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1. 发明授权

US09293194B2 Programming and erasure schemes for analog memory cells 有权
标题翻译：模拟存储单元的编程和擦除方案
公开(公告)号：US09293194B2
公开(公告)日：2016-03-22
申请号：US13471484
申请日：2012-05-15
申请人： Eyal Gurgi , Yoav Kasorla , Ofir Shalvi
发明人： Eyal Gurgi , Yoav Kasorla , Ofir Shalvi
IPC分类号： G11C11/34 , G11C11/56 , G11C16/04 , G11C16/34
CPC分类号： G11C11/5628 , G11C16/04 , G11C16/349
摘要： A method for data storage, in a memory that includes multiple analog memory cells, includes setting a parameter of an iterative process applied to a group of the memory cells based on one or more data values stored in at least one of the memory cells in the memory. The iterative process is performed in the group of the memory cells in accordance with the set parameter.
摘要翻译：一种用于在包括多个模拟存储器单元的存储器中的数据存储的方法，包括基于存储在存储器单元中的至少一个存储器单元中的一个或多个数据值来设置应用于一组存储器单元的迭代过程的参数记忆。根据设定的参数在存储单元组中执行迭代处理。

2. 发明授权

US08949684B1 Segmented data storage 有权
标题翻译：分段数据存储
公开(公告)号：US08949684B1
公开(公告)日：2015-02-03
申请号：US12551583
申请日：2009-09-01
申请人： Ofir Shalvi , Barak Rotbard , Oren Golov , Micha Anholt , Uri Perlmutter
发明人： Ofir Shalvi , Barak Rotbard , Oren Golov , Micha Anholt , Uri Perlmutter
IPC分类号： G11C29/00 , G11C29/04
CPC分类号： G11C16/3404 , G06F11/1012 , G06F11/1072 , G11C5/005 , G11C16/00 , G11C2029/0411 , G11C2029/4402
摘要： A method for data storage includes assigning in a memory that includes one or more storage devices a first storage area for storage of user data, and a second storage area, which is separate from the first storage area, for storage of redundancy information related to the user data. Input data is processed to produce redundancy data, and the input data is stored in the first storage area using at least one first write command. The redundancy data is stored in the second storage area using at least one second write command, separate from the first write command.
摘要翻译：一种用于数据存储的方法包括在包括一个或多个存储设备的存储器中分配用于存储用户数据的第一存储区域和与第一存储区域分开的第二存储区域，用于存储与第一存储区域相关的冗余信息用户数据。处理输入数据以产生冗余数据，并且使用至少一个第一写入命令将输入数据存储在第一存储区域中。冗余数据使用与第一写入命令分开的至少一个第二写入命令存储在第二存储区域中。

3. 发明授权

US08694814B1 Reuse of host hibernation storage space by memory controller 有权
标题翻译：内存控制器重用主机休眠存储空间
公开(公告)号：US08694814B1
公开(公告)日：2014-04-08
申请号：US12880101
申请日：2010-09-12
申请人： Tavi Salomon , Ofir Shalvi , Michael Shachar , Oren Golov
发明人： Tavi Salomon , Ofir Shalvi , Michael Shachar , Oren Golov
IPC分类号： G06F1/00
CPC分类号： G06F3/0631 , G06F1/32 , G06F1/3234 , G06F1/3268 , G06F3/0604 , G06F3/0673 , Y02D10/154 , Y02D50/20
摘要： A method for data storage includes, in a host system that operates alternately in a normal state and a hibernation state, reserving a hibernation storage space in a non-volatile storage device for storage of hibernation-related information in preparation for entering the hibernation state. While the host system is operating in the normal state, a storage task other than storage of the hibernation-related information is performed using at least a portion of the reserved hibernation storage space.
摘要翻译：一种用于数据存储的方法包括在正常状态和休眠状态下交替操作的主机系统中，在非易失性存储设备中预留休眠存储空间以存储休眠相关信息以准备进入休眠状态。当主机系统在正常状态下运行时，使用保留的休眠存储空间的至少一部分来执行存储冬眠相关信息之外的存储任务。

4. 发明授权

US08595591B1 Interference-aware assignment of programming levels in analog memory cells 有权
标题翻译：模拟存储器单元中编程级别的干扰感知分配
公开(公告)号：US08595591B1
公开(公告)日：2013-11-26
申请号：US13176761
申请日：2011-07-06
申请人： Ofir Shalvi , Naftali Sommer , Ronen Dar , Micha Anholt
发明人： Ofir Shalvi , Naftali Sommer , Ronen Dar , Micha Anholt
IPC分类号： G11C29/00 , G11C11/34 , G11C16/04 , G11C16/06
CPC分类号： G11C16/34 , G06F11/1008 , G11C11/5628 , G11C27/005 , G11C2029/0411 , G11C2211/5641
摘要： A method for data storage includes accepting data for storage in a memory including multiple analog memory cells. For each memory cell, a respective set of nominal analog values is assigned for representing data values to be stored in the memory cell, by choosing the nominal analog values for a given memory cell in a respective range that depends on interference between the given memory cell and at least one other memory cell in the memory. The data is stored in each memory cell using the respective selected set of the nominal analog values.
摘要翻译：一种用于数据存储的方法包括接收用于存储在包括多个模拟存储器单元的存储器中的数据。对于每个存储器单元，通过在取决于给定存储器单元之间的干扰的相应范围内选择给定存储器单元的额定模拟值，分配相应的一组标称模拟值来表示要存储在存储单元中的数据值以及存储器中的至少一个其它存储单元。使用相应选定的标称模拟值集合将数据存储在每个存储单元中。

5. 发明授权

US08570804B2 Distortion estimation and cancellation in memory devices 有权
公开(公告)号：US08570804B2
公开(公告)日：2013-10-29
申请号：US13239411
申请日：2011-09-22
申请人： Ofir Shalvi , Naftali Sommer , Eyal Gurgi , Ariel Maislos
发明人： Ofir Shalvi , Naftali Sommer , Eyal Gurgi , Ariel Maislos
IPC分类号： G11C16/04 , G11C16/06 , G11C16/10 , G11C16/12 , G11C16/34 , G11C16/26
CPC分类号： G06F11/1068 , G06F11/1016 , G11C16/26
摘要： A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

6. 发明授权

US08498151B1 Data storage in analog memory cells using modified pass voltages 有权
标题翻译：使用修正的通过电压在模拟存储单元中数据存储
公开(公告)号：US08498151B1
公开(公告)日：2013-07-30
申请号：US12534893
申请日：2009-08-04
申请人： Shai Winter , Ofir Shalvi
发明人： Shai Winter , Ofir Shalvi
IPC分类号： G11C11/34 , G11C16/06
CPC分类号： G11C16/3459 , G11C11/5642 , G11C16/0483 , G11C16/10 , G11C16/3454
摘要： A method for data storage includes storing data in a target analog memory cell, which is one of a group of analog memory cells that are connected in series with one another, by writing a storage value into the target memory cell. The storage value written into the target memory cell is verified while biasing the other memory cells in the group with respective first pass voltages. After writing and verifying the storage value, the storage value is read from the target memory cell while biasing the other memory cells in the group with respective second pass voltages, wherein at least one of the second pass voltages applied to one of the other memory cells in the group is lower than a respective first pass voltage applied to the one of the other memory cells. The data is reconstructed responsively to the read storage value.
摘要翻译：一种用于数据存储的方法包括：通过将存储值写入到目标存储单元中，将数据存储在通过彼此串联连接的一组模拟存储单元之一的目标模拟存储单元中。验证写入目标存储器单元的存储值，同时以相应的第一通过电压偏置组中的其他存储器单元。在写入并验证存储值之后，从目标存储器单元读取存储值，同时以相应的第二通过电压偏置组中的其它存储单元，其中施加到其它存储单元之一中的至少一个第二通过电压在组中低于施加到其他存储单元之一的相应的第一通过电压。响应于读取的存储值重建数据。

7. 发明授权

US08374014B2 Rejuvenation of analog memory cells 有权
标题翻译：模拟记忆体复原
公开(公告)号：US08374014B2
公开(公告)日：2013-02-12
申请号：US13284913
申请日：2011-10-30
申请人： Barak Rotbard , Naftali Sommer , Shai Winter , Ofir Shalvi , Dotan Sokolov , Or Ordentlich , Micha Anholt
发明人： Barak Rotbard , Naftali Sommer , Shai Winter , Ofir Shalvi , Dotan Sokolov , Or Ordentlich , Micha Anholt
IPC分类号： G11C27/00
CPC分类号： G11C27/005 , G11C11/56 , G11C11/5621 , G11C13/00 , G11C13/0033 , G11C13/0035 , G11C16/0483 , G11C16/3418 , G11C16/3431 , G11C16/349 , G11C29/00 , G11C29/52 , G11C2029/0409 , G11C2029/5002
摘要： A method for data storage in a memory that includes multiple analog memory cells fabricated using respective physical media, includes identifying a group of the memory cells whose physical media have deteriorated over time below a given storage quality level. A rejuvenation process, which causes the physical media of the memory cells in the group to meet the given storage quality level, is applied to the identified group. Data is stored in the rejuvenated group of the memory cells.
摘要翻译：一种存储器中的数据存储方法，包括使用相应的物理介质制造的多个模拟存储器单元，包括识别其物理介质在给定的存储质量水平下随时间劣化的一组存储器单元。使组中存储单元的物理介质满足给定存储质量水平的复原过程被应用于所识别的组。数据存储在复原的存储单元组中。

8. 发明授权

US08369141B2 Adaptive estimation of memory cell read thresholds 有权
公开(公告)号：US08369141B2
公开(公告)日：2013-02-05
申请号：US12522175
申请日：2008-03-11
申请人： Naftali Sommer , Ofir Shalvi , Uri Perlmutter , Oren Golov , Eyal Gurgi , Micha Anholt , Dotan Sokolov
发明人： Naftali Sommer , Ofir Shalvi , Uri Perlmutter , Oren Golov , Eyal Gurgi , Micha Anholt , Dotan Sokolov
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C16/04 , G11C8/20 , G11C11/5642 , G11C16/20 , G11C16/28 , G11C2211/5634
摘要： A method for operating a memory (28) that includes a plurality of analog memory cells (32) includes storing data in the memory by writing first storage values to the cells. Second storage values are read from the cells, and a Cumulative Distribution Function (CDF) of the second storage values is estimated. The estimated CDF is processed so as to compute one or more thresholds. A memory access operation is performed on the cells using the one or more thresholds.

9. 发明申请

US20120297270A1 Programming Schemes for Multi-Level Analog Memory Cells 有权
标题翻译：多级模拟存储单元的编程方案
公开(公告)号：US20120297270A1
公开(公告)日：2012-11-22
申请号：US13566372
申请日：2012-08-03
申请人： Ofir Shalvi , Naftali Sommer , Dotan Sokolov , Yoav Kasoria
发明人： Ofir Shalvi , Naftali Sommer , Dotan Sokolov , Yoav Kasoria
IPC分类号： G11C16/10 , G06F11/10 , H03M13/05
CPC分类号： G11C11/5628 , G06F11/1008 , G06F11/1068 , G11C11/56 , G11C16/34 , G11C16/3459 , G11C29/00 , G11C29/52 , H03M13/2906
摘要： A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.
摘要翻译：一种用于数据存储的方法包括：通过对存储器单元进行编程来采用各自的第一编程级别，来将第一数据位在第一时间存储在一组多位模拟存储单元中。第二数据位通过对存储器单元进行编程以采取依赖于第一编程电平和第二数据位的相应的第二编程电平而在比第一时间晚的第二时间存储在存储单元组中。响应于第一次和第二次之间的差异选择存储策略。将存储策略应用于从第一数据位和第二数据位中选择的至少一组数据位。

10. 发明授权

US08300478B2 Reducing distortion using joint storage 有权
标题翻译：使用联合储存减少失真
公开(公告)号：US08300478B2
公开(公告)日：2012-10-30
申请号：US13412780
申请日：2012-03-06
申请人： Ofir Shalvi , Eyal Gurgi , Uri Perlmutter , Oren Golov
发明人： Ofir Shalvi , Eyal Gurgi , Uri Perlmutter , Oren Golov
IPC分类号： G11C7/10
CPC分类号： G11C11/5628 , G11C16/10 , G11C16/3418
摘要： A method for data storage includes predefining an order of programming a plurality of analog memory cells that are arranged in rows. The order specifies that for a given row having neighboring rows on first and second sides, the memory cells in the given row are programmed only while the memory cells in the neighboring rows on at least one of the sides are in an erased state, and that the memory cells in the given row are programmed to assume a highest programming level, which corresponds to a largest analog value among the programming levels of the cells, only after programming all the memory cells in the given row to assume the programming levels other than the highest level. Data is stored in the memory cells by programming the memory cells in accordance with the predefined order.
摘要翻译：一种用于数据存储的方法包括预先定义以行排列的多个模拟存储器单元的编程顺序。该顺序指定对于在第一和第二侧具有相邻行的给定行，只有当至少一个侧面上的相邻行中的存储器单元处于擦除状态时，给定行中的存储器单元被编程，并且该给定行中的存储器单元被编程为假设最高编程电平，其对应于单元的编程电平中的最大模拟值，只有在编程给定行中的所有存储器单元之后才采用除最高水平。根据预定义的顺序对存储器单元进行编程，将数据存储在存储器单元中。

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