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1. 发明申请

US20060102373A1 Member for semiconductor device 审中-公开
标题翻译：半导体器件成员
公开(公告)号：US20060102373A1
公开(公告)日：2006-05-18
申请号：US10520923
申请日：2003-07-07
申请人： Kazuya Kamitake , Yugaku Abe , Kenjiro Higaki
发明人： Kazuya Kamitake , Yugaku Abe , Kenjiro Higaki
IPC分类号： H01L23/02
CPC分类号： H01L23/06 , H01L23/04 , H01L23/3732 , H01L2224/16 , H01L2224/16225 , H01L2224/73253 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/16152
摘要： There is provided a member for a semiconductor device, such as a substrate, having an excellent resin bonding property capable of improving resin bonding strength at the time the member for a semiconductor device being bonded with resin and maintaining a high resin bonding strength even after various reliability tests, such as a thermal cycling test, are performed. The member for a semiconductor device comprises a base member 1 made of an alloy or composite mainly composed of Cu and W and/or Mo, an alloy or composite mainly composed of Al—SiC, or an alloy or composite mainly composed of Si—SiC. A coating layer made of a hard carbon film 2 is provided on at least a surface of the base member 1 on which at least another member for the semiconductor device, such as a package, is bonded with a resin. It is preferable that the base member 1 have a surface roughness of 0.1 to 20 μm in Rmax. It is preferable that the hard carbon film 2 have a thickness of 0.1 to 10 μm.
摘要翻译：提供了一种半导体器件（例如基板）的构件，其具有优异的树脂粘合特性，能够提高半导体器件与树脂粘合的部件时的树脂粘合强度，并且即使在各种之后也保持高的树脂粘合强度进行可靠性测试，例如热循环测试。半导体器件的构件包括由主要由Cu和W和/或Mo组成的合金或复合材料，主要由Al-SiC组成的合金或复合材料或主要由Si-SiC组成的合金或复合材料制成的基底构件1 。在基材1的至少一个表面上设置由硬质碳膜2构成的涂层，其中至少另外用于半导体器件的诸如封装的部件用树脂粘合。优选的是，在Rmax中，基材1的表面粗糙度为0.1〜20μm。硬碳膜2的厚度优选为0.1〜10μm。

2. 发明申请

US20050025654A1 Substrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same 审中-公开
标题翻译：用于安装半导体器件的基板材料，用于安装半导体器件的基板，半导体器件及其制造方法
公开(公告)号：US20050025654A1
公开(公告)日：2005-02-03
申请号：US10923782
申请日：2004-08-24
申请人： Shinichi Yamagata , Yugaku Abe , Makoto Imamura , Akira Fukui , Yoshishige Takano , Takatoshi Takikawa , Yoshiyuki Hirose
发明人： Shinichi Yamagata , Yugaku Abe , Makoto Imamura , Akira Fukui , Yoshishige Takano , Takatoshi Takikawa , Yoshiyuki Hirose
IPC分类号： B22F3/24 , C22C1/05 , C22C1/10 , C22C21/00 , C22C32/00 , C25D17/16 , H01L21/48 , H01L23/14 , H01L23/15 , B22F3/12
CPC分类号： C22C32/0063 , H01L21/4807 , H01L23/15 , H01L24/48 , H01L2224/16 , H01L2224/16225 , H01L2224/32188 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/01012 , H01L2924/01019 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/1517 , H01L2924/15311 , H01L2924/15312 , H01L2924/1532 , H01L2924/16152 , H01L2924/16195 , H01L2924/181 , Y10T428/24975 , Y10T428/25 , Y10T428/252 , Y10T428/26 , Y10T428/31678 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099 , H01L2224/05599 , H01L2224/85399
摘要： To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10−6/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.
摘要翻译：提供由导热率为100W / m×K以上且热膨胀系数为20×10 -6 /℃以下的铝/碳化硅复合合金制成的基材，重量轻且组成均匀。由铝/碳化硅复合材料制成的基体材料，其包含Al-SiC合金组合物部件和非合金组成部分，并且其中分散有10至70重量％的碳化硅颗粒，并且其中碳化硅浓度的波动其中的Al-SiC合金组成部分在1重量％以内。基板材料通过在非氧化性气氛中在不低于600℃的温度下烧结铝/碳化硅起始粉末的压块来制造。

3. 发明授权

US06974558B2 Susbstrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same 有权
标题翻译：用于安装半导体器件的衬底材料，用于安装半导体器件的衬底，半导体器件及其制造方法
公开(公告)号：US06974558B2
公开(公告)日：2005-12-13
申请号：US09925427
申请日：2001-08-10
申请人： Shinichi Yamagata , Yugaku Abe , Makoto Imamura , Akira Fukui , Yoshishige Takano , Takatoshi Takikawa , Yoshiyuki Hirose
发明人： Shinichi Yamagata , Yugaku Abe , Makoto Imamura , Akira Fukui , Yoshishige Takano , Takatoshi Takikawa , Yoshiyuki Hirose
IPC分类号： B22F3/24 , C22C1/05 , C22C1/10 , C22C21/00 , C22C32/00 , C25D17/16 , H01L21/48 , H01L23/14 , H01L23/15 , B22F3/12 , B22F7/00
CPC分类号： C22C32/0063 , H01L21/4807 , H01L23/15 , H01L24/48 , H01L2224/16 , H01L2224/16225 , H01L2224/32188 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/01012 , H01L2924/01019 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/1517 , H01L2924/15311 , H01L2924/15312 , H01L2924/1532 , H01L2924/16152 , H01L2924/16195 , H01L2924/181 , Y10T428/24975 , Y10T428/25 , Y10T428/252 , Y10T428/26 , Y10T428/31678 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099 , H01L2224/05599 , H01L2224/85399
摘要： To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10−6/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.
摘要翻译：为了提供由导热率为100W / m×K以上且热膨胀系数为20×10 -6〜/℃以下的铝/碳化硅复合合金制成的基板材料，为重量轻，组成均匀。由铝/碳化硅复合材料制成的基体材料，其包含Al-SiC合金组合物部件和非合金组成部分，并且其中分散有10至70重量％的碳化硅颗粒，并且其中碳化硅浓度的波动其中的Al-SiC合金组成部分在1重量％以内。基板材料通过在非氧化性气氛中在不低于600℃的温度下烧结铝/碳化硅起始粉末的压块来制造。

4. 发明授权

US06388273B1 Substrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same 有权
标题翻译：用于安装半导体器件的基板材料，用于安装半导体器件的基板，半导体器件及其制造方法
公开(公告)号：US06388273B1
公开(公告)日：2002-05-14
申请号：US09692162
申请日：2000-10-20
申请人： Shinichi Yamagata , Yugaku Abe , Makoto Imamura , Akira Fukui , Yoshishige Takano , Takatoshi Takikawa , Yoshiyuki Hirose
发明人： Shinichi Yamagata , Yugaku Abe , Makoto Imamura , Akira Fukui , Yoshishige Takano , Takatoshi Takikawa , Yoshiyuki Hirose
IPC分类号： H01L2315
CPC分类号： C22C32/0063 , H01L21/4807 , H01L23/15 , H01L24/48 , H01L2224/16 , H01L2224/16225 , H01L2224/32188 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/01012 , H01L2924/01019 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/1517 , H01L2924/15311 , H01L2924/15312 , H01L2924/1532 , H01L2924/16152 , H01L2924/16195 , H01L2924/181 , Y10T428/24975 , Y10T428/25 , Y10T428/252 , Y10T428/26 , Y10T428/31678 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099 , H01L2224/05599 , H01L2224/85399
摘要： To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10−6/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.
摘要翻译：提供由导热率为100W / m×K以上且热膨胀系数为20×10 -6 /℃以下的铝/碳化硅复合合金制成的基材，重量轻且组成均匀。由铝/碳化硅复合材料制成的基体材料，其包含Al-SiC合金组合物部件和非合金组成部分，并且其中分散有10至70重量％的碳化硅颗粒，并且其中碳化硅浓度的波动其中的Al-SiC合金组成部分在1重量％以内。基板材料通过在非氧化性气氛中在不低于600℃的温度下烧结铝/碳化硅起始粉末的压块来制造。

5. 发明授权

US09199433B2 Metal laminated structure and method for producing the metal laminated structure 有权
标题翻译：金属叠层结构及其制造方法
公开(公告)号：US09199433B2
公开(公告)日：2015-12-01
申请号：US13381703
申请日：2010-06-08
申请人： Koji Nitta , Masatoshi Majima , Shinji Inazawa , Yugaku Abe , Hiroshi Yokoyama , Osamu Suwata , Shinichi Yamagata
发明人： Koji Nitta , Masatoshi Majima , Shinji Inazawa , Yugaku Abe , Hiroshi Yokoyama , Osamu Suwata , Shinichi Yamagata
IPC分类号： H01L23/373 , B32B15/01 , C23C28/02 , C25D3/66 , C25D5/10 , C25D7/06 , C25D7/12 , H01L33/64
CPC分类号： B32B15/01 , C23C28/021 , C25D3/66 , C25D5/10 , C25D7/06 , C25D7/12 , H01L23/3735 , H01L23/3736 , H01L33/641 , H01L2924/0002 , Y10T428/12826 , H01L2924/00
摘要： There is provided a metal laminated structure comprising a first metal layer, a second metal layer and a third metal layer, the first metal layer being disposed on one surface of the second metal layer, the third metal layer being disposed on the other surface of the second metal layer, the first metal layer including at least one of tungsten and molybdenum, the second metal layer including copper, the third metal layer including at least one of tungsten and molybdenum, and a method for producing the metal laminated structure.
摘要翻译：提供了包括第一金属层，第二金属层和第三金属层的金属层压结构，第一金属层设置在第二金属层的一个表面上，第三金属层设置在第二金属层的另一个表面上第二金属层，第一金属层包括钨和钼中的至少一种，第二金属层包括铜，第三金属层包括钨和钼中的至少一种，以及金属层压结构的制造方法。

6. 发明授权

US08993121B2 Metal laminated structure and method for producing the same 有权
标题翻译：金属层压结构及其制造方法
公开(公告)号：US08993121B2
公开(公告)日：2015-03-31
申请号：US13580082
申请日：2010-12-27
申请人： Koji Nitta , Shinji Inazawa , Akihisa Hosoe , Masatoshi Majima , Osamu Suwata , Hiroshi Yokoyama , Shinichi Yamagata , Yugaku Abe
发明人： Koji Nitta , Shinji Inazawa , Akihisa Hosoe , Masatoshi Majima , Osamu Suwata , Hiroshi Yokoyama , Shinichi Yamagata , Yugaku Abe
IPC分类号： B32B15/01 , C25D3/66 , H01L23/373 , C22C9/00 , C22C27/00 , C25D5/10 , C25D5/12 , H01L33/64 , C25D3/12 , C25D3/38
CPC分类号： H01L23/3735 , B32B15/01 , C22C9/00 , C22C27/00 , C22C27/04 , C25D3/12 , C25D3/38 , C25D3/66 , C25D5/10 , C25D5/12 , H01L33/641 , H01L2924/0002 , Y10T428/12632 , Y10T428/12833 , Y10T428/1284 , Y10T428/1291 , H01L2924/00
摘要： There is provided a metal laminated structure in which a first metal layer containing tungsten is provided on a first surface of a second metal layer containing copper and a third metal layer containing tungsten is provided on a second surface of the second metal layer opposite to the first surface, and the first metal layer contains crystal grains of tungsten in a form of a columnar crystal extending in a direction perpendicular to the first surface of the second metal layer and the third metal layer contains crystal grains of tungsten in a form of a columnar crystal extending in a direction perpendicular to the second surface of the second metal layer, and a method for producing the metal laminated structure.
摘要翻译：提供了一种金属层压结构，其中在包含铜的第二金属层的第一表面上提供含有钨的第一金属层，并且在与第一金属层相反的第二金属层的第二表面上设置含有钨的第三金属层并且第一金属层含有呈垂直于第二金属层的第一表面的方向延伸的柱状晶体的钨晶体，第三金属层含有柱状晶体形式的钨晶体在与第二金属层的第二表面垂直的方向上延伸的金属层压结构体的制造方法。

7. 发明授权

US5132779A Housing for semiconductor device with occlusion gas removed 失效
标题翻译：具有消除气体的半导体器件的外壳
公开(公告)号：US5132779A
公开(公告)日：1992-07-21
申请号：US641499
申请日：1991-01-15
申请人： Mitsuo Osada , Yugaku Abe , Tetsuya Hayashi
发明人： Mitsuo Osada , Yugaku Abe , Tetsuya Hayashi
IPC分类号： H01L23/08 , H01L21/48 , H01L23/06
CPC分类号： H01L21/4817 , H01L23/06 , H01L2924/0002 , H01L2924/01079
摘要： A housing for a semiconductor device is improved to avoid thermal distortion. The housing is formed of an Al-Si compound material and includes a housing member having a space for holding the semiconductor device. Occlusion gas contained in the Al-Si compound material is removed so that at least any nitrogen gas remaining in occlusion after degassing is 0.1 percent by weight or less. Since the housing member substantially does not contain occlusion gas, the housing is not subject to thermal distortion even though the housing is exposed to heat in operation.

8. 发明申请

US20050230819A1 Semiconductor Heat-Dissipating Substrate, and Manufacturing Method and Package Therefor 有权
标题翻译：半导体散热基板及其制造方法和封装
公开(公告)号：US20050230819A1
公开(公告)日：2005-10-20
申请号：US11160691
申请日：2005-07-06
申请人： Kouichi Takashima , Shin-ichi Yamagata , Yugaku Abe , Akira Sasame
发明人： Kouichi Takashima , Shin-ichi Yamagata , Yugaku Abe , Akira Sasame
IPC分类号： H01L23/34 , H01L21/52 , H01L23/36 , H01L23/373 , H01L23/40
CPC分类号： B22F3/26 , B22F7/08 , B22F2998/10 , B22F2999/00 , H01L23/3733 , H01L24/27 , H01L2224/83101 , H01L2924/12041 , H01L2924/12042 , Y10T428/12042 , Y10T428/12479 , B22F1/0059 , B22F3/02 , B22F3/1121 , B22F2207/11 , B22F2207/01 , H01L2924/00
摘要： In a semiconductor heat-dissipating substrate made of a Cu—W alloy whose pores have been infiltrated with copper, being a porous tungsten body whose pore diameter at a specific cumulative surface area of 95% is 0.3 μm or more, and whose pore diameter at a specific cumulative surface area of 5% is 30 μm or less, thermal conductivity of 210 W/m·K or more is obtained by decreasing the content of iron-family metal to be less than 0.02 weight %. Likewise, changing the amount of infiltrated copper in a molded object by utilizing a multi-shaft press to vary the amount of vesicles in the middle and peripheral portions makes for offering at low cost a semiconductor heat-dissipating substrate that in between middle and peripheral portions made of different materials does not have bonding matter.
摘要翻译：在由铜孔渗透的Cu-W合金制成的半导体散热基板中，作为特定累积表面积为95μm以上的孔径为0.3μm以上的多孔钨体，其孔径为 5％的特定累积表面积为30μm以下，通过将铁族金属的含量降低至0.02重量％以下，得到210W / mK以上的导热率。同样地，通过利用多轴压机来改变成型物体中渗透的铜的量来改变中间部分和周边部分中的囊泡的量使得以低成本提供半导体散热基板，其在中间部分和周边部分之间由不同的材料制成，没有粘结物质。

9. 发明授权

US06534190B1 Substrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same 有权
公开(公告)号：US06534190B1
公开(公告)日：2003-03-18
申请号：US10138422
申请日：2002-05-06
申请人： Shinichi Yamagata , Yugaku Abe , Makoto Imamura , Akira Fukui , Yoshishige Takano , Takatoshi Takikawa , Yoshiyuki Hirose
发明人： Shinichi Yamagata , Yugaku Abe , Makoto Imamura , Akira Fukui , Yoshishige Takano , Takatoshi Takikawa , Yoshiyuki Hirose
IPC分类号： B32B906
CPC分类号： C22C32/0063 , H01L21/4807 , H01L23/15 , H01L24/48 , H01L2224/16 , H01L2224/16225 , H01L2224/32188 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/01012 , H01L2924/01019 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/1517 , H01L2924/15311 , H01L2924/15312 , H01L2924/1532 , H01L2924/16152 , H01L2924/16195 , H01L2924/181 , Y10T428/24975 , Y10T428/25 , Y10T428/252 , Y10T428/26 , Y10T428/31678 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099 , H01L2224/05599 , H01L2224/85399
摘要： To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10−6/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.

10. 发明授权

US5605558A Nitrogenous aluminum-silicon powder metallurgical alloy 失效
标题翻译：含氮铝粉冶金合金
公开(公告)号：US5605558A
公开(公告)日：1997-02-25
申请号：US334604
申请日：1994-11-04
申请人： Shin-ichi Yamagata , Yoshishige Takano , Tetsuya Hayashi , Yugaku Abe
发明人： Shin-ichi Yamagata , Yoshishige Takano , Tetsuya Hayashi , Yugaku Abe
IPC分类号： C22C32/00 , H01L23/373 , C22C29/16
CPC分类号： C22C32/0068 , H01L23/3733 , H01L2224/48091 , H01L2224/73265 , Y10T428/12028 , Y10T428/12056
摘要： A nitrogenous Al--Si powder metallurgical alloy contains at least 4 wt % and at most 15 wt % of nitrogen, with the remaining part consisting essentially of Al, Si and an unavoidable component. Consequently, a highly safe material which is lightweight and has a density of at most 3.0 g/cm.sup.3, a thermal expansion coefficient in the range of 5 to 10.times.10.sup.-6 /.degree.C., and a thermal conductivity coefficient of at least 0.2 cal/cm.multidot.sec.multidot..degree.C. has been obtained.
摘要翻译：含氮Al-Si粉末冶金合金含有至少4wt％和至多15wt％的氮，其余部分基本上由Al，Si和不可避免的组分组成。因此，重量轻，密度最高为3.0g / cm 3，热膨胀系数为5〜10×10 -6 /℃，导热系数为0.2cal / cmxsecx℃。

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