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    • 2. 发明授权
    • Method for etching trench in manufacturing semiconductor devices
    • 在制造半导体器件中蚀刻沟槽的方法
    • US06291315B1
    • 2001-09-18
    • US08889918
    • 1997-07-10
    • Yoshiaki NakayamaShoji Miura
    • Yoshiaki NakayamaShoji Miura
    • H01L21304
    • H01L21/76251H01L21/3081
    • A semiconductor wafer in which black silicon does not form during trench etching even when side rinsing is carried out during a photolithography process. In an embedded oxide film interposed between first and second semiconductor wafers of a bonded SOI wafer, the film thickness of a peripheral part thereof is made greater than a predetermined thickness Dsio so that it functions as an oxide film for etching prevention. When side rinsing is carried out in a resist coating process to form an opening in an oxide film for masking use in trench etching, the oxide film for masking use at the periphery is also etched during formation of the opening. Due to over-etching at that time, the oxide film for etching prevention is etched by a film thickness d1. During trench etching also, the oxide film for etching prevention is etched by a film thickness d2. Accordingly, if the film thickness Dsio of the oxide film for etching prevention is set to be greater than the film thickness d1+d2, because an oxide film remains at the final stage, the formation of black silicon can be prevented.
    • 即使在光刻工序中进行侧面漂洗的情况下,在沟槽蚀刻中也不形成黑色硅的半导体晶片。 在插入接合的SOI晶片的第一和第二半导体晶片之间的嵌入式氧化膜中,其周边部分的膜厚度大于预定厚度Dsio,从而其用作防止蚀刻的氧化物膜。 当在抗蚀剂涂布工艺中进行侧面冲洗以在沟槽蚀刻中用于掩模使用的氧化膜中形成开口时,在形成开口期间也蚀刻在周边使用的用于掩蔽的氧化膜。 此时由于过蚀刻,用于防止蚀刻的氧化膜被膜厚度d1蚀刻。 在沟槽蚀刻期间,用于防蚀蚀的氧化膜也被膜厚d2蚀刻。 因此,如果将用于防蚀蚀的氧化膜的膜厚度Dsio设定为大于膜厚度d1 + d2,因为氧化膜保持在最后阶段,所以可以防止形成黑色硅。
    • 4. 发明授权
    • Movie camera for storing movie and still images in proper chronology on
a common recording medium
    • 用于在通用记录介质上以适当的时间顺序存储电影和静止图像的电影摄像机
    • US5751348A
    • 1998-05-12
    • US659513
    • 1996-06-06
    • Masafumi InuiyaYoshiaki Nakayama
    • Masafumi InuiyaYoshiaki Nakayama
    • G03B7/00G03B15/05H04N5/235H04N5/335H04N5/353H04N5/372H04N5/378H04N9/04H04N9/73H04N5/225
    • H04N5/2354H04N5/2352H04N9/735
    • A movie camera having: a strobe light for illuminating a subject; a shutter speed switching circuit for changing speeds of a shutter for the charge coupled device (CCD); a white balance switching circuit for adjusting the balance between color signals; an automatic gain control (AGC) circuit for adjusting amplifying gain for an image signal; a control circuit for energizing the shutter speed switching circuit so that a flash of the strobe light is terminated within the storing time of the CCD by changing the shutter speed to a higher speed, for energizing the white balance switching circuit so that the white balance is adjusted to coincide with the color temperature of the strobe light, and for fixing the gain of the AGC circuit. Accordingly, clear pictures having uniform brightness are obtained in each shot by terminating a flash of the strobe light within the storing time of CCD and by switching the shutter speed to a higher speed, and fluctuation of the brightness of pictures shot after a flash of the strobe light is prevented by fixing the gain of an AGC circuit and by making the white balance coincide with the color temperature of the strobe light.
    • 一种电影摄像机,具有:用于照亮被摄体的闪光灯; 用于改变电荷耦合器件(CCD)的快门速度的快门速度切换电路; 白平衡切换电路,用于调整色彩信号之间的平衡; 用于调整图像信号的放大增益的自动增益控制(AGC)电路; 用于对快门速度切换电路进行通电的控制电路,使得通过将快门速度改变为更高的速度在闪光灯的存储时间内终止闪光灯,以激活白平衡切换电路,使白平衡为 调节为与频闪光的色温一致,并且用于固定AGC电路的增益。 因此,通过在CCD的存储时间内终止闪光灯,并且通过将快门速度切换到更高的速度,并且闪光之后拍摄的图像的亮度的波动,在每次拍摄中获得具有均匀亮度的清晰图像 通过固定AGC电路的增益并使白平衡与闪光灯的色温一致来防止频闪光。