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1. 发明申请

US20050186694A1 Method for fabricating a nitride semiconductor light-emitting device 有权
标题翻译：氮化物半导体发光元件的制造方法
公开(公告)号：US20050186694A1
公开(公告)日：2005-08-25
申请号：US11060381
申请日：2005-02-17
申请人： Teruyoshi Takakura , Takeshi Kamikawa , Yoshika Kaneko
发明人： Teruyoshi Takakura , Takeshi Kamikawa , Yoshika Kaneko
IPC分类号： H01S5/02 , H01L21/00 , H01L21/20 , H01L21/205 , H01L21/306 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/30612 , H01L33/007 , H01S5/0202 , H01S5/2004 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/305 , H01S5/34333 , H01S2304/04
摘要： Provided is a method for fabricating a nitride semiconductor light-emitting device including a nitride semiconductor substrate having a groove and a ridge formed on the top surface thereof so as to extend in the shape of stripes and a nitride semiconductor growth layer consisting of a plurality of nitride semiconductor layers laid on top of the nitride semiconductor substrate. The method involves a step of forming a 10 μm or more wide flat region above at least either of the groove and ridge by forming the nitride semiconductor growth layer on top of the nitride semiconductor substrate so that the height of the nitride semiconductor growth layer laid above the groove is smaller than the height of the nitride semiconductor growth layer laid above the ridge.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法，该氮化物半导体发光器件包括氮化物半导体衬底，该氮化物半导体衬底具有形成在其顶表面上的槽和脊，以便形成条状，并且由多个位于氮化物半导体衬底顶部的氮化物半导体层。该方法包括通过在氮化物半导体衬底的顶部上形成氮化物半导体生长层，在氮化物半导体生长层的上方形成上述的氮化物半导体生长层的高度，形成在沟槽和脊的至少任意一个之上的10个以上的宽的平坦区域的步骤该沟槽小于在该脊上方布置的氮化物半导体生长层的高度。

2. 发明授权

US08030110B2 Nitride semiconductor light-emitting device and method for fabrication thereof 有权
公开(公告)号：US08030110B2
公开(公告)日：2011-10-04
申请号：US12979059
申请日：2010-12-27
申请人： Takeshi Kamikawa , Eiji Yamada , Masahiro Araki , Yoshika Kaneko
发明人： Takeshi Kamikawa , Eiji Yamada , Masahiro Araki , Yoshika Kaneko
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01L33/007 , H01S5/0213 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 cm−2 or less, a stripe-shaped depressed portion (16) is formed by etching. On this substrate (10), a nitride semiconductor film (11) is grown, and a laser stripe (12) is formed off the area right above the depressed portion (16). With this structure, the laser stripe (12) is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.

3. 发明授权

US07903710B2 Nitride semiconductor light-emitting device 有权
公开(公告)号：US07903710B2
公开(公告)日：2011-03-08
申请号：US12656932
申请日：2010-02-19
申请人： Takeshi Kamikawa , Yoshika Kaneko , Kensaku Motoki
发明人： Takeshi Kamikawa , Yoshika Kaneko , Kensaku Motoki
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01L21/0237 , H01L21/0254 , H01L21/02636 , H01S5/2201 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconductor layer or substrate has a trench region deeper than the low defect density region. Thus by digging the trench in the defect concentration region, the growth detection is uniformized, and the surface planarity is improved. The uniformity of the characteristic in the wafer surface leads to improvement of the yield.

4. 发明申请

US20080080578A1 NITRIDE SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATION THEREOF 有权
标题翻译：氮化物半导体激光器件及其制造方法
公开(公告)号：US20080080578A1
公开(公告)日：2008-04-03
申请号：US11877551
申请日：2007-10-23
申请人： Takeshi Kamikawa , Yoshika Kaneko
发明人： Takeshi Kamikawa , Yoshika Kaneko
IPC分类号： H01S5/22
CPC分类号： H01S5/3202 , H01L33/20 , H01L33/32 , H01S5/0207 , H01S5/32341 , H01S2304/12
摘要： A nitride semiconductor light-emitting device includes a nitride semiconductor substrate of which at least part of a surface is formed from a nitride semiconductor and a nitride film semiconductor growth layer laid on the surface of the nitride semiconductor substrate. A carved region in the shape of a depressed portion may be formed on the surface of the nitride semiconductor substrate. The carved region may have an inverted tapered shape or a tapered shape in cross-section. Alternatively, or additionally, the nitride film semiconductor growth layer may include a gallium nitride film or an aluminum containing gallium nitride film where the nitride film semiconductor growth layer makes contact with the nitride semiconductor substrate. Alternatively, or additionally, the nitride film semiconductor growth layer may include a light-emitting portion formed at a location 20 μm or more away from the carved region.
摘要翻译：氮化物半导体发光器件包括氮化物半导体衬底，其氮化物半导体和氮化物半导体生长层的至少一部分表面由氮化物半导体形成，氮化物半导体生长层位于氮化物半导体衬底的表面上。可以在氮化物半导体衬底的表面上形成凹陷部形状的雕刻区域。雕刻区域的截面可以具有倒锥形或锥形形状。或者或另外，氮化物膜半导体生长层可以包括氮化镓膜或含氮化镓膜，其中氮化物膜半导体生长层与氮化物半导体衬底接触。或者或另外，氮化物膜半导体生长层可以包括形成在距离雕刻区域20m或更远的位置处的发光部分。

5. 发明授权

US07109049B2 Method for fabricating a nitride semiconductor light-emitting device 有权
标题翻译：氮化物半导体发光元件的制造方法
公开(公告)号：US07109049B2
公开(公告)日：2006-09-19
申请号：US11060381
申请日：2005-02-17
申请人： Teruyoshi Takakura , Takeshi Kamikawa , Yoshika Kaneko
发明人： Teruyoshi Takakura , Takeshi Kamikawa , Yoshika Kaneko
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/30612 , H01L33/007 , H01S5/0202 , H01S5/2004 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/305 , H01S5/34333 , H01S2304/04
摘要： Provided is a method for fabricating a nitride semiconductor light-emitting device including a nitride semiconductor substrate having a groove and a ridge formed on the top surface thereof so as to extend in the shape of stripes and a nitride semiconductor growth layer consisting of a plurality of nitride semiconductor layers laid on top of the nitride semiconductor substrate. The method involves a step of forming a 10 μm or more wide flat region above at least either of the groove and ridge by forming the nitride semiconductor growth layer on top of the nitride semiconductor substrate so that the height of the nitride semiconductor growth layer laid above the groove is smaller than the height of the nitride semiconductor growth layer laid above the ridge.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法，该氮化物半导体发光器件包括氮化物半导体衬底，该氮化物半导体衬底具有形成在其顶表面上的槽和脊，以便形成条状，并且由多个位于氮化物半导体衬底顶部的氮化物半导体层。该方法包括通过在氮化物半导体衬底的顶部上形成氮化物半导体生长层，在氮化物半导体生长层的上方形成上述的氮化物半导体生长层的高度，形成在沟槽和脊的至少任意一个之上的10个以上的宽的平坦区域的步骤该沟槽小于在该脊上方布置的氮化物半导体生长层的高度。

6. 发明申请

US20050025204A1 Nitride semiconductor light-emitting device and method for fabrication thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20050025204A1
公开(公告)日：2005-02-03
申请号：US10902481
申请日：2004-07-30
申请人： Takeshi Kamikawa , Eiji Yamada , Masahiro Araki , Yoshika Kaneko
发明人： Takeshi Kamikawa , Eiji Yamada , Masahiro Araki , Yoshika Kaneko
IPC分类号： H01S5/343 , H01S5/00 , H01S5/02 , H01S5/22 , H01S5/223
CPC分类号： B82Y20/00 , H01L33/007 , H01S5/0213 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 cm−2 or less, a stripe-shaped depressed portion (16) is formed by etching. On this substrate (10), a nitride semiconductor film (11) is grown, and a laser stripe (12) is formed off the area right above the depressed portion (16). With this structure, the laser stripe (12) is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.
摘要翻译：氮化物半导体激光器件使用具有低缺陷密度的衬底，在氮化物半导体膜内包含减少的应变，从而提供令人满意的长使用寿命。在缺陷密度低至10 -6 cm -2以下的GaN衬底（10）上，通过蚀刻形成条形凹部（16）。在该基板（10）上生长氮化物半导体膜（11），在凹部（16）正上方的区域形成激光条纹（12）。利用这种结构，激光条纹（12）没有应变，半导体激光器件使用寿命长。此外，氮化物半导体膜（11）产生减少的裂纹，导致大大提高的屈服率。

7. 发明授权

US08203152B2 Nitride semiconductor devices including a separation preventing layer 有权
标题翻译：氮化物半导体器件包括防分离层
公开(公告)号：US08203152B2
公开(公告)日：2012-06-19
申请号：US11259035
申请日：2005-10-27
申请人： Daisuke Hanaoka , Masafumi Kondo , Susumu Ohmi , Kunihiro Takatani , Yoshika Kaneko
发明人： Daisuke Hanaoka , Masafumi Kondo , Susumu Ohmi , Kunihiro Takatani , Yoshika Kaneko
IPC分类号： H01L33/00
CPC分类号： H01S5/22 , H01L21/28575 , H01L33/44 , H01S5/0425 , H01S5/2214 , H01S5/32341
摘要： The nitride semiconductor device includes an insulating layer and a metal layer formed on a nitride semiconductor layer. The insulating layer makes contact with the nitride semiconductor layer. A separation preventing layer is formed between the insulating layer and the metal layer so as to make contact with each of these layers. The separation preventing layer includes, as a main component, at least one oxide of a metal selected from a group of metals consisting of tungsten, molybdenum, chromium, titanium, nickel, hafnium, zinc, indium and yttrium.
摘要翻译：氮化物半导体器件包括在氮化物半导体层上形成的绝缘层和金属层。绝缘层与氮化物半导体层接触。在绝缘层和金属层之间形成分离防止层，以便与这些层中的每一层接触。作为主要成分的防分离层含有选自钨，钼，铬，钛，镍，铪，锌，铟，钇等金属的金属中的至少一种以上的金属。

8. 发明申请

US20110136276A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATION THEREOF 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20110136276A1
公开(公告)日：2011-06-09
申请号：US12979059
申请日：2010-12-27
申请人： Takeshi KAMIKAWA , Eiji Yamada , Masahiro Araki , Yoshika Kaneko
发明人： Takeshi KAMIKAWA , Eiji Yamada , Masahiro Araki , Yoshika Kaneko
IPC分类号： H01L21/306
CPC分类号： B82Y20/00 , H01L33/007 , H01S5/0213 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 cm−2 or less, a stripe-shaped depressed portion (16) is formed by etching. On this substrate (10), a nitride semiconductor film (11) is grown, and a laser stripe (12) is formed off the area right above the depressed portion (16). With this structure, the laser stripe (12) is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.
摘要翻译：氮化物半导体激光器件使用具有低缺陷密度的衬底，在氮化物半导体膜内包含减少的应变，从而提供令人满意的长使用寿命。在缺陷密度低至106cm -2以下的GaN衬底（10）上，通过蚀刻形成条形凹部（16）。在该基板（10）上生长氮化物半导体膜（11），在凹部（16）正上方的区域形成激光条纹（12）。利用这种结构，激光条纹（12）没有应变，半导体激光器件使用寿命长。此外，氮化物半导体膜（11）产生减少的裂纹，导致大大提高的屈服率。

9. 发明授权

US07903708B2 Nitride semiconductor light-emitting device and method for fabrication thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07903708B2
公开(公告)日：2011-03-08
申请号：US10902481
申请日：2004-07-30
申请人： Takeshi Kamikawa , Eiji Yamada , Masahiro Araki , Yoshika Kaneko
发明人： Takeshi Kamikawa , Eiji Yamada , Masahiro Araki , Yoshika Kaneko
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01L33/007 , H01S5/0213 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 cm−2 or less, a stripe-shaped depressed portion (16) is formed by etching. On this substrate (10), a nitride semiconductor film (11) is grown, and a laser stripe (12) is formed off the area right above the depressed portion (16). With this structure, the laser stripe (12) is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.
摘要翻译：氮化物半导体激光器件使用具有低缺陷密度的衬底，在氮化物半导体膜内包含减少的应变，从而提供令人满意的长使用寿命。在缺陷密度低至106cm -2以下的GaN衬底（10）上，通过蚀刻形成条形凹部（16）。在该基板（10）上生长氮化物半导体膜（11），在凹部（16）正上方的区域形成激光条纹（12）。利用这种结构，激光条纹（12）没有应变，半导体激光器件使用寿命长。此外，氮化物半导体膜（11）产生减少的裂纹，导致大大提高的屈服率。

10. 发明授权

US07529283B2 Nitride semiconductor laser device and method for fabrication thereof 有权
标题翻译：氮化物半导体激光器件及其制造方法
公开(公告)号：US07529283B2
公开(公告)日：2009-05-05
申请号：US11877551
申请日：2007-10-23
申请人： Takeshi Kamikawa , Yoshika Kaneko
发明人： Takeshi Kamikawa , Yoshika Kaneko
IPC分类号： H01S5/00 , H01L33/00
CPC分类号： H01S5/3202 , H01L33/20 , H01L33/32 , H01S5/0207 , H01S5/32341 , H01S2304/12
摘要： A nitride semiconductor light-emitting device includes a nitride semiconductor substrate of which at least part of a surface is formed from a nitride semiconductor and a nitride film semiconductor growth layer laid on the surface of the nitride semiconductor substrate. A carved region in the shape of a depressed portion may be formed on the surface of the nitride semiconductor substrate. The carved region may have an inverted tapered shape or a tapered shape in cross-section. Alternatively, or additionally, the nitride film semiconductor growth layer may include a gallium nitride film or an aluminum containing gallium nitride film where the nitride film semiconductor growth layer makes contact with the nitride semiconductor substrate. Alternatively, or additionally, the nitride film semiconductor growth layer may include a light-emitting portion formed at a location 20 μm or more away from the carved region.
摘要翻译：氮化物半导体发光器件包括氮化物半导体衬底，其氮化物半导体和氮化物半导体生长层的至少一部分表面由氮化物半导体形成，氮化物半导体生长层位于氮化物半导体衬底的表面上。可以在氮化物半导体衬底的表面上形成凹陷部形状的雕刻区域。雕刻区域的截面可以具有倒锥形或锥形形状。或者或另外，氮化物膜半导体生长层可以包括氮化镓膜或含氮化镓膜，其中氮化物膜半导体生长层与氮化物半导体衬底接触。或者或另外，氮化物膜半导体生长层可以包括形成在距离雕刻区域20m或更远的位置处的发光部分。

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