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1. 发明申请

US20090240872A1 MEMORY DEVICE WITH MULTIPLE-ACCURACY READ COMMANDS 有权
标题翻译：具有多个精度读取命令的存储器件
公开(公告)号：US20090240872A1
公开(公告)日：2009-09-24
申请号：US12405275
申请日：2009-03-17
申请人： Uri Perlmutter , Ofir Shalvi , Yoav Kasorla , Naftali Sommer , Dotan Sokolov
发明人： Uri Perlmutter , Ofir Shalvi , Yoav Kasorla , Naftali Sommer , Dotan Sokolov
IPC分类号： G06F12/00 , G06F12/02 , G11C11/34
CPC分类号： G11C8/08 , G11C11/5642 , G11C16/349 , G11C27/005 , G11C29/00 , G11C29/021 , G11C29/028 , G11C2211/5641
摘要： A method for data storage includes defining at least first and second read commands for reading storage values from analog memory cells. The first read command reads the storage values at a first accuracy, and the second read command reads the storage values at a second accuracy, which is finer than the first accuracy. A condition is evaluated with respect to a read operation that is to be performed over a given group of the memory cells. One of the first and second read commands is selected responsively to the evaluated condition. The storage values are read from the given group of the memory cells using the selected read command.
摘要翻译：一种用于数据存储的方法包括至少定义用于从模拟存储器单元读取存储值的第一和第二读取命令。第一读取命令以第一精度读取存储值，并且第二读取命令以比第一精度更精细的第二精度读取存储值。针对要在特定组的存储单元上执行的读取操作来评估条件。响应于评估条件选择第一和第二读取命令中的一个。使用所选择的读取命令从存储器单元的给定组中读取存储值。

2. 发明申请

US20090168524A1 WEAR LEVEL ESTIMATION IN ANALOG MEMORY CELLS 有权
标题翻译：在模拟记忆细胞中磨损水平估计
公开(公告)号：US20090168524A1
公开(公告)日：2009-07-02
申请号：US12344233
申请日：2008-12-25
申请人： Oren Golov , Eyal Gurgi , Dotan Sokolov , Yoav Kasorla , Shai Winter
发明人： Oren Golov , Eyal Gurgi , Dotan Sokolov , Yoav Kasorla , Shai Winter
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C27/005 , G11C16/349 , G11C16/3495
摘要： A method for operating a memory includes applying at least one pulse to a group of analog memory cells, so as to cause the memory cells in the group to assume respective storage values. After applying the pulse, the respective storage values are read from the memory cells in the group. One or more statistical properties of the read storage values are computed. A wear level of the group of the memory cells is estimated responsively to the statistical properties.
摘要翻译：一种用于操作存储器的方法包括将至少一个脉冲施加到一组模拟存储器单元，以便使该组中的存储器单元呈现相应的存储值。在应用脉冲之后，从组中的存储器单元读取相应的存储值。计算读取存储值的一个或多个统计属性。响应于统计属性来估计存储器单元组的磨损水平。

3. 发明授权

US09293194B2 Programming and erasure schemes for analog memory cells 有权
标题翻译：模拟存储单元的编程和擦除方案
公开(公告)号：US09293194B2
公开(公告)日：2016-03-22
申请号：US13471484
申请日：2012-05-15
申请人： Eyal Gurgi , Yoav Kasorla , Ofir Shalvi
发明人： Eyal Gurgi , Yoav Kasorla , Ofir Shalvi
IPC分类号： G11C11/34 , G11C11/56 , G11C16/04 , G11C16/34
CPC分类号： G11C11/5628 , G11C16/04 , G11C16/349
摘要： A method for data storage, in a memory that includes multiple analog memory cells, includes setting a parameter of an iterative process applied to a group of the memory cells based on one or more data values stored in at least one of the memory cells in the memory. The iterative process is performed in the group of the memory cells in accordance with the set parameter.
摘要翻译：一种用于在包括多个模拟存储器单元的存储器中的数据存储的方法，包括基于存储在存储器单元中的至少一个存储器单元中的一个或多个数据值来设置应用于一组存储器单元的迭代过程的参数记忆。根据设定的参数在存储单元组中执行迭代处理。

4. 发明申请

US20090158126A1 EFFICIENT INTERFERENCE CANCELLATION IN ANALOG MEMORY CELL ARRAYS 有权
标题翻译：在模拟存储器单元阵列中有效的干扰消除
公开(公告)号：US20090158126A1
公开(公告)日：2009-06-18
申请号：US12332368
申请日：2008-12-11
申请人： Uri Perlmutter , Yoav Kasorla , Oren Golov
发明人： Uri Perlmutter , Yoav Kasorla , Oren Golov
IPC分类号： G11C29/52 , G06F12/02 , G06F11/10
CPC分类号： G06F11/1072 , G11C11/56 , G11C11/5628 , G11C11/5642 , G11C16/04 , G11C16/3418 , G11C27/005 , G11C29/00 , G11C29/50 , G11C2029/5002 , G11C2211/5634
摘要： A method includes storing data in a group of analog memory cells by writing first storage values to the cells. After storing the data, second storage values are read from the cells using one or more first read thresholds. Third storage values that potentially cause cross-coupling interference in the second storage values are identified, and the third storage values are processed, to identify a subset of the second storage values as severely-interfered values. Fourth storage values are selectively re-read from the cells holding the severely-interfered values using one or more second read thresholds, different from the first read thresholds. The cross-coupling interference in the severely-interfered storage values is canceled using the re-read fourth storage values. The second storage values, including the severely-interfered values in which the cross-coupling interference has been canceled, are processed so as to reconstruct the data stored in the cell group.
摘要翻译：一种方法包括通过将第一存储值写入单元来将数据存储在一组模拟存储单元中。在存储数据之后，使用一个或多个第一读取阈值从单元读取第二存储值。识别潜在地在第二存储值中引起交叉耦合干扰的第三存储值，并且处理第三存储值，以将第二存储值的子集识别为严重干扰的值。使用与第一读取阈值不同的一个或多个第二读取阈值，从保持严重干扰值的单元有选择地重新读取第四存储值。使用重新读取的第四存储值来消除严重干扰的存储值中的交叉耦合干扰。处理包括交叉耦合干扰已被消除的严重干扰值的第二存储值，以便重构存储在小区组中的数据。

5. 发明授权

US09009547B2 Advanced programming verification schemes for analog memory cells 有权
标题翻译：模拟存储器单元的高级编程验证方案
公开(公告)号：US09009547B2
公开(公告)日：2015-04-14
申请号：US13356694
申请日：2012-01-24
申请人： Eyal Gurgi , Yoav Kasorla , Barak Rotbard , Shai Ojalvo
发明人： Eyal Gurgi , Yoav Kasorla , Barak Rotbard , Shai Ojalvo
IPC分类号： G11C29/00 , G11C27/00 , G11C13/00 , G11C11/56
CPC分类号： G11C29/38 , G06F11/07 , G06F11/073 , G06F11/0772 , G06F11/263 , G11C11/1677 , G11C11/5628 , G11C11/5635 , G11C11/5678 , G11C13/0035 , G11C13/0064 , G11C13/0069 , G11C13/0097 , G11C16/10 , G11C16/3459 , G11C29/12015 , G11C29/44 , G11C29/50012
摘要： A method for data storage includes receiving in a memory device data for storage in a group of analog memory cells. The data is stored in the group by performing a Program and Verify (P&V) process, which applies to the memory cells in the group a sequence of programming pulses and compares respective analog values of the memory cells in the group to respective verification thresholds. Immediately following successful completion of the P&V process, a mismatch between the stored data and the received data is detected in the memory device. An error in storage of the data is reported responsively to the mismatch.
摘要翻译：一种用于数据存储的方法包括在存储器装置中接收用于存储在一组模拟存储器单元中的数据。通过执行程序和验证（P＆V）过程将数据存储在组中，该过程适用于组中的存储器单元的编程脉冲序列，并将组中的存储器单元的各自的模拟值与相应的验证阈值进行比较。在P＆V进程成功完成之后，在存储器件中检测到存储的数据与接收到的数据之间的不匹配。响应于不匹配报告数据存储错误。

6. 发明申请

US20150012785A1 Advanced Programming Verification Schemes for Analog Memory Cells 有权
标题翻译：模拟存储器单元的高级编程验证方案
公开(公告)号：US20150012785A1
公开(公告)日：2015-01-08
申请号：US13356694
申请日：2012-01-24
申请人： Eyal Gurgi , Yoav Kasorla , Barak Rotbard , Shai Ojalvo
发明人： Eyal Gurgi , Yoav Kasorla , Barak Rotbard , Shai Ojalvo
IPC分类号： G06F11/07 , G06F11/263 , G11C29/10
CPC分类号： G11C29/38 , G06F11/07 , G06F11/073 , G06F11/0772 , G06F11/263 , G11C11/1677 , G11C11/5628 , G11C11/5635 , G11C11/5678 , G11C13/0035 , G11C13/0064 , G11C13/0069 , G11C13/0097 , G11C16/10 , G11C16/3459 , G11C29/12015 , G11C29/44 , G11C29/50012
摘要： A method for data storage includes receiving in a memory device data for storage in a group of analog memory cells. The data is stored in the group by performing a Program and Verify (P&V) process, which applies to the memory cells in the group a sequence of programming pulses and compares respective analog values of the memory cells in the group to respective verification thresholds. Immediately following successful completion of the P&V process, a mismatch between the stored data and the received data is detected in the memory device. An error in storage of the data is reported responsively to the mismatch.
摘要翻译：一种用于数据存储的方法包括在存储器装置中接收用于存储在一组模拟存储器单元中的数据。通过执行程序和验证（P＆V）过程将数据存储在组中，该过程适用于组中的存储器单元的编程脉冲序列，并将组中的存储器单元的各自的模拟值与相应的验证阈值进行比较。在P＆V进程成功完成之后，在存储器件中检测到存储的数据与接收到的数据之间的不匹配。响应于不匹配报告数据存储错误。

7. 发明授权

US08479080B1 Adaptive over-provisioning in memory systems 有权
标题翻译：内存系统中的自适应过度配置
公开(公告)号：US08479080B1
公开(公告)日：2013-07-02
申请号：US12822207
申请日：2010-06-24
申请人： Ofir Shalvi , Naftali Sommer , Yoav Kasorla
发明人： Ofir Shalvi , Naftali Sommer , Yoav Kasorla
IPC分类号： H03M13/00
CPC分类号： G06F12/0802 , G06F3/061 , G06F3/0619 , G06F3/0665 , G06F3/0688 , G06F11/10 , G06F11/1008 , G06F12/02 , G06F12/0223 , G06F12/023 , G06F12/0246 , G06F2212/7205 , Y02D10/13
摘要： A method for data storage includes, in a memory that includes multiple memory blocks, specifying at a first time a first over-provisioning overhead, and storing data in the memory while retaining in the memory blocks memory areas, which do not hold valid data and whose aggregated size is at least commensurate with the specified first over-provisioning overhead. Portions of the data from one or more previously-programmed memory blocks containing one or more of the retained memory areas are compacted. At a second time subsequent to the first time, a second over-provisioning overhead, different from the first over-provisioning overhead, is specified, and data storage and data portion compaction is continued while complying with the second over-provisioning overhead.
摘要翻译：一种用于数据存储的方法包括在包括多个存储器块的存储器中，在第一时间指定第一过度供应开销，并且将数据存储在存储器中，同时保留存储器块，其不保存有效数据，其聚合大小至少与指定的第一超额配置开销相称。包含一个或多个保留的存储区域的一个或多个预先编程的存储块的数据的部分被压缩。在第一次之后的第二时间，指定与第一过度供应开销不同的第二过度供应开销，并且在遵循第二过度供应开销的同时继续数据存储和数据部分压缩。

8. 发明授权

US08456905B2 Efficient data storage in multi-plane memory devices 有权
标题翻译：在多平面存储设备中高效的数据存储
公开(公告)号：US08456905B2
公开(公告)日：2013-06-04
申请号：US12332370
申请日：2008-12-11
申请人： Yoav Kasorla , Eyal Gurgi , Dotan Sokolov , Ofir Shalvi
发明人： Yoav Kasorla , Eyal Gurgi , Dotan Sokolov , Ofir Shalvi
IPC分类号： G11C11/34
CPC分类号： G06F11/1072 , G06F12/0246 , G06F12/0607 , G06F2212/7208 , G11C29/52
摘要： A method for data storage includes initially storing a sequence of data pages in a memory that includes multiple memory arrays, such that successive data pages in the sequence are stored in alternation in a first number of the memory arrays. The initially-stored data pages are rearranged in the memory so as to store the successive data pages in the sequence in a second number of the memory arrays, which is less than the first number. The rearranged data pages are read from the second number of the memory arrays.
摘要翻译：一种用于数据存储的方法包括：首先将数据页序列存储在包括多个存储器阵列的存储器中，使得序列中的连续数据页被交替地存储在第一数量的存储器阵列中。将初始存储的数据页重新排列在存储器中，以便将序列中的连续数据页存储在小于第一数量的第二数量的存储器阵列中。从第二数量的存储器阵列中读取重新排列的数据页。

9. 发明授权

US08649200B2 Enhanced programming and erasure schemes for analog memory cells 有权
标题翻译：增强的模拟存储单元的编程和擦除方案
公开(公告)号：US08649200B2
公开(公告)日：2014-02-11
申请号：US13471483
申请日：2012-05-15
申请人： Eyal Gurgi , Yoav Kasorla , Ofir Shalvi
发明人： Eyal Gurgi , Yoav Kasorla , Ofir Shalvi
IPC分类号： G11C27/00
CPC分类号： G11C27/005 , G11C11/5628 , G11C11/5635 , G11C11/5678 , G11C13/0004 , G11C13/0035 , G11C13/0069 , G11C13/0097 , G11C2013/0076
摘要： A method for data storage includes setting a group of analog memory cells to respective analog values by performing an iterative process that applies a sequence of pulses to the memory cells in the group. During the iterative process, a progress of the iterative process is assessed, and a parameter of the iterative process is modified responsively to the assessed progress. The iterative process is continued in accordance with the modified parameter.
摘要翻译：一种用于数据存储的方法包括：通过执行向组中的存储器单元应用脉冲序列的迭代过程来将一组模拟存储器单元设置为相应的模拟值。在迭代过程中，评估迭代过程的进展，并根据评估的进度来修改迭代过程的参数。根据修改的参数继续迭代过程。

10. 发明授权

US08259497B2 Programming schemes for multi-level analog memory cells 有权
标题翻译：多级模拟存储单元的编程方案
公开(公告)号：US08259497B2
公开(公告)日：2012-09-04
申请号：US12186867
申请日：2008-08-06
申请人： Ofir Shalvi , Naftali Sommer , Dotan Sokolov , Yoav Kasorla
发明人： Ofir Shalvi , Naftali Sommer , Dotan Sokolov , Yoav Kasorla
IPC分类号： G11C16/34 , G11C16/26 , G11C16/06 , G11C29/52 , G11C16/10
CPC分类号： G11C11/5628 , G06F11/1008 , G06F11/1068 , G11C11/56 , G11C16/34 , G11C16/3459 , G11C29/00 , G11C29/52 , H03M13/2906
摘要： A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.
摘要翻译：一种用于数据存储的方法包括：通过对存储器单元进行编程来采用各自的第一编程级别，来将第一数据位在第一时间存储在一组多位模拟存储单元中。第二数据位通过对存储器单元进行编程以采取依赖于第一编程电平和第二数据位的相应的第二编程电平而在比第一时间晚的第二时间存储在存储单元组中。响应于第一次和第二次之间的差异选择存储策略。将存储策略应用于从第一数据位和第二数据位中选择的至少一组数据位。

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