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    • 4. 发明授权
    • Memory element and method for manufacturing same
    • 记忆元件及其制造方法
    • US07876596B2
    • 2011-01-25
    • US11575091
    • 2005-11-04
    • Hiroyuki NishideKenji HondaYasunori YonekutaTakashi KurataShigemoto Abe
    • Hiroyuki NishideKenji HondaYasunori YonekutaTakashi KurataShigemoto Abe
    • G11C11/00
    • G11C13/0014B82Y10/00G11C13/0016G11C2213/15H01L27/285H01L51/0595Y10T29/49002
    • A novel nonvolatile memory element, which can be manufactured by a simple and high yield process by using an organic material and has a high on/off ratio, and a method for manufacturing such nonvolatile memory element. A switching layer (14) made of an electrical insulating radical polymer is provided between an anode layer (12) and a cathode layer (16). Further, a hole injection transport layer (13) is provided between the switching layer (14) and the anode layer (12), and an electron injection transport layer (15), between the switching layer (14) and the cathode layer (16). An intermediate layer is provided between the switching layer and the adjacent layer. The radical polymer is preferably nitroxide radical polymer. The switching layer (14), the hole injection transport layer (13) and the electron injection transport layer (15) are formed by being stacked by a wet process.
    • 一种新颖的非易失性存储元件,其可以通过使用有机材料通过简单且高收率的方法制造并且具有高的开/关比率,以及制造这种非易失性存储元件的方法。 在阳极层(12)和阴极层(16)之间设置由绝缘自由基聚合物构成的开关层(14)。 此外,在开关层(14)和阳极层(12)之间设置有空穴注入传输层(13),以及在开关层(14)和阴极层(16)之间的电子注入传输层(15) )。 在切换层和相邻层之间设置中间层。 自由基聚合物优选为氮氧自由基聚合物。 通过湿法堆叠形成开关层(14),空穴注入传输层(13)和电子注入传输层(15)。