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1. 发明授权

US08233313B2 Conductive organic non-volatile memory device with nanocrystals embedded in an amorphous barrier layer 有权
标题翻译：具有纳米晶体的导电有机非易失性存储器件嵌入在非晶形阻挡层中
公开(公告)号：US08233313B2
公开(公告)日：2012-07-31
申请号：US13286861
申请日：2011-11-01
申请人： Jea-Gun Park , Sung-Ho Seo , Woo-Sik Nam , Young-Hwan Oh , Yool-Guk Kim , Hyun-Min Seung , Jong-Dae Lee
发明人： Jea-Gun Park , Sung-Ho Seo , Woo-Sik Nam , Young-Hwan Oh , Yool-Guk Kim , Hyun-Min Seung , Jong-Dae Lee
IPC分类号： G11C13/02 , H01L27/28
CPC分类号： H01L27/285 , B82Y10/00 , G11C11/5664 , G11C13/0014 , G11C13/0016 , G11C2211/5614 , G11C2213/51 , G11C2216/06 , H01L51/0042 , H01L51/0591 , Y10S977/943
摘要： A non-volatile memory device includes a plurality of unit cells. Each unit cell includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier. The unit cell receives a plurality of voltage ranges to perform a plurality of operations. A read operation is performed when an input voltage is in a first voltage range. A first write operation is performed when the input voltage is in a second voltage range higher than the first voltage range. A second write operation is performed when the input voltage is in a third voltage range higher than the second voltage range. An erase operation is performed when the input voltage is higher than the third voltage range.
摘要翻译：非易失性存储器件包括多个单元电池。每个单元电池包括在基板上的下电极和上电极，在下电极和上电极之间的导电有机材料层和位于导电有机材料层内的纳米晶体层，其中纳米晶体层包括被非晶形态包围的多个纳米晶体屏障。单元接收多个电压范围以执行多个操作。当输入电压处于第一电压范围时执行读操作。当输入电压处于高于第一电压范围的第二电压范围时，执行第一写入操作。当输入电压处于高于第二电压范围的第三电压范围时，执行第二写入操作。当输入电压高于第三电压范围时，执行擦除操作。

2. 发明授权

US08050081B2 Conductive organic nonvolatile memory device having nanocrystals surrounded by amorphous barrier 有权
标题翻译：具有被无定形屏障包围的纳米晶体的导电有机非易失性存储器件
公开(公告)号：US08050081B2
公开(公告)日：2011-11-01
申请号：US12108465
申请日：2008-04-23
申请人： Jea-Gun Park , Sung-Ho Seo , Woo-Sik Nam , Young-Hwan Oh , Yool-Guk Kim , Hyun-Min Seung , Jong-Dae Lee
发明人： Jea-Gun Park , Sung-Ho Seo , Woo-Sik Nam , Young-Hwan Oh , Yool-Guk Kim , Hyun-Min Seung , Jong-Dae Lee
IPC分类号： G11C13/02 , H01L27/28
CPC分类号： H01L27/285 , B82Y10/00 , G11C11/5664 , G11C13/0014 , G11C13/0016 , G11C2211/5614 , G11C2213/51 , G11C2216/06 , H01L51/0042 , H01L51/0591 , Y10S977/943
摘要： A non-volatile memory device includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier, wherein the device has a multi-level output current according to a voltage level of an input voltage coupled to the lower and the upper electrodes during a data read operation.
摘要翻译：非易失性存储器件包括衬底上的下电极和上电极，位于下电极和上电极之间的导电有机材料层和位于导电有机材料层内的纳米晶体层，其中纳米晶体层包括多个纳米晶体，通过非晶屏障，其中在数据读取操作期间，器件根据耦合到下电极和上电极的输入电压的电压电平具有多电平输出电流。

3. 发明授权

US07092396B2 Asynchronous transfer mode (ATM) based delay adaptive scheduling apparatus adaptive according to traffic types and method thereof 有权
公开(公告)号：US07092396B2
公开(公告)日：2006-08-15
申请号：US10032097
申请日：2001-12-31
申请人： Sang-ho Lee , Young-hwan Oh
发明人： Sang-ho Lee , Young-hwan Oh
IPC分类号： H04L12/56
CPC分类号： H04L12/5602 , H04L2012/5651 , H04L2012/5679
摘要： An ATM-based delay adaptive scheduling apparatus adaptive according to a traffic type and method thereof. A scheduling portion categorizes an input cell according to the traffic type, and generates service information of the cell suitably for the traffic type of the cells. A controlling portion determines a priority of cell service provision based on the service information, and an outputting portion reads a corresponding cell from the storing portion according to the service providing priority determined by the controlling portion, and outputs the read cell to an ATM switch. By generating the service information of each cell in the form of a tag, and by determining a priority of service provision according to the generated service information, an adequate QoS is guaranteed for each traffic type under a multi-traffic environment, and an efficient use of bandwidth provided in a current network is achieved by using the characteristics of each traffic type.

4. 发明申请

US20120044767A1 NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20120044767A1
公开(公告)日：2012-02-23
申请号：US13286861
申请日：2011-11-01
申请人： Jae-Gun PARK , Sung-Ho SEO , Woo-Sik NAM , Young-Hwan OH , Yool-Guk KIM , Hyun-Min SEUNG , Jong-Dae LEE
发明人： Jae-Gun PARK , Sung-Ho SEO , Woo-Sik NAM , Young-Hwan OH , Yool-Guk KIM , Hyun-Min SEUNG , Jong-Dae LEE
IPC分类号： G11C11/34 , B82Y99/00
CPC分类号： H01L27/285 , B82Y10/00 , G11C11/5664 , G11C13/0014 , G11C13/0016 , G11C2211/5614 , G11C2213/51 , G11C2216/06 , H01L51/0042 , H01L51/0591 , Y10S977/943
摘要： A non-volatile memory device includes a plurality of unit cells. Each unit cell includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier. A read operation is performed when an input voltage is in a first voltage range. A first write operation is performed when the input voltage is in a second voltage range higher than the first voltage range. A second write operation is performed when the input voltage is in a third voltage range higher than the second voltage range. An erase operation is performed when the input voltage is higher than the third voltage range.
摘要翻译：非易失性存储器件包括多个单元电池。每个单元电池包括在基板上的下电极和上电极，在下电极和上电极之间的导电有机材料层和位于导电有机材料层内的纳米晶体层，其中纳米晶体层包括被非晶形态包围的多个纳米晶体屏障。当输入电压处于第一电压范围时执行读操作。当输入电压处于高于第一电压范围的第二电压范围时，执行第一写入操作。当输入电压处于高于第二电压范围的第三电压范围时，执行第二写入操作。当输入电压高于第三电压范围时，执行擦除操作。

5. 发明授权

US07768128B2 Semiconductor memory devices including a damascene wiring line 有权
标题翻译：包括镶嵌线的半导体存储器件
公开(公告)号：US07768128B2
公开(公告)日：2010-08-03
申请号：US11499059
申请日：2006-08-04
申请人： Young-woo Cho , Kyung-tae Lee , Heon-jong Shin , Young-hwan Oh
发明人： Young-woo Cho , Kyung-tae Lee , Heon-jong Shin , Young-hwan Oh
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L27/1104 , H01L21/76808 , H01L27/0207 , H01L27/11
摘要： Integrated circuit memory devices include an integrated circuit substrate and a plurality of lower wiring lines on the substrate and extending in a first direction. An interlayer insulating layer is on the plurality of lower wiring lines. An upper damascene wiring line is in an upper portion of the interlayer insulating layer and extending in a second direction, different from the first direction, to extend over the plurality of lower wiring lines. The upper damascene wiring line has protruded regions extending therefrom in a direction different from the second direction, the protruded regions extending over respective underlying ones of the lower wiring lines. A first via extends through the interlayer insulating layer under a first of the protruded regions and connects the upper damascene wiring line to a corresponding underlying first one of the plurality of wiring lines. A second via extends through the interlayer insulating layer under a second of the protruded regions and connects the upper damascene wiring line to a corresponding underlying second one of the plurality of wiring lines.
摘要翻译：集成电路存储器件包括集成电路基板和在基板上的多个下布线，并沿第一方向延伸。层间绝缘层位于多个下布线上。上部镶嵌线路位于层间绝缘层的上部，并且沿与第一方向不同的第二方向延伸，在多条下部布线上延伸。上部镶嵌线具有沿与第二方向不同的方向从其延伸的突出区域，突出区域延伸到下部布线的下方。第一通孔延伸穿过位于第一突出区域的层间绝缘层，并将上镶嵌布线连接到多个布线中相应的下面的第一布线。第二通孔延伸穿过第二突出区域之间的层间绝缘层，并将上部镶嵌布线连接到多条布线中相应的下面的第二布线。

6. 发明授权

US07440977B2 Recovery method using extendible hashing-based cluster logs in shared-nothing spatial database cluster 有权
标题翻译：在无共享空间数据库集群中使用可扩展散列集群日志的恢复方法
公开(公告)号：US07440977B2
公开(公告)日：2008-10-21
申请号：US11157885
申请日：2005-06-20
申请人： Hae-Young Bae , Jae-Dong Lee , Young-Hwan Oh , Gyoung-Bae Kim , Myoung-Keun Kim , Soon-Young Park , Ho-Seok Kim , Yong-Il Jang
发明人： Hae-Young Bae , Jae-Dong Lee , Young-Hwan Oh , Gyoung-Bae Kim , Myoung-Keun Kim , Soon-Young Park , Ho-Seok Kim , Yong-Il Jang
IPC分类号： G06F17/30
CPC分类号： G06F11/1658 , G06F11/2048 , Y10S707/99931 , Y10S707/99953
摘要： The present invention provides a recovery method using extendible hashing-based cluster logs in a shared-nothing spatial database cluster, which eliminates the duplication of cluster logs required for cluster recovery in a shared-nothing database cluster, so that recovery time is decreased, thus allowing the shared-nothing spatial database cluster system to continuously provide stable service. In the recovery method, if a failure occurs in a predetermined node, a second node in a group, including the node, records cluster logs in main memory on the basis of extendible hashing. If the node that has failed recovers itself using a local log, the second node in the group transmits cluster logs in packets to a recovery node that is the failed node. If the recovery node reflects the received cluster logs and maintains consistency with other nodes in the group, the recovery node resumes normal service.
摘要翻译：本发明提供了一种在无共享空间数据库集群中使用可扩展散列集群日志的恢复方法，其消除了在无共享数据库集群中集群恢复所需的集群日志的重复，从而减少了恢复时间使无共享的空间数据库集群系统不断提供稳定的服务。在恢复方法中，如果在预定节点中发生故障，则包括该节点在内的组中的第二节点基于可扩展哈希在主存储器中记录集群日志。如果失败的节点使用本地日志恢复自身，则该组中的第二个节点将分组中的群集日志传输到作为故障节点的恢复节点。如果恢复节点反映接收的群集日志并维护与组中其他节点的一致性，则恢复节点恢复正常服务。

7. 发明申请

US20070233720A1 LAZY BULK INSERTION METHOD FOR MOVING OBJECT INDEXING 审中-公开
标题翻译：用于移动目标索引的LAZY BULK插入方法
公开(公告)号：US20070233720A1
公开(公告)日：2007-10-04
申请号：US11611284
申请日：2006-12-15
申请人： Hae Young BAE , Young Hwan OH , Ho Seok KIM , Yong Il JANG , Byeong Seob YOU , Sang Hun EO , Dong Wook LEE , John Hyeon CHEON
发明人： Hae Young BAE , Young Hwan OH , Ho Seok KIM , Yong Il JANG , Byeong Seob YOU , Sang Hun EO , Dong Wook LEE , John Hyeon CHEON
IPC分类号： G06F7/00
CPC分类号： G06F16/2264 , G06F16/2246 , G06F16/29
摘要： The present invention relates to a lazy bulk insertion method for moving object indexing, which utilizes a hash-based data structure to overcome the disadvantages of an R-tree, and uses two buffers to simultaneously store operations in the buffers and process queries stored in the buffers, so that the overall update cost can be reduced. In the lazy bulk insertion method, a buffer is substituted and a state of the buffer is changed to a deactivated state if an input query cannot be stored in the buffer. Operations stored in the deactivated buffer are sequentially analyzed, information about objects corresponding to respective operations is obtained from a direct link to analyze the operations, and thus the operations are aligned on the basis of object IDs. Operations, aligned in ascending order of spatial objects, are identified depending on respective objects, effectiveness of the operations is determined, and thus the operations are realigned on the basis of terminal node IDs. The number of insert operations and the number of delete operations are counted for each terminal node, and variation in the number of empty spaces in the terminal node is obtained, thus splitting and merging of the terminal nodes is predicted. A processing sequence of queries is reorganized so as to reduce variation in the node on the basis of the predicted information.
摘要翻译：本发明涉及一种用于移动对象索引的延迟批量插入方法，其利用基于散列的数据结构来克服R树的缺点，并且使用两个缓冲器来同时存储缓冲器中的操作和存储在缓冲区，从而可以降低总体更新成本。在惰性批量插入方法中，如果输入查询不能存储在缓冲区中，则替换缓冲区，并将缓冲区的状态更改为禁用状态。顺序地分析存储在去激活缓冲器中的操作，从直接链接获得关于对应于各个操作的对象的信息，以分析操作，因此基于对象ID来对齐操作。根据各个对象来识别按空间对象的升序排列的操作，确定操作的有效性，并且因此基于终端节点ID对操作进行重新排列。对每个终端节点计数插入操作次数和删除次数，得到终端节点空闲空间数量的变化，从而预测终端节点的分裂和合并。重新组织查询的处理顺序，以便基于预测信息来减少节点的变化。

8. 发明申请

US20090040805A1 NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20090040805A1
公开(公告)日：2009-02-12
申请号：US12108465
申请日：2008-04-23
申请人： Jea-Gun Park , Sung-Ho Seo , Woo-Sik Nam , Young-Hwan Oh , Yool-Guk Kim , Hyun-Min Seung , Jong-Dae Lee
发明人： Jea-Gun Park , Sung-Ho Seo , Woo-Sik Nam , Young-Hwan Oh , Yool-Guk Kim , Hyun-Min Seung , Jong-Dae Lee
IPC分类号： G11C13/04 , H01L51/40
CPC分类号： H01L27/285 , B82Y10/00 , G11C11/5664 , G11C13/0014 , G11C13/0016 , G11C2211/5614 , G11C2213/51 , G11C2216/06 , H01L51/0042 , H01L51/0591 , Y10S977/943
摘要： A non-volatile memory device includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier, wherein the device has a multi-level output current according to a voltage level of an input voltage coupled to the lower and the upper electrodes during a data read operation.
摘要翻译：非易失性存储器件包括衬底上的下电极和上电极，位于下电极和上电极之间的导电有机材料层和位于导电有机材料层内的纳米晶体层，其中纳米晶体层包括多个纳米晶体，通过非晶屏障，其中在数据读取操作期间，器件根据耦合到下电极和上电极的输入电压的电压电平具有多电平输出电流。

9. 发明申请

US20070035028A1 Semiconductor memory devices and methods of fabricating the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20070035028A1
公开(公告)日：2007-02-15
申请号：US11499059
申请日：2006-08-04
申请人： Young-woo Cho , Kyung-tae Lee , Heon-jong Shin , Young-hwan Oh
发明人： Young-woo Cho , Kyung-tae Lee , Heon-jong Shin , Young-hwan Oh
IPC分类号： H01L23/52
CPC分类号： H01L27/1104 , H01L21/76808 , H01L27/0207 , H01L27/11
摘要： Integrated circuit memory devices include an integrated circuit substrate and a plurality of lower wiring lines on the substrate and extending in a first direction. An interlayer insulating layer is on the plurality of lower wiring lines. An upper damascene wiring line is in an upper portion of the interlayer insulating layer and extending in a second direction, different from the first direction, to extend over the plurality of lower wiring lines. The upper damascene wiring line has protruded regions extending therefrom in a direction different from the second direction, the protruded regions extending over respective underlying ones of the lower wiring lines. A first via extends through the interlayer insulating layer under a first of the protruded regions and connects the upper damascene wiring line to a corresponding underlying first one of the plurality of wiring lines. A second via extends through the interlayer insulating layer under a second of the protruded regions and connects the upper damascene wiring line to a corresponding underlying second one of the plurality of wiring lines.
摘要翻译：集成电路存储器件包括集成电路基板和在基板上的多个下布线，并沿第一方向延伸。层间绝缘层位于多个下布线上。上部镶嵌线路位于层间绝缘层的上部，并且沿与第一方向不同的第二方向延伸，在多条下部布线上延伸。上部镶嵌线具有沿与第二方向不同的方向从其延伸的突出区域，突出区域延伸到下部布线的下方。第一通孔延伸穿过位于第一突出区域的层间绝缘层，并将上镶嵌布线连接到多个布线中相应的下面的第一布线。第二通孔在第二突出区域的下方延伸穿过层间绝缘层，并将上部镶嵌线路连接到多条布线中相应的下面的第二布线。

10. 发明申请

US20060259525A1 Recovery method using extendible hashing-based cluster logs in shared-nothing spatial database cluster 有权
标题翻译：在无共享空间数据库集群中使用可扩展散列集群日志的恢复方法
公开(公告)号：US20060259525A1
公开(公告)日：2006-11-16
申请号：US11157885
申请日：2005-06-20
申请人： Hae-Young Bae , Jae-Dong Lee , Young-Hwan Oh , Gyoung-Bae Kim , Myoung-Keun Kim , Soon-Young Park , Ho-Seok Kim , Yong-Il Jang
发明人： Hae-Young Bae , Jae-Dong Lee , Young-Hwan Oh , Gyoung-Bae Kim , Myoung-Keun Kim , Soon-Young Park , Ho-Seok Kim , Yong-Il Jang
IPC分类号： G06F17/30
CPC分类号： G06F11/1658 , G06F11/2048 , Y10S707/99931 , Y10S707/99953
摘要： The present invention provides a recovery method using extendible hashing-based cluster logs in a shared-nothing spatial database cluster, which eliminates the duplication of cluster logs required for cluster recovery in a shared-nothing database cluster, so that recovery time is decreased, thus allowing the shared-nothing spatial database cluster system to continuously provide stable service. In the recovery method, if a failure occurs in a predetermined node, a second node in a group, including the node, records cluster logs in main memory on the basis of extendible hashing. If the node that has failed recovers itself using a local log, the second node in the group transmits cluster logs in packets to a recovery node that is the failed node. If the recovery node reflects the received cluster logs and maintains consistency with other nodes in the group, the recovery node resumes normal service.
摘要翻译：本发明提供了一种在无共享空间数据库集群中使用可扩展散列集群日志的恢复方法，其消除了在无共享数据库集群中集群恢复所需的集群日志的重复，从而减少了恢复时间使无共享的空间数据库集群系统不断提供稳定的服务。在恢复方法中，如果在预定节点中发生故障，则包括该节点在内的组中的第二节点基于可扩展哈希在主存储器中记录集群日志。如果失败的节点使用本地日志恢复自身，则该组中的第二个节点将分组中的群集日志传输到作为故障节点的恢复节点。如果恢复节点反映接收的群集日志并维护与组中其他节点的一致性，则恢复节点恢复正常服务。

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