optical metrology and sensor devices 有权
标题翻译：使用光学测量和传感器设备进行蚀刻过程控制
公开(公告)号：US08193007B1
公开(公告)日：2012-06-05
申请号：US13029349
申请日：2011-02-17
申请人： Manuel Madriaga , Xinkang Tian
发明人： Manuel Madriaga , Xinkang Tian
IPC分类号： H01L21/00 , H01L21/66 , H01L21/461 , G01R31/26
CPC分类号： H01L21/67069 , H01J37/32935 , H01L21/67253 , H01L21/67276 , H01L22/12 , H01L22/20
摘要： Provided is a method and system for controlling a fabrication cluster for processing of a substrate in an etch process, the fabrication cluster having equipment settings and process parameters. A correlation of etch stage measurements to actual etch stage data is developed, the etch stage measurements comprising measurements using two or more optical metrology devices and an etch sensor device. An etch stage value is extracted using the developed correlation and the etch stage measurement. If the etch stage measurement objectives are not met, the metrology devices are modified, a different etch sensor device is selected, the etch stage measurements are enhanced, and/or the correlation algorithm is refined. The steps are iterated until the etch stage measurement objectives are met. The extracted etch stage value is used to adjust an equipment setting and/or process parameter of the fabrication cluster.
摘要翻译：提供了一种用于在蚀刻工艺中控制用于处理衬底的制造簇的方法和系统，该制造集群具有设备设置和工艺参数。开发了蚀刻阶段测量与实际蚀刻阶段数据的相关性，蚀刻阶段测量包括使用两个或更多个光学测量装置和蚀刻传感器装置的测量。使用显影的相关和蚀刻阶段测量提取蚀刻阶段值。如果不满足蚀刻阶段测量目标，则对测量装置进行修改，选择不同的蚀刻传感器装置，增强蚀刻阶段测量值和/或相关性算法。重复这些步骤直到满足蚀刻阶段测量目标。提取的蚀刻阶段值用于调整制造集群的设备设置和/或过程参数。

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